ASTM F390-1998(2003) Standard Test Method for Sheet Resistance of Thin Metallic Films With a Collinear Four-Probe Array《用共线四探针法对金属薄膜的薄膜耐力的试验方法》.pdf
《ASTM F390-1998(2003) Standard Test Method for Sheet Resistance of Thin Metallic Films With a Collinear Four-Probe Array《用共线四探针法对金属薄膜的薄膜耐力的试验方法》.pdf》由会员分享,可在线阅读,更多相关《ASTM F390-1998(2003) Standard Test Method for Sheet Resistance of Thin Metallic Films With a Collinear Four-Probe Array《用共线四探针法对金属薄膜的薄膜耐力的试验方法》.pdf(4页珍藏版)》请在麦多课文档分享上搜索。
1、Designation: F 390 98 (Reapproved 2003)Standard Test Method forSheet Resistance of Thin Metallic Films With a CollinearFour-Probe Array1This standard is issued under the fixed designation F 390; the number immediately following the designation indicates the year oforiginal adoption or, in the case o
2、f revision, the year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon (e) indicates an editorial change since the last revision or reapproval.1. Scope1.1 This test method covers the measurement of the sheetresistance of metallic thin films with a
3、collinear four-probearray. It is intended for use with rectangular metallic filmsbetween 0.01 and 100 m thick, formed by deposition of amaterial or by a thinning process and supported by aninsulating substrate, in the sheet resistance range from 102to104V/h (see 3.1.3).1.2 This test method is suitab
4、le for referee measurementpurposes as well as for routine acceptance measurements.1.3 The values stated in Si units are to be regarded as thestandard. The values given in parentheses are for informationonly.1.4 This standard does not purport to address the safetyconcerns, if any, associated with its
5、 use. It is the responsibilityof whoever uses this standard to consult and establish appro-priate safety and health practices and determine the applica-bility of regulatory limitations prior to use.2. Referenced Documents2.1 ASTM Standards:2E 1 Specification for ASTM ThermometersF 388 Method for Mea
6、surement of Oxide Thickness onSilicon Wafers and Metallization Thickness by Multiple-Beam Interference (Tolansky Method)33. Terminology3.1 Definitions:3.1.1 thin filma film having a thickness much smaller thanany lateral dimension, formed by deposition of a material or bya thinning process.3.1.2 thi
7、n metallic filma thin film composed of a materialor materials with resistivity in the range from 108to103Vcm.3.1.3 sheet resistance, Rsin a thin film, the ratio of thepotential gradient parallel to the current to the product of thecurrent density and the film thickness; in a rectangular thinfilm, th
8、e quotient of the resistance, measured along the lengthof the film, divided by the length, l, to width, w, ratio. The ratiol/w is the number of squares.4. Summary of Test Method4.1 A collinear four-probe array is used to determine thesheet resistance by passing a measured direct current throughthe s
9、pecimen between the outer probes and measuring theresulting potential difference between the inner probes. Thesheet resistance is calculated from the measured current andpotential values using correction factors associated with thegeometry of the specimen and the probe spacing.4.2 This test method i
10、ncludes procedures for checking boththe probe assembly and the electrical measuring apparatus.4.2.1 The spacings between the four probe tips are deter-mined from measurements of indentations made by the tips ina suitable surface. This test also is used to determine thecondition of the tips.4.2.2 The
11、 accuracy of the electrical measuring equipment istested by means of an analog circuit containing a knownstandard resistor together with other resistors which simulatethe resistance at the contacts between the probe tips and thefilm surface.5. Apparatus5.1 Probe Assembly:5.1.1 ProbesThe probe shaft
12、and tip shall be constructedof tungsten carbide, Monel, hardened tool steel, or hard copperand have a conical tip with included angle of 45 to 90.Alternatively, the tip may be formed from a platinum-palladium alloy and resistance welded to the shaft. The tip shallhave a nominal initial radius of 25
13、to 50 m. In all cases all ofthe four paths from the electrical measurement equipmentinputs to the film surface must be identical.1This test method is under the jurisdiction of ASTM Committee F01 onElectronics and is the direct responsibility of Subcommittee F01.17 on SputteredThin Films.Current edit
14、ion approved May 10, 1998. Published October 1998. Originallypublished as F 390 73 T. Last previous edition F 390 97.2For referenced ASTM standards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to
15、 the standards Document Summary page onthe ASTM website.3Discontinued; see 1992 Annual Book of ASTM Standards, Vol 10.05.1Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.5.1.2 Probe ForceThe probes shall be uniformly loadedto exert a
16、force sufficient to deform the metal film butinsufficient to puncture the film. A rough guide for loading is aload of 20 g/Mohs (unit of hardness) of the film material oneach probe.5.1.3 Probe CharacteristicsThe probes shall be mountedin an insulating fixture such as a sapphire bearing in a methylme
17、thacrylate or hardened polystyrene block in an equallyspaced linear array. The electrical insulation between adjacentprobe points shall be at least 105times greater than the V/I ratioof the film. The spacing shall be 0.64 to 1.00 mm inclusive(0.025 to 0.040 in. inclusive) as agreed upon between thep
18、arties concerned with the test. The precision and reproduc-ibility of the probe spacing shall be established according to theprocedure of 7.1.5.1.4 Probe SupportThe probe support shall allow theprobes to be lowered perpendicularly onto the surface of thespecimen so that the center of the array is ce
19、ntered on thespecimen within 610 % of the specimen length l and width w.5.2 Electrical Measuring Apparatus:5.2.1 The electrical apparatus shall consist of a suitablevoltmeter, current source, ammeter, and electrical connections(see 7.2).5.2.2 Voltmeter with input impedance 104times the V/Iratio of t
20、he film. A vacuum-tube voltmeter, a digital voltmeter,or similar high-impedance input apparatus is suitable.5.2.3 Current Source with current regulation and stabilityof 60.1 % or better. The recommended current range is from0.01 to 100 mA.5.2.4 Ammeter capable of reading direct current in therange f
21、rom 0.01 to 100 mA to an accuracy of 60.1 % or better.5.2.5 The current source and ammeter are connected to theouter probes; the voltmeter is connected to the inner probes.5.3 Specimen SupportA copper block at least 100 mm(approximately 4 in.) in lateral dimensions and at least 40 mm(approximately 1
22、.5 in.) thick, shall be used to support thespecimen and provide a heat sink. It shall contain a hole thatwill accommodate a thermometer (see 5.4) in such a mannerthat the center of the bulb of the thermometer shall be not morethan 10 mm below the central area of the top of the blockwhere the specime
23、n is to be placed.5.4 Thermometer having a range from 8 to 32C andconforming to the requirements for Thermometer 63C asprescribed in Specification E 1.5.5 Vernier Calipers.5.6 Toolmakers Microscope capable of measuring incre-ments of 2.5 m.6. Test Specimen6.1 The specimen shall consist of a continuo
24、us rectangularthin metallic film with a thickness greater than 0.01 m andless than 100 m. Thickness variation shall be less than 610 %of the nominal thickness for thickness from 0.01 m to 0.1 m,inclusive; for greater thicknesses, the variation shall be lessthan 65 % of the nominal thickness. The spe
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