ASTM F1709-1997(2002) Standard Specification for High Purity Titanium Sputtering Targets for Electronic Thin Film Applications《电子薄膜用高纯度钛溅射靶机的标准规范》.pdf
《ASTM F1709-1997(2002) Standard Specification for High Purity Titanium Sputtering Targets for Electronic Thin Film Applications《电子薄膜用高纯度钛溅射靶机的标准规范》.pdf》由会员分享,可在线阅读,更多相关《ASTM F1709-1997(2002) Standard Specification for High Purity Titanium Sputtering Targets for Electronic Thin Film Applications《电子薄膜用高纯度钛溅射靶机的标准规范》.pdf(3页珍藏版)》请在麦多课文档分享上搜索。
1、Designation: F 1709 97 (Reapproved 2002)Standard Specification forHigh Purity Titanium Sputtering Targets for Electronic ThinFilm Applications1This standard is issued under the fixed designation F 1709; the number immediately following the designation indicates the year oforiginal adoption or, in th
2、e case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon (e) indicates an editorial change since the last revision or reapproval.1. Scope1.1 This specification covers pure titanium sputtering tar-gets used as a raw material in
3、 fabricating semiconductorelectronic devices.1.2 This standard sets purity grade levels, physical at-tributes, analytical methods, and packaging.1.2.1 The grade designation is a measure of total metallicimpurity content. The grade designation does not necessarilyindicate suitability for a particular
4、 application because factorsother than total metallic impurity may influence performance.2. Referenced Documents2.1 ASTM Standards:E 112 Test Methods for Determining Average Grain Size23. Terminology3.1 Definitions of Terms Specific to This Standard:3.1.1 finished product, nfor the purposes of this
5、standard,a “finished product” is a manufactured sputtering target, readyfor use.3.1.2 material lot, nfor the purpose of this standard,a“lot” is material melted into one ingot, and processed as onecontinuous batch in subsequent thermal-mechanical treat-ments.4. Classification4.1 Grades of titanium sp
6、uttering targets are defined inTable 1, based upon total metallic impurity content of theelements listed in Table 2. Impurity contents are reported inparts per million by weight (wt ppm). Higher purity grades, forexample “5N5” and“ 6N”, may be provided, as agreed uponbetween the purchaser and the su
7、pplier.4.2 Purity grade and total metallic impurity levels are basedupon the suite of elements listed in Table 2.5. Ordering Information5.1 Orders for pure titanium sputtering targets shall includethe following:5.1.1 Grade (see 4.1),5.1.2 Special requirements concerning impurities, if re-quired (see
8、 6.1, 6.2, 6.3, 6.4),5.1.3 Grain size, if required (Section 7),5.1.4 Configuration (Section 8),5.1.5 Certification required (Section 12), and5.1.6 Whether or not a sample representative of the finishedproduct is required to be provided by the supplier to thepurchaser.6. Impurities6.1 The minimum sui
9、te of metallic impurity elements to beanalyzed is defined in Table 2. Acceptable analysis methodsand detection limits are specified in Section 11. Elements notdetected will be counted and reported as present at theminimum detection limit (“mdl”). Additional elements may beanalyzed and reported as ag
10、reed upon between the purchaserand the supplier, but these shall not be counted in defining thegrade designation.6.2 Cesium, chlorine, phosphorus, and tantalum presentparticular analysis problems. The limits, analysis method, andmdl may be as agreed upon between the purchaser and thesupplier.1This s
11、pecification is under the jurisdiction of ASTM Committee F01 onElectronics and is the direct responsibility of Subcommittee F01.17 on SputterMetallization.Current edition approved Dec. 10, 2002. Published May 2003. Originallyapproved in 1996. Last previous edition approved in 1997 as F 1709 97.2Annu
12、al Book of ASTM Standards, Vol 03.01.TABLE 1 Titanium Sputtering Target GradesGrade Purity, % Maximum Total Metallic ImpurityContent, wt ppm4N 99.99 1004N5 99.995 505N 99.999 10TABLE 2 Suite of Metallic Elements to be Analyzed and Reportedaluminum iron silicon vanadiumchromium lead silver zinccobalt
13、 lithium potassium sodiumzirconium copper magnesium thoriumboron manganese tin molybdenumtungsten nickel uranium1Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.6.3 Nonmetallic elements which shall be analyzed andreported are carbon,
14、hydrogen, nitrogen, oxygen, and sulfur.Maximum limits for nonmetallic impurities shall be as agreedupon between the purchaser and the supplier.6.4 Acceptable limits and analytical techniques for particu-lar elements in critical applications may be agreed uponbetween the purchaser and the supplier.7.
15、 Grain Size7.1 The average and the maximum grain size shall be asagreed upon between the purchaser and the supplier.7.2 Average grain size shall be measured and reported inaccordance with Test Methods E 112, or other equivalentmethod.7.3 Maximum grain size shall be established by making anoptical or
16、 scanning electron micrograph of a polished andetched specimen typical of the finished product. The magnifi-cation must be calibrated to 6 10 % of nominal using anappropriate gage. At least 50 grains must be resolved in themicrograph. The maximum grain size is the diagonal measureof the largest tita
17、nium crystal visible in the field of view,divided by the magnification.7.4 Average grain size and maximum grain size can alter-natively be established using computer-assisted image analysismethods. If image analysis methods are used, then the averagegrain size is defined as the mean value obtained f
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