BS QC 750109-1994 Specification for harmonized system of quality assessment for electronic components Blank detail specification Rectifier diodes (including avalanche rectifier dio.pdf

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1、BRITISH STANDARD BS QC 750109:1993 IEC747-2-2: 1993 Specification for Harmonized system of quality assessment for electronic components Blank detail specification Rectifier diodes(including avalanche rectifier diodes), ambient and case-rated, for currents greater than100ABSQC750109:1993 BSI 10-1999

2、ISBN 0 580 35531 4 National foreword This British Standard has been prepared under the direction of the Electronic Components Standards Policy Committee. It is identical with IEC747-2-2:1993(QC750109) Semiconductor devices Discrete devices Part 2: Rectifier diodes Section 2: lank detail specificatio

3、n for rectifier diodes(including avalanche rectifier diodes), ambient and case-rated for currents greater than100A, published by the International Electrotechnical Commission(IEC). A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards a

4、re responsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. Summary of pages This document comprises a front cover, an inside front cover, pagesi andii, pages1 to10 and a back cover. This standard has been updated (see c

5、opyright date) and may have had amendments incorporated. This will be indicated in the amendment table on the inside front cover. Cross-references International Standard Corresponding British Standard IEC68-2-17:1978 BS2011 Environmental testing Part 2.1Q:1981 Test Q. Sealing Identical IEC191-2:1966

6、 BS3934 Mechanical standardization of semiconductor devices Part2:1992 Schedule of international drawings giving dimensions (Identical) IEC747-2:1983 BS6493 Semiconductor devices Section 1.2:1984 Recommendations for rectifier diodes (Identical) IEC747-10:1991/ QC700000:1981 BS QC700000:1991 Harmoniz

7、ed system of quality assessment for electronic components. Semiconductor devices. Generic specification for discrete devices and integrated circuits (Identical) IEC747-11:1985/ QC750000:1985 BS QC750000:1986 Harmonized system of quality assessment for electronic components. Discrete semiconductor de

8、vices. Sectional specification (Identical) IEC749:1984 BS6493 Semiconductor devices Part3:1985 Mechanical and climatic test methods (Identical) Amendments issued since publication Amd. No. Date CommentsBSQC750109:1993 BSI 10-1999 i Contents Page National foreword Inside front cover Introduction 1 1

9、Mechanical description 2 2 Short description 2 3 Categories of assessed quality 2 4 Limiting values 3 5 Electrical characteristics 5 6 Marking 6 7 Ordering information 6 8 Test conditions and inspection requirements 6 9 Group D Qualification approval tests 10 10 Additional information 10 Figure 1 Cu

10、rrent derating curve for a rectifier diode 4ii blankBSQC750109:1993 BSI 10-1999 1 Introduction The IEC Quality Assessment System for Electronic Components is operated in accordance with the statutes of the IEC and under the authority of the IEC. The object of this system is to define quality assessm

11、ent procedures in such a manner that electronic components released by one participating country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the need for further testing. This blank detail specification is one

12、 of a series of blank detail specifications for semiconductor devices and shall be used with the following IEC publications: IEC747-10/QC700000(1991), Semiconductor devices Discrete devices and integrated circuits Part10: Generic specification for discrete devices and integrated circuits. IEC747-11/

13、QC750100(1985), Semiconductor devices Discrete devices and integrated circuits Part11:Sectional specification for discrete devices. Required information Numbers shown in brackets on this and the following pages correspond to the following items of required information, which should be entered in the

14、 spaces provided. Identification of the detail specification 1 The name of the National Standards Organization under whose authority the detail specification is issued. 2 The IECQ number of the detail specification. 3 The numbers and issue numbers of the generic and sectional specifications. 4 The n

15、ational number of the detail specification, date of issue and any further information required by the national system. Identification of the component 5 Type of component. 6 Information on typical construction and applications. If a device is designed to satisfy several applications, this shall be s

16、tated here. Characteristics, limits and inspection requirements for these applications shall be met. If a device is electrostatic sensitive, or contains hazardous material, e.g.beryllium oxide, a caution statement should be added in the detail specification. 7 Outline drawing and/or reference to the

17、 relevant standard for outlines. 8 Category of assessed quality. 9 Reference data on the most important properties to permit comparison between component types. Throughout this standard, the texts given in square brackets are intended for guidance to the specification writer and should not be includ

18、ed in the detail specification. Throughout this standard, when a characteristic or rating applies, “” denotes that a value shall be inserted in the detail specification.BSQC750109:1993 2 BSI 10-1999 Name(address) of responsible NAI (andpossiblyofbody from which specification isavailable). 1 Number o

19、f IECQ detail specification plus issue number and/or date. QC750109-XXX 2 ELECTRONIC COMPONENT OF ASSESSED QUALITY IN ACCORDANCE WITH: Generic specification: Publication747-10/QC700000 Sectional specification: Publication747-11/QC750100 and national references if different. 3 National number of deta

20、il specification. This box need not be used if the National number repeats IECQ number. 4 DETAIL SPECIFICATION FOR: RECTIFIER DIODES(INCLUDING AVALANCHE RECTIFIER DIODES), AMBIENT AND CASE-RATED, FOR CURRENTS GREATER THAN100 A Type number(s) of the relevant device(s). Ordering information: seeclause

21、7 of this standard. 5 1 Mechanical description 2 Short description Outline references: IEC191-2. mandatory if available and/or national if there is no IEC outline. Outline drawing may be transferred to or given with more details in clause10 of this standard. 7 Rectifier diodes(including avalanche re

22、ctifier diode), ambient and case-rated, for currents greater than100A. Semiconductor material: Si Encapsulation: cavity or non-cavity. Applications(s): seeclause5 of this standard. CAUTION: Observe precautions for handling ELECTROSTATIC SENSITIVE DEVICES if applicable 6 Terminal identification drawi

23、ng showing pin assignments including graphical symbols. 3 Categories of assessed quality from subclause2.6 of the generic specification. 8 Marking: letters and figures, or colour code. The detail specification shall prescribe the information tobe marked on the device, if any. Seesubclause2.5 of the

24、generic specification and/or clause6 of this standard. Polarity indication, if a special method is used. Reference data 9 Information about manufacturers who have components qualified to this detail specification is available in the current Qualified Products List.BSQC750109:1993 BSI 10-1999 3 4 Lim

25、iting values (absolute maximum rating system) These values apply over the operating temperature range unless otherwise specified. Repeat only subclause numbers used, with title. Any additional values shall be given at the appropriate place, but without subclause number(s). Curves should preferably b

26、e given under clause10 of this standard. Subclause Parameters Symbol Value min. max. 4.1 4.2 4.3 4.4 4.4.1 4.4.2 4.4.3 4.4.4 4.5 4.5.1 4.5.2 4.5.3 4.5.4 4.5.5 Operating ambient or case temperatures Storage temperatures Virtual junction temperature(if required) Maximum value of the junction temperatu

27、re for which the voltage and current ratings in 4.4 and 4.5 apply Voltage: Any condition such as time, frequency, temperature, mounting method, etc., shall be stated.(See note 1) Repetitive peak reverse voltage Crest working reverse voltage Non-repetitive peak reverse voltage Direct reverse voltage,

28、 where applicable Current: Any condition such as time, frequency, temperature, mounting method, etc., shall be stated. Mean forward current at specified T break(seeFigure 1) In single-phase circuit, sinusoidal180 conduction angle with resistive load If applicable, mean forward current at specified T

29、 break(seeFigure 1), rectangular waveshape, with specified duration t pand duty factor $ Repetitive peak forward current (if applicable) Direct forward current (if applicable) Surge forward current. The surge current rating corresponds to the maximum current applied after continuous operation at the

30、 maximum value of the mean forward current. The following current ratings correspond to the maximum current permissible for a half-sine wave(10 ms50 Hz at8,3 ms at60 Hz): a) without reapplication of reverse voltage b) with reapplication of reverse voltage T amb/case T stg T (vj) V RRM V RWM V RSM V

31、RD I F(AV)1 I F(AV)2 I FRM I FD I FSM I FSM1 I FSM2 BSQC750109:1993 4 BSI 10-1999 Subclause Parameters Symbol Value min. max. 4.5.6 4.6 4.7 For case-rated devices only, I 2 t max. Maximum value, sinusoidal waveform, for10ms(50Hz) or8,3ms(60Hz): a) without reapplication of the reverse voltage, initia

32、l junction temperature T (vj) =25 C; b) with reapplication of the reverse voltage V RWMmax., initial junction temperature T (vj) =25 C. Power, if applicable Surge reverse power(if applicable) Mechanical ratings Mounting torque(if applicable) I 2 t I 2 t 1 I 2 t 2 P RSM NOTE 1Subclause4.4 may not be

33、applicable when V (BR)is given in 5.3. Figure 1 Current derating curve for a rectifier diodeBSQC750109:1993 BSI 10-1999 5 5 Electrical characteristics Seeclause8 of this standard for inspection requirements. Repeat only subclause numbers used, with title. Any additional characteristics should be giv

34、en at the appropriate place but without subclause number. When several devices are defined in the same detail specification, the relevant values should be given on successive lines, avoiding repeating identical values. Curves should preferably be given under clause10 of this standard. Subclause Char

35、acteristics and conditions at T amb or T case =25 C unlessotherwisespecified(seeclause4 ofthe generic specification) Symbol Value Tested min. max. 5.1 5.1.1 5.1.2 5.2 5.2.1 5.2.2 5.3 5.4 5.4.1 5.4.2 5.4.3 5.5 5.6 Forward voltage Maximum value at the peak current corresponding to x times the rated ma

36、ximum mean forward current I F(AV)1 If applicable, maximum value at the peak current of the rectangular waveform corresponding to the rated mean forward current I F(AV)2 Reverse current: Maximum value at the rated repetitive peak reverse voltage V RRM , or at a specified voltage when V (BR)is given

37、in 5.3: at T amb/case =25 C without forward power at T amb/case(max.) without forward power Avalanche breakdown voltage Minimum(and, for controlled-avalanche rectifier diodes, maximum) value at a specified current Recovery Recovered charge(where appropriate) maximum value, or maximum and minimum val

38、ues, under specified conditions Reverse recovery current(where appropriate): maximum value under specified conditions Reverse recovery time(where appropriate): maximum value under specified conditions Total power: Curves showing the maximum total power for resistive load as a function of the mean on

39、-state current with conduction angle as parameter Thermal resistance: Junction-to-amb/case (if T (vj)is specified in 4.3) V FM1 V FM2 I RRM1 I RRM2 V (BR) Q r I RM t rr P tot R thJA/ R thJC (note2) (note 2) A2b A2b A2b C2b A2b C2a NOTE 2Where appropriate.BSQC750109:1993 6 BSI 10-1999 6 Marking Any p

40、articular information other than that given in box 7 (clause1) and/or subclause 2.5 of the generic specification shall be given here. 7 Ordering information The following minimum information is necessary to order a specific device, unless otherwise specified: precise type reference(and nominal volta

41、ge value, if required); IECQ reference of detail specification with issue number and/or date when relevant; category of assessed quality as defined in subclause 3.7 of the sectional specification and, if required, screening sequence as defined in subclause 3.6 of the sectional specification; any oth

42、er particulars. 8 Test conditions and inspection requirements These are given in the following tables, where the values and exact test conditions to be used shall be specified as required for a given type, and as required by the relevant tests in the relevant publication. The choice between alternat

43、ive tests or test methods shall be made when a detail specification is written. When several devices are included in the same detail specification, the relevant conditions and/or values should be given on successive lines, where possible avoiding repetition of identical conditions and/or values. In

44、this section, reference to subclause numbers are made with respect to the generic specification unless otherwise stated and test methods are quoted from clause4 of the sectional specification. For sampling requirements, either refer to, or reproduce, values of subclause 3.7 of the sectional specific

45、ation, according to applicable category(ies) of assessed quality. Group A inspection and tests shall be performed on all devices. Group B inspections and tests shall be performed on a lot-by-lot basis to a sampling plan of an LTPD=30. Group C and D inspection and tests shall be performed on an LTPD=

46、50. Group A Lot by lot All tests are non-destructive (3.6.6) Inspection or test Symbol Reference Conditions at T amb or T case =25 C unless otherwise specified (seeclause4 of the generic specification) Inspection requirement limits min. max. Sub-group A1 External visual examination Subcl. 4.2.1.1 Su

47、b-group A2a Inoperatives Inverted polarity, V F 10USL, I R 100USL, unless otherwise specified Sub-group A2b Peak forward voltage Repetitive peak reverse current Breakdown voltage (if required) V FM I RRM1 V (BR) D-041 D-042 D-009 Sub-group A3 If applicable Sub-group A4 If applicableBSQC750109:1993 B

48、SI 10-1999 7 Group B Lot by lot (in the case of category I, seethe generic specification, subclause 2.6) LSL = lower specification limit from group A USL = upper specification limit Only tests marked (D) are destructive (3.6.6) Inspection or test Symbol Reference Conditions at T amb or T case =25 C

49、unless otherwise specified (seeclause4 of the generic specification) Inspection requirement limits min. max. Sub-group B1 Dimensions Subcl. 4.2.2 Annex B seeclause 1 of thisstandard Sub-group B3 Robustness of terminations Where applicable: Bending and/or (D) 749, ch. II, subcl. 1.2 Force=see749, ch. II, subcl. 1.2 No damage Torque (D) 749, ch. II, subcl.