IEEE 1160-1993 en Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors《辐射探测器用高纯锗晶体试验程序》.pdf

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1、Recognized as anAmerican National Standard (ANSI)The Institute of Electrical and Electronics Engineers, Inc. 345 E. 47th Street, New York, NY 10017Copyright 1993 by The Institute of Electrical and Electronics Engineers, Inc. All Rights Reserved. Published 1994. Printed in the United States of Americ

2、a.ISBN 155937-298-2No part of this publication may be reproduced in any form, in an electronic retrieval system or otherwise, without the priorwritten permission of the publisher.IEEE Std 1160-1993(R2006)IEEE Standard Test Procedures for High-Purity Germanium Crystals forRadiation DetectorsSponsor N

3、uclear Instruments and Detectors Committeeof theIEEE Nuclear and Plasma Sciences SocietyReaffirmed March 30, 2006Approved March 13, 1993IEEE-SA Standards BoardApproved August 30, 1993Reaffirmed January 13, 2000American National Standards InstituteAbstract: This standard applies to the measurement of

4、 bulk properties of high-purity germaniumas they relate to the fabrication and performance of germanium detectors for gamma rays and xrays. Such germanium is monocrystalline and has a net concentration of fewer than 1011electricallyactive impurity center per cm3, usually on the order of 1010cm3.Keyw

5、ords: high-purity germanium (HPGe), radiation detectorsIEEE Standardsdocuments are developed within the Technical Committees of theIEEE Societies and the Standards Coordinating Committees of the IEEE StandardsBoard. Members of the committees serve voluntarily and without compensation.They are not ne

6、cessarily members of the Institute. The standards developed withinIEEE represent a consensus of the broad expertise on the subject within the Instituteas well as those activities outside of IEEE that have expressed an interest in partici-pating in the development of the standard.Use of an IEEE Stand

7、ard is wholly voluntary. The existence of an IEEE Standarddoes not imply that there are no other ways to produce, test, measure, purchase, mar-ket, or provide other goods and services related to the scope of the IEEE Standard.Furthermore, the viewpoint expressed at the time a standard is approved an

8、d issued issubject to change brought about through developments in the state of the art and com-ments received from users of the standard. Every IEEE Standard is subjected toreview at least every five years for revision or reaffirmation. When a document ismore than five years old and has not been re

9、affirmed, it is reasonable to conclude thatits contents, although still of some value, do not wholly reflect the present state of theart. Users are cautioned to check to determine that they have the latest edition of anyIEEE Standard.Comments for revision of IEEE Standards are welcome from any inter

10、ested party,regardless of membership affiliation with IEEE. Suggestions for changes in docu-ments should be in the form of a proposed change of text, together with appropriatesupporting comments.Interpretations: Occasionally questions may arise regarding the meaning of portionsof standards as they r

11、elate to specific applications. When the need for interpretationsis brought to the attention of IEEE, the Institute will initiate action to prepare appro-priate responses. Since IEEE Standards represent a consensus of all concerned inter-ests, it is important to ensure that any interpretation has al

12、so received the concurrenceof a balance of interests. For this reason IEEE and the members of its technical com-mittees are not able to provide an instant response to interpretation requests except inthose cases where the matter has previously received formal consideration. Comments on standards and

13、 requests for interpretations should be addressed to:Secretary, IEEE Standards Board445 Hoes LaneP.O. Box 1331Piscataway, NJ 08855-1331USAIEEE Standards documents are adopted by the Institute of Electrical and ElectronicsEngineers without regard to whether their adoption may involve patents on artic

14、les,materials, or processes. Such adoption does not assume any liability to any patentowner, nor does it assume any obligation whatever to parties adopting the standardsdocuments.iiiIntroduction(This introduction is not a part of IEEE Std 1160-1993, IEEE Standard Test Procedures for High-Purity Germ

15、aniumCrystals for Radiation Detectors.)The subject of this standard is the measurement of the bulk properties of high-purity germanium (HPGe)intended for use in detectors of ionizing radiation. Detector manufacturers desire numerical data that can be used to predict the performance of a detector hav

16、-ing approximately coaxial geometry. However, because of the many variations in the physical characteris-tics, the final detector performance cannot be fully predicted from the crystal manufacturers measurements.This standard defines terminology and measuring techniques for determining and communica

17、ting key crys-tal parameters.At the time that this standard was approved, the Nuclear Instruments and Detectors Committee of the IEEENuclear and Plasma Sciences Society had the following membership:Sanford Wagner,ChairLouis Costrell,SectretaryM. L. Bauer E. Fairstein D. E. PersykJ. G. Bellian F. S.

18、Goulding P. L. PhelpsJ. A. Coleman R. M. Keyser D. E. StilwellL. S. Darken F. A. Kirsten K. L. SwinthW. K. Dawson G. F. Knoll M. P. UnterwegerJ. Detko H. W. Kraner F. J. WalterG. L. MillerL. S. Darken served as project leader for the development of this standard. Other contributors wereP. Clauws, L.

19、 Van Goethem, and E. E. Haller.The American National Standards Committee on Nuclear Instruments (N42), at the time it approved thisstandard, had the following representatives:Louis Costrell,ChairmanLinda A. Gargiulo,SecretaryOrganization Represented Name of RepresentativeAmerican Conference of Gover

20、nmental Industrial Hygenists Jesse LiebermanBattelle Pacific Northwest Laboratories J. M. SelbyHealth Physics Society J. B. Horner KuperJ. M. Selby (Alt.)Institute of Electrical and Electronic Engineers Louis CostrellJuilian Forster(Alt.)A. J. Spurgin (Alt.)Lawrence Berkely Laboratory E. J. LampoLaw

21、rence Livermore National Laboratory P. L. PhelpsOak Ridge National Laboratory H. R. BrashearU. S. Department of the Army Edward GroeberU. S. Department of Commerce, NIST Louis CostrellU. S. Department of Energy, OHER/PCRSD Gerald GoldsteinU. S. Federal Emergency Management Agency C. R. SiebentrittU.

22、 S. Nuclear Regulatory Commission E. C. WenzingerMembers-at-Large J. G. BellianE. A. CorteJ. M. GallagherJ. E. McLaughlinD. A. MackE. J. VallarioSanford WagnerivThe following persons were on the balloting committee that approved this document for submission to theIEEE Standards Board:M. L. Bauer E.

23、Fairstein G. L. MillerJ. G. Bellian F. S. Goulding D. E. PersykJ. A. Coleman R. M. Keyser P. L. PhelpsL. Costrell F. A. Kirsten D. E. StilwellL. S. Darken G. F. Knoll K. L. SwinthW. K. Dawson H. W. Kraner S. WagnerJ. Detko F. J. WalterWhen the IEEE Standards Board approved this standard on Sept. 17,

24、 1992, it had the following membership: Marco Migliaro,ChairDonald C. Loughry,Vice ChairAndrew G. Salem,SecretaryDennis Bodson Donald N. Heirman T. Don Michael*Paul L. Borrill Ben C. Johnson John L. RankineClyde Camp Walter J. Karplus Wallace S. ReadDonald C. Fleckenstein Ivor N. Knight Ronald H. Re

25、imerJay Forster* Joseph Koepfinger* Gary S. RobinsonDavid F. Franklin Irving Kolodny Martin V. SchneiderRamiro Garcia D. N. “Jim” Logothetis Terrance R. WhittemoreThomas L. Hannan Lawrence V. McCall Donald W. Zipse*Member EmeritusAlso included are the following nonvoting IEEE Standards Board liaison

26、s:Satish K. AggarwalJames BeallRichard B. EngelmanDavid E. SoffrinStanley WarshawAdam SickerIEEE Standards Project EditorvContentsCLAUSE PAGE1. Overview 11.1 Scope 11.2 Purpose. 12. References 23. Letter symbols 24. Introduction 35. Sample preparation and measurement of net electrically active impur

27、ity concentration |NA ND| 45.1 Sample preparation for van der Pauw measurements 45.2 Measurement and analysis . 65.3 Spatial dependence of (NA ND). 116. Deep-level transient spectroscopy (DLTS) for the characterization of point-defect trapping centers (NT) . 136.1 Equipment 146.2 Sample selection an

28、d preparation for DLTS 156.3 Measurement procedure. 156.4 Majority-carrier deep levels in p-type HPGe. 196.5 Majority-carrier deep levels in n-type HPGe. 206.6 Reporting 207. Crystallographic properties 207.1 Crystallographic orientation. 207.2 Sample preparation 207.3 Reporting 228. Bibliography 22

29、FIGURESFigure 5.2f(RAB,CD/RBC,DA) vs. RAB,CD/RBC,DA. 8Figure 5.3 Factor rfor n-type HPGe, two crystallographic orientations. 11Figure 5.4 Factor rfor p-type HPGe . 11Figure 6.1 DLTS waveforms and gate timing . 13Figure 6.2DVc/Vpwaveforms 18TABLESTable 1 Majority-carrier deep levels in p-type HPGe .

30、19viCLAUSE PAGEAnnex A 24Table A1 Round-robin measurements of n-type sample . 25Table A2 Round-robin measurements of p-type sample . 26Table A3 Magnetic fields used for measurements and rvalues for n-type and p-type HPGe 26Table A4 Average values and standard deviations, whole-slice measurements 27T

31、able A5 Supplementary data, n-type slicelaboratory #4, procedure B 27Table A6 p-Type data: direction of transient. 28Table A7 Averages for the measured drift mobility in units of 104cm2V1s1. 291IEEE Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors1. Overview1.1 Sco

32、peThis standard applies to the measurement of bulk properties of high-purity germanium as they relate to thefabrication and performance of germanium detectors for gamma rays and x rays. Such germanium is monoc-rystalline and has a net concentration of fewer than 1011 electrically active impurity cen

33、ters per cm3, usuallyon the order of 1010cm3. Test and measurement procedures for fabricated germanium detectors are given inIEEE Std 325-1986 and IEEE Std 759-1984.1.2 PurposeThe purpose of this standard is to establish uniform procedures for measurements and analyses in the deter-mination and repo

34、rting of bulk properties relevant to germanium radiation detector fabrication and perfor-mance. These properties are net electrically active impurity concentrations, |NA ND|, the concentration ofisolated defects with deep electronic levels NT, and certain crystallographic properties. The techniquesd

35、escribed herein are those that have found general use in the industry, are practical, and provide verifiableand desired information to the detector fabricator. As an aid to the reader, an annex is included for background material. Paragraph numbers in the annex areprefixed by the letter “A,” while t

36、he numerical parts of the numbers correspond to those in the main body ofthe text to which they pertain.Not all tests described herein are mandatory; however, any tests that are intended to conform to this standardshall be performed according to its provisions.Mandatory procedures are designated by

37、the word “shall.” Recommended procedures are designated by thewords “should” or “recommended.” Optional procedures are designated by the word “may.”IEEEStd 1160-1993 IEEE STANDARD TEST PROCEDURES FOR HIGH-PURITY22. ReferencesThis document shall be used in conjunction with the standards listed below.

38、 References to material appear-ing in journals and in other publications are listed in clause 8. IEC 759 (1983), Standard test procedures for semiconductor X-ray energy spectrometers.1IEC 973 (1989), Test procedures for germanium gamma-ray detectors.IEEE Std 325-1986, IEEE Standard Test Procedures f

39、or Germanium Gamma-Ray Detectors (ANSI).2IEEE Std 759-1984, IEEE Standard Test Procedures for Semiconductor X-Ray Energy Spectrometers(ANSI).3. Letter symbolsFrequently used letter symbols are defined below. Infrequently used symbols are defined where they areintroduced in the text.Bmagnetic flux de

40、nsity in tesla (see T)C coulombsCcapacitance in faradsCdcapacitance of the depleted region in a diodeDLTS deep-level transient spectroscopyDchange in eelectronic charge, 1.60 1019coulombseremission rate from a localized electronic level in s1exp (z) base of the natural logarithms (2.728) to the expo

41、nent, zE energy associated with an electronic level in the band gapffrequency in hertzHPGe high-purity germaniumkBoltzmans constant, 8.617 105eV K1K kelvinLN liquid nitrogenNA ND3net electrically active impurity concentration per cm3NTdeep-level impurity-center concentration per cm3Wohm(s)rconstant

42、associated with measurement of |NA ND| by Hall effectRresistance in ohmsRHHall coefficient in cm3C1rresistivity in W cms secondsttime in seconds1IEC publications are available from IEC Sales Department, Case Postale 131, 3 rue de Varemb, CH-1211, Genve 20, Switzerland/Suisse. IEC publications are al

43、so available in the United States from the Sales Department, American National Standards Institute, 11West 42nd Street, 13th Floor, New York, NY 10036, USA.2IEEE publications are available from the Institute of Electrical and Electronics Engineers, Service Center, 445 Hoes Lane, P.O. Box1331, Piscat

44、away, NJ 08855-1331, USA.3The sign of the quantity indicates the type of carrier (n or p). Where only the magnitude is required, the expression will appear as|NA ND|.IEEEGERMANIUM CRYSTALS FOR RADIATION DETECTORS Std 1160-19933Ttemperature in kelvinsT tesla (one T = 104gauss)temission time in second

45、s drift mobility in cm2V1s1HHall mobility in cm2V1s1nelectron drift mobility (cm2V1s1) in a semiconductor crystalphole drift mobility (cm2V1s1) in a semiconductor crystalVvolt(s)Vppulse amplitude (in volts) in deep-level transient spectroscopyVrreverse bias in voltsw2pf(see f)Wppulse duration (in se

46、conds) in deep-level transient spectroscopy4. IntroductionGermanium fulfilling the necessary size and purity requirements for high-purity germanium (HPGe) detec-tors of ionizing radiation presents special problems in characterization resulting from the high resistivity ofthe material (10 kW cm at 77

47、 K), from the degree of impurity compensation that can be encountered, andfrom difficulties in suitably describing the distribution in the large volume that may form a single device(hundreds of cm3). Material properties of HPGe have been reviewed in B7 and B10.Other publicationsare also highly relev

48、ant. Existing standards are useful, but are not focused on the problems mentioned above.One of the most important characteristics of HPGe is the net electrically active impurity concentration,|NAND|, because it determines the depletion voltage required for an operating detector. Although, in prin-ci

49、ple, the concentration can be extracted from a C2vs. Vplot for a diode fabricated from the material to becharacterized, such measurements may not readily yield carrier type, do not quantify nonuniformity, and aremore time consuming than other techniques. The usual practice has been to determine (NA ND), with thesign indicating n-type or p-type on the basis of transport measurements using the van der Pauw technique(see B25) on lamellar samples immersed in liquid nitrogen (LN).In the van der Pauw technique, |NA ND| can be computed either from t