JEDEC JESD51-14-2010 Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices with Heat Flow Trough a Single Pat.pdf

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1、JEDEC STANDARD Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices with Heat Flow Trough a Single Path JESD51-14 NOVEMBER 2010 JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material th

2、at has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel. JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purcha

3、sers, facilitating interchangeability and improvement of products, and assisting the purchaser in selecting and obtaining with minimum delay the proper product for use by those other than JEDEC members, whether the standard is to be used either domestically or internationally. JEDEC standards and pu

4、blications are adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the JEDEC standards or publications.

5、 The information included in JEDEC standards and publications represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint. Within the JEDEC organization there are procedures whereby a JEDEC standard or publication may be furthe

6、r processed and ultimately become an ANSI standard. No claims to be in conformance with this standard may be made unless all requirements stated in the standard are met. Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC at

7、 the address below, or call (703) 907-7559 or www.jedec.org Published by JEDEC Solid State Technology Association 2010 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 This document may be downloaded free of charge; however JEDEC retains the copyright on this material. By downloading

8、this file the individual agrees not to charge for or resell the resulting material. PRICE: Please refer to www.jedec.org Printed in the U.S.A. All rights reserved PLEASE! DONT VIOLATE THE LAW! This document is copyrighted by JEDEC and may not be reproduced without permission. Organizations may obtai

9、n permission to reproduce a limited number of copies through entering into a license agreement. For information, contact: JEDEC Solid State Technology Association 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 or call (703) 907-7559 JEDEC Standard No. 51-14 -i- TRANSIENT DUAL INTERF

10、ACE TEST METHOD FOR THE MEASUREMENT OF THE THERMAL RESISTANCE JUNCTION-TO-CASE OF SEMICONDUCTOR DEVICES WITH HEAT FLOW TROUGH A SINGLE PATH Contents Page Foreword ii Introduction iii 1 Scope 1 2 Normative references 1 3 Terms and definitions 2 4 Junction-to-Case Thermal Resistance Measurement (Test

11、Method) 2 4 .1 Measurement of a transient cooling curve (Thermal Impedance ZJC) 2 4.1.1 Measurement of the junction temperature 2 4.1.2 Recording the ZJC-curve (cooling curve) 2 4.1.3 Offset Correction 3 4.1.4 ZJCcurve 5 4.1.5 Remarks 5 4.2 Transient Dual Interface Measurement Procedure 5 4.2.1 Meas

12、urement principle 5 4.2.2 Temperature controlled heat-sink 6 4.2.3 Measurement of ZJCcurve (1) w/o thermal interface material 7 4.2.4 Measurement of ZJCcurve (2) with thermal interface material 8 4.2.5 Minimum difference of both ZJC-curves at steady state 8 4.2.6 Remarks 8 5 Evaluation of the Transi

13、ent Dual Interface Measurement 8 5.1 Preliminary comments 8 5.2 Method 1: Determination of JCbased on the point of separation of the ZJCcurves 10 5.2.1 Definition of the point of separation 10 5.2.2 How to choose 12 5.2.3 Evaluation procedure step by step 13 5.3 Method 2: Determination of JCbased on

14、 the point of separation of the structure functions 15 5.3.1 Preliminary comments 15 5.3.2 Evaluation procedure step by step 16 6 Information to be reported 18 7 References 18 Annex A Definition of Time Constant Spectra and Cumulative Structure Functions 19 Annex B Obtaining Time Constant Spectra fr

15、om Zth-Functions 29 Annex C Transformation between the FOSTER and CAUER RC-network 33 Annex D Transient Dual Interface Measurement Evaluation Software Benchmark 36 JEDEC Standard No. 51-14 -ii- Foreword This document has been prepared by the JEDEC JC-15 Committee on Thermal Characterization. It spec

16、ifies the details and provisions of a method for the reproducible measurement of the “Junction-to-Case” thermal resistance RJC(JC) of semiconductor devices with a one-dimensional conductive heat flow path from the heat dissipating junction of the semiconductor to one case surface of the package. One

17、-dimensional means, that the heat flow direction follows a line. However there is of course heat spreading vertical to that flow direction resulting in a 3-dimensional flow field. The thermal resistance junction-to-case is one of the most important thermal characteristics of a semiconductor device s

18、tating the thermal performance limit under best possible cooling conditions over one package case surface by contacting this surface to a high performance heat sink. RJCshould be reported in the data sheet of the device. The lower the value the better is the thermal performance. Historically the jun

19、ction-to-case thermal resistance RJC(JC) of semiconductor devices has been determined by direct measurement of the temperature difference between junction and the case surface in contact with a water cooled copper heat sink as outlined in MIL Standard 883 N1. Since the necessary thermocouple measure

20、ment of the case temperature is prone to errors, these results were often not sufficiently reproducible. One problem is a potential temperature distribution at the package case while the thermocouple measures the temperature just at its contact point to the case. This might not be the maximum case t

21、emperature. Another reason for a potentially too low case temperature reading is, that thermocouple bead is often not sufficiently insulated against the cold plate and could therefore be cooled from the wire and cold plate side. Further problems arise from considerable clamping pressure to be applie

22、d to press the semiconductor device against the heat sink, which closes delaminations. Another source of error is the influence of the drillhole for the thermocouple in the heatsink. This influence increases with smaller devices. This document specifies a measurement method of the junction-to-case t

23、hermal resistance RJC(JC) of semiconductor devices without a case temperature measurement by means of a thermocouple at one point. This considerably improves the reproducibility of RJCmeasurements and allows better comparison of the data and consistent measurements between companies. The document is

24、 an addition to the JESD51 series N2 of standards for thermal characterization of packaged semiconductor devices. It should be used in conjunction with the electrical test methods described in JEDEC JESD51-1, “Integrated Circuit Thermal Measurement Method - Electrical Test Method (Single Semiconduct

25、or Device)” N3, and document JESD51-12, “Guidelines for Reporting and Using Electronic Package Thermal Information” N5. JEDEC Standard No. 51-14 -iii- Introduction The junction-to-case thermal resistance JC is a measure of the ability of a semiconductor device to dissipate heat from the surface of t

26、he die to a heat sunk package surface. In JESD51-1 N3 it has been defined as “the thermal resistance from the operating portion of a semiconductor device to the outside surface of the package (case) closest to the chip mounting area when that same surface is properly heat sunk so as to minimize temp

27、erature variation across that surface”. The traditional thermocouple measurement as outlined in MIL standard 833 N1 requires the determination of the junction temperature TJ, the case temperature TC, and the heating power dissipation PH, while the device is properly heat-sunk at the case. The juncti

28、on-to-case thermal resistance is then calculated using HCJJCPTT (1) The result (1) shall be referred to herein as “steady-state JC”, since it is determined under steady-state conditions and relies on a spatial difference of the temperature along the heat flow path from junction to case. Its measurem

29、ent involves the difficulty to accurately measure the package case temperature with a thermocouple while that case surface is in close contact with a heat sink. Therefore different measurement set-ups are likely to produce deviant JCvalues. Contrary to the above, the method described in this documen

30、t is solely based on transient measurements of the junction temperature, with different cooling conditions at the heat sunk case surface. It does not require the knowledge of the case temperature TC, thus eliminating all errors involved with its determination. The method relies only on the measureme

31、nt of the junction temperature. It also does not need high pressure to assure good thermal contact to the heat sink. Transient Dual Interface (TDI) Measurement Principle and Procedure The thermal impedance or Zth-function ZJC(t) of a semiconductor device which is heated with constant power PHstartin

32、g at time t = 0 while its case surface is properly heat-sunk shall be defined as HJJJCPtTtTtZ)0()()(, (2) i.e., the thermal impedance equals the time-dependent change of the junction temperature TJ(t) divided by the heating power1. If the cooling condition at the package case is changed, this should

33、 have no influence on the thermal impedance until the temperature starts to increase at the package case where the contact to the heat sink is. A measurement with different contact resistance however changes the total thermal resistance at steady-state and therefore separates the impedance curves of

34、 different measurements starting from the point where the external contact resistance contributes, which can be identified as the package case interface. Two thermal impedance measurements with different contact resistance for cooling the heat sunk package case surface are done to identify this surf

35、ace in transient measurements. The cumulative thermal resistance at the separation point of these two measurements is defined as RJC(JC). 1When plotted as a diagram, Z(t) curves are shown in logarithmic time scale. Conversion from linear time scale to logarithmic time scale is relevant from data pro

36、cessing point of view and will be discussed further in detail in the Annexes of this document. When mathematically relevant, linear time and logarithmic time is distinguished by notation t and z respectively, where z = ln t. JEDEC Standard No. 51-14 -iv- JEDEC Standard No. 51-14 Page 1 TRANSIENT DUA

37、L INTERFACE TEST METHOD FOR THE MEASUREMENT OF THE THERMAL RESISTANCE JUNCTION TO CASE OF SEMICONDUCTOR DEVICES WITH HEAT FLOW TROUGH A SINGLE PATH (From JEDEC Board Ballot JCB-10-59, formulated under the cognizance of the JC-15 Committee on Thermal Characterization.) 1 Scope This document specifies

38、 a test method (referred to herein as “Transient Dual Interface Measurement”) to determine the conductive thermal resistance “Junction-to-Case” RJC(JC) of semiconductor devices with a heat flow through a single path, i.e., semiconductor devices with a high conductive heat flow path from the die surf

39、ace that is heated to a package case surface that can be cooled by contacting it to an external heat sink. The thermal resistance measured using this document is RJCxor JCx, where x denotes the package case side, where the heat is extracted, usually top (x= top) or bottom (x= bot) side. 2 Normative

40、reference The following normative documents contain provisions that, through reference in this text, constitute provisions of this standard. For dated references, subsequent amendments to, or revisions of, any of these publications do not apply. However, parties to agreements based on this standard

41、are encouraged to investigate the possibility of applying the most recent editions of the normative documents indicated below. For undated references, the latest edition of the normative document referred to applies. N1 MIL-STD-883E, METHOD 1012.1, Thermal Characteristics of Integrated Circuits, 4 N

42、ovember 1980 N2 JESD51, Methodology for the Thermal Measurement of Component Packages (Single Semiconductor Devices). This is the overview document for this series of specifications. N3 JESD51-1, Integrated Circuit Thermal Measurement Method - Electrical Test Method N4 JESD51-4, Thermal Test Chip Gu

43、ideline (Wire Bond Type Chip) N5 JESD51-12, Guidelines for Reporting and Using Electronic Package Thermal Information N6 SEMI Test Method #G43-87, Test Method, Junction-to-Case Thermal Resistance Measurements of Moulded Plastic Packages N7 JESD51-13, Glossary of thermal measurement terms and definit

44、ions JEDEC Standard No. 51-14 Page 2 3 Terms and definitions For the purposes of this standard, the terms and definitions are given in N7 JESD51-13, “Glossary of thermal measurement terms and definitions” and the following apply: Further terms and definitions are explained at first occurrence in the

45、 text. 4 Junction-to-Case Thermal Resistance Measurement (Test Method) 4.1 Measurement of a transient cooling curve (Thermal Impedance ZJC) 4.1.1 Measurement of the junction temperature The junction temperature TJof the device under test (DUT) shall be measured as described in document JESD51-1 N3.

46、The ZJCcurve shall be recorded preferably after the heating power PHis switched off (cooling curve)2. That way the temperature sensitive parameter (TSP) will not be disturbed by the heating voltage or heating current and there is no need to control the heating power during the measurement. This meas

47、urement mode can be realized with most product chips as well as thermal test dies. Prior to the measurement of the ZJCcurve the TSP of each DUT shall be calibrated individually to account for inter-chip variations of the K-FACTOR, which relates Temperature to the TSP of the device. Although not reco

48、mmended, in principle also the heating curve can be used, if constant heating power PHduring the heating pulse time and no electrical cross-talk to a separate TSP device on the chip can be guaranteed1. Using the heating curve must be reported with the result data. 4.1.2 Recording the transient cooli

49、ng curve (ZJC) First a constant heating current IHshall be applied to the chip of the DUT to heat up the device until thermal steady-state is reached, i.e., until the junction temperature remains constant. If the chip does not provide separate structures for heating and sensing to allow monitoring of the TSP during heating, the temperature can either be monitored in dynamic mode (see JESD51-1) or else the heating time must be chosen long enough as to ensure that steady-state is reached. Since the DUT will be in contac