DLA SMD-5962-98605-1999 MICROCIRCUIT DIGITAL LOW VOLTAGE CMOS OCTAL DUAL SUPPLY TRANSLATING TRANSCEIVER WITH THREE- STATE OUTPUTS MONOLITHIC SILICON《微型电路 数字型 低压CMOS 带三态输出的八路双提供翻译式收.pdf

《DLA SMD-5962-98605-1999 MICROCIRCUIT DIGITAL LOW VOLTAGE CMOS OCTAL DUAL SUPPLY TRANSLATING TRANSCEIVER WITH THREE- STATE OUTPUTS MONOLITHIC SILICON《微型电路 数字型 低压CMOS 带三态输出的八路双提供翻译式收.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-98605-1999 MICROCIRCUIT DIGITAL LOW VOLTAGE CMOS OCTAL DUAL SUPPLY TRANSLATING TRANSCEIVER WITH THREE- STATE OUTPUTS MONOLITHIC SILICON《微型电路 数字型 低压CMOS 带三态输出的八路双提供翻译式收.pdf（19页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR -MO -DA) APPROVEDREVSHEETREVSHEET 15 16 17 18REV STATUS REVOF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14PMIC N/A PREPARED BY Joseph A. KerbyDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYCharles F. Saffle, Jr.COLUMBUS, OHIO 43216THIS DRAWING I

2、S AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMonica L. PoelkingMICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS,OCTAL DUAL SUPPLY TRANSLATING TRANSCEIVERAND AGENCIES OF THEDEPARTMENT OF DEFENSE DRAWING APPROVAL DATE99/01/07WITH THREE-STATE OUTPUTS, MONOLITHICSILICONAMSC N/A REVISION LEVEL SIZEA CAGE CODE 6

3、7268 5962-98605SHEET 1 OF 18DSCC FORM 2233APR 97 5962 -E098-99DISTRIBUTION STATEMENT A . Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98605DEFENSE SUPPLY

4、 CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 2DSCC FORM 2234APR 971. SCOPE1.1 Scope . This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishes

5、 are available and are reflected in the Partor Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.1.2 PIN . The PIN is as shown in the following example:5962 - 98605 01 Q K XFederal RHA Device Device Case Lead stock class designat

6、or type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator . Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and aremarked with the appropriate RHA designator. Device class

7、M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash ( -) indicates a non -RHA device.1.2.2 Device type(s) . The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 54L

8、VX3245 Octal dual supply translati ng transceiverwith three-state outputs1.2.3 Device class designator . The device class designator is a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self -certification t o the requirements fo

9、r MIL-STD-883 compliant,non -JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s) . The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals

10、Package styleK GDFP2-F24 or CDFP3-F24 24 Flat packL GDIP3-T24 or CDIP4-T24 24 Dual-in-line3 CQCC1-N28 28 Square leadless chip carrier 1 /1.2.5 Lead finish . The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendixA for device class M.1 / This package is

11、not available from an approved source of supply as of the date of this drawing.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98605DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 3D

12、SCC FORM 2234APR 971.3 Absolute maximum ratings . 1 / 2 / 3 /Supply voltage range (V CCA , V CCB ) . -0.5 V dc to +7.0 V dcDC input voltage range (V IN ) -0.5 V dc to V CCB + 0.5 V dcDC input / output voltage range, An (V I/O ) -0.5 V dc to V CCA + 0.5 V dcDC input / output voltage range, Bn (V I/O

13、) -0.5 V dc to V CCB + 0.5 V dcDC input diode current (I IK ) 20 mADC output diode current (I OK ) . 50 mADC output source or sink current (I OUT ) (per pin) 50 mADC V CC or GND current . 200 mAMaximum power dissipation (P D ) 500 mWStorage temperature range (T STG ) -65 C to +150 CLead temperature

14、(soldering, 10 seconds) . +300 CThermal resistance, junction -to -case ( JC ) See MIL -STD -1835Junction temperature (T J ) +175 C 4 /1.4 Recommended operating conditions . 2 / 3 / 5 /Supply voltage range (V CCA ) +2.7 V dc to +3.6 V dcSupply voltage range (V CCB ) +4.5 V dc to +5.5 V dcInput voltag

15、e range (V IN ) . +0.0 V dc to V CCBInput / output voltage range, An (V I/O ) +0.0 V dc to V CCAInput / output voltage range, Bn (V I/O ) +0.0 V dc to V CCBMinimum high level input voltage (V IH ) . +2.0 V dcMaximum low level input voltage (V IL ) . +0.8 V dcMaximum high level output current, An (I

16、OH ):V CCA = 2.7 V -12.0 mAV CCA = 3.0 V to 3.6 V . -24.0 mAMaximum high level output current, Bn (I OH ):V CCB = 4.5 V to 5.5 V . -24.0 mAMaximum low level output current, An (I OL ):V CCA = 2.7 V +12.0 mAV CCA = 3.0 V to 3.6 V . +24.0 mAMaximum low level output current, Bn (I OL ):V CCB = 4.5 V to

17、 5.5 V . +24.0 mACase operating temperature range (T C ) . -55 C to +125 CInput rise or fall times ( t/ V) 0 to 8 ns/V1 / Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2 / Un

18、less otherwise noted, all voltages are referenced to GND.3 / The limits for the parameters specified herein shall apply over the full specified V CC range and case temperature rangeof -55 C to +125 C.4 / Maximum junction temperature shall not be exceeded except for allowable short dur ation burn-in

19、screening conditions inaccordance with method 5004 of MIL-STD-883.5 / Unused pins (inputs and Input/Outputs) must be held high or low. They may not float.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98605DEFE

20、NSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 4DSCC FORM 2234APR 972. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks . The following specification, standards, and handbooks form a partof this drawing to the extent specified herein. Unless otherw

21、ise specified, the issues of these documents are those listed in theissue of the Department of Defense Index of Specifications and Standards ( DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specif

22、ication for.STANDARDSDEPARTMENT OF DEFENSEMIL -STD -883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings ( SMDs).MIL -HDBK -

23、780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence . In the event of a conflict betwee

24、n the text of this drawing and the references cited herein, the text ofthis drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements . The individual item requirements for

25、 device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements fordevice

26、 class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.3.2 Design, construction, and physical dimensions . The design, construction, and physical dimensions shall be as specifiedin MIL-PRF-38535 and herein for device classes Q and V or

27、 MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines . The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections . The terminal connections shall be as specified on figure 1.3.2.3 Truth table . The truth table shall be as specified on figure 2.3.2.

28、4 Logic diagram . The logic diagram shall be as specified on figure 3.3.2.5 Ground bounce load circuit and waveforms . The ground bounce load circuit and waveforms shall be as specified onfigure 4.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAND

29、ARDMICROCIRCUIT DRAWINGSIZEA 5962-98605DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 5DSCC FORM 2234APR 973.2.6 Switching waveforms and test circuit . The switching waveforms and test circuit shall be as specified on figure 5.3.2.7 Radiation exposure circuit . The radi

30、ation exposure circuit shall be as specified when available.3.3 Electrical performance characteristics and postirradiation parameter limits . Unless otherwise specified herein, theelectrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply

31、over the fullcase operating temperature range.3.4 Electrical test requirements . The electrical test requirements shall be the subgroups specified in table II. The electricaltests for each subgroup are defined in table I.3.5 Marking . The part shall be marked with the PIN listed in 1.2 herein. In ad

32、dition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, theRHA designator s

33、hall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark . The certification mark for device classes Q and V shall be a “QML“ or “Q“ as requ

34、ired inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance . For device classes Q and V, a certificate of compliance shall be required from a QML -38535listed manufacturer in order to supply to the requirements o

35、f this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC -VA prior to listing as an approved source

36、of supply for thisdrawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 andherein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance . A certificate of conformance as requir

37、ed for device classes Q and V in MIL-PRF-38535 orfor device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.3.8 Notification of change for device class M . For device class M, notification to DSCC -VA of change of product (see 6.2herein

38、) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.3.9 Verification and review for device class M . For device class M, DSCC, DSCCs agent, and the acquiring activity retain theoption to review the manufacturers facility and applicable required documenta

39、tion. Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M . Device class M devices covered by this drawing shall be inmicrocircuit group number 37 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo rep

40、roduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98605DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 6DSCC FORM 2234APR 97Table I. Electrical performance characteristics .Test andMIL-STD-883test method 1 /Symbol Test

41、conditions 2 /-55 C T C +125 C+2.7 V V CCA +3.6 VV CCA V CCB Group AsubgroupsLimits 3 / Unit+4.5 V V CCB +5.5 Vunless otherwise specifiedMin MaxHigh level output voltage, AnV OH1 For all inputs affectingoutput under test, I OH = -100 A2.7 V 4.5 V 1, 2, 3 2.6 V3006 4 / V IN = V IL or V IHFor all othe

42、r inputs,3.6 V 5.5 V 3.5V IN = V CC or GNDI OH = -12 mA2.7 V 4.5 V 1, 2, 3 2.23.0 V 4.5 V 2.4I OH = -24 mA 3.0 V 4.5 V 1, 2, 3 2.2High level output voltage, BnV OH2 For all inputs affectingoutput under test, I OH = -100 A2.7 V 4.5 V 1, 2, 3 4.4 V3006 4 / V IN = V IL or V IHFor all other inputs,3.6 V

43、 5.5 V 5.4V IN = V CC or GND I OH = -24 mA 3.0 V 4.5 V 1, 2, 3 3.7Low level output voltage, AnV OL1 For all inputs affectingoutput under test, I OL = 100 A2.7 V 4.5 V 1, 2, 3 0.1 V3007 4 / V IN = V IL or V IHFor all other inputs,3.6 V 5.5 V 0.1V IN = V CC or GNDI OL = 12 mA2.7 V 4.5 V 1, 2, 3 0.43.0

44、 V 4.5 V 0.3I OL = 24 mA 3.0 V 4.5 V 1, 2, 3 0.4Low level output voltage, BnV OL2 For all inputs affectingoutput under test, I OL = 100 A2.7 V 4.5 V 1, 2, 3 0.1 V3007 4 / V IN = V IL or V IHFor all other inputs,3.6 V 5.5 V 0.1V IN = V CC or GND I OL = 24 mA 3.0 V 4.5 V 1, 2, 3 0.4Input current high3

45、010I IH For input under test, V IN = 5.5 VFor all other inputs, V IN = V CC or GND3.6 V 5.5 V 1, 2, 3 +1.0 AInput current low 3009I IL For input under test, V IN = 0.0 VFor all other inputs, V IN = V CC or GND3.6 V 5.5 V 1, 2, 3 -1.0 AThree-state outputleakage current high, An3021I OZH5 /V OUT = 3.6

46、 VT/R = 0.0 V3.6 V 5.5 V 1, 2, 3 +5.0 AThree-state outputleakage current high, Bn3021I OZH5 /V OUT = 5.5 VT/R = 3.6 V3.6 V 5.5 V 1, 2, 3 +5.0 ASee footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGS

47、IZEA 5962-98605DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 7DSCC FORM 2234APR 97Table I. Electrical performance characteristics Continued.Test andMIL-STD-883test method 1 /Symbol Test conditions 2 /-55 C T C +125 C+2.7 V V CCA +3.6 VV CCA V CCB Group AsubgroupsLimits

48、 3 / Unit+4.5 V V CCB +5.5 Vunless otherwise specifiedMin MaxThree-state outputleakage current low, An3020I OZL5 /V OUT = GNDT/R = 0.0 V3.6 V 5.5 V 1, 2, 3 -5.0 AThree-state outputleakage current low, Bn3020I OZL5 /V OUT = GNDT/R = 3.6 V3.6 V 5.5 V 1, 2, 3 -5.0 AQuiescent supply Current, Bn to An3005I CCA For all inputs, V IN = V CC or GNDI OUT = 0.0 AT/R = 0.0 V3.6 V 5.5 V 1, 2, 3 10.0 AQuiescent supply Current, An to Bn3005I CCB For all inputs, V IN = V CC or GNDI OUT = 0.0 AT/R = 3.6 V3.6 V 5.5 V 1, 2, 3 40.0 AQuiescent supply current d