DLA SMD-5962-97640 REV B-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS 8-INPUT MULTIPLEXER MONOLITHIC SILICON《微型电路 数字型 辐射加固改进的CMOS 8输入多路复用器 单块硅》.pdf

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1、NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)99-04-05Form ApprovedOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching exi

2、sting data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washi

3、ngton Headquarters Services, Directoratefor Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to theOffice of Management and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EIT

4、HER OF THESE ADDRESSED. RETURN COMPLETEDFORM TO THE GOVERNMENT ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITYNUMBER LISTED IN ITEM 2 OF THIS FORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center, Columbus3990 East Broad S

5、treetColumbus, OH 43216-50005. CAGE CODE672686. NOR NO.5962-R050-99a. TYPED NAME (First, Middle Initial,Last)7. CAGE CODE672688. DOCUMENT NO.5962-976409. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS,8-INPUT MULTIPLEXER, MONOLITHIC SILICON10. REVISION LETTER11. ECP NO.No

6、users listed.a. CURRENTAb. NEWB12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1: Revisions ltr column; add “B“.Revisions description column; add “Changes in accordance with NOR 5962-R050-99“.Revisions date column; add “99-04-05“.Revision level block; chang

7、e from “A“ to “B”.Rev status of sheets; for sheets 1, 4 and 17 through 23, add “B“.Sheet 4: Add new paragraph which states; “3.1.1 Microcircuit die . For the requirements for microcircuit die, see appendix A tothis document.“Revision level block; add “B“.Sheets 17 through 23: Add attached appendix A

8、.CONTINUED ON NEXT SHEETS14. THIS SECTION FOR GOVERNMENT USE ONLYa. (X one) X (1) Existing document supplemented by the NOR may be used in manufacture.(2) Revised document must be received before manufacturer ma y incorporate this change.(3) Custodian of master document shall make above revision and

9、 furnish revised document.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FORGOVERNMENTDSCC -VACc. TYPED NAME (First, Middle Initial, Last)MONICA L. POELKINGd. TITLECHIEF, CUSTOM MICROELECTRONICS TEAMe. SIGNATUREMONICA L. POELKINGf. DATE SIGNED(YYMMDD)99-04-0515a. ACTIVITY ACCOMPLISHING REVISIONDSCC -VACb.

10、 REVISION COMPLETED (Signature)JOSEPH A. KERBYc. DATE SIGNED(YYMMDD)99-04-05DD Form 1695, APR 92 Previous editions are obsolete.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-97640DEFENSE SUPPLY CENTER COLUMBUS

11、COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 17DSCC FORM 2234APR 97Document No: 5962-97640Revision: BAPPENDIX A NOR No: 5962-R050-99APPENDIX A FORMS A PART OF SMD 5962-97640 Sheet: 2 of 8 10. SCOPE10.1 Scope . This appendix establishes minimum requirements for microcircuit die to be supplied und

12、er the QualifiedManufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturersapproved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devicesusing chip and wire designs in accordance with

13、MIL-PRF-38534 are specified herein. Two product assurance classesconsisting of military high reliability (device class Q) and space application (device Class V) are reflected in the Part orIdentification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflecte

14、d in the PIN.10.2 PIN . The PIN shall be as shown in the following example:5962 F 97640 01 V 9 AFederal RHA Device Device Die DieStock class designator type class code Detailsdesignator (see 10.2.1) (see 10.2.2) designator (see 10.2.4)(see 10.2.3) Drawing Number 10.2.1 RHA designator . Device classe

15、s Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. Adash (-) indicates a non-RHA die.10.2.2 Device type(s) . The device type(s) shall identify the circuit function as follows:Device type Generic number Circuit function01 ACS151 Radiation Hardened, SOS, advanced CMOS,8-in

16、put multiplexer.10.2.3 Device class designator .Device class Device requirements documentationQ or V Certification and qualification to the die requirements of MI L-PRF-38535.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWIN

17、GSIZEA 5962-97640DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 18DSCC FORM 2234APR 97Document No: 5962-97640Revision: BAPPENDIX A NOR No: 5962-R050-99APPENDIX A FORMS A PART OF SMD 5962-97640 Sheet: 3 of 8 10.2.4 Die Details . The die details designation shall be a u

18、nique letter which designates the dies physical dimensions,bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for eachproduct and variant supplied to this appendix.10.2.4.1 Die Physical dimensions .Die Type Figure number01 A-110.2

19、.4.2 Die Bonding pad locations and Electrical functions .Die Type Figure number01 A-110.2.4.3 Interface Materials .Die Type Figure number01 A-110.2.4.4 Assembly related information .Die Type Figure number01 A-110.3 Absolute maximum ratings . See paragraph 1.3 within the body of this drawing for deta

20、ils.10.4 Recommended operating conditions . See paragraph 1.4 within the body of this drawing for details.20. APPLICABLE DOCUMENTS20.1 Government specifications, standards, bulletin, and handbooks . Unless otherwise specified, the followingspecifications, standards, bulletin, and handbook of the iss

21、ue listed in that issue of the Department of Defense Index ofSpecifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT D

22、RAWINGSIZEA 5962-97640DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 19DSCC FORM 2234APR 97Document No: 5962-97640Revision: BAPPENDIX A NOR No: 5962-R050-99APPENDIX A FORMS A PART OF SMD 5962-97640 Sheet: 4 of 8 SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integr

23、ated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Methods and Procedures for Microelectronics.HANDBOOKDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standardized Military Drawings (SMDs).(Copies of the specification, standards, bulletin, and handbo

24、ok required by manufacturers in connection with specificacquisition functions should be obtained from the contracting activity or as directed by the contracting activity).20.2 Order of precedence . In the event of a conflict between the text of this drawing and the references cited herein, thetext o

25、f this drawing shall take precedence.30. REQUIREMENTS30.1 Item Requirements . The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the Q

26、M plan shall not effect the form, fit or function as described herein.30.2 Design, construction and physical dimensions . The design, construction and physical dimensions shall be asspecified in MIL-PRF-38535 and the manufacturers QM plan, for device classes Q and V and herein.30.2.1 Die Physical di

27、mensions . The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1.30.2.2 Die bonding pad locations and electrical functions . The die bonding pad locations and electrical functions shall beas specified in 10.2.4.2 and on figure A-1.30.2.3 Interface materials . The interface

28、materials for the die shall be as specified in 10.2.4.3 and on figure A-1.30.2.4 Assembly related information . The assembly related information shall be as specified in 10.2.4.4 and figure A-1.30.2.5 Truth table . The truth table shall be as defined within paragraph 3.2.3 of the body of this docume

29、nt.30.2.6 Radiation exposure circuit . The radiation exposure circuit shall be as defined within paragraph 3.2.6 of the body ofthis document.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-97640DEFENSE SUPPLY CE

30、NTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 20DSCC FORM 2234APR 97Document No: 5962-97640Revision: BAPPENDIX A NOR No: 5962-R050-99APPENDIX A FORMS A PART OF SMD 5962-97640 Sheet: 5 of 8 30.3 Electrical performance characteristics and post- irradiation parameter limits . Unless oth

31、erwise specified herein, theelectrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of thisdocument.30.4 Electrical test requirements . The wafer probe test requirements shall include functional and parametric testingsufficient to make the

32、 packaged die capable of meeting the electrical performance requirements in table I.30.5 Marking . As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to acustomer, shall be identified with the wafer lot number, the certification mark, the manufacturers

33、 identification and the PINlisted in 10.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.30.6 Certification of compliance . For device classes Q and V, a certificate of compliance shall be required from aQML-38535 listed manufacturer in order to supply to the req

34、uirements of this drawing (see 60.4 herein). The certificate ofcompliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that themanufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herei

35、n.30.7 Certificate of conformance . A certificate of conformance as required for device classes Q and V in MIL-PRF-38535shall be provided with each lot of microcircuit die delivered to this drawing.40. QUALITY ASSURANCE PROVISIONS40.1 Sampling and inspection . For device classes Q and V, die samplin

36、g and inspection procedures shall be inaccordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. Themodifications in the QM plan shall not effect the form, fit or function as described herein.40.2 Screening . For device classes Q and V, screening shall be

37、 in accordance with MIL-PRF-38535, and as defined in themanufacturers QM plan. As a minimum it shall consist of:a) Wafer Lot acceptance for Class V product using the criter ia defined within MIL-STD-883 TM 5007.b) 100% wafer probe (see paragraph 30.4).c) 100% internal visual inspection to the applic

38、able class Q or V criteria defined within MIL-STD-883 TM2010or the alternate procedures allowed within MIL-STD-883 TM5004.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-97640DEFENSE SUPPLY CENTER COLUMBUSCOLUMB

39、US, OHIO 43216-5000 REVISION LEVEL B SHEET 21DSCC FORM 2234APR 97Document No: 5962-97640Revision: BAPPENDIX A NOR No: 5962-R050-99APPENDIX A FORMS A PART OF SMD 5962-97640 Sheet: 6 of 8 40.3 Conformance inspection .40.3.1 Group E inspection . Group E inspection is required only for parts intended to

40、 be identified as radiation assured (see30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing ofpackaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs4.4.4.1, 4.4.4.1.1

41、, 4.4.4.2, 4.4.4.3 and 4.4.4.4.50. DIE CARRIER50.1 Die carrier requirements . The requirements for the die carrier shall be in accordance with the manufacturers QM planor as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanicaland elec

42、trostatic protection.60. NOTES60.1 Intended use . Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance withMIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications andlogistics purposes.60.2 Com

43、ments . Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone(614)-692-0674.60.3 Abbreviations, symbols and definitions . The abbreviations, symbols, and definitions used herein are defined withMIL-PRF-38535 and MIL-HDBK-1331.60.4 Sources of Supply for devi

44、ce classes Q and V . Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA andhave agreed to this drawing.Provided by IHSNot for ResaleNo reproduction or networking permitted w

45、ithout license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-97640DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 22DSCC FORM 2234APR 97Document No: 5962-97640Revision: BAPPENDIX A NOR No: 5962-R050-99APPENDIX A FORMS A PART OF SMD 5962-97640 Sheet: 7 of 8 FIGURE

46、 A-1o DIE PHYSICAL DIMENSIONSDie Size: 2390 x 2390 microns.Die Thickness: 21 +/-2 mils.o DIE BONDING PAD LOCATIONS AND ELECTRICAL FUNCTIONSThe following metallization diagram supplies the locations and electrical functions of the bonding pads. The internalmetallization layout and alphanumeric inform

47、ation contained within this diagram may or may not represent the actual circuitdefined by this SMD.NOTE: Pad numbers reflect terminal numbers when placed in Case Outlines E, X (see Figure 1).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMIC

48、ROCIRCUIT DRAWINGSIZEA 5962-97640DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 23DSCC FORM 2234APR 97Document No: 5962-97640Revision: BAPPENDIX A NOR No: 5962-R 050-99APPENDIX A FORMS A PART OF SMD 5962-97640 Sheet: 8 of 8 o INTERFACE MATERIALSMetal 1: AlSi 7.0kA +/- 1.0kAMetal 2 (Top) : AlSi 10.0kA +/- 1.0kABackside Metallization NoneGlassivationType: PSGThickness 13.0kA +/ - 1.5kASubstrate: Silicon on Sapphire (SOS)o ASSEMBLY RELATED INFORMATIONSubstrate Potential: Insulator.Special assemblyinstructions: Bond pad #16 (V CC ) first.Provided by