DLA SMD-5962-96877 REV C-2006 MICROCIRCUIT MEMORY DIGITAL RADIATION-HARDENED CMOS 128K X 8 STATIC RAM MONOLITHIC SILICON《互补金属氧化物半导体 128K X 8静态随机存储器 硅单片电路数字记忆微电路》.pdf

《DLA SMD-5962-96877 REV C-2006 MICROCIRCUIT MEMORY DIGITAL RADIATION-HARDENED CMOS 128K X 8 STATIC RAM MONOLITHIC SILICON《互补金属氧化物半导体 128K X 8静态随机存储器 硅单片电路数字记忆微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96877 REV C-2006 MICROCIRCUIT MEMORY DIGITAL RADIATION-HARDENED CMOS 128K X 8 STATIC RAM MONOLITHIC SILICON《互补金属氧化物半导体 128K X 8静态随机存储器 硅单片电路数字记忆微电路》.pdf（27页珍藏版）》请在麦多课文档分享上搜索。

1、 DSCC FORM 2233 APR 97 5962-E240-06 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added device types 02-06 and case outline “Y“ . Dimensional changes to case outline “X“. Changes to CINand COUT. glg 98-03-16 Raymond Monnin B Changes in accordance with NOR 5962-R094-98. glg 98-04-20 Raymond Mo

2、nnin C Boilerplate update and part of five year review. tcr 06-02-23 Raymond Monnin REV SHET REV C C C C C C C C C C C C SHEET 15 16 17 18 19 20 21 22 23 24 25 26 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Jeff Bowling DEFENSE SUP

3、PLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Ray Monnin AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96 09 - 06 MICROCIRCUIT, MEMORY, DIGI

4、TAL, RADIATION-HARDENED, CMOS, 128K X 8 STATIC RAM, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96877 SHEET 1 OF 26 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96877 DEFENSE S

5、UPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and l

6、ead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96877 01 Q X X Federal RHA Device Device Case Lead stock

7、 class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designa

8、tor. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 1/ C

9、ircuit function Input/output levels Access time 01 1M8CRH 128K X 8 Rad-Hard CMOS SRAM CMOS 40 ns 02 1M8TRH 128K X 8 Rad-Hard CMOS SRAM TTL 40 ns 03 1M8CRH 128K X 8 Rad-Hard CMOS SRAM CMOS 30 ns 04 1M8TRH 128K X 8 Rad-Hard CMOS SRAM TTL 30 ns 05 1M8CRH 128K X 8 Rad-Hard CMOS SRAM CMOS 25 ns 06 1M8TRH

10、 128K X 8 Rad-Hard CMOS SRAM TTL 25 ns 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN c

11、lass level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 40

12、 Flat pack Y See figure 1 32 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this docume

13、nt and will also be listed in QML-38535 and MIL-HDBK-103. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96877 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234

14、 APR 97 1.3 Absolute maximum ratings. 2/ 3/ Supply voltage range (VDD) . -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VDD+ 0.5 V 4/ DC output voltage range(VOUT) -0.5 V dc to VDD+ 0.5 V 4/ Storage temperature range . -65C to +150C Case operating temperature range -55C to +125C Le

15、ad temperature (soldering 5 seconds). +250C Thermal resistance, junction-to-case (JC). 3.5C/W Maximum power dissipation 2.0 W Maximum junction temperature . +150C 1.4 Recommended operating conditions. 4/ Supply voltage range (VDD) . -0.5 V dc to +7.0 V dc Supply voltage reference (GND) . 0.0 V High

16、level input voltage range (VIH): Device type 01, 03, 05. 3.5 V dc to VDDDevice type 02, 04, 06. 2.0 V dc to VDDLow level input voltage range (VIL): Device type 01, 03, 05. 0.0 V dc to 1.5 V dc Device type 02, 04, 06. 0.0 V dc to 0.8 V dc Case operating temperature range -55C to +125C 1.5 Digital log

17、ic testing for device classes Q and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, method 5012)100 percent 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to th

18、e extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test

19、Method Standard Microcircuits. MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs). MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assis

20、t.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. 3/ All voltage are referenced to GND. 4/ Ma

21、ximum applied voltage shall not exceed +7.0 V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96877 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2.2

22、 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-

23、00 - Standard Guide for the Measurement of Single Event Phenomena Induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.

24、org.) ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD 78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are

25、 normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, t

26、he text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PR

27、F-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, app

28、endix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device clas

29、s M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 3. 3.2.4 Output load circuit. The ou

30、tput load circuit shall be as specified on figure 4. 3.2.5 Timing waveforms. The timing waveforms shall be as specified on figure 5. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 6. 3.2.7 Functional tests. Various functional tests used to test this

31、device are contained in the appendix. If the test patterns cannot be implemented due to test equipment limitations, alternate test patterns to accomplish the same results shall be allowed. For device class M, alternate test patterns shall be maintained under document revision level control by the ma

32、nufacturer and shall be made available to the preparing or acquiring activity upon request. For device classes Q and V alternate test patterns shall be under the control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the prep

33、aring or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full cas

34、e operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96877 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.4 Electrical test

35、 requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages

36、where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with M

37、IL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as requir

38、ed in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance sh

39、all be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for de

40、vice classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38

41、535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affe

42、cts this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of th

43、e reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 41 (see MIL-PRF-38535, appendix A). 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shal

44、l be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-3

45、8535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883,

46、and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in) electrical parameters of method 5004 and substitute lines 1 throug

47、h 6 of table IIA herein. b. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable

48、, in accordance with the intent specified in method 1015. (1) Dynamic burn-in (method 1015 of MIL-STD-883, test condition D; for circuit, see 4.2.1b herein). c. Interim and final electrical parameters shall be as specified in table IIA herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96877 DEFENSE SUPPLY CENTER COLUMBUS COL