DLA SMD-5962-96869 REV C-2008 MICROCIRCUIT DIGITAL ADVANCED HIGHSPEED CMOS QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf
《DLA SMD-5962-96869 REV C-2008 MICROCIRCUIT DIGITAL ADVANCED HIGHSPEED CMOS QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-96869 REV C-2008 MICROCIRCUIT DIGITAL ADVANCED HIGHSPEED CMOS QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf(17页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change in accordance with the notice of revision 5962-R352-97. - jak 97-06-27 Monica L. Poelking B Change in accordance with the notice of revision 5962-R450-97. - cfs 97-09-03 Monica L. Poelking C Redrawn with changes. Update the boilerplate to
2、current requirements as specified in MIL-PRF-38535. - jak 08-11-05 Thomas M. Hess REV SHET REV C C SHET 15 16 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen DEFE
3、NSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-09-09 MICROCIRCUIT, DIGITAL, ADVANCED HIGH-SPEED CMOS, QUADRUPLE BUS BUFF
4、ER GATE WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96869 SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E034-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIR
5、CUIT DRAWING SIZE A 5962-96869 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device c
6、lass V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 96869 01 Q C A Fe
7、deral stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are ma
8、rked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as fol
9、lows: Device type Generic number Circuit function 01 54AHCT125 Quadruple bus buffer gate with three-state outputs, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements
10、documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-18
11、35 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V o
12、r MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96869 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.
13、3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) . -0.5 V dc to +7.0 V dc DC input voltage range (VIN) . -0.5 V dc to +7.0 V dc 4/ DC output voltage range (VOUT) -0.5 V dc to +7.0 V dc 4/ DC input clamp current (IIK) (VINVCC) 20 mA Continuous output current (IO) (VOUT= 0 V to VCC) . 2
14、5 mA Continuous current through VCCor GND 50 mA Maximum power dissipation at TA= +55C (instill air) (PD) . 500 mW Storage temperature range (TSTG) -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) . +17
15、5C 1.4 Recommended operating conditions. 2/ 3/ 5/ Supply voltage range (VCC) . +4.5 V dc to +5.5 V dc Minimum high level input voltage (VIH) +2.0 V Maximum low level input voltage (VIL). +0.8 V Input voltage range (VIN) . +0.0 V dc to +5.5 V dc Output voltage range (VOUT) +0.0 V dc to VCCMaximum hig
16、h level output current (IOH) . -8 mA Maximum low level output current (IOL) . +8 mA Minimum input rise or fall rate (t/V). 20 ns/V Case operating temperature range (TC) -55C to +125C 1/ Stresses above the absolute maximum rating may cause permanent damage to the device, Extended operation at the max
17、imum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ The input and output voltage ratin
18、gs may be exceeded providing that the input and output current ratings are observed. 5/ Unused inputs must be held high or low to prevent them from floating. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96
19、869 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein
20、. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcirc
21、uits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/
22、or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, h
23、owever, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufact
24、urers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.
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