DLA SMD-5962-96767 REV D-2009 MICROCIRCUIT LINEAR RADIATION HARDENED HIGH SPEED LOW POWER CURRENT FEEDBACK AMPLIFIER WITH PROGRAMMABLE OUTPUT LIMITING MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make change to 1.2.4 and power dissipation as specified under 1.3. - ro 99-06-09 R. MONNIN B Add appendix A. - ro 01-09-10 R. MONNIN C Add dose rate footnote under paragraph 1.5 and table I. Delete Neutron testing and Dose rate induced latchup te

2、sting. - ro 05-11-02 R. MONNIN D Add case outline X. Make changes to 1.2.4, 1.3 and figure 1. -rrp 09-03-09 R. HEBER REV SHET REV D D D D D SHEET 15 16 17 18 19 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPL

3、Y CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL FRYE AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-02-21 MICROCIRCUIT, LINEAR, RAD

4、IATION HARDENED, HIGH SPEED, LOW POWER, CURRENT FEEDBACK AMPLIFIER WITH PROGRAMMABLE OUTPUT LIMITING, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96767 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E189-09 Provided by IHSNot for ResaleNo reproduction or networking permitted w

5、ithout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96767 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device cla

6、sses Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in th

7、e following example: 5962 F 96767 01 V P C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the

8、MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device

9、 type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS1135RH Radiation hardened D.I., high speed, low power, current feedback amplifier with programmable output limiting 1.2.3 Device class designator. The device class designator is a single letter identi

10、fying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-3

11、8535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDFP3-F14 14 Flat pack P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for devic

12、e classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96767 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC

13、FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Voltage between +VSand VS. 12 V dc Differential input voltage 5 V dc Voltage at either input terminal . +VSto VSOutput current . Short circuit protected 2/ Output current (50% duty cycle) 60 mA 2/ Maximum package power dissipation at TA= +125C (PD):

14、Case X . 0.45 W 3/ Case P . 0.44 W 3/ Junction temperature (TJ) . +175C Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC): Case X . 25C/W Case P . 30C/W Thermal resistance, junction-to-ambient (JA) 115C/W Case X

15、. 110C/W Case P . 115C/W 1.4 Recommended operating conditions. Operating supply voltage (VS) . 5 V Load resistance (RL) . 50 Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s) 300 Krads (Si) 4/ 2. APPLICABLE D

16、OCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF

17、DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. _ 1/ Stresses above the absolute maximum rating

18、 may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Output is short circuit protected to ground. Brief short circuits to ground will not degrade reliability, however continuous (100% duty cycle) output current must no

19、t exceed 30 mA for maximum reliability. 3/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate of 8.7 mW/C for case outline P, or 9.1 mWC for case outline X. 4/ These parts may be dose rate sensitive in a

20、 space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license f

21、rom IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96767 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (C

22、opies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the referen

23、ces cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in acc

24、ordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with

25、 MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as sp

26、ecified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radi

27、ation exposure circuit. The radiation exposure circuit shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specifi

28、ed in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with

29、 the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA

30、 designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ o

31、r “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the

32、requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an a

33、pproved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conf

34、ormance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MI

35、CROCIRCUIT DRAWING SIZE A 5962-96767 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C VS= 5 V Group A subgroups Device type Limits Unit unless otherwise spe

36、cified Min Max Input offset voltage VIOVCM= 0 V 1 All -5 5 mV 2,3 -10 10 M,D,P,L,R,F 2/ 3/ 1 -10 10 Common mode rejection CMRR VCM= 1.8 V, 1 All 47 dB ratio +V = 3.2 V, -V = -6.8 V, +V = 6.8 V, -V = -3.2 V 2 44 VCM= 1.2 V, +V = 3.8 V, -V = -6.2 V, +V = 6.2 V, -V = -3.8 V 3 44 M,D,P,L,R,F 2/ 3/ 1 44

37、Power supply rejection PSRRP VS= 1.8 V, 1 All 50 dB ratio +V = 6.8 V, -V = -5 V, +V = 3.2 V, -V = -5 V 2 46 VS= 1.2 V, +V = 6.2 V, -V = -5 V, +V = 3.8 V, -V = -5 V 3 46 M,D,P,L,R,F 2/ 3/ 1 46 PSRRN VS= 1.8 V, 1 50 +V = 5 V, -V = -6.8 V, +V = 5 V, -V = -3.2 V 2 46 VS= 1.2 V, +V = 5 V, -V = -6.2, +V =

38、 5 V, -V = -3.8 V 3 46 M,D,P,L,R,F 2/ 3/ 1 46 Non-inverting input IBSPVCM= 0 V 1 All -15 15 A (+IN) current 2,3 -25 25 M,D,P,L,R,F 2/ 3/ 1 -25 25 +IN current common CMSIBPVCM= 1.8 V, 1 All 1.25 A/V mode sensitivity +V = 3.2 V, -V = -6.8 V, +V = 6.8 V, -V = -3.2 V 2 2.85 VCM= 1.2 V, +V = 3.8 V, -V =

39、-6.2, +V = 6.2 V, -V = -3.8 V 3 2.85 M,D,P,L,R,F 2/ 3/ 1 2.85 +IN resistance +RIN4/ 1 All 800 k 2,3 350 M,D,P,L,R,F 2/ 3/ 1 350 See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96

40、767 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C VS= 5 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max +IN curr

41、ent power supply PPSSIBPVS= 1.8 V, 1 All 1 A/V sensitivity +V = 6.8 V, -V = -5 V, +V = 3.2 V, -V = -5 V 2 3 VS= 1.2 V, +V = 6.2 V, -V = -5 V, +V = 3.8 V, -V = -5 V 3 3 M,D,P,L,R,F 2/ 3/ 1 3 NPSSIBPVS= 1.8 V, 1 1 +V = 5 V, -V = -6.8 V, +V = 5 V, -V = -3.2 V 2 3 VS= 1.2 V, +V = 5 V, -V = -6.2 V, +V =

42、5 V, -V = -3.8 V 3 3 M,D,P,L,R,F 2/ 3/ 1 3 Inverting input (-IN) IBSNVCM= 0 V 1 All -7.5 7.5 A current 2,3 -25 25 M,D,P,L,R,F 2/ 3/ 1 -25 25 -IN current common CMSIBNVCM= 1.8 V, 1 All 6 A/V mode sensitivity +V = 3.2 V, -V = -6.8 V, +V = 6.8 V, -V = -3.2 V 2 8 VCM= 1.2 V, +V = 3.8 V, -V = -6.2 V, +V

43、= 6.2 V, -V = -3.8 V 3 8 M,D,P,L,R,F 2/ 3/ 1 8 -IN current power supply PPSSIBNVS= 1.8 V, 1 All 5 A/V sensitivity +V = 6.8 V, -V = -5 V, +V = 3.2 V, -V = -5 V 2 8 VS= 1.2 V, +V = 6.2 V, -V = -5 V, +V = 3.8 V, -V = -5 V 3 8 M,D,P,L,R,F 2/ 3/ 1 8 NPSSIBNVS= 1.8 V, 1 5 +V = 5 V, -V = -6.8 V, +V = 5 V,

44、-V = -3.2 V 2 8 VS= 1.2 V, +V = 5 V, -V = -6.2 V, +V = 5 V, -V = -3.8 V 3 8 M,D,P,L,R,F 2/ 3/ 1 8 See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96767 DEFENSE SUPPLY CENTER COLU

45、MBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C VS= 5 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Output voltage swing VOP100VIN= -3.2 V

46、, AV= -1, RL= 100 1 All 3 V VIN= -3 V, AV= -1, RL= 100 2,3 2.8 VIN= -3 V, AV= -1, 2/ 3/ RL= 100 , M,D,P,L,R,F 1 2.8 VON100VIN= +3.2 V, AV= -1, RL= 100 1 -3 VIN= +3 V, AV= -1, RL= 100 2,3 -2.8 VIN= +3 V, AV= -1, 2/ 3/ RL= 100 , M,D,P,L,R,F 1 -2.8 VOP50VIN= -2.7 V, AV= -1, RL= 50 1 2.5 VIN= -2.25 V, A

47、V= -1, RL= 50 2 2.0 VIN= -2.25 V, AV= -1, RL= 50 3 1.4 VIN= -2.25 V, 2/ 3/ AV= -1, RL= 50 , M,D,P,L,R,F 1 1.4 VON50VIN= +2.7 V, AV= -1, RL= 50 1 -2.5 VIN= +2.25 V, AV= -1, RL= 50 2 -2.0 VIN= +2.25 V, AV= -1, RL= 50 3 -1.4 VIN= +2.25 V, 2/ 3/ AV= -1, RL= 50 , M,D,P,L,R,F 1 -1.4 See footnotes at end o

48、f table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96767 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C VS= 5 V Group A subgroups Device type Limits Unit un