DLA SMD-5962-96544 REV F-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED 3-LINE TO 8-LINE DECODER DEMULTIPLEXER MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R122-97. 96-12-10 Monica L. Poelking B Incorporate revision A. Update boilerplate to MIL-PRF-38535 requirements. LTG 01-10-02 Thomas M. Hess C Add appendix A. Editorial changes throughout. LTG 04-10-19 Thomas M

2、. Hess D Correct title. Add device types 02 and 03. Update radiation hardness assurance paragraphs. Add table IB. - jak 10-11-19 Muhammad A. Akbar E Add equivalent test circuit and footnote 5 in figure 4. - MAA 12-05-10 Thomas M. Hess F To correct switching waveforms input/output test limits to figu

3、re 4. Add test equivalent circuits and footnote 4 to figure 4. Delete class M requirements throughout.- MAA 12-12-10 Thomas M. Hess REV SHEET REV F F F F F F F F F SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PR

4、EPARED BY Thanh V. Nguyen DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A APPROVED BY Monica L. Poelking

5、MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 3-LINE TO 8-LINE DECODER/DEMULTIPLEXER, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-04-12 REVISION LEVEL F SIZE A CAGE CODE 67268 5962-96544 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E082-13 Provided by IHSNot for ResaleNo reproduction or netw

6、orking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96544 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (d

7、evice class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in

8、the following example: 5962 H 96544 01 V X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet

9、the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACS138 Radiation hardened, 3-line to 8

10、-line decoder/demultiplexer 02 54ACS138E Enhanced, radiation hardened, 3-line to 8-line decoder/demultiplexer 03 54ACS138E Enhanced, radiation hardened, 3-line to 8-line decoder/demultiplexer 1.2.3 Device class designator. The device class designator is a single letter identifying the product assura

11、nce level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16

12、 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. . Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96544 DLA LAND AND M

13、ARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD+ 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input curre

14、nt, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC): Case outline E and X, device type 01 See MIL-STD-1835 Case outline X, device types 02 and 03

15、 . 15.0C/W Junction temperature (TJ) +175C Maximum package power dissipation (PD): Device type 01 . 1.0 W Device types 02 and 03 . 3.3 W 4/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD): Device type 01 . +4.5 V dc to +5.5 V dc Device types 02 and 03 . +3.0 V dc to +5.5 V dc

16、Input voltage range (VIN) +0.0 V dc to VDDOutput voltage range (VOUT). +0.0 V dc to VDDCase operating temperature range (TC) . -55C to +125C Maximum input rise and fall time at VDD= 4.5 V (tr, tf) . 1 ns/V 5/ 1.5 Radiation features. 6/ Maximum total dose available: Device type 01 (dose rate = 50 300

17、 rads (Si)/s) 1 x 106Rads (Si) 7/ Device type 02 (effective dose rate = 1 rad (Si)/s) . 1 x 106Rads (Si) 8/ Device type 03 (dose rate = 50 300 rads (Si)/s) 5 x 105Rads (Si) 7/ Single event phenomenon (SEP) effective: Device type 01: Effective LET, no upsets (see 4.4.4.4) 80 MeV-cm2/mg 9/ Effective L

18、ET, no latch-up (see 4.4.4.4) 120 MeV-cm2/mg 9/ Device types 02 and 03: Effective LET, no upsets (see 4.4.4.4) 108 MeV-cm2/mg 9/ Effective LET, no latch-up (see 4.4.4.4) 120 MeV-cm2/mg 9/ Dose rate upset (20 ns pulse) 1 x 109 Rads (Si)/s 9/ 10/ Dose rate latch-up . None 9/ Dose rate survivability .

19、1 x 1012 Rads (Si)/s 9/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS.3/ The limits for the parameters

20、specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Per MIL-STD-883 method 1012.1 section 3.4.1, PD(Package) = (TJ (max) - TC(max). JC5/ Derate system propagation delays by difference in rise time to switch point fo

21、r tror tf 1 ns/V. 6/ Radiation testing is performed on the standard evaluation circuit (SEC). 7/ Device types 01 and 03 are tested in accordance with MIL-STD-1019, condition A. 8/ Device type 02 is irradiated at dose rate = 50 - 300 rads (Si)/s in accordance with MIL-STD-883, method 1019, condition

22、A, and is guaranteed to a maximum total dose specified. The effective dose rate after extended room temperature anneal = 1 rad (Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for these devices only applies to a low dose rate environment. 9/ Limits are g

23、uaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. 10/ This limit is applicable for device type 01, 02, and 03 with VDD 4.5 V. Device types 02 and 03 do not meet this limit at VDD 4.5 VProvided by IHSNot for ResaleNo rep

24、roduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96544 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following

25、specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, Gener

26、al Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Dr

27、awings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the

28、 extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semic

29、onductor Devices. (Copies of this document is available online at https:/www.astm.org/ or from ASTM International, P. O. Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959). JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JESD 20 - Standard for Description of 54/74ACXXXX and 54/74ACT

30、XXXX Advanced High-Speed CMOS Devices. (Copies of these documents are available online at http:/www.jedec.org/ or from JEDEC Solid State Technology Association, 3103 North 10th Street, Suite 240S, Arlington, VA 22201-2701.) 2.2 Order of precedence. In the event of a conflict between the text of this

31、 drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

32、IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96544 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as s

33、pecified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, con

34、struction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections sh

35、all be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuits. The switching waveforms and test circuits shall be as specified on figure 4. 3

36、.2.6 Irradiation test connections. The irradiation test connections shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter

37、 limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the sub

38、groups specified in table IIA. The electrical tests for each subgroup are described in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due

39、 to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certifi

40、cation mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a

41、 QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for devi

42、ce classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this

43、 drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96544 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics.

44、 Test Symbol Test conditions 1/ 2/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 3/ Unit Min Max High level input voltage VIH02, 03 3.0 V and 3.6 V 1, 2, 3 0.7 VDDV All 4.5 V and 5.5 V 1, 2, 3 0.7 VDDV Low level input voltage VIL02, 03 3.0 V and 3.6 V 1, 2, 3 0.3 V

45、DDV All 4.5 V and 5.5 V 1, 2, 3 0.3 VDDV High level output voltage VOHFor all inputs affecting output under test, VIN= VDDor VSSIOH= -100.0 A 02, 03 3.0 V and 3.6 V 1, 2, 3 VDD-0.25 V All 4.5 V and 5.5 V 1, 2, 3 VDD-0.25 V Low level output voltage VOLFor all inputs affecting output under test, VIN=

46、VDDor VSSIOL= +100.0 A 02, 03 3.0 V and 3.6 V 1, 2, 3 0.25 V All 4.5 V and 5.5 V 1, 2, 3 0.25 V Input current high IIHFor input under test, VIN= 5.5 V For all other inputs VIN= VDDor VSSAll 5.5 V 1, 2, 3 -1.0 A Input current low IILFor input under test, VIN= VSSFor all other inputs VIN= VDDor VSSAll

47、 5.5 V 1, 2, 3 +1.0 A Output current (Sink) IOL4/ VIN= VDDor VSS VOL= 0.4 V 02, 03 3.0 V and 3.6 V 1, 2, 3 6.0 mA All 4.5 V and 5.5 V 1, 2, 3 8.0 mA Output current (Source) IOH 4/ VIN= VDDor VSS VOH= VDD-0.4 V 02, 03 3.0 V and 3.6 V 1, 2, 3 -6.0 mA All 4.5 V and 5.5 V 1, 2, 3 -8.0 mA See footnotes a

48、t end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96544 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics Continued. Test Symbol Test conditions 1/ 2/ -55C TC +125C unless otherwise specified De