DLA SMD-5962-96541 REV D-2011 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED DUAL J-K FLIP-FLOP WITH CLEAR AND PRESET TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf
《DLA SMD-5962-96541 REV D-2011 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED DUAL J-K FLIP-FLOP WITH CLEAR AND PRESET TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-96541 REV D-2011 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED DUAL J-K FLIP-FLOP WITH CLEAR AND PRESET TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf(19页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R144-97. 96-12-10 Monica L. Poelking B Incorporate Revision A. Update boilerplate to MIL-PRF-38535 requirements. LTG 01-09-04 Thomas M. Hess C Correct the title to accurately describe the device function. Chang
2、e figure 4, switching waveforms and test circuit. Update boilerplate to the latest MIL-PRF-38535 requirements. - jak 07-11-07 Thomas M Hess D Update radiation features in section 1.5 and SEP test limits in table IB. Correct function of pin 10 in figure 1. Update boilerplate paragraphs as specified i
3、n MIL-PRF-38535 requirements. - MAA 11-04-19 David J. Corbett REV SHET REV D D D D SHEET 15 16 17 18 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh V. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil
4、/ STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, DUAL J-KnullFLIP-FLOP WITH CLEAR AND PRESET, TTL
5、 COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-04-12 REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96541 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E221-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SI
6、ZE A 5962-96541 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of cas
7、e outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example 5962 H 96541 01 V X C Federal stock class designa
8、tor RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate
9、RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic
10、number Circuit function 01 54ACTS109 Radiation hardened, dual J-Knullflip-flop with clear and preset, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation
11、 M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows
12、: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for Res
13、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96541 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V
14、 dc DC input voltage range (VIN) -0.3 V dc to VDD+ 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C T
15、hermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Maximum package power dissipation (PD) . 1.0 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VDDOutput voltage range (VOU
16、T) . +0.0 V dc to VDDCase operating temperature range (TC) . -55C to +125C Maximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V 4/ 1.5 Radiation features. 5/ Maximum total dose available (dose rate = 50 300 rads (Si)/s) 1 X 106rads (Si) Single event phenomenon (SEP): No SEL at an effective
17、LET (see 4.4.4.4) . 80 MeV/(mg/cm2) 6/ No SEU at an effective LET (see 4.4.4.4) 80 MeV/(mg/cm2) 6/ Dose rate upset (20 ns pulse) 1 x 109rads (Si)/s 6/ Dose rate induced Latch-up . None 6/ Dose rate survivability 1 x 1012rads (Si)/s 6/ 1/ Stresses above the absolute maximum rating may cause permanent
18、 damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of
19、-55C to +125C unless otherwise noted. 4/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluation circuit. 6/ Limits are guaranteed by design or process but not production tested unless specified by t
20、he customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96541 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPL
21、ICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPART
22、MENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDB
23、K-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.
24、2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement o
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