DLA SMD-5962-95808 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS SYNCHRONOUS BCD DECADE UP DOWN COUNTER MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体 同步二进制编码的十进制上下计数器 硅单片.pdf
《DLA SMD-5962-95808 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS SYNCHRONOUS BCD DECADE UP DOWN COUNTER MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体 同步二进制编码的十进制上下计数器 硅单片.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-95808 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS SYNCHRONOUS BCD DECADE UP DOWN COUNTER MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体 同步二进制编码的十进制上下计数器 硅单片.pdf(29页珍藏版)》请在麦多课文档分享上搜索。
1、m 9999996 0123466 b8 U fxone) NOTICE OF REVISION (NOR) X (1) Existing document supplemented by the NOR may be used in manufacture. (2) Revised document must be received before manufacturer may incorporate this change. (3) Custodian of master document shall make above revision and furnish revised doc
2、ument. THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. 1. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT DSCC-VAC 1. DATE (YYMMDD) 98-07-31 c. TYPED NAME (First, Midd/e /nitiaA Last) MONICA L. POELKING 4. ORIGINATOR i. TITLE CHIEF, CUSTOM MICROELECTRONICS TEAM a. TYP
3、ED NAME (First, Middie Initia4 Last) e. SIGNATURE f. DATE SIGNED (WMMDD) MONICA L. POELKING 98-07-31 b. ADDRESS (Street, Ci add “A. Revisions description column; add “Changes in accordance with NOR 5962-R149-98. Revisions date column; add “98-07-31“. Revision level block; add “A“. Rev status of shee
4、ts; for sheets 1,4, and 20 through 26, add “A“. this document.“ Revision level block; add “A. Sheets 20 through 26: Add attached appendix A. Sheet 4: Add new paragraph which states; “3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to CONTINUED ON NEXT SHEETS 14. THI
5、S SECTION FOR GOVERNMENT USE ONLY c. DATE SIGNED (YYMMDD) 98-07-31 Licensed by Information Handling ServicesAPPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95808 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 Document No: 5962-95808 Revision: A Sheet: 2 of 8 N
6、OR NO: 5962-R149-98 SIZE 5962-95808 A SHEET REVISION LEVEL A 20 10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers ap
7、proved QM plan for use in monolithic microcircuits, rnultichip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space a
8、pplication (device Class V) are reflected in the Part or Identification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. 10.2 m. The PIN shall be as shown in the following example: 59,62 95808 i f k Federal RHA Device Device Die Die Stock
9、class designator type class code Details designator (see 10.2.1) (see 10.2.2) designator (see 10.2.4) (see 10.2.3) 3 Drawing Number 10.2.1 RHA desianator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. 10.2.2 Device tv
10、Dek.1. The device type(c) shall identify the circuit function as follows: Device tvpe Generic number Circuit function o1 HCS190 Radiation Hardened, SOS, high speed CMOS, synchronous BCD decade upidown counter. Licensed by Information Handling Services999999b OL234bB 451 m APPENDIX A APPENDIX A FORMS
11、 A PART OF SMD 5962-95808 Document No: 5962-95808 Revision: A Sheet: 3 of 8 NOR NO: 59624149-98 10.2. Die Details. The die details designation shall be a unique letter which designates the die?s physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and
12、 other assembly related information, for each product and variant supplied to this appendix. 10.2.4.1 Die Phvsical dimensions. Die TvDes Fiaure number o1 A- 1 10.2.4.2 Die Bondina Dad locations and Electrical functions. Die TvDes o1 10.2.4.3 Interface Materials. Die TvDes o1 10.2.4.4 Assemblv relate
13、d information. o1 Fiaure number A-1 Fiaure number A- 1 A- 1 10.3 Absolute maximum ratinas. See paragraph 1.3 within the body of this drawing for details. 10.4 Recommended operatina conditions. See paragraph 1.4 within the body of this drawing for details. 20. APPLICABLE DOCUMENTS 20.1 Government sDe
14、cifications. standards. bulletin, and handbooks. Unless otherwise specified, the following specifications, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing
15、 to the extent specified herein. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 I 5962-95808 1 REVISION LEVEL SHEET A I 21 I I l SCC FORM 2234 APR 97 Licensed by Information Handling Services9999996 0323469 398 STANDARD MICROCIRCUIT DRAWING COLUMBUS, OHIO 4321
16、6-5000 DEFENSE SUPPLY CENTER COLUMBUS APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95808 SIZE 5962-95808 A REVISION LEVEL SHEET A 22 Document No: 5962-95808 Revision: A Sheet: 4 of 8 NOR NO: 5962-R149-98 SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, Genera
17、l Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Methods and Procedures for Microelectronics. HANDBOOK DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standardized Military Drawings (SMDs). (Copies of the specification, standards, bulletin, and handbook required by manufacturers
18、in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity). text of this drawing shall take precedence. 20.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited h
19、erein, the 30. REQUIREMENTS 30.1 Item Reauirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not effect
20、the form, fit or function as described herein. 30.2 Desian. construction and phvsical dimensions. The design, construction and physical dimensions shall be as 30.2.1 Die Phvsical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1. 30.2.2 Die bondina pad locat
21、ions and electrical functions. The die bonding pad locations and electrical functions shall be 30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1 . 30.2.4 Assemblv related information. The assembly related information shall be as speci
22、fied in 10.2.4.4 and figure A-1 . 30.2.5 Truth table. The truth table shall be as defined within paragraph 3.2.3 of the body of this document. 30.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.6 of the body of specified in MIL-PRF-38535 and th
23、e manufacturers QM plan, for device classes Q and V and herein. as specified in 10.2.4.2 and on figure A-1. this document. ISCC FORM 2234 4PR 97 Licensed by Information Handling Servicesb 0323470 OOT 9 STANDARD MICROCIRCUIT DRAWING COLUMBUS, OHIO 4321 6-5000 DEFENSE SUPPLY CENTER COLUMBUS APPENDIX A
24、 APPENDIX A FORMS A PART OF SMD 5962-95808 SIZE 5962-95808 A REVISION LEVEL SHEET A 23 Document No: 5962-95808 Revision: A Sheet: 5 of 8 NOR NO: 596243149-98 30.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performan
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