DLA SMD-5962-92171-1993 MICROCIRCUIT DIGITAL HCMOS 8-BIT ERROR CORRECTING REED-SOLOMON CODEC MONOLITHIC SILICON《硅单片 8位误差校正所罗门代码编码译码器 HCMOS数字微型电路》.pdf
《DLA SMD-5962-92171-1993 MICROCIRCUIT DIGITAL HCMOS 8-BIT ERROR CORRECTING REED-SOLOMON CODEC MONOLITHIC SILICON《硅单片 8位误差校正所罗门代码编码译码器 HCMOS数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-92171-1993 MICROCIRCUIT DIGITAL HCMOS 8-BIT ERROR CORRECTING REED-SOLOMON CODEC MONOLITHIC SILICON《硅单片 8位误差校正所罗门代码编码译码器 HCMOS数字微型电路》.pdf(16页珍藏版)》请在麦多课文档分享上搜索。
1、LTR DESCRIPTION DATE (YR-MO-DA) REV I I APPROVED SHEET SHEET REV STATUS OF SHEETS SIZE B PMIC N/A 5962-921 71 CAGE CODE 67268 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA SHEET PREPARED BY Thomas M. Hess CHECKED
2、 BY Christopher A. Rauch APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 93-12-22 REVISION LEVEL DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUIT, DIGITAL, HCMOS, 8-BIT ERROR CORRECTING REED-SOLOMON CODEC, MONOLITHIC SILICON SHEET 1 OF 15 5962-E422-93 JUL 91 DISTRIBUTION STATEM
3、ENT A. Approved for public release: distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-W 9999976 0049550 593 = STANDARD1 BED SI BE 5962-92171 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER REVISION LEVEL SHEET DAYTON, OH
4、IO 45444 a 1. SCOPE 1.1 scow. This drawing forms a part of a one part - one part mniber docunentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes P and Ml and space application (device class V), and a choice of case outlines and lead
5、 finishes are available and are reflected in the Part or Identifying Nunber (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STO-883, 8nPrwisions for the use of MIL-STD-883 in conjuiction with capliant non-JAN devicesn1. Uhen available, a ch
6、oice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 m. The PIN shall be as shom in the following exanple: 92 171 - o1 n X X T - I Lead I Case T I Device I Federal RHA Device tnw c 1 ass outline finish IL stock class designator designator (see 1.2.1) (see 1.2.2) designator
7、 (see 1.2.4) (see 1.2.5) L / (see 1.2.3) / Drawing nunber 1.2.1 RHA desianator. Device class H RHA marked devices shall meet the MIL-1-38535 appendix A specified RHA levels and shall be mrked with the appropriate RHA designator. Device classes P and V RHA marked devices shall meet the MIL-1-38535 sp
8、ecified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 pevice tmets). lhe device type) shall identify the circuit function as follows: Device tm Generic mmber Circuit function O1 02 64710-33 64710-25 8-Bit error correcting Reed-Solm e
9、ncoder/decoder 8-Bit error correcting Reed-Solainon encoder/decoder 1.2.3 Device class desianator. The device class designator shall be a single letter identifying the product assurance level as follows: Device class Device reauirements docunentation M Vendor self-certification to the requirements f
10、or non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 a or v Certification and qualification to MIL-1-38535 1.2.4 Case outLineCs). lhe case outline(s shall k as designated in MIL-STD-1835 and as follows: Outline letter pescr i Dt i ve des i gnat or lerminats Packase style X CIIA15
11、-P 68 Pin grid array 1.2.5 Lead finish. The Lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-1-38535 for classes P and V. Finish letter nnX“ shall not be marked on the microcircuit or its packaging. lhe uXnn I designation is for use in specifications hen lead fini
12、shes A, B. and C are considered acceptable and interchangeable Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-9999996 OOY955L 42T = I 1.3 Absolute maximum ratinss. 1/ DC supply voltage (VDD) -0.3 V dc to +7.0 V dc Input voltage (VI ) -0.3 V to VDD +
13、 9.3 V Junction temperature (TJ) . +16OoC Power dissipation (Po) DC input current viIN) *io n Storage temperature range -65C to +150“C Lead temperature (soldering, 10 seconds) Theml resistance, junction-to-case (eJc) 1.4 Recomnended operatinu conditions. . +275C 1.8 W 2“C/W DC supply voltage (Voo) t
14、4.0 V dc to +6.0 V dc Operating anhient temperature range (TA) Input high voltage range (VI ) . -55C to +125“C 2.25 V minimm Input low voltage range (VIL! . 0.8 V maximim 1.5 Diuital lwic testina for device classes O and V. Fault coverage measurement of manufacturing logic tests (MIL-STO-883, test m
15、ethod 5012) XX percent z/ 2. APPLICABLE DOCUMENTS STANDARDIZED HILITARY DRAUING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 2.1 Government specification, standards, bulletin, and handbook. Unless otherwise specified, the following specification, standards, bulletin, and handbook of the issu
16、e listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified SIZE 5962-92171 A REVISION LEVEL SHEET 3 herein. SPEC IF I CATION MILITARY MIL-1-38535 - Integrated Circuits. Manufacturing, Ge
17、neral Specification for. STANDARDS MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STO-973 - Configuration Management. MIL-STO-1835 - Microcircuit Case Outlines. BULLETIN MILITARY MIL-BUL-103 - List of Standardized Military Drawings (SMDIS). HANDBOOK MIL I TARY MIL-HDBK-
18、780 - Standardized Military Drawings. (Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity. ) - I/ Stresses above the abs
19、olute maximum rating may cause permanent damage to the device. maximum levels may degrade performnce and affect reliability. 21 Values will be added when they become available. Extended operation at the DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted withou
20、t license from IHS-,-,-9997976 0049552 366 M Specified in UIL-STO-883 (see 3.1 herein) for device class W and MIL-1-38535 for device classes 9 and V and herein. The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.1 Case outline(s1. 3.2.2 Terminal comections. 3.2.3 B!. The block diagram
21、 shall be as specified on figure 2. 3.2.4 Radiation emsure circuit. 3.3 glectrical mrfomnce characteristics and castirradiation parameter limits. The terminal connections shall be as specified on figure 1. lhe radiation exposure circuit shall be specified when evailable. Unless otherwise specified h
22、erein, the electrical performance characteristics and postirradiation parameter limits are as specified in teble I and shall apply over the full ambient operating tenperature range. 3.1 Electrical test reauirements. The electrical test requirements shall be the subgroups specified in table II. 3.5 M
23、arking. lhe part shall be marked with the PIN listed in 1.2 herein. Marking for device class H shall be in The electrical tests for each subgrq are defined in table I. accordance with MIL-STD-883 (see 3.1 herein). 1n addition, the manufacturers PIN may also be marked as listed in , MIL-BUL-103. Mark
24、ing for device classes Q and V shall be in accordance with MIL-38535. 4.1 SIyiplina and insrjection. For device class M, senpling and inspection procedures shall be in accordance with For device classes Q and U, sampling and inspection procedures shall be in accordance MIL-STD-883 (see 3.1 herein).
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