DLA SMD-5962-91603 REV B-2008 MICROCIRCUIT DIGITAL ADVANCED CMOS 4-STAGE SYNCHRONOUS BIDIRECTIONAL COUNTER MONOLITHIC SILICON《单片硅四态同步双向计数器 改进的CMOS数字微电路》.pdf

《DLA SMD-5962-91603 REV B-2008 MICROCIRCUIT DIGITAL ADVANCED CMOS 4-STAGE SYNCHRONOUS BIDIRECTIONAL COUNTER MONOLITHIC SILICON《单片硅四态同步双向计数器 改进的CMOS数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-91603 REV B-2008 MICROCIRCUIT DIGITAL ADVANCED CMOS 4-STAGE SYNCHRONOUS BIDIRECTIONAL COUNTER MONOLITHIC SILICON《单片硅四态同步双向计数器 改进的CMOS数字微电路》.pdf（20页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device class V criteria. Add RHA data. Editorial changes throughout.- jak 98-02-04 Thomas M. Hess B Update boilerplate to MIL-PRF-38535 requirements. - LTG 08-07-24 Thomas M. Hess REV SHET REV B B B B B SHEET 15 16 17 18 19 REV STATUS REV B B

2、 B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Marcia B. Kelleher CHECKED BY Monica L. Poelking DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Michael A. Frye STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AV

3、AILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 92-04-09 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 4-STAGE SYNCHRONOUS BIDIRECTIONAL COUNTER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-91603 SHEET 1 OF 19 DSCC FORM 2233 APR

4、 97 5962-E468-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91603 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing

5、documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hard

6、ness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 91603 01 V E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / D

7、rawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate

8、RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AC169 4-stage synchronous bidirectional counter 1.2.3 Device class designator. The device class designator is a s

9、ingle letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualifi

10、cation to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CDFP3-F16 16 Flat pack 2 CQCC1-N20 20 Square leadless chip carrie

11、r 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91603 DEFENSE

12、SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +6.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V d

13、c Clamp diode current. 20 mA DC output current (per pin) 50 mA DC VCCor GND current (per pin) . 50 mA Maximum power dissipation (PD) . 500 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds). +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835

14、Junction temperature (TJ) +175C 4/ 1.4 Recommended operating conditions. 2/ 3/ 5/ Supply voltage range (VCC) 3.0 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCCase operating temperature range (TC). -55C to +125C Input rise or fall times: VCC

15、= 3.6 V to 5.5 V . 0 to 8 ns/V Minimum setup time, Pn to CP (ts1): TC= +25C, VCC= 3.0 V. 6.0 ns TC= +25C, VCC= 4.5 V. 3.5 ns TC= -55C and +125C, VCC = 3.0 V. 7.0 ns TC= -55C and +125C, VCC= 4.5 V. 4.5 ns Minimum hold time, Pn to CP (th1): TC= +25C, VCC = 3.0 V 1.0 ns TC= +25C, VCC = 4.5 V 2.5 ns TC=

16、 -55C and +125C, VCC= 3.0 V 2.0 ns TC= -55C and +125C, VCC= 4.5 V 2.5 ns Minimum setup time, CEP to CP (ts2): TC= +25C, VCC = 3.0 V 10.5 ns TC= +25C, VCC = 4.5 V 7.5 ns TC= -55C and +125C, VCC= 3.0 V13.5 ns TC= -55C and +125C, VCC= 4.5 V 9.0 ns Minimum hold time, CEP to CP (th2): TC= +25C, VCC = 3.0

17、 V 0.0 ns TC= +25C, VCC = 4.5 V 1.5 ns TC= -55C and +125C, VCC= 3.0 V 0.5 ns TC= -55C and +125C, VCC= 4.5 V 2.5 ns Minimum setup time, CET to CP (tS3): TC= +25C, VCC = 3.0 V 10.5 ns TC= +25C, VCC = 4.5 V 7.5 ns TC= -55C and +125C, VCC= 3.0 V13.5 ns TC= -55C and +125C, VCC= 4.5 V 9.0 ns 1/ Stresses a

18、bove the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the fu

19、ll specified VCCrange and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibilit

20、y with data retention and battery back-up systems. Data retention implies no input transition and no stored data loss with the following conditions: VIH 70% VCC, VIL 30% VCC, VOH 70% VCCat -20 A, VOL 30% VCCat 20 A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license

21、 from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91603 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 1.4 Recommended operating conditions Continued. Minimum hold time, CET to CP (th3): TC= +25C, VCC = 3.0 V. 0.0 ns TC= +25C, VCC = 4.5

22、V. 1.5 ns TC= -55C and +125C, VCC= 3.0 V 0.5 ns TC= -55C and +125C, VCC= 4.5 V 2.5 ns Minimum pulse width CP (tw): TC= +25C, VCC = 3.0 V. 5.0 ns TC= +25C, VCC = 4.5 V. 5.0 ns TC= -55C and +125C, VCC= 3.0 V 5.0 ns TC= -55C and +125C, VCC= 4.5 V 5.0 ns Minimum setup time, PE to CP (ts4): TC= +25C, VCC

23、 = 3.0 V. 7.0 ns TC= +25C, VCC = 4.5 V. 5.0 ns TC= -55C and +125C, VCC= 3.0 V 8.5 ns TC= -55C and +125C, VCC= 4.5 V 6.5 ns Minimum hold time, PE to CP (th4): TC= +25C, VCC = 3.0 V. 0.0 ns TC= +25C, VCC = 4.5 V. 1.5 ns TC= -55C and +125C, VCC= 3.0 V 0.5 ns TC= -55C and +125C, VCC= 4.5 V 2.0 ns Minimu

24、m setup time, U/D to CP (ts5): TC= +25C, VCC = 3.0 V.10.0 ns TC= +25C, VCC = 4.5 V. 7.5 ns TC= -55C and +125C, VCC= 3.0 V 13.0 ns TC= -55C and +125C, VCC= 4.5 V 9.0 ns Minimum hold time, U/D to CP (th5): TC= +25C, VCC = 3.0 V. 0.0 ns TC= +25C, VCC = 4.5 V. 1.5 ns TC= -55C and +125C, VCC= 3.0 V 0.5 n

25、s TC= -55C and +125C, VCC= 4.5 V 2.0 ns Maximum frequency, CP (fmax): TC= +25C, VCC = 3.0 V.75 MHz TC= +25C, VCC = 4.5 V.95 MHz TC= -55C and +125C, VCC= 3.0 V 55 MHz TC= -55C and +125C, VCC= 4.5 V 75 MHz 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s) 100k rads(S

26、i) Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91603 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specific

27、ation, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38

28、535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Dr

29、awings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The follow

30、ing document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standard No. 20 - Standard for Description of 54/74ACXXXXX and 54/74ACTXX

31、XXX Advanced High-Speed CMOS Devices. (Copies of these documents are available online at http:/www.jedec.org or from Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the referenc

32、es cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in acco

33、rdance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with

34、MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and here

35、in for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram

36、 shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control a

37、nd shall be made available to the preparing and acquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91603 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B

38、 SHEET 6 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating

39、temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers P

40、IN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q

41、 and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for dev

42、ice class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device cla

43、ss M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the

44、 manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535

45、 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing

46、is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made a

47、vailable onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 40 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without

48、license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-91603 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +3.0 V VCC +5.5 V Device type and VCCGroup A subgroups Limits 4/ Unitunless otherwise specified Device class Min Max Positive input clamp voltage VIC+For input under test, IIN= 1.0 mA All V 0.0 V 1 0.4 1.5 V