DLA SMD-5962-03248-2003 MICROCIRCUIT DIGITAL-LINEAR RADIATION HARDENED 9 AMP NON-INVERTING 5 V LOGIC UVLO FET DRIVER MONOLITHIC SILICON《硅单片欠压锁存输出FET逻辑驱动5伏特9安培同相线性数字微型电路》.pdf

《DLA SMD-5962-03248-2003 MICROCIRCUIT DIGITAL-LINEAR RADIATION HARDENED 9 AMP NON-INVERTING 5 V LOGIC UVLO FET DRIVER MONOLITHIC SILICON《硅单片欠压锁存输出FET逻辑驱动5伏特9安培同相线性数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-03248-2003 MICROCIRCUIT DIGITAL-LINEAR RADIATION HARDENED 9 AMP NON-INVERTING 5 V LOGIC UVLO FET DRIVER MONOLITHIC SILICON《硅单片欠压锁存输出FET逻辑驱动5伏特9安培同相线性数字微型电路》.pdf（21页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV SHET REV SHEET 15 16 17 18 19 20 REV STATUS REV OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43216 http

2、:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY RAYMOND MONNIN MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, 9 AMP NON-INVERTING 5 V LOGIC AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 03-09-30 UVLO FET DRIVER, MONOLITHIC SILICON AMSC N/A REV

3、ISION LEVEL SIZE A CAGE CODE 67268 5962-03248 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E463-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAW

4、ING SIZE A 5962-03248 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A

5、choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 03248 01 V X X Federal stoc

6、k class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with

7、the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Devi

8、ce type Generic number Circuit function 01 ISL74422BRH Radiation hardened, non-inverting 9 amp 5 V logic UVLO MOSFET driver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation

9、 M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as fol

10、lows: Outline letter Descriptive designator Terminals Package style X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking perm

11、itted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-03248 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) . 20 V Input voltage range (VIN) GND 6.5 V to +VS+0.3 V 2/ DC

12、input current, any one input (VIN VS+0.3 V or VIN GND 6.5 V) 10 mA Output short circuit duration (single supply) Continuous 3/ Maximum power dissipation (PD) 625 mW Maximum junction temperature (TJ) 175C Maximum storage temperature . -65C to +150C Maximum lead temperature (soldering 10 seconds) . 26

13、5C Thermal resistance, junction-to-case (JC) . 12C/W Thermal resistance, junction-to-ambient (JA) 80C/W 4/ 1.4 Recommended operating conditions. Supply voltage range (VS) 8 V to 18 V Under voltage lockout (UVLO) 6.0 V Operating ambient temperature range -55C to +125C 1.5 Radiation features. SEP effe

14、ctive let no upsets . 5/ Maximum total dose available: (dose rate = 50 - 300 rad(Si) / s) Device classes M, Q, and V . 300 Krads (Si) 6/ Latch up immune 7/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a par

15、t of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE

16、 MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. _ 1/ Stresses above the absolute maximum rating may cause permanent

17、damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Inputs must not go more negative than GND 6.5 V. 3/ Short circuit from the output to VScan cause excessive heating and eventual destruction. 4/ JAis measured with the component mounted o

18、n an evaluation PC board in free air. 5/ Value will be provided when testing is completed. 6/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions s

19、pecified in MIL-STD-883, method 1019, condition A. 7/ Guaranteed by process or design. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-03248 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION L

20、EVEL SHEET 4 DSCC FORM 2234 APR 97 HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document

21、Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws an

22、d regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. T

23、he modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the require

24、ments for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3

25、.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on

26、figure 3. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 4. 3.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter

27、 limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The par

28、t shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the de

29、vice. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification ma

30、rk for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-3853

31、5 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of complian

32、ce submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. Provi

33、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-03248 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Sym

34、bol Conditions 1/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Power supply current, low ISSBVS= 18 V, VIN= 0.8 V 1,2,3 01 2.1 mA low M,D,P,L,R,F 2/ 3/ 1 2.1 Power supply current, high ISSBVS= 18 V, VIN= 10.0 V 1,2,3 01 2.7 mA high M,D,P,L,R,F 2/ 3/ 1 2.

35、7 Input current, low IILVS= 18 V, VIN= 0 V 1,2,3 01 -10 +10 A M,D,P,L,R,F 2/ 3/ 1 -10 +10 Input current, high IIHVS= 18 V, VIN= 18 V 1,2,3 01 -10 +10 A M,D,P,L,R,F 2/ 3/ 1 -10 +10 Voltage output, low VOLVS= 18 V, IOUT= 10 mA 1,2,3 01 0.8 V M,D,P,L,R,F 2/ 3/ 1 0.8 Voltage output, high VOHVS= 18 V, IO

36、UT= 10 mA 1,2,3 01 16.9 V M,D,P,L,R,F 2/ 3/ 1 16.9 Input voltage, low VIL1VS= 18 V, limits applied during functional test 1,2,3 01 0.8 V M,D,P,L,R,F 2/ 3/ 1 0.8 VIL2VS= 8 V, limits applied during functional test 1,2,3 0.8 M,D,P,L,R,F 2/ 3/ 1 0.8 Input voltage, high VIH1VS= 18 V, limits applied durin

37、g functional test 1,2 01 3.0 V 3 3.5 M,D,P,L,R,F 2/ 3/ 1 3.0 VIH2VS= 8 V, limits applied during functional test 1,2 3.0 3 3.5 M,D,P,L,R,F 2/ 3/ 1 3.0 Functional test FTVS= 8 V, VS= 18 V 7,8A,8B 01 M,D,P,L,R,F 2/ 3/ 7,8A,8B See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction o

38、r networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-03248 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C

39、 unless otherwise specified Group A subgroups Device type Limits Unit Min Max Output resistance, output high RONHVS= 18 V, VIN= 5.0 V, 1,3 01 1.3 IOUT= 175 mA to 225 mA 2 1.5 M,D,P,L,R,F 2/ 3/ 1 1.3 Output resistance, output low RONLVS= 18 V, VIN= 0.8 V, 1,3 01 1.5 IOUT= 175 mA to 225 mA 2 1.7 M,D,P

40、,L,R,F 2/ 3/ 1 1.5 UVLO versus rising threshold 1,3 01 6.9 7.5 V 2 6.6 7.2 M,D,P,L,R,F 2/ 3/ 1 6.9 7.5 UVLO versus falling threshold hysteresis 1,3 01 6.3 6.9 V 2 6.0 6.6 M,D,P,L,R,F 2/ 3/ 1 6.3 6.9 UVLO hysteresis (rising falling) 1,2,3 01 0.3 V M,D,P,L,R,F 2/ 3/ 1 0.3 Propagation delay, low tPHLVS

41、= 18 V, CL= 10 nF 9,11 01 140 ns 10 175 M,D,P,L,R,F 2/ 3/ 9 140 Propagation delay, high tPLHVS= 18 V, CL= 10 nF 9,11 01 140 ns 10 175 M,D,P,L,R,F 2/ 3/ 9 140 Response time, fall TF VS= 15 V, CL= 10 nF 9,11 01 125 ns 10 135 M,D,P,L,R,F 2/ 3/ 9 125 See footnotes at end of table. Provided by IHSNot for

42、 ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-03248 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Con

43、ditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Response time, rise TR VS= 15 V, CL= 10 nF 9, 11 01 125 ns 10 135 M,D,P,L,R,F 2/ 3/ 9 125 1/ VS= as specified. 2/ The devices supplied to this drawing meet all levels M, D, P, L, R, F of irradiation

44、 (classes M, Q, and V). However, this device is only tested at the “F“ level (classes M, Q, and V). Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 3/ These parts may be dose ra

45、te sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 3.7 Certificate of conformance. A certificate of conformance as requi

46、red for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 here

47、in) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable r

48、equired documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 89 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-03248 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 8 DSCC FORM 2234 APR 97 Device type 01 Case outlin