DLA MIL-PRF-19500 657 B-2011 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR DIE N AND P-CHANNEL SILICON VARIOUS TYPES JANHC AND JANKC.pdf
《DLA MIL-PRF-19500 657 B-2011 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR DIE N AND P-CHANNEL SILICON VARIOUS TYPES JANHC AND JANKC.pdf》由会员分享,可在线阅读,更多相关《DLA MIL-PRF-19500 657 B-2011 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR DIE N AND P-CHANNEL SILICON VARIOUS TYPES JANHC AND JANKC.pdf(15页珍藏版)》请在麦多课文档分享上搜索。
1、 MIL-PRF-19500/657B 26 January 2011 SUPERSEDING MIL-PRF-19500/657A 22 February 2000 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-CHANNEL, SILICON VARIOUS TYPES JANHC AND JANKC This specification is approved for use by all Departmen
2、ts and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for N and P-channel, enhancement-mode, MOSFET, radiation
3、 hardened, power transistor die. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. * 1.2 Physical dimensions. See figures 1 through 8 herein. 1.3 Maximum ratings. See the applicable performance specification sheet from table I herein. 2. APPLICABLE DOCU
4、MENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to en
5、sure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following s
6、pecifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. * DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specif
7、ication for. * DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Buildi
8、ng 4D, Philadelphia, PA 19111-5094.) AMSC N/A FSC 5961 INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 April 2011. * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: V
9、AC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. Provided by IHSNot for ResaleNo reproduction or
10、networking permitted without license from IHS-,-,-MIL-PRF-19500/657B 2 * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in thi
11、s document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this sp
12、ecification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable Qualified Manufacturers List (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions u
13、sed herein shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figures 1 through 8 herein. 3.4.1 Lead finish, material, and thickness. The metallization shall be aluminum for the top and ch
14、rome-nickel-silver for the bottom. The nominal thickness of top metallization shall be 3 m (4 m nominal for all 60V die). The nominal thickness of back metallization shall be 0.55 m. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. *
15、 3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, too
16、ls, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting
17、to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/657B 3 2N7261, 2N7262, 2N73
18、80, 2N7381, 2N7382, 2N7383, 2N7389, 2N7390 NOTES: 1. Dimensions are in inches. * 2. Millimeters are given for general information only. * FIGURE 1. JANHCA and JANKCA (A-version) die dimensions for 2N7261, 2N7262, 2N7380, 2N7381, 2N7382, 2N7383, 2N7389, and 2N7390. Dimensions Ltr Inches Millimeters M
19、in Max Min Max BL .173 .189 4.39 4.80 BW .108 .124 2.74 3.15 OAH .0145 .0175 0.368 0.445 LL1 .042 .044 1.07 1.12 LL2 .029 .031 0.74 0.79 LL3 .0195 .0205 0.495 0.521 LL4 .026 .028 0.66 0.71 * * * * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-P
20、RF-19500/657B 4 2N7261, 2N7262, 2N7380, 2N7381 Dimensions - 2N7261, 2N7380 Dimensions - 2N7262, 2N7381 Ltr Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max A .181 .185 4.60 4.70 .179 .183 4.55 4.65 B .116 .120 2.95 3.05 .114 .118 2.90 3.00 C .032 .034 .81 .86 .028 .030 .71 .76 D
21、 .017 .019 .43 .48 .018 .020 .46 .51 E .024 .026 .61 .66 .024 .026 .61 .66 F .035 .037 .89 .94 .033 .036 .84 .91 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Unless otherwise specified, tolerance is .005 inch (0.13 mm). 4. The physical characteristics
22、 of the die are: The back metals are chromium, nickel, and silver and the back contact is the drain. The top metal is aluminum. 5. Die thickness is .015 inch (0.38 mm) .001 inch (0.025 mm). * FIGURE 2. JANHCB and JANKCB (B-version) die dimensions for 2N7261, 2N7262, 2N7380 and 2N7381. Provided by IH
23、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/657B 5 2N7382, 2N7389 Dimensions - 2N7382, 2N7389 Ltr Inches Millimeters Min Max Min Max A .181 .185 4.60 4.70 B .116 .120 2.95 3.05 C .032 .034 .81 .86 D .017 .019 .43 .48 E .024 .026 .61 .66 F .035 .0
24、37 .89 .94 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Unless otherwise specified, tolerance is .005 inch (0.13 mm). 4. The physical characteristics of the die are: The back metals are chromium, nickel, and silver and the back contact is the drain. T
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