DLA MIL-PRF-19500 428 H-2011 SEMICONDUCTOR DEVICE FIELD-EFFECT TRANSISTOR N-CHANNEL SILICON TYPE 2N4416A AND 2N4416AUB JAN JANTX JANTXV AND JANS.pdf

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1、 MIL-PRF-19500/428H 8 August 2011 SUPERSEDING MIL-PRF-19500/428G 16 May 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A AND 2N4416AUB, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agenci

2、es of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for N-channel, junction, silicon field-effect transistors. Three levels

3、 of product assurance are provided for the device type as specified in MIL-PRF-19500. (The JANS level is inactive for new designs.) 1.2 Physical dimensions. See figure 1 (TO-72) and figure 2 (surface mount, UB). 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Types PT(1) TA= +25C VDGand V

4、DSVGSIGTSTGand TJ2N4416A, 2N4416AUB mW 300 V dc 35 V dc -35 mA dc 10 C -65 to +200 (1) Derate linearly, 1.7 mW/C for TA +25C. AMSC N/A FSC 5961INCH-POUND JANS level is inactive for new design. * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:

5、VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures ne

6、cessary to comply with this revision shall be completed by 8 November 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/428H 2 1.4 Primary electrical characteristics at TA= +25C. Limit IDSS(1) VDS= 15 V dc VGS= 0 VGS(off) VDS= 15 V

7、dc ID= -1.0 nA dc NF VDS= 15 V dc ID= 5 mA dc RG= 1 k ohms f = 100 MHz Minimum Maximum mA dc 5.0 15.0 V dc -2.5 -6.0 dB 2 Limit |yfs| (2) VDS= 15 V dc VGS= 0 f = 1 kHz |yos| (2) VDS= 15 V dc VGS= 0 f = 1 kHz CossVDS= 15 V dc VGS= 0 f = 1 MHz CissVDS= 15 V dc VGS= 0 f = 1 MHz CrssVDS= 15 V dc VGS= 0

8、f = 1 MHz Minimum Maximum mS 4.5 7.5 S 50 pF 2 pF 4 pF 0.8 (1) Pulsed (see 4.5.1). (2) Pulsed width = 100 ms; duty cycle = 10 percent. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include d

9、ocuments cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4,

10、or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these do

11、cuments are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at h

12、ttps:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the te

13、xt of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without l

14、icense from IHS-,-,-MIL-PRF-19500/428H 3 Ltr Dimensions Notes Inches Millimeters Min Max Min Max HD .209 .230 5.31 5.84 CD .178 .195 4.52 4.95 CH .170 .210 4.32 5.33 LL .500 .750 12.70 19.05 6 LD .021 0.53 2, 6 LU .016 .019 0.41 0.48 3, 6 TL .028 .048 0.71 1.22 5 TW .036 .046 0.91 1.17 NOTES: 1. Dim

15、ensions are in inches, millimeters are given for general information only. 2. Measured in the zone beyond .250 (6.35 mm) from the seating plane. 3. Measured in the zone .050 (1.27 mm) and .250 (6.35 mm) from the seating plane. 4. When measured in a gauging plane .054 +.001, - .000 (1.37 +0.03, -0.00

16、 mm) below the seating plane of the transistor, maximum diameter leads shall be within .007 (0.18 mm) of their true location relative to a maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance. 5. Measured from the maximum diameter of the actu

17、al device. 6. All four leads. 7. Lead 1 = source, lead 2 = drain, lead 3 = gate, lead 4 = case. 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions 2N4416A. TO-72 Provided by IHSNot for ResaleNo reproduction or networking permitted without licens

18、e from IHS-,-,-MIL-PRF-19500/428H 4 Dimensions Symbol Inches Millimeters Note Min Max Min Max BH .046 .056 1.17 1.42 BL .115 .128 2.92 3.25 BW .085 .108 2.16 2.74 CL .128 3.25 CW .108 2.74 LL1 .022 .038 0.56 0.96 LL2 .017 .035 0.43 0.89 LS1 .036 .040 0.91 1.02 LS2 .071 .079 1.81 2.01 LW .016 .024 0.

19、41 0.61 r .008 .203 r1 .012 .305 r2 .022 .559 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Lid material: Kovar. 5. Pad 1 = Drain, Pad 2 = Source, Pad 3 = Gate, Pad 4 = Shielding connected to the lid

20、. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions, surface mount (2N4416AUB). UB Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/428H 5 3. REQUIREMENTS 3.1 General. The individ

21、ual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers lis

22、t (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. mS millisiemans RG. Transformed equivalent source resistance. S . microsiemans |yos| . Magnitude of

23、 small-signal common-source short-circuit output admittance. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 (TO-72) and 2 (surface mount, UB). 3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solder

24、able in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as spec

25、ified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be table I as specified herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on the UB package shall consist of an abbreviated part nu

26、mber, the date code, and the manufacturers symbol or logo. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The “2N“ prefix and the “AUB“ suffix can also be omitted. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uni

27、form in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conf

28、ormance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a pr

29、ior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for Res

30、aleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/428H 6 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with ta

31、ble I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 9 and 10 Not applicable. Not applicable. 11 IGSS1and IDSSIGSS1and IDSS12 See 4.3.1, 240 hours minimum. See 4.3.1, 160 hours

32、minimum. 13 Subgroups 2 and 3 of table I herein; IDSS= 10 percent of initial value. Subgroup 2 of table I herein; IDSS= 10 percent of initial value. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Method 1039 of MIL-STD-750, condition A; TA= +175C; VGS= -24 V dc; VDS= 0. 4.4

33、 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Group A inspection shall be performed on each sublot. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B

34、inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIA (JANS) and E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500, 4.4.2.1, and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with the applicable

35、inspections of table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 2037 Test condition A. B4 1037 PT= 300 mW at TA= +25C; ton= toff= 3 minutes minimum for 2,000 cycle

36、s. No heat sink or forced air cooling shall be permitted. B5 2037 (Al-Au die interconnects only) test condition A. B5 1027 VDS= 15 V dc; ID= 20 mA dc at TA= +100C or adjusted as required by the chosen TAto achieve an average lot TJ= +275C. Provided by IHSNot for ResaleNo reproduction or networking p

37、ermitted without license from IHS-,-,-MIL-PRF-19500/428H 7 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1027 VGS= -24 V dc; VDS= 0; TA= +175C 3C. No heat sink or forced-air cooling on the devices shall be permitted. B3 2037 Test cond

38、ition A. B6 1032 TA= +200C. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. D

39、elta measurements shall be in accordance with table II herein. Subgroup Method Condition C2 2036 Test condition E; not applicable for UB devices. C6 1026 VGS= -24 V dc; VDS= 0; TA= +175C 3C. No heat sink or forced-air cooling on the devices shall be permitted. 4.4.4 Group E inspection. Group E inspe

40、ction shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with t

41、able II herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Disposition of case lead during electrical measurements.

42、 All electrical measurements and operating life test shall be performed with the case lead connected to the source. 4.5.3 Small-signal common-source short-circuit input, output, or forward transfer conductance and susceptance. These tests shall be conducted with a General Radio transfer function and

43、 admittance bridge model 1607A (or suitable equivalent) in accordance with the portion of its accompanying handbook which is applicable to this measurement. A Hewlett-Packard generator model 608D and Nems-Clarke receiver model 1502A (or suitable equivalents) shall be used with the transfer function

44、and admittance bridge. 4.5.4 Spot noise figure tests. These tests shall be conducted using the equipment and circuit shown on figures 3 and 4, or suitable equivalent. 4.5.5 Small-signal common-source insertion power gain. This test shall be conducted using the circuit shown on figure 4, or suitable

45、equivalent. 4.5.6 Small-signal common-source short-circuit output capacitance. This test shall be conducted using the circuit shown on figure 5 or suitable equivalent. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/428H 8 TABLE I. Grou

46、p A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Breakdown voltage, gate to source 3401 Bias condition C; IG= 1 A dc; VDS= 0 V(BR)GSS-35 V dc Gate reverse current 3411 Bias condition C; VGS= 20 V dc; V

47、DS= 0 IGSS1-0.1 nA dc Drain current 3413 Bias condition C, VDS= 15 V dc; pulsed (see 4.5.1) IDSS5 15 mA dc Gate to source voltage 3403 VDS= 15 V dc; ID= 0.5 mA dc VGS-1 -5.5 V dc Gate to source cutoff voltage 3403 VDS= 15 V dc; ID= 1.0 nA dc VGS(off)-2.5 -6.0 V dc Gate to source forward voltage 3403

48、 VDS= 0; IG= 1.0 mA dc VGSF1 V dc Subgroup 3 High-temperature operation: Gate reverse current 3411 TA= +150C Bias condition C; VGS= 20 V dc IGSS2-0.1 A dc Low-temperature operation: Magnitude of small- signal, common- source short- circuit forward transfer admittance 3455 TA= -55C VDS= 15 V dc; VGS=

49、 0; f = 1 kHz |yfs|111.25 mS Subgroup 4 Magnitude of small- signal, common- source short- circuit forward transfer admittance 3455 VDS= 15 V dc; VGS= 0; f = 1 kHz; pulse width = 100 ms; duty cycle = 10 percent |yfs|24.5 7.5 mS See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,