DLA MIL-PRF-19500 426 G-2013 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON AMPLIFIER TYPE 2N4957 AND 2N4957UB JAN JANTX JANTXV JANTXVM JANTXVD JANTXVP JANTXVL JANTXVR JANTXVF JANTXVGF.pdf
《DLA MIL-PRF-19500 426 G-2013 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON AMPLIFIER TYPE 2N4957 AND 2N4957UB JAN JANTX JANTXV JANTXVM JANTXVD JANTXVP JANTXVL JANTXVR JANTXVF JANTXVGF.pdf》由会员分享,可在线阅读,更多相关《DLA MIL-PRF-19500 426 G-2013 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON AMPLIFIER TYPE 2N4957 AND 2N4957UB JAN JANTX JANTXV JANTXVM JANTXVD JANTXVP JANTXVL JANTXVR JANTXVF JANTXVGF.pdf(19页珍藏版)》请在麦多课文档分享上搜索。
1、 MIL-PRF-19500/426G 30 March 2013 SUPERSEDING MIL-PRF-19500/426F 29 June 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER TYPE 2N4957 AND 2N4957UB, JAN, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANS, JANSM, J
2、ANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHC, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The re
3、quirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon, VHF-UHF amplifier transistors. Four levels of product assurance are provided for each device
4、type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance (RHA) level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices which have passed RHA requiremen
5、ts. 1.2 Physical dimensions. See figure 1 (TO-72) and figure 2 (surface mount) and figure 3 (JANHC and JANKC die). 1.3 Maximum ratings. PT(1) TA= +25C VCEOVCBOICVEBOTSTGand TJmW V dc V dc mA dc V dc C 200 30 30 30 3.0 -65 to +200 (1) Derate at 1.14 mW/C above TA +25C. AMSC N/A FSC 5961 INCH-POUND *
6、Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the AS
7、SIST Online database at https:/assist.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 30 June 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/426G 2 FIGURE 1
8、. Physical dimensions of transistor type 2N4957 (TO-72). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/426G 3 Symbol Dimensions Notes Inches Millimeters Min Max Min Max CD .178 .195 4.52 4.95 5 CH .170 .210 4.32 5.33 HD .209 .230 5.31
9、 5.84 5 LC .100 TP 2.54 TP LD .016 .021 0.41 0.533 7,8 LL .500 .750 12.70 19.05 7,8 LU .016 .019 0.41 0.48 7,8 L1.050 1 .27 8 L2.250 6.35 8 P .100 2.54 Q .050 1.27 5 r .007 0.18 TL .028 .048 0.71 1.22 TW .036 .046 0.91 1.17 45 TP 45 TP NOTES: 1. Dimension are in inches. 2. Millimeters are given for
10、general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating
11、plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in L1and
12、beyond LL minimum. 8. All four leads. 9. Dimension r (radius) applies to both inside corners of tab. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected). FIGURE 1. Physical dimens
13、ions of transistor type 2N4957 (TO-72) Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/426G 4 Dimensions Symbol Inches Millimeters Note Min Max Min Max BH .046 .056 1.17 1.42 BL .115 .128 2.92 3.25 BW .085 .108 2.16 2.74 CL .
14、128 3.25 CW .108 2.74 LL1 .022 .038 0.56 0.97 LL2 .017 .035 0.43 0.89 LS1 .036 .040 0.91 1.02 LS2 .071 .079 1.80 2.01 LW .016 .024 0.41 0.61 r .008 .203 r1 .012 .305 r2 .022 .559 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package de
15、note metallized areas. 4. Lid material: Kovar. 5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions, surface mount (2N4957UB version). UB Provided by IHSN
16、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/426G 5 Die size: .016 x .016 inch (0.406 mm x 0.406 mm). Die thickness: .008 .0016 inch (0.2032 mm 0.04064 mm). Base bonding pad: .0023 x .0023 inch (0.058 mm x 0.058 mm). Emitter bonding pad: .0023 x .00
17、23 inch (0.058 mm x 0.058 mm). Back metal: Gold, 6,500 1950 . Top metal: Aluminum, 14,500 3,000 . Back side: Collector. Glassivation: SiO2, 7,500 1,500 . FIGURE 3. JANHC and JANKC (A-version) die dimensions. B E E 0006 Provided by IHSNot for ResaleNo reproduction or networking permitted without lice
18、nse from IHS-,-,-MIL-PRF-19500/426G 6 1.4 Primary electrical characteristics (common to all types). Limits hFE3|hfe| rbCcrbCcCcbGpeNF VCE= 10 V dc IC= 5.0 mA dc IE= 2.0 mA dc, VCE= 10 V dc f = 100 MHz IE= 2.0 mA dc f = 63.6 MHz VCB= 10 V dc (2N4957 only) IE= 2.0 mA dc f = 63.6 MHz VCB= 10 V dc (2N49
19、57UB only) VCB= 10 V dc IE= 0 100 kHz f 1 MHz IC= 2.0 mA dc f = 450 MHz VCE= 10 V dc IC= 2.0 mA dc VCE= 10 V dc f = 450 MHz ps ps pF dB dB Min 30 12 1.0 1.0 17 Max 165 36 8.0 16.0 0.8 25 3.5 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or
20、5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all spec
21、ified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified he
22、rein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices
23、. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract,
24、 in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The ind
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