DLA MIL-PRF-19500 337 L-2013 SEMICONDUCTOR DEVICE DIODE SILICON SWITCHING TYPES 1N4153-1 1N4153UR-1 1N4153UB 1N4153UBCA 1N4153UBCC 1N4153UBD 1N4153UBN 1N4153UBCNA 1N4153UBCNC 1N415 .pdf

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1、 MIL-PRF-19500/337L 15 March 2013 SUPERSEDING MIL-PRF-19500/337K AMENDMENT 3 3 June 2011 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4153-1, 1N4153UR-1, 1N4153UB, 1N4153UBCA, 1N4153UBCC, 1N4153UBD, 1N4153UBN, 1N4153UBCNA, 1N4153UBCNC, 1N4153UBND, 1N4534

2、, AND 1N4534UB, JAN, JANTX, JANTXV, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This

3、specification covers the performance requirements for controlled forward voltage switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. * 1.2 Physical dimen

4、sions. See figure 1 (axial leads), figure 2 (DO-213AA), figure 3 (UB and UBN), figure 4 (die). * 1.3 Maximum ratings. Unless otherwise specified TA= +25C. Type VBRVRWMIO(PCB)TA= 75C (1) (2) IFSMtp= 8.3ms TSTGpads for (UR) = .061 inch (1.55 mm) x .105 inch (2.67 mm); pads for axial = .092 inch (2.34

5、mm) diameter, strip = .030 inch (0.76 mm) x 1 inch (25.4 mm) long, lead length L .187 inch ( 4.75 mm); RJAwith a defined PCB thermal resistance condition included, is measured at IO= 200 mA dc. (3) See figures 7, 8, and 9 for thermal impedance curves. (4) RJSPrefers to thermal resistance from juncti

6、on to the solder pads of the UB and UBN package. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductordla.mil . Since contact information can cha

7、nge, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 15 June 2013. Provided by IHSNot for ResaleNo reproduction o

8、r networking permitted without license from IHS-,-,-MIL-PRF-19500/337L 2 1.4 Primary electrical characteristics at TA= +25C, unless otherwise specified. Limits VF1IF= 100 A dc VF2IF= 250 A dc VF3IF= 1 mA dc VF4IF= 2 mA dc VF5IF= 10 mA dc VF6IF= 20 mA dc Min Max 0.490 V dc 0.550 V dc 0.530 V dc 0.590

9、 V dc 0.590 V dc 0.670 V dc 0.620 V dc 0.700 V dc 0.700 V dc 0.810 V dc 0.740 V dc 0.880 V dc Limit IR1VR= 50 V dc IR2VR= 50 V dc TA= 150C C VR= 0 V dc f = 1 MHz trrIF= IR= 10 mA dc RL= 100 ohms, IRR= 1.0 mA dc Max 50 nA dc 50 A dc 2.0 pF 4 ns (1) Primary electrical characteristics for surface mount

10、 devices are equivalent to the corresponding non-surface mount devices unless otherwise specified. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of

11、this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether

12、or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solic

13、itation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or

14、 https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited here

15、in, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/337L 3 Types Di

16、mensions Ltr Inches Millimeters Min Max Min Max 1N4153-1 (DO-35) BD .056 .075 1.42 1.91 BL .140 .180 3.56 4.57 LD .018 .022 0.46 0.56 LL 1.000 1.500 25.40 38.10 1N4534 (DO-34) BD .050 .075 1.27 1.91 BL .080 .120 2.03 3.05 LD .018 .022 0.46 0.56 LL 1.000 1.500 25.40 38.10 NOTES: 1. Dimensions are in

17、inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/337L 4 Symbol Dime

18、nsions Inches Millimeters Min Max Min Max BD .063 .067 1.60 1.70 BL .130 .146 3.30 3.70 ECT .016 .022 0.41 0.55 S .001 min 0.03 min NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions are pre-solder dip. 4. Referencing to dimension S, minimum clea

19、rance of glass body to mounting surface on all orientations. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions, 1N4153UR-1 (DO-213AA). DO-213AA Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MI

20、L-PRF-19500/337L 5 * FIGURE 3. Physical dimensions, surface mount (UB and UBN version). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/337L 6 Dimensions Symbol Inches Millimeters Note Min Max Min Max BL .115 .128 2.92 3.25 BW .095 .108

21、 2.41 2.74 BH .046 .056 1.17 1.42 UB and UBN only, 4 CL .128 3.25 CW .108 2.74 LL1 .022 .038 0.56 0.97 3 places LL2 .014 0.356 3 places LS1.035 .039 0.89 0.99 LS2.071 .079 1.80 2.01 LW .016 .024 0.41 0.61 r1 .012 0.30 5 r2 .022 0.56 UB and UBC only, 5 NOTES: 1. Dimensions are in inches. 2. Millimete

22、rs are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. For design reference only. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 1N415

23、3UBCA 1N4153UBD 1N4153UB 1N4153UBCC Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/337L 7 Ltr Dimensions Inches Millimeters Min Max Min Max A .0059 .0061 .150 .155 B .0130 .0170 .330 . 432 NOTES: 1. Dimensions are in inches. 2. Millime

24、ters are given for general information only. 3. Element evaluation accomplished utilizing TO-5 package. 4. The physical characteristics of the die are: Metallization: Top (anode): Al. Back (cathode): Au. Al thickness: 25,000 minimum. Gold thickness: 4,000 minimum. Chip thickness: .010 inches (0.25 m

25、m) .002 inches (0.05 mm). FIGURE 4. Physical dimensions, JANHCA and JANKCA die. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/337L 8 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500

26、and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbrevia

27、tions, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 (axial leads), figure 2 (DO-213AA), figure

28、3 (UB and UBN), figure 4 (die). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. All devices (except UB versio

29、n) shall be metallurgically bonded, double plug construction in accordance with the requirements of MIL-PRF-19500. All glass diodes shall be designed with sufficient thermal compensation in the axial direction to optimize tensile and compressive stresses. Dimensional analysis is required of all mate

30、rials used to achieve axial thermal compensation. Dimensional tolerances and corresponding coefficient of thermal expansion (CTE) shall be documented on the DSCC Design and Construction Form 36D and shall be approved by the qualifying activity to maintain qualification. Dimensional tolerances shall

31、be sufficiently tight enough to prevent excessive stresses due to the inherent CTE mismatch. The UB devices shall be eutectically mounted and wire bonded in a ceramic package. The UR version shall be structurally identical to the axial leaded versions except for end-cap lead attachment. 3.5 Marking.

32、 Marking shall be in accordance with MIL-PRF-19500. Manufacturers identification and date code shall be marked on the devices. Initial container package marking shall be in accordance with MIL-PRF-19500. The polarity shall be indicated with a contrasting color band to denote the cathode end. The pre

33、fixes JAN, JANTX, and JANTXV may be abbreviated as J, JX, and JV, respectively. The part number may be reduced to J4153, JX4153, or JV4153. No color coding shall be permitted for part numbering. 3.5.1 UR devices. For UR version devices only, all marking, except polarity, may be omitted from the body

34、, but shall be retained on the initial container. Polarity marking of UR devices shall consist as a minimum, a band or three contrasting dots around the periphery of the cathode. At the option of the manufacturer, UR surface mount devices may include laser marking on an end-cap, to include part numb

35、er and lot date code for all levels. The prefixes JAN, JANTX, or JANTXV may be abbreviated as J, JX, or JV, respectively. (Example: The part number may be reduced to JV4153). 3.5.2 UB devices. UB devices do not require polarity marking. 3.6 Electrical performance characteristics. Unless otherwise sp

36、ecified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be unifor

37、m in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/337L 9 4. VERIFICATION 4.1 Classification of inspections. The inspection requirement

38、s specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Gro

39、up E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not require the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision

40、 shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANTX and JANTXV levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. Specified electrical measurements shall be made in accordance with table I h

41、erein. Devices that exceed the limits of table I herein shall not be acceptable. Screening (see table E-IV of MIL-PRF-19500) JANTXV and JANTX level (1) 3c Thermal impedance (see 4.3.2) 9 Not required 10 Method 1038 of MIL-STD-750, condition A (2) 11 IR1and VF112 See 4.3.1 (3) (4) 13 Subgroup 2 of ta

42、ble I herein; IR1= 100 percent of initial value or 15 nA dc, whichever is greater; VF1= 25 mV dc. (1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. (2) Test within 24 hours

43、after removal from test. (3) When thermal impedance is performed prior to screen 13, it is not required to be repeated in screen 13. (4) PDA 5 percent. * 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.2): Method 1038 of MIL-STD-750, condition B. VR= rated VRWM; f =

44、50 - 60 Hz; IO(min)= 200 mA dc or IF= 200 mA dc minimum = IO(PCB). TA= +75C maximum. The maximum current density of small die shall be submitted to the qualifying activity for approval. Alternate mounting conditions shall be submitted to the qualifying activity for approval. With approval of the qua

45、lifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will

46、 be essential criteria for burn-in modification approval. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/337L 10 4.3.2 Thermal impedance measurements. The thermal impedance measurements shall be performed in accordance with method 3101

47、 or 4081 of MIL-STD-750, as applicable, using the guidelines in that method for determining IHand IM. tMDshall be 70 s maximum, tHshall be 10 ms maximum. The thermal impedance limit shall comply with the thermal impedance graphs on figures 7, 8, and 9 (less than or equal to the curve value at the sa

48、me tHtime) and shall be less than the process determined statistical maximum limit as outlined in method 3101 or 4081 of MIL-STD-750, as applicable. See group E, subgroup 4 of table II herein. 4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with appendix G of MIL-PRF-19500. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.3.4 JAN testing. JAN level product shall have temperature cycling and thermal impedance testing performed in accordance with MIL-PRF-19500, JANTX level