DLA MIL-PRF-19500 336 L (1)-2013 SEMICONDUCTOR DEVICE UNITIZED DUAL-TRANSISTOR PNP SILICON TYPES 2N3810 2N3810L 2N3810U 2N3811 2N3811L AND 2N3811U JAN JANTX JANTXV JANS JANSM JANSDN.pdf

《DLA MIL-PRF-19500 336 L (1)-2013 SEMICONDUCTOR DEVICE UNITIZED DUAL-TRANSISTOR PNP SILICON TYPES 2N3810 2N3810L 2N3810U 2N3811 2N3811L AND 2N3811U JAN JANTX JANTXV JANS JANSM JANSDN.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 336 L (1)-2013 SEMICONDUCTOR DEVICE UNITIZED DUAL-TRANSISTOR PNP SILICON TYPES 2N3810 2N3810L 2N3810U 2N3811 2N3811L AND 2N3811U JAN JANTX JANTXV JANS JANSM JANSDN.pdf（26页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/336L w/AMENDMENT 1 21 June 2013 SUPERSEDING MIL-PRF-19500/336L 30 January 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, PNP, SILICON, TYPES 2N3810, 2N3810L, 2N3810U, 2N3811, 2N3811L, AND 2N3811U, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JA

2、NSL, JANSR, JANHCF, JANHCG, JANSH, JANHCA, JANHCB, JANKCA, JANKCB, JANKAM, JANKAD, JANKAP, JANKAL, JANKAR, JANKCAF, JANKCAG, AND JANKCAH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein sh

3、all consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched PNP, silicon transistors as one dual unit. Four levels of product assurance are provided for each encapsulated device type as s

4、pecified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance (RHA) level designators “M“, “D“, “P“, “L“, “R“, “F“, “G“, and “H“ are appended to the device prefix to identify devices, which have passed RHA requirements.

5、1.2 Physical dimensions. See figure 1 (similar to TO-78), figures 2 and 3 for unencapsulated devices, and figure 4 for U devices. 1.3 Maximum ratings, unless otherwise specified, TC=+25C. Type ICVCBOVCEOVEBOmA dc V dc V dc V dc All types 50 60 60 5 PT(1) TA= +25C PT(2) TC= +25C RJARJC(3) TJ and TSTG

6、 One section Both sections One section Both sections One section Both sections One section Both sections mW (4) 200 mW (4) 350 mW 300 mW 450 C/W 875 C/W 500 C/W 583 C/W 350 C -65 to +200 (1) For TA +25C, derate linearly 1.143 mW/C, one section; 2.000 mW/C, both sections. See figure 5 and 6. (2) For

7、TC +25C, derate linearly 1.714 mW/C, one section; 2.571 mW/C, both sections. (3) For TO-78 devices only. (4) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 5 and 6 for the U package and use RJA. AMSC N/A FSC 5961INCH-POUND * Comments, suggestio

8、ns, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online databas

9、e at https:/assist.dla.mil. The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/336L w/AMENDMENT 1 2 1.4 Prima

10、ry electrical characteristics at TA= +25, pulsed (see 4.5.2). Limit hFE3through hFE4VCE= 5 V dc; IC= 100 A dc Through IC= 1 mA dc hfe2 VCE= 5 V dc; IC= 1 mA dc; f = 100 MHz VBE(sat) 2IC= 1 mA dc; IB= 100 A dc VCE(sat) 2IC= 1 mA dc; IB= 100 A dc Minimum Maximum 2N3810 2N3810L 150 450 2N3811 2N3811L 3

11、00 900 1 5 V dc 0.8 V dc 0.25 1.5 Primary electrical matching characteristics of each individual section. Limit hFE3-1hFE3-2VCE= 5 V dc; IC= 100 A dc (1) VBE1 VBE2 2VCE= 5 V dc; IC= 100 A dc (VBE1 VBE2) TA1 VCE= 5 V dc IC= 100 A dc TA= +25C and 55C (VBE1 VBE2) TA2 VCE= 5 V dc; IC= 100 A dc TA= +125C

12、 and +25C Minimum Maximum 0.9 1.0 mV dc 3 mV dc 0.8 mV dc 1.0 (1) The larger number will be placed in the denominator. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/336L w/AMENDMENT 1 3 FIGURE 1. Physical dimensions (similar to TO-78)

13、. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/336L w/AMENDMENT 1 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Refer to rules for dimensioning Semiconductor Product Outlines included

14、 in Publication No. 95. 4. Lead number 4 and 8 omitted on this variation. 5. TW must be held to a minimum length of .021 inch (0.53 mm). 6. LL measured from maximum HD. 7. Details of outline in this zone optional. 8. CD shall not vary more than .010 inch (0.25mm) in zone P. This zone is controlled f

15、or automatic handling. 9. Leads at gauge plane .054 - .055 inch (1.37 1.40 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by direct methods or by the gauge and gauging pr

16、ocedure described on gauge drawing GS-1. 10. LD applies to LL minimum. 11. r (radius) applies to both inside corners of tab. 12. For transistor types 2N3810 and 2N3811, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum. (TO-99). 13. For transistor types 2N3810L and 2N3811L, LL is

17、1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum. 14. In accordance with AMSE Y14.5M, diameters are equivalent to x symbology. 15. Leads 3 and 5 = emitter, leads 2 and 6 = base, leads 1 and 7 = collector. FIGURE 1. Physical dimensions (similar to TO-78) Continued. LTR Dimensions

18、Notes Inches Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .150 .185 3.81 4.70 HD .335 .370 8.51 9.40 HT .009 .041 0.23 1.04 LC .200 BSC 5.08 BSC LD .016 .021 0.41 0.53 10 LL See notes 10, 11, and 13 45TP 45TP 9 TL .029 .045 0.74 1.14 5, 6 TW .028 .034 0.71 0.86 4, 5 Provided by IHSNot for R

19、esaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/336L w/AMENDMENT 1 5 1. Chip size .015 x .019 inch .001 inch (0.38 x 0.48 mm 0.025 mm). 2. Chip thickness .010 0.0015 inch (0.25 0.038 mm). 3. Top metal. Aluminum 15,000 minimum, 18,000 nominal. 4. Back metal. A.

20、 Gold 3,000 minimum, 5,000 nominal. 5. Backside. Collector. 6. Bonding padB = .003 inch (0.07 mm), E = .004 inch (0.10 mm) diameter. 7. PassivationSi3N4(Silicon Nitride) 5,600 minimum, 8,000 nominal. FIGURE 2. JANHC and JANKC A-version die dimensions. Provided by IHSNot for ResaleNo reproduction or

21、networking permitted without license from IHS-,-,-MIL-PRF-19500/336L w/AMENDMENT 1 6 Die size: .018 x .018 inch (0.457 X 0.457 mm). Die thickness: .008 .0016 inch (0.20 0.041 mm). Base pad: .0025 inch diameter (0.064 mm). Emitter pad: .003 inch diameter (0.076 mm). Back metal: Gold, 6,500 1,950 . To

22、p metal: Aluminum, 19,500 2,500 . Back side: Collector. Glassivation: SiO2, 7,500 1,500 . FIGURE 3. JANHC and JANKC B-version die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/336L w/AMENDMENT 1 7 Dimensions Symbol Inches

23、Millimeters Min Max Min Max BL .240 .250 6.10 6.35 BL2.250 6.35 BW .165 .175 4.19 4.45 BW2.175 4.45 CH .044 .080 1.12 2.03 Pin no. Transistor LH .026 .039 0.66 0.99 1 Collector no. 1 LL1.060 .070 1.52 1.78 2 Base no. 1 LL2.082 .098 2.08 2.49 3 Base no. 2 LS1.095 .105 2.41 2.67 4 Collector no. 2 LS2.

24、045 .055 1.14 1.40 5 Emitter no. 2 LW .022 .028 0.56 0.71 6 Emitter no. 1 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with AMSE Y14.5M, diameters are equivalent to x symbology. FIGURE 4. Physical dimensions (2N3810U and 2N3811U). Provid

25、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/336L w/AMENDMENT 1 8 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents

26、 cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of

27、this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents

28、are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/qui

29、cksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the re

30、ferences cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as

31、modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbol

32、s, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. HFE3-1- - - - - - - - - - - - - - - - -.- - - - - - - - - - - -Static forward-current-gain-ratio. The matching ratio of the static hFE3-2forward-current transfer ratios of e

33、ach section. VBE1 VBE2 - - - - - - - - - - - - - - - - - - - - - - -Absolute value of base-emitter-voltage differential between the individual sections. VBE1-2(T1) - VBE1-2(T2) - - - - - - - - - - - - Absolute value of the algebraic difference between the base-emitter-voltage differentials between t

34、he individual sections at two different temperatures. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/336L w/AMENDMENT 1 9 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-195

35、00, and on figure 1 (similar to TO-78), figures 2 and 3 for unencapsulated devices, and figure 4 for U devices. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisi

36、tion document (see 6.2). 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics

37、 are as specified in 1.3, 1.4, 1.5, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede

38、(or replace) the device “2N“ identifier (depending upon degree of abbreviation required). 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION

39、4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in

40、accordance with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case quali

41、fication was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification

42、. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/336L w/AMENDMENT 1 10 4.2.2.1 Group E thermal response. With extremely small junction devices such as this one, a true thermal impedance cannot be measured, only calculated. While “therm

43、al response” has been substituted for “thermal impedance” herein, the terms, units and procedure as essentially unchanged. Each supplier shall submit a thermal response (ZJX) histogram of the entire qualification lot. The histogram data shall be taken prior to the removal of devices that are atypica

44、l for thermal response. Thermal response curves (from ZJXtest pulse time to RJXminimum steady-state time) of the best device in the qual lot and the worst device in the qual lot (that meets the supplier proposed screening limit), or from the thermal grouping, shall be submitted. The optimal test con

45、ditions and proposed initial thermal response screening limit shall be provided in the qualification report. Data indicating how the optimal test conditions were derived for ZJXshall also be submitted. The proposed maximum thermal response ZJXscreening limit shall be submitted. The qualifying activi

46、ty may approve a different ZJXlimit for conformance inspection end-point measurements as applicable. Equivalent data, procedures, or statistical process control plans may be used for part, or all, of the above requirements. The approved thermal response conditions and limit for ZJXshall be used by t

47、he supplier in screening and table I, subgroup 2. The approved thermal resistance conditions for RJXshall be used by the supplier for conformance inspection. For product families with similar thermal characteristics based on the same physical and thermal die, package, and construction combination (t

48、hermal grouping), the supplier may use the same thermal response curves. 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3c Thermal response, method 3131 of MIL-STD-750. See 4.3.3.