ASTM F1269-2006 Test Methods for Destructive Shear Testing of Ball Bonds《球压焊的破坏性剪切试验方法》.pdf
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1、Designation: F 1269 06Standard Test Methods forDestructive Shear Testing of Ball Bonds1This standard is issued under the fixed designation F 1269; the number immediately following the designation indicates the year oforiginal adoption or, in the case of revision, the year of last revision. A number
2、in parentheses indicates the year of last reapproval. Asuperscript epsilon (e) indicates an editorial change since the last revision or reapproval.1. Scope1.1 These test methods cover tests to determine the shearstrength of a series of ball bonds made by either thermalcompression or thermosonic tech
3、niques.NOTE 1Common usage at the present time considers the term “ballbond to include the enlarged spheriodal or nailhead portion of the wire,(produced by the flameoff and first bonding operation in the thermalcompression and thermosonic process, or both,) the underlying bondingpad, and the ball bon
4、d-bonding pad interfacial-attachment area or weldinterface.1.2 These test methods cover ball bonds made with smalldiameter (from 18 to 76-m (0.0007 to 0.003-in.) wire of thetype used in integrated circuits and hybrid microelectronicassemblies.1.3 These test methods can be used only when the ballheig
5、ht and diameter are large enough and adjacent interferingstructures are far enough away to allow suitable placement andclearance (above the bonding pad and between adjacent bonds)of the shear test ram.1.4 These test methods are destructive. They are appropriatefor use in process development or, with
6、 a proper sampling plan,for process control or quality assurance.1.5 Anondestructive procedure is possible;2although it maybe contra indicated due to the possible interference withadjacent wire bonds and microcircuit components.1.6 The values stated in SI units are to be regarded as thestandard. The
7、 values given in parentheses are for informationonly.1.7 This standard does not purport to address all of thesafety concerns, if any, associated with its use. It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility o
8、f regulatory limitations prior to use.2. Referenced Documents2.1 ASTM Standards:3F 458 Practice for Nondestructive Pull Testing of WireBondsF 459 Test Methods for Measuring Pull Strength of Micro-electronic Wire Bonds2.2 NIST Documents:4NBS Handbook 105-1 Specification and Tolerances forReference St
9、andards and Field Standards, Weights andMeasuresIOLM Class M2-Circular 547-1 Precision Laboratory Stan-dards of Mass and Laboratory Weights2.3 Military Standard:5MIL-STD 883C, Method 20103. Terminology3.1 Definitions of Terms Specific to This Standard:3.1.1 ball lifta separation of the ball bond at
10、the bondingpad interface with little or no residual (less than 25 % of thebond deformation area) ball metallization remaining on thebonding pad (that remains essentially intact). In the case ofgold ball bonds on aluminum pad metallization, a ball lift isdefined as a separation of the ball bond at th
11、e bonding padinterface with little or no intermetallic formation either presentor remaining (area of intermetallic less than 25 % of the bonddeformation area).3.1.1.1 Discussionntermetallic refers to the aluminumgold alloy formed at the ball bond pad metallization interfacialarea where a gold ball b
12、ond is attached to an aluminum padmetallization.3.1.2 ball shear (weld interface separation)an appre-ciable intermetallic (in the case of the aluminum-gold system)and ball metallization, or both, (in the case of the gold-to-gold1These test methods are under the jurisdiction of ASTM Committee F01 onE
13、lectronics and is the direct responsibility of Subcommittee F01.07 on WireBonding.Current edition approved Jan. 1, 2006. Published February 2006. Originallyapproved in 1989. Last previous edition approved in 2001 as F 126989(2001).2Panousis, N. T., and Fischer, M. W., “Nondestructive Shear Testing o
14、f BallBonds, International Journal of Hybrid Microelectronics, Vol 6, No. 1, 1983, p.142.3For referenced ASTM standards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to the standards Document Summ
15、ary page onthe ASTM website.4Available from the National Technical Information Service, 5285 Port RoyalRd., Springfield, VA 22161.5Available from Standardization Documents Order Desk, Bldg. 4 Section D, 700Robbins Ave., Philadelphia, PA 19111-5094, Attn: NPODS.1Copyright ASTM International, 100 Barr
16、 Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.system) remains on the bonding pad (area of remaining metalor intermetallic greater than 25 % of the bond deformationarea).3.1.3 bonding pad lift (substrate metallization removal)aseparation between the bonding pad and the u
17、nderlying sub-strate. The interface between the ball bond and the residual padmetallization attached to the ball remains intact.3.1.4 crateringbonding pad lifts taking a portion of theunderlying substrate material with it. Residual pad and sub-strate material are attached to the ball. The interface
18、betweenthe ball and this residual material remains intact.3.1.4.1 DiscussionIt should be noted that cratering can becaused by several factors including the ball bonding operation,the post-bonding processing, and even the act of shear testingitself. If cratering occurs, chemically etch off the ball b
19、ondsand bond pads of untested units and microscopically check forcratering. Cratering caused prior to the shear test operation isunacceptable.Various aspects of the failure mode definitions are illustratedin Fig. 1.4. Summary of Test Methods4.1 The microelectronic device with the ball bond (wirebond
20、 (see Practice F 458 and Test Methods F 459) to be testedis held firmly in an appropriate fixture. A shearing ram ispositioned parallel to the substrate and approximately 25 m (1mil) above the substrate metallization. A typical shearingconfiguration is shown in Fig. 2. The ram is then moved intothe
21、ball until the ball separates from the substrate. The forceapplied to the ram, in order to cause the failure of the ball bond,is recorded. The mode of failure (for example, ball lift,weld-interface separation, cratering, etc.) is observed andrecorded.NOTE 2Bonds made with larger diameter wire may re
22、quire that theram be placed further above the substrate, but in all cases the ram shouldbe located below the balls horizontal centerline. The distance below thecenter should be at least half the distance between the center line and thesubstrate.NOTE 3Besides ball separation from the substrate, other
23、 modes offailure are possible and will be described in Section 6.5. Significance and Use5.1 Failure of microelectronic devices is often due to thefailure of an interconnection bond. A common type of inter-connection bond is the thermo compression or thermosonicgold wire bond. A very important elemen
24、t of this interconnec-tion is the first bond or ball bond. These test methods can assistin maintaining control of the process for making ball bonds.They can be used to distinguish between weak and nonadherentball bonds, of both, and bonds that are acceptably strong.5.2 These test methods are appropr
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