ARMY MIL-M-63530 (1)-1987 MICROCIRCUIT DIGITAL CMOS (LOGIC)《互补金属氧化物半导体(逻辑)数字微电路》.pdf

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1、.I MIL-M-b3530 (1) 13 979790b 0351B2 O M 3 -s/- /y - - - -I- MIL-M-63530 (AR) Amendment 1 21 August 1987 MfL-XTXRY SPECIFICATION MZCRW;tRCKIP DIGITAmendment .forras a part of Milftary Specification MIL-E-63530(LR)I datad -8 March 1382, and is approved for use within Che U.S. Army Armamsnt,Eiunitions

2、 and Chemical Command, and is available or use by all Departments and Agencies of the Department of Defense. PAGE 1 Preamble: Delete “Armament Research and Development Command“ and substitute “Armament, Munitions and Chemical Command.“ PAGE 2 3.4, Environmental and sechanical: Seal (Fine and gross):

3、 Delete “(A diatribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-LVD temperature mefZlcPents Sekte *4* 5.12“ and substitute “4.5. 17“ . NOTES, See page 2: Delete “groups a-f; 25 for group 4.“ and substitute “groups a-e; PS gor g

4、roup f.“. TABLE III, subgroup b: Seal (Tine leak$: Delete: “Method 8014, A“ and substitute “Method 1014, A or 3“. TABLE III, First Article fnspection subgroup e: Seal (fine leak): Delete: “Method 1014, A“ and substitute “Method 1014, A or B“. PAGE 13 4.4.2.1, MicrocCrcuit I Diga-kal, CMOS: Seal (fin

5、e leak): Delete “Method 1014, A“ and substitute “Method 1014, A or B“. Burn-in: Delete “4.5.17“ and substitute “4.5.23“. PAGE 17 4.4.3.4, Ggoup B testing: At end of paragraph add “(See MIL-H-38510 fog aerzective action)“ . 4.4.3.5, Group C tasting: At end of paragraph add “(See MIL-M-38510 or corteetive ackion). P3mE 38 .i;t sentence in its E iequence 17 as shown She current into Prepacing activity: i(3roject 1345-A474) Army-AR Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-