IEEE 857-1996 en Recommended Practice for Test Procedures for High-Voltage Direct- Current Thyristor Valves《高压直流半导体闸流管阀试验程序推荐规程》.pdf

《IEEE 857-1996 en Recommended Practice for Test Procedures for High-Voltage Direct- Current Thyristor Valves《高压直流半导体闸流管阀试验程序推荐规程》.pdf》由会员分享，可在线阅读，更多相关《IEEE 857-1996 en Recommended Practice for Test Procedures for High-Voltage Direct- Current Thyristor Valves《高压直流半导体闸流管阀试验程序推荐规程》.pdf（31页珍藏版）》请在麦多课文档分享上搜索。

1、The Institute of Electrical and Electronics Engineers, Inc.3 Park Avenue, New York, NY 10016-5997, USACopyright 1997 by the Institute of Electrical and Electronics Engineers, Inc.All rights reserved. Published 1997. Printed in the United States of America.IEEE is a registered trademark in the U.S. P

2、atent (508) 750-8400. Permission to photocopy portions of any individual standard foreducational classroom use can also be obtained through the Copyright Clearance Center.Note: Attention is called to the possibility that implementation of this standard may require use of subject matter covered by pa

3、tent rights. By publication of this standard, no position is taken with respect to the existence or validity of any patent rights in connection therewith. The IEEE shall not be responsible for identifying all patents for which a license may be required by an IEEE standard or for conducting inquiries

4、 into the legal validity or scope of those patents that are brought to its attention.iiiIntroduction(This introduction is not part of IEEE Std 857-1996, IEEE Recommended Practice for Test Procedures for High-Voltage Direct-Current Thyristor Valves.)This recommended practice was prepared by the Worki

5、ng Group I1, Power Electronic Equipment of the IEEE High-Voltage Power Electronics Stations Subcommittee. Working Group I1 was established in 1994 with the goal ofreaffirming or revising IEEE Std 857-1990 to conform with the five-year review cycle mandated by Article 1.4 of theIEEE Standards Board B

6、ylaws. To keep up with the advance of technology in the high-voltage direct-current (HVDC)industry and to attempt harmonization with an IEC standard (IEC700-1 ) that was under preparation, Working GroupI1 decided that IEEE Std 857-1990 , should be revised from a guide to a recommended practice.This

7、revised document achieved the goal of keeping up with the technology but only partially succeeded in theharmonization effort. While there were close communications and cooperation with the Chair of the IEC 22-FWorking Group 06, IEC procedures prevent any IEEE input to or discussion of the revision o

8、f IEC 700-1 . To theextent supported by technical justifications, this revised IEEE standard incorporated many changes proposed by IECmembers. At the time this document was reviewed and approved, the IEC revision was still under preparation. Furtherharmonization with the IEC 700-1 will be attempted

9、by several Working Group I1 members through their respectiverepresentatives on the IEC National Committee.As stated in the original IEEE Std 857-1990 , the purpose of this document is to complement other IEEE standards onHVDC power transmission systems and give guidance to the industry on how to tre

10、at the important subject of testinga thyristor valve that is a complex device. The tests recommended in this document cover only the principal electricaltests on the thyristor valves. This is not intended to be a comprehensive guide on valve testing because it does not havewithin its scope other val

11、ve tests, i.e., development tests, production sample tests, routine tests, loss determinationtests, commissioning tests, site tests. Further, material flammability tests were not included.Working Group I1, which prepared this revision, had the following membership at the time it was approved:C. Tim

12、Wu, Chair John J. Vithayathil, Vice Chair Michael H. BakerDon ChristieChris CoccioJeffrey DonahueP. C. S. KrishnayyaH. Peter LipsAl J. MolnarNiclas OttossonCarlos PeixotoMohamed RashwanMark ReynoldsShigeru TanabeDuane R. TorgersonGene Wolf The following persons were on the balloting committee:Willia

13、m J. AckermanS. J. ArnotMichael H. BakerLars A. BergstromDonald M. ChristieD. J. ChristofersenBen L. DamskyFrank A. DenbrockBruce W. DietzmanGary R. EngmannGerhard W. JuetteLawrence M. LaskowskiAlfred A. LeiboldH. Peter LipsJohn D. McDonaldA. P. Sakis MeliopoulosAl J. MolnarPhilip R. NanneryShashi G

14、. PatelR. J. PiwkoJakob SabathBodo SojkaRao ThallamDuane R. TorgersonJohn J. VithayathilC. Tim WuivWhen the IEEE Standards Board approved this recommended practice on 10 December 1996, it had the followingmembership:Donald C. Loughry, Chair Richard J. Holleman, Vice Chair Andrew G. Salem, Secretary

15、Gilles A. BarilClyde R. CampJoseph A. CannatelliStephen L. DiamondHarold E. EpsteinDonald C. FleckensteinJay Forster*Donald N. HeirmanBen C. JohnsonE. G. “Al” KienerJoseph L. Koepfinger*Stephen R. LambertLawrence V. McCallL. Bruce McClungMarco W. MigliaroMary Lou PadgettJohn W. PopeJose R. RamosArth

16、ur K. ReillyRonald H. ReimerGary S. RobinsonIngo RschJohn S. RyanChee Kiow TanLeonard L. TrippHoward L. Wolfman*Member EmeritusAlso included are the following nonvoting IEEE Standards Board liaisons:Satish K. Aggarwal Alan H. Cookson Chester C. TaylorSusan K. Tatiner, IEEE Standards Project EditorvC

17、LAUSE PAGE1. Scope.12. References.13. Definitions.24. Classification of tests 34.1 Dielectric tests 34.2 Operational tests. 45. Test requirements45.1 General 45.2 Valve temperature at testing 55.3 Treatment of redundancy for type tests 55.4 Selection of impulse test withstand voltage levels. 65.5 We

18、t type tests. 75.6 Criteria for successful type testing. 75.7 Suitability of valve for type test. 95.8 Partial discharge measurements . 95.9 Valve insensitivity to electromagnetic interference. 105.10 Test sequence . 116. Test program .116.1 Dielectric tests on valve base . 116.2 Dielectric tests on

19、 an MVU 146.3 Dielectric tests on a valve . 156.4 Operational tests on modules 197. Presentation of test results.22Annex A (informative) Bibliography .23Copyright 1997 IEEE All Rights Reserved 1IEEE Recommended Practice for Test Procedures for High-Voltage Direct-Current Thyristor Valves 1. ScopeThi

20、s recommended practice contains information and recommendations for the type testing of thyristor valves forhigh-voltage direct-current (HVDC) power transmission systems. Other equipment tests, such as development tests,production sample tests, routine tests, tests for the determination of losses, c

21、ommissioning tests, and site tests are notwithin the scope of this recommended practice. Furthermore, the tests given here cover the principal tests on the valvesonly and do not include tests of auxiliary equipment associated with the valves, such as cooling system components.This recommended practi

22、ce applies to any type of line-commutated indoor thyristor valve, with metal-oxide surgearresters connected between the valve terminals, used in converters for HVDC power transmission systems. Anymodifications to these tests and/or additional tests required for outdoor valves are to be considered se

23、parately.2. ReferencesThis recommended practice shall be used in conjunction with the following publications:IEEE Std 4-1995, IEEE Standard Techniques for High-Voltage Testing (ANSI).1 IEEE Std 100-1996, IEEE Standard Dictionary of Electrical and Electronics Terms. IEC 60060-1 (1989-11), High-voltag

24、e test techniquesPart 1: General definitions and test requirements.2 IEC60060-2 (1994-11), High-voltage test techniquesPart 2: Measuring systems. IEC 60071-1 (1993-11), Insulation co-ordinationPart 1: Definitions, principles and rules. 1IEEE publications are available from the Institute of Electrica

25、l and Electronics Engineers, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331, USA.2IEC publications are available from IEC Sales Department, Case Postale 131, 3, rue de Varemb, CH-1211, Genve 20, Switzerland/Suisse. IECpublications are also available in the United States from the Sales Depar

26、tment, American National Standards Institute, 11 West 42nd Street, 13thFloor, New York, NY 10036, USA.2 Copyright 1997 IEEE All Rights ReservedIEEE Std 857-1996 IEEE RECOMMENDED PRACTICE FOR TEST PROCEDURESIEC 60071-2 (1996-12), Insulation co-ordinationPart 2: Application guide. IEC 60099-4 (1991-11

27、), Surge arrestorsPart 1: Metal oxide surge arresters without gaps for a.c. systems. IEC 60146-1-1 (1991-04), General requirements and line commutated convertorsPart 11: Specifications of basicrequirements. IEC 60146-1-2 (1991-04), General requirements and line commutated convertorsPart 12: Applicat

28、ion guide. IEC 60146-1-3 (1991-04), General requirements and line commutated convertorsPart 13: Transformers andreactors. IEC 60146-2 (1974-01), Semiconductor convertorsPart 2: Semiconductor self-commutated convertors. IEC 60146-3 (1977-01), Semiconductor convertorsPart 3: Semiconductor direct d.c.

29、convertors (d.c. chopperconvertors). IEC 60146-4 (1986-09), Semiconductor convertorsPart 4: Method of specifying the performance and testrequirements of uninterruptible power systems. IEC 60146-5 (1988-11), Semiconductor convertorsPart 5: Switches for uninterruptible power systems (UPSswitches). IEC

30、 60146-6 (1992-12), Semiconductor convertorsPart 6: Application guide for the protection of semiconductorconvertors against overcurrent by fuses. IEC 60633 (1978-01), Terminology for high-voltage direct current transmission. IEC 60700 (1981-01), Testing of semiconductor valves for high-voltage d.c.

31、power transmission. IEC 60747-1 (1983-01), Semiconductor devicesDiscrete devicesPart 1: General. IEC 60747-5 (1992-05), Semiconductor devicesDiscrete devicesPart 5: Optoelectronic devices. IEC 60747-6 (1983-01), Semiconductor devicesDiscrete devicesPart 6: Thyristors. 3. DefinitionsDefinitions given

32、 in this recommended practice apply specifically to the testing of HVDC thyristor valves.3.1 failure of thyristor level: A thyristor level is deemed to have failed if it becomes short-circuited or in any otherway has degraded to the extent to make it functionally inoperative.3.2 multiple-valve unit

33、(MVU): A single structure comprising more than one valve.3.3 redundancy factor: The ratio of the total number of series thyristor levels in the valve, Nt, to the same numberminus the total number of redundant series thyristor levels in the valve, Nr. The redundancy factor, fr, is defined by(1)fr NtN

34、t Nr()-=Copyright 1997 IEEE All Rights Reserved 3FOR HIGH-VOLTAGE DIRECT-CURRENT THYRISTOR VALVES IEEE Std 857-19963.4 redundant thyristor levels: The maximum number of levels in the series string of thyristors in a valve that maybe short-circuited externally or internally during service without aff

35、ecting the safe operation of the valve asdemonstrated by type tests, and which, if and when exceeded, would require shutdown of the valve to replace the failedthyristors or acceptance of increased risk of failure of the valve.3.5 single-valve unit: A single structure comprising only one valve.3.6 te

36、st withstand voltage: The maximum value of a test voltage at which a new valve, with unimpaired integrity,does not show any disruptive discharge, nor suffer component failures above permissible levels, when subjected to aspecified number of applications of the test voltage, under specified condition

37、s.3.7 thyristor level: A single thyristor, or thyristors if the valve has parallel connected thyristors, and associatedcomponents for control, voltage grading, protection, and monitoring that constitute a single voltage level within thevalve.3.8 valve: A converter arm in a three-phase, 6-pulse bridg

38、e converter connection.3.9 valve base: The assembly that mechanically supports and electrically insulates the valves from ground.NOTE A part of a valve that is clearly identifiable in a discrete form to be a valve base may not exist in all designs of valves. Avalve base could be a separate platform

39、insulated from ground by post-type insulators that carries a live-tank valve unit,or a steel framework insulated from ground by post-type insulators on which the various modules of an MVU aremounted, or a raised platform of insulating material that is integral to the valve structure and forms the ba

40、se.3.10 valve module: The smallest assembly, comprising a number of thyristors and their immediate auxiliaries forfiring and protection, voltage-dividing components, and distributed or lumped valve reactors, from which the valve isbuilt up and which exhibits the same electrical properties as the com

41、plete valve but can withstand only a portion of thefull voltage-blocking capability of the valve.3.11 valve section: An electrical assembly comprising a number of thyristor levels and other components that exhibitsprorated electrical properties of a complete valve.4. Classification of testsThe type

42、tests described in this recommended practice are classified under two major categories: dielectric tests andoperational tests.4.1 Dielectric testsThese tests are intended to verify withstand and voltage-related characteristics of the valve under various overvoltageconditions. The following tests fal

43、l under this category:a) Dielectric tests on valve base1) DC voltage test2) AC voltage test3) Switching impulse test4) Lightning impulse test5) Steep-front impulse testb) Dielectric tests on an MVU1) DC voltage test2) Switching impulse test3) Lightning impulse test4) Steep-front impulse testc) Diele

44、ctric tests on a valve1) DC voltage test (dry and wet)2) AC voltage test4 Copyright 1997 IEEE All Rights ReservedIEEE Std 857-1996 IEEE RECOMMENDED PRACTICE FOR TEST PROCEDURES3) Switching impulse voltage test (dry and wet)4) Lightning impulse voltage test5) Steep-front impulse voltage test6) Nonper

45、iodic firing test7) Turn-on stress test4.2 Operational testsThese tests are intended to demonstrate the correct operation and capabilities of the valve under various operatingconditions, including the worst-case fault condition. The following tests fall under this category:a) Load test, including pe

46、riodic firing and extinction testb) Current-sharing testc) Minimum alternating voltage testd) Intermittent dc teste) Recovery period forward impulse withstand testf) Short-circuit current with subsequent blocking testg) Short-circuit current without subsequent blocking test5. Test requirements5.1 Ge

47、neral Thyristor valves are usually of modular construction with identical modules connected in series to obtain the requiredvalve voltage rating. This type of construction lends itself to simplifying the tests and the test equipment required.Great economy can be obtained when valve sections instead

48、of whole valves are used for type tests. However, certaindielectric tests must be performed on complete valves, as these tests relate to characteristics that are defined only aftera valve is completely built. All operational tests are carried out on valve sections. Simultaneous full-scale voltage an

49、dcurrent tests are not considered essential for thyristor valves.If a type test is conducted on valve sections rather than the whole valve, the minimum number of valve sections sotested should be equal to those in one complete valve. The preferred approach is for the valve section to be made up ofsingle or integer multiples of valve modules. If this is difficult because of limitations in the ratings of the available testcircuit, valve sections made up of thyristor levels fewer than those in complete module(s) may be used. The tes