DLA SMD-5962-97558 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL 8-INPUT POSITIVE-NAND GATES MONOLITHIC SILICON《8输入阳性与门晶体管硅单片电路数字双极微电路》.pdf
《DLA SMD-5962-97558 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL 8-INPUT POSITIVE-NAND GATES MONOLITHIC SILICON《8输入阳性与门晶体管硅单片电路数字双极微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-97558 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL 8-INPUT POSITIVE-NAND GATES MONOLITHIC SILICON《8输入阳性与门晶体管硅单片电路数字双极微电路》.pdf(12页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Replace reference to MIL-STD-973 with reference to MIL-PRF-38535. Add paragraph 4.4.1c. - ro 06-06-09 R.MONNIN REV SHET REV SHET REV STATUS REV A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY LARRY E. SHAW DEFEN
2、SE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY TUAN D. NGUYEN COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY RAY L. MONNIN AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 97-04-04 MICROCIRCUIT, DIG
3、ITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, 8-INPUT POSITIVE-NAND GATES, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-97558 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E369-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDA
4、RD MICROCIRCUIT DRAWING SIZE A 5962-97558 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space applicatio
5、n (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 97558
6、01 Q C X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels
7、 and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit func
8、tion as follows: Device type Generic number Circuit function 01 54AS30 8 input positive nand gates 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certificat
9、ion to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Desc
10、riptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device
11、 class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97558 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ S
12、upply voltage range (VCC) . 7.0 V dc Input voltage (VI) . 7.0 V dc Operating free-air temperature range . -55C to +125C Maximum power dissipation (PD) 616 mW Storage temperature range -65C to +150C Junction temperature (TJ) 150C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 1.4 Recomm
13、ended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Minimum high level input voltage (VIH) +2.0 V Maximum low level input voltage (VIL) +0.8 V Maximum high level output current (IOH) . -2 mA Maximum low level output current (IOL) +20 mA Case operating temperature rang
14、e (TC) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the soli
15、citation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT
16、OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbi
17、ns Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ T
18、he limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. Unused inputs must be held high or low. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAW
19、ING SIZE A 5962-97558 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in th
20、is document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the d
21、evice manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specif
22、ied herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in
23、 accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Test circuit and timing wavefor
24、ms. The test circuit and timing waveforms shall be as specified on figure 4. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I
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