DLA SMD-5962-96891 REV D-2006 MICROCIRCUIT MEMORY DIGITAL CMOS RADIATION-HARDENED 32K X 8-BIT PROM MONOLITHIC SILICON《抗辐射互补金属氧化物半导体32K X 8-BIT可编程序的只读存储器 硅单片电路数字记忆微电路》.pdf

《DLA SMD-5962-96891 REV D-2006 MICROCIRCUIT MEMORY DIGITAL CMOS RADIATION-HARDENED 32K X 8-BIT PROM MONOLITHIC SILICON《抗辐射互补金属氧化物半导体32K X 8-BIT可编程序的只读存储器 硅单片电路数字记忆微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96891 REV D-2006 MICROCIRCUIT MEMORY DIGITAL CMOS RADIATION-HARDENED 32K X 8-BIT PROM MONOLITHIC SILICON《抗辐射互补金属氧化物半导体32K X 8-BIT可编程序的只读存储器 硅单片电路数字记忆微电路》.pdf（22页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Updated boilerplate. Added device types 03 and 04 and CAGE 65342 as a source for those devices. Added package “Y“. Updated Table I, Table IIB, truth table and output load circuits for new device types. - glg 97-11-20 Raymond Monnin B Added device

2、s 05,06,07, and 08, added parameters and levels specific to the new devices. Updated boilerplate. ksr 04-05-25 Raymond Monnin C Added devices 09 and 10, added parameters and levels specific to the new devices. Updated boilerplate. ksr 06-06-06 Raymond Monnin D Added devices 11 and 12, added paramete

3、rs and levels specific to the new devices. ksr 06-07-07 Raymond Monnin REV SHET REV D D D D D SHEET 15 16 17 18 19 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gary L. Gross DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWI

4、NG CHECKED BY Jeff Bowling COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL APPROVED BY Raymond Monnin DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-09-06 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION- HARDENED, 32K x 8-BIT P

5、ROM, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-96891 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E531-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96891 DEFENSE SUPPLY CENTER

6、 COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes

7、 are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 96891 01 Q Y C Federal RHA Device Device Case Lead stock class desig

8、nator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device

9、class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 1/ Circuit funct

10、ion Access time 01 2/ BAEP2568C 32K X 8-bit radiation hardened PROM (CMOS inputs) 45 ns 02 2/ BAEP2568T 32K X 8-bit radiation hardened PROM (TTL inputs) 45 ns 03 28F256 32K X 8-bit radiation hardened PROM (TTL inputs) 45 ns 04 28F256 32K X 8-bit radiation hardened PROM (TTL inputs) 40 ns 05 28F256QL

11、 32K X 8-bit radiation hardened PROM (TTL inputs) 45 ns 06 28F256QL 32K X 8-bit radiation hardened PROM (TTL inputs) 40 ns 07 28F256QL 32K X 8-bit radiation hardened PROM (TTL inputs) 45 ns (with extended industrial temperature range -40C to +125C) 08 28F256QL 32K X 8-bit radiation hardened PROM (TT

12、L inputs) 40 ns (with extended industrial temperature range -40C to +125C) 09 28F256QLE 32K X 8-bit radiation hardened PROM (TTL inputs) 45 ns 10 28F256QLE 32K X 8-bit radiation hardened PROM (TTL inputs) 45 ns (with extended industrial temperature range -40C to +125C) 11 2/ BAEP2568C 32K X 8-bit ra

13、diation hardened PROM (CMOS inputs) 50 ns 12 2/ BAEP2568T 32K X 8-bit radiation hardened PROM (TTL inputs) 50 ns 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor s

14、elf-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outli

15、ne letter Descriptive designator Terminals Package style X CDFP3-F28 28 Flat pack Y CDIP2-T28 28 Dual-in-line 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also be listed in QML-38535 and MIL-HDBK-103 (see 6.6 herein)

16、. 2/ Device is available in an unprogrammed state only. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96891 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 A

17、PR 97 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 3/ Supply voltage range (devices 01, 02, 03, 04, 11, 12) . -0.5 V dc to +7.0 V dc (devices 05 through 10) -0.5 V dc to +

18、6.0 V dc Voltage on any pin with respect to ground . -0.5 V dc to VDD+0.5 V dc Maximum power dissipation (PD) . 1.5 W Lead temperature (soldering, 10 seconds maximum) +260C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Junction temperature (TJ). +175C Storage temperature range -65C to +

19、150C Temperature under bias (devices 01thru 06, 09, 11, 12) . -55C to +125C (devices 07, 08, 10) . -40C to +125C 1.4 Recommended operating conditions. Supply voltage (VDD) +4.5 V dc to +5.5 V dc Ground voltage (GND) . 0.0 V dc Input high voltage (VIH), Device 01, 11. +3.5 V dc minimum to VDDDevice 0

20、2, 12 +2.2 V dc minimum to VDDDevice 03 through 10 +2.4 V dc minimum to VDDInput Low voltage (VIL), Device 01, 11 . 0.0 V dc to +1.5 V dc maximum Device 02 through 10, 12 0.0 V dc to +0.8 V dc maximum Case operating temperature range (TC): (devices 01, 02, 03, 04, 05, 06, 09, 11, 12). -55C to +125C

21、(devices 07, 08, 10) . -40C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device 01, 02, 11, 12 200 KRads(Si) Device 03, 04, 05, 06, 09 1.0 MRads(Si) Device 07 and 08, 10 300 KRads(Si) Single event phenomenon (SEP) effective linear energy threshold (L

22、ET) with no upsets, Device 01, 02, 11, 12 120 MEV-cm2/mg Device 03 and 04 128 MEV-cm2/mg Device 05,06,07,08, 09, 10 . 57 MEV-cm2/mg with no latchup Device 05,06,07,08, 09, 10 . 110 MEV-cm2/mg Neutron irradiation 1 x 1014neutrons/cm24/ 1.6 Digital logic testing for device classes Q and V. Fault cover

23、age measurement of manufacturing logic tests (MIL-STD-883, test method 5012) 100 percent 3/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 4/ Guaranteed, but not tested. Pro

24、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96891 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification,

25、 standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 -

26、Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings

27、. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publicat

28、ions. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for the Measurement of

29、 Single Event Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS INDUSTRIES ASSOCIATION (EIA) J

30、EDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that p

31、repare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing

32、 in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in

33、 the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as

34、specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) s

35、hall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96891 DEFENSE SUPPLY CENTER COL

36、UMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.2.3 Truth table(s). The truth table shall be as specified on figure 2. 3.2.3.1 Unprogrammed devices. The truth table for unprogrammed devices shall be as specified on figure 2. When required in screening (see 4.2 herein

37、) or qualification conformance inspection, groups A, B, or C (see 4.4), the devices shall be programmed by the manufacturer prior to test. A minimum of 50 percent of the total number of cells shall be programmed. 3.2.3.2 Programmed devices. The requirements for supplying programmed devices are not a

38、 part of this drawing. 3.2.4 AC test circuit. The ac test circuit shall be as specified on figure 3. 3.2.5 Read cycle waveforms. The read cycle waveforms shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 5. 3.3 Electri

39、cal performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test req

40、uirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where

41、 marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PR

42、F-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in

43、 MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall b

44、e required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device

45、classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535,

46、appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects t

47、his drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the rev

48、iewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 42 (see MIL-PRF-38535, appendix A). 3.10.1 Unprogrammed device delivered to the user. All testing shall be verified through group A testing as defined in 3.2.3.1 and table I. It is recommended that users perform subgroups 7 and 9 after programming to verify the specific program configuration. Provided by IHSNot for ResaleNo reproduction o