DLA SMD-5962-96585 REV C-2013 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS 4-BIT BINARY FULL ADDER WITH FAST CARRY TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf
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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add limit for linear energy threshold (LET) with no latch-up in section 1.5. Update the boilerplate to the requirements of MIL-PRF-38535. Editorial changes throughout. TVN 06-04-25 Thomas M. Hess B Update boilerplate paragraphs and radiation para
2、graphs 4.4.4.1 4.4.4.4 to the current MIL-PRF-38535 requirements. - LTG 12-04-19 Thomas M. Hess C To correct switching waveforms input/output test limits to figure 4. Add test equivalent circuits and footnote 5 to figure 4. Add paragraph 2.2 for ASTM F1192 document. Delete class M requirements throu
3、ghout. - MAA 13-02-05 Thomas M. Hess REV SHEET REV C C SHEET 15 16 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Joseph A. Kerby DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT
4、DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Charles F. Saffle Jr. APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-BIT BINARY FULL ADDER WITH FAST CARRY, TTL COMPATIBLE INPUTS, MO
5、NOLITHIC SILICON DRAWING APPROVAL DATE 96-12-20 REVISION LEVEL C SIZE A CAGE CODE 67268 5962-96585 SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E191-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96585 DLA LA
6、ND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes a
7、re available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 96585 01 V X A Federal stock class designator RHA designator (see 1.2.1
8、) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-)
9、 indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACTS283 Radiation hardened, 4-bit binary full adder with fast carry, TTL compatible inputs 1.2.3 Device class designator. The device class
10、designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descrip
11、tive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-
12、STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96585 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD + 0.3 V dc DC output v
13、oltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction te
14、mperature (TJ) +175C Maximum power dissipation (PD) . 1.0 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD) +4.5 V dc to +5.5 V dc Input voltage range (VIN) 0.0 V dc to VDDOutput voltage range (VOUT). 0.0 V dc to VDDMaximum input rise or fall time at VDD= 4.5 V (tr, tf) 1 ns/V
15、 4/ Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. 5/ Maximum total dose available (dose rate = 50 300 rads (Si)/s) 1 x 106Rads (Si) Single event phenomenon (SEP): No SEU occurs at effective LET (see 4.4.4.4) . 80 MeV/(mg/cm2) 6/ No SEL occurs at effective LET (see 4.4
16、.4.4) 120 MeV/(mg/cm2) 6/ Dose rate upset (20 ns pulse) 1 x 109Rads (Si)/s Latch-up . None Dose rate survivability 1 x 1012Rads (Si)/s 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect r
17、eliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall apply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Derate system propagation delays by difference in r
18、ise time to switch point for tror tf 1 ns/V. 5/ Radiation testing is performed on the standard evaluation circuit. 6/ Limits obtained during technology characterization/qualification, guaranteed by design or process, but not production tested unless specified by the customer through the purchase ord
19、er or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96585 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government spec
20、ification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PR
21、F-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircui
22、t Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The follow
23、ing document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenom
24、ena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from: ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA 19428-2959.) 2.3 Order of precedence. In the event of a conflict between
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