DLA SMD-5962-96566 REV H-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED SYNCHRONOUS 4-BIT UP DOWN DUAL CLOCK COUNTER MONOLITHIC SILICON.pdf

《DLA SMD-5962-96566 REV H-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED SYNCHRONOUS 4-BIT UP DOWN DUAL CLOCK COUNTER MONOLITHIC SILICON.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96566 REV H-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED SYNCHRONOUS 4-BIT UP DOWN DUAL CLOCK COUNTER MONOLITHIC SILICON.pdf（29页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R129-97. 96-11-21 Monica L. Poelking B Incorporate Revision A. Update boilerplate to MIL-PRF-38535 requirements. LTG 01-12-03 Thomas M. Hess C Add appendix A. Editorial changes throughout. - LTG 04-06-21 Thomas

2、 M. Hess D Add device type 02 and 03. Update appendix A. - PHN 07-09-27 Thomas M. Hess E Change footnote 7 in section 1.5. - PHN 07-11-05 Thomas M. Hess F Add footnote 9/ to section 1.5 for device types 02 and 03. Add footnote 6/ to table IB for maximum device cross section. Delete table III, Irradi

3、ation test connections. - jak 08-05-07 Thomas M. Hess G Update radiation features in section 1.5 and SEP test limit in table IB. - MAA 10-11-15 Muhammad A. Akbar H Add equivalent test circuit and footnote 5 in figure 4. MAA 12-05-10 Thomas M. Hess REV SHEET REV H H H H H H H H H H H H H H SHEET 15 1

4、6 17 18 19 20 21 22 23 24 25 26 27 28 REV STATUS REV H H H H H H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thomas M. Hess DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Thomas M. H

5、ess THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, SYNCHRONOUS 4-BIT UP/DOWN DUAL CLOCK COUNTER, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-02-02 REVISIO

6、N LEVEL H SIZE A CAGE CODE 67268 5962-96566 SHEET 1 OF 28 DSCC FORM 2233 APR 97 5962-E289-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-96566 REVISION LEVE

7、L H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or I

8、dentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example 5962 H 96566 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designato

9、r Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535,

10、appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACS193 Radiation hardened, synchronous 4-bit

11、up/down dual clock counter 02 54ACS193E Enhanced, radiation hardened, synchronous 4-bit up/down dual clock counter 03 54ACS193E Enhanced, radiation hardened, synchronous 4-bit up/down dual clock counter 1.2.3 Device class designator. The device class designator is a single letter identifying the pro

12、duct assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Ca

13、se outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q an

14、d V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96566 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.3 Ab

15、solute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc DC input voltage range (VIN) -0.3 V dc to VDD+ 0.3 V dc DC output voltage range (VOUT) . -0.3 V dc to VDD+ 0.3 V dc DC input current, any one input (IIN). 10 mA Latch-up immunity current (ILU) 150 mA Storage temperatu

16、re range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC): Case outline E . See MIL-STD-1835 Case outline X . 15.5C/W Junction temperature (TJ) +175C Maximum package power dissipation (PD): Device type 01 1.0 W Device type 02 and 03, case

17、 outline X 3.3 W 4/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VDD): Device type 01 . +4.5 V dc to +5.5 V dc Device types 02 and 03 . +3.0 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VDD Maximum low level input voltage (VIL) 0.3 VDDMinimum high level input voltage

18、 (VIH) . 0.7 VDD Output voltage range (VOUT). +0.0 V dc to VDDCase operating temperature range (TC) . -55C to +125C Maximum input rise and fall time at VDD= 4.5 V (tr, tf) . 1 ns/V 5/ 1.5 Radiation features. Maximum total dose available: Device type 01 (dose rate = 50 300 rads (Si)/s) . 5 x 105Rads

19、(Si) Device type 02 (effective dose rate = 1 rad (Si)/s) 1 x 106Rads (Si) 6/ Device type 03 (dose rate = 50 300 rads (Si)/s) . 5 x 105Rads (Si) Single event phenomenon (SEP): Device type 01: Effective LET, no upsets (see 4.4.4.4) 80 MeV/(mg/cm2) 8/ 7/ Effective LET, no latch-up (see 4.4.4.4) 120 MeV

20、/(mg/cm2) 8/ 7/ Device types 02 and 03: Effective LET, no upsets (see 4.4.4.4) 108 MeV/(mg/cm2) 8/ 7/ Effective LET, no latch-up (see 4.4.4.4) 120 MeV/(mg/cm2) 8/ 7/ Dose rate upset (20 ns pulse) 1 x 109Rads (Si)/s 8/ 9/ Dose rate latch-up . None 8/ Dose rate survivability . 1 x 1012Rads (Si)/s 8/ 1

21、/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to VSS. 3/ The limits for the parameters specified herein shall a

22、pply over the full specified VDDrange and case temperature range of -55C to +125C unless otherwise specified. 4/ Per MIL-STD-883 method 1012.1 section 3.4.1, PD(Package) = (TJ (max) - TC(max) . JC5/ Derate system propagation delays by difference in rise time to switch point for tror tf 1 ns/V. 6/ De

23、vice type 02 is irradiated at dose rate = 50 - 300 rads (Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed to a maximum total dose specified. The effective dose rate after extended room temperature anneal = 1 rad (Si)/s per MIL-STD-883, method 1019, condition A, secti

24、on 3.11.2. 7/ Radiation testing is performed on the standard evaluation circuit. (SEC). 8/ Limits are guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. 9/ This limit is applicable for device type 01, 02, and 03 with VD

25、D 4.5 V. Device types 02 and 03 do not meet this limit at VDD 4.5 V Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96566 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 4 DSCC FORM 223

26、4 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or

27、contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HA

28、NDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA

29、19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM-F1192 - S

30、tandard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of this document is available online at http:/www.astm.org/ or from ASTM International, P. O. Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959). 2.3 O

31、rder of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1

32、 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as de

33、scribed herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specif

34、ied in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth

35、table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuits. The switching waveforms and test circuits shall be as specified on figure 4. Provided by IHSNot for ResaleNo reproduction o

36、r networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96566 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Irradiation test connections. The irradiation test connections shall be maintained by the manufactu

37、rer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradia

38、tion parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are described in table IA. 3.5 M

39、arking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For R

40、HA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for devi

41、ce classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed ma

42、nufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitte

43、d to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

44、 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For devi

45、ce class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritim

46、es agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices cover

47、ed by this drawing shall be in microcircuit group number 40 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96566 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVE

48、L H SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ 2/ -55C TC +125C unless otherwise specified Device type VDDGroup A subgroups Limits 3/ Unit Min Max High level input voltage VIH02, 03 3.0 V to 3.6 V 1, 2, 3 0.7 VDDV All 4.5 V to 5.5 V 1, 2, 3 0.7 VDDLow level input voltage VIL02, 03 3.0 V to 3.6 V 1, 2, 3 0.3 VDDV All 4.5 V to 5.5 V 1, 2, 3 0.3 VDDHigh level output voltage VOHFor all inputs affecting output under test, VIN= VDDor VSSIOH= -100 A 02, 03 3.0 V 1, 2, 3 VDD-0.25 V For all inputs affecting output under test, VIN= VD