DLA SMD-5962-90611 REV B-2006 MICROCIRCUITS MEMORY DIGITAL CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE MONOLITHIC SILICON《硅单片 TTL可兼容输入 电可擦可编程序只读存储器 高速氧化物半导体数字记忆微型电路》.pdf

《DLA SMD-5962-90611 REV B-2006 MICROCIRCUITS MEMORY DIGITAL CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE MONOLITHIC SILICON《硅单片 TTL可兼容输入 电可擦可编程序只读存储器 高速氧化物半导体数字记忆微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-90611 REV B-2006 MICROCIRCUITS MEMORY DIGITAL CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE MONOLITHIC SILICON《硅单片 TTL可兼容输入 电可擦可编程序只读存储器 高速氧化物半导体数字记忆微型电路》.pdf（17页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R166-92 92-03-30 Michael A. Frye B Boilerplate update, part of 5 year review. ksr 06-12-11 Raymond Monnin THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV B B SHET 15 16 REV STATUS REV B

2、 B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY James E. Jamison DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Kenneth Rice COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS

3、 APPROVED BY Michael A. Frye AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 91-01-21 MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON SIZE A CAGE CODE 67268 5962-90611 AMSC N/A REVISION LEVEL B SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E01

4、2-07 .Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes d

5、evice requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-90611 01 X A Drawing number Device type (see 1.2.1) Case outline(see 1.2.2

6、) Lead finish(see 1.2.3)1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 1/ Circuit function tPD01 32-Macrocell EPLD 35 ns 02 32-Macrocell EPLD 25 ns 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follo

7、ws: Outline letter Descriptive designator Terminals Package style X GDIP4-T28 or CDIP3-T28 28 dual-in-line package 2/ Y GQCC1-J28 28 J leaded chip carrier package 2/ 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Supply voltage to groun

8、d potential-2.0 V dc to +7.0 V dc DC input voltage .-2.0 V dc to +7.0 V dc Maximum power dissipation 3/.1.5 W Lead temperature (soldering, 10 seconds)+260C Thermal resistance, junction-to-case (JC): Cases X and Y See MIL-STD-1835 Junction temperature (TJ) .+175C Storage temperature range .-65C to +1

9、50C Temperature under bias-55C to +125C Endurance.25 erase/write cycles (minimum) Data retention .10 years, (minimum) 1.4 Recommended operating conditions. Supply voltage (VCC) .+4.5 V dc to +5.5 V dc Ground voltage (GND) 0 V dc Input high voltage (VIH)2.2 V dc minimum Input low voltage (VIL) .0.8 V

10、 dc maximum Operating case temperature range (TC)-55C to +125C 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also be listed in MIL-HDBK-103. 2/ Lid shall be transparent to permit ultraviolet light erasure. 3/ Must wit

11、hstand the added PDdue to short circuit test; (e.g., IOS). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 223

12、4 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or

13、contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE H

14、ANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, B

15、uilding 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific e

16、xemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML

17、) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as doc

18、umented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-385

19、35 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 he

20、rein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth tables. The truth tables shall be as specified on figure 2. 3.2.3.1 Unprogrammed or erased devices. The truth table for unprogrammed devices for contracts involving no altered item drawing shall

21、 be as specified on figure 2. When required in groups A, B, C, or D (see 4.3), the devices shall be programmed by the manufacturer prior to test. A minimum of 50 percent of the total number of cells shall be programmed or at least 25 percent of the total number of cells to any altered item drawing.

22、3.2.3.2 Programmed devices. The truth table for programmed devices shall be as specified by an attached altered item drawing. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the

23、 full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without licen

24、se from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part shall be marked with the PIN listed in 1.2 here

25、in. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. 3.5.1 Certification/compliance mark. A compliance indicator “C” shall

26、 be marked on all non-JAN devices built in compliance to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 to identify when the QML flow option is used. 3.6 Certificate of compliance. A certificate of com

27、pliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply shall affirm that the manufacturers product meets the requirements

28、 of MIL-PRF-38535, appendix A and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DSCC-VA s

29、hall be required for any change that affects this drawing. 3.9 Verification and review. DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of

30、the reviewer. 3.10 Processing EPLDs. All testing requirements and quality assurance provisions herein shall be satisfied by the manufacturer prior to delivery. 3.10.1 Erasure of EPLDs. When specified, devices shall be erased in accordance with the procedures and characteristics specified in 4.4 here

31、in. 3.10.2 Programmability of EPLDs. When specified, devices shall be programmed to the specified pattern using the procedures and characteristics specified in 4.5 herein. 3.10.3 Verification of erasure of programmed EPLDs. When specified, devices shall be verified as either programmed to specified

32、program or erased. As a minimum, verification shall consist of performing a functional test (subgroup 7) to verify that all bits are in the proper state. Any bit that does not verify to be in the proper state shall constitute a device failure, and shall be removed from the lot. 3.11 Endurance. A rep

33、rogrammability test shall be completed as part of the vendors reliability monitors. This reprogrammability test shall be done only for initial characterization and after any design or process changes which may affect the reprogrammability of the device. The methods and procedures may be vendor speci

34、fic, but will guarantee the number of program/erase endurance cycles listed in section 1.3 herein. The vendors procedure shall be under document control and shall be made available upon request. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance wi

35、th MIL-PRF-38535, appendix A. 4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition

36、 C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance wit

37、h the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. Provided by IHSNot fo

38、r ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 c. A data retention stress test shall be included as part of the screen

39、ing procedure and shall consist of the following steps: (Steps 1 through 4 may be performed at the wafer level. The maximum storage temperature shall not exceed 200C for packaged devices and 300C for unassembled devices.) Margin test method. (1) Program a minimum of 95% of the total number of cells,

40、 including the slowest programming cell (see 3.10.2). (2) Bake, unbiased, for 72 hours at +140C, or for 48 hours at +150C, or for 8 hours at +200C, or for unassembled devices only 2 hours at 300C. (3) Perform electrical test (see 4.2b) at 25 including a margin test at Vm = 5.7 V and loose timing (i.

41、e., = 1 s). (4) Erase (see 3.10.1). (5) Program a minimum of 50 percent of the total number of cells, including the slowest programming cell (see 3.10.2). (6) Perform electrical test (see 4.2b) at 25 including a margin test at Vm = 5.7 V and loose timing (i.e., = 1 s). (7) Perform burn-in (see 4.2a)

42、. (8) Perform electrical test (see 4.2b) at 25 including a margin test at Vm = 5.7 V and loose timing (i.e., = 1 s). (9) Repeat step 8 at tC= +125C and -55C. (10) Erase (see 3.10.1). Devices may be submitted for groups A, C, and D testing prior to erasure provided the devices have been 100 percent s

43、eal tested in accordance with method 5004 of MIL-STD-883. (11) Verify erasure (see 3.10.3). 4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 5005 of MIL-STD-883 including groups A, B, C, and D inspections. The following additional criteria shall a

44、pply. 4.3.1 Group A inspection. a. Tests shall be as specified in table II herein. b. Subgroups 5, and 6 in table I, method 5005 of MIL-STD-883 shall be omitted. c. Subgroup 4 (CINand COUTmeasurement) shall be measured only for initial qualification and after any process or design changes which may

45、affect input or output capacitance. Capacitance shall be measured between the designated terminal and GND at a frequency of 1 MHz. Sample size is 15 devices with no failures, and all input and output terminals tested. d. See footnote 4/ of table II. e. All devices selected for testing shall be progr

46、ammed per 3.2.3.1 herein. 4.3.2 Groups C and D inspections. a. End-point electrical parameters shall be as specified in table II herein. b. Steady-state life test conditions, method 1005 of MIL-STD-883. (1) The devices selected for testing shall be programmed per 3.2.3.1 herein. After completion of

47、testing, the devices shall be erased and verified (except devices submitted for group D testing). (2) Test condition C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request.

48、 The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. (3) TA= +125C, minimum. (4) Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. Provided by IHSNot for

49、ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90611 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TC+125C 4