DLA SMD-5962-06232-2006 MICROCIRCUIT DIGITAL RADIATION HARDENED SPACEWIRE PHYSICAL LAYER TRANSCEIVER MONOLITHIC SILICON《硅单片SPACEWIRE空间应用网络结构物理层收发器 耐辐射数字微型电路》.pdf

《DLA SMD-5962-06232-2006 MICROCIRCUIT DIGITAL RADIATION HARDENED SPACEWIRE PHYSICAL LAYER TRANSCEIVER MONOLITHIC SILICON《硅单片SPACEWIRE空间应用网络结构物理层收发器 耐辐射数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-06232-2006 MICROCIRCUIT DIGITAL RADIATION HARDENED SPACEWIRE PHYSICAL LAYER TRANSCEIVER MONOLITHIC SILICON《硅单片SPACEWIRE空间应用网络结构物理层收发器 耐辐射数字微型电路》.pdf（24页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV SHET REV SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Charles F. Saffle DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles F. Saffle COLUMBUS,

2、 OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Thomas M. Hess MICROCIRCUIT, DIGITAL, RADIATION HARDENED, SPACEWIRE PHYSICAL LAYER AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 06-07-06 TRANSCEIVER, MONOLITHIC SILICON AMSC N/

3、A REVISION LEVEL - SIZE A CAGE CODE 67268 5962-06232 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E499-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06232 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-

4、3990 REVISION LEVEL SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected

5、in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 06232 01 Q X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device

6、 class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the

7、MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 UT200SpWPHY01 SpaceWire physical

8、 layer transceiver 02 UT200SpWPHY01 SpaceWire physical layer transceiver, extended industrial temperature range 1/ 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor

9、 self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Out

10、line letter Descriptive designator Terminals Package style X See figure 1. 28 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. _ 1/ Device type 02 has an extended industrial temperature range of

11、-40C to +125C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06232 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supp

12、ly voltage range (VDD) -0.3 V dc to 4.0 V dc Voltage on any pin during operation (VI/O) . -0.3 V dc to (VDD+ 0.3 V) Voltage on any pin during cold spare (VI/O) -0.3 V dc to 4.0 V dc DC input current (II) . 10 mA Maximum power dissipation (PD) . 120 mW Thermal resistance, junction-to-case (JC). 10C/W

13、 Storage temperature range (TSTG) . -65C to +150C 1.4 Recommended operating conditions. Supply voltage range (VDD) 3.0 V dc to 3.6 V dc DC input voltage range (VIN) 0 V dc to VDD1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s). 100 krads(Si) Single event latchup (

14、SEL) 110 MeV-cm2/mg Single event upset (SEU) saturated cross-section (sat) 2.9E-8 cm2/device Onset single event upset (SEU) linear energy threshold (LET), no upset 38 MeV-cm2/mg Neutron fluence . 1 x 1014neutrons/cm22/ Dose rate upset . 3/ Dose rate survivability 3/ 2. APPLICABLE DOCUMENTS 2.1 Gover

15、nment specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICAT

16、ION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard M

17、icrocircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

18、2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses

19、above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Guaranteed, but not tested. 3/ When characterized as a result of procuring activities request, the condition will be specified. Prov

20、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06232 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual it

21、em requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item r

22、equirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for d

23、evice classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table sha

24、ll be as specified on figure 3. 3.2.4 Functional block diagram. The functional block diagram shall be as specified on figure 4. 3.2.5 Timing waveforms and test circuit. The timing waveforms and test circuit shall be as specified on figures 5 through 12. 3.2.6 Radiation exposure circuit. The radiatio

25、n exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the e

26、lectrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tes

27、ts for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the opt

28、ion of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certificati

29、on/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of comp

30、liance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.

31、6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL

32、-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of c

33、hange for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the

34、acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing

35、 shall be in microcircuit group number 77 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06232 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 5

36、DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions VDD= 3.3 V 0.3 V -55C TC +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max DC Electrical Characteristics 1/ High-level input voltage (CMOS) VIH2.0 V Low-level input voltage

37、 (CMOS) VIL0.8 V Low-level output voltage (LVCMOS) VOLIOL= 12mA 0.4 V High-level output voltage (LVCMOS) VOHIOH= -12mA 2.4 V Input leakage current (LVCMOS) IINCMOSVIN= VDDor GND, VDD= 3.6 V -10 +10 A Input leakage current (LVDS) IINLVDSVIN= VDDor GND, VDD= 3.6 V -20 +20 Cold spare leakage current (L

38、VDS pins) ICSVIN= 3.6 V, VDD= VSS= 0 V -20 +20 A Differential input high threshold VTHVCM= +1.2 V +100 mV Differential input low threshold VTLVCM= +1.2 V -100 mV Differential output voltage VODRL= 100 250 400 mV Change in magnitude of VODfor complimentary output states VODRL= 100 35 mV Offset voltag

39、e VOSRL = 100, (VOS= (VOH+ VOL)/2) 1.125 1.450 V Change in magnitude of VOSfor complimentary output states VOSRL= 100 25 mV LVDS output three-state current IOZTxOE = GND, VOUT= 0 V or VDD, VDD= 3.6 V -10 +10 A Loaded supply current, drivers enabled ICCLRL= 100 all channels, running in full duplex VI

40、N= VDDor VSS(all inputs) CL= 35 pF, f = 200 MHz 1, 2, 3 All 120 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-06232 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990

41、 REVISION LEVEL SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Conditions VDD= 3.3 V 0.3 V -55C TC +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max DC Electrical Characteristics - Continued 1/ Loaded supply cu

42、rrent, drivers disabled ICCZDIN= VDDor VSS, Clock and Data not toggling. 10 mA Supply current, data toggling, clocks running, device and standby ICCIClock at 200 MHz, TxOE = 0 Data at 200 Mbits/sec, RST = 0 1, 2, 3 25 mA LVCMOS input capacitance CIN2/ f = 1 MHZ at 0 V 7 pF LVCMOS output capacitance

43、COUT2/ f = 1 MHZ at 0 V 15 pF LVDS input capacitance CINLVDS2/ f = 1 MHZ at 0 V 6 pF LVDS output capacitance COUTLVDS2/ f = 1 MHZ at 0 V 4 7 pF Functional tests See 4.4.1b 7, 8 All AC Switching Characteristics TxCLK to differential Data output low to high propagation delay tCDLHRL= 50, CL= 37 pF See

44、 figure 5. 2 4 ns TxCLK to differential Data output high to low propagation delay tCDHLRL= 50, CL= 37 pF See figure 5. 2 4 ns TxCLK to differential Strobe output low to high propagation delay tCSLHRL= 50, CL= 37 pF See figure 5. 2 4 ns TxCLK to differential Strobe output high to low propagation dela

45、y tCDHLRL= 50, CL= 37 pF See figure 5. 2 4 ns Differential channel skew tDCS0.4 ns Channel to channel skew tCCS9, 10, 11 All 0.5 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 59

46、62-06232 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Conditions VDD= 3.3 V 0.3 V -55C TC +125C unless otherwise specified Group A subgroups Device type Limits Unit Min

47、Max AC Switching Characteristics - Continued Rise time LVDS driver tTLH3/ RL= 100, CL= 37 pF See figure 5. 1.5 ns Fall time LVDS driver tTHL3/ RL= 100, CL= 37 pF See figure 5. 1.5 ns Output enable low to Data or Strobe high to Z tOEHZRL= 50, CL= 37 pF See figures 6 and 7. 5 ns Output enable low to D

48、ata or Strobe low to Z tOELZRL= 50, CL= 37 pF See figures 6 and 7. 5 ns Output enable high to Data or Strobe Z to high tOEZHRL= 50, CL= 37 pF See figures 6 and 7. 5 ns Output enable high to Data or Strobe Z to low tOEZLRL= 50, CL= 37 pF See figures 6 and 7. 5 ns Minimum required setup of Data or Strobe with respect to WrClk tSETUP TXSee figure 8. 2 ns Minimum required hold of Data or Strobe with respect to WrClk tHOLD TXSee figure 8. 0 ns Maximum rise time into Data/Strobe inputs tINRISE4/ 0.8 V to 2.0 V See figure 9. 14 % of bit width Maximum fall ti