DLA MIL-PRF-19500 526 H-2012 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPE 2N3879 JAN JANTX AND JANTXV.pdf

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1、 MIL-PRF-19500/526H 2 November 2012 SUPERSEDING MIL-PRF-19500/526G 25 January 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3879, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of De

2、fense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for each de

3、vice type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-66). 1.3 Maximum ratings. (TA= +25C, unless otherwise specified). PT(1) TC= +25C RJCVCBOVCEOVEBOIBICTJand TSTGW 35 C/W 5 V dc 120 V dc 75 V dc 7 A dc 5 A dc 7 C -65 to +200 (1) Derate linearly 200 mW/C for TC +25C. AM

4、SC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this add

5、ress information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 2 February 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,

6、-,-MIL-PRF-19500/526H 2 1.4 Primary electrical characteristics. hFE1(1) hFE2(1) VBE(SAT)1VCE(SAT)1Cobo|hfe| Switching (see table I and figure 2 herein) VCE = 5.0 V dc IC= 0.5 A dc VCE = 5.0 V dc IC= 4.0 A dc IC= 4.0 A dc IB= 0.4 A dc IC= 4.0 A dc IB= 0.4 A dc VCB= 10 V dc IE= 0 0.1 MHz f 1 MHz VCE =

7、 10 V dc IC= 500 mA dc f = 10 MHz tontoffMin Max 40 20 80 V dc 2.0 V dc 1.2 pF 175 4 20 s 0.44 s 1.2 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents c

8、ited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of th

9、is specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents ar

10、e those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assi

11、st.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document

12、and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

13、MIL-PRF-19500/526H 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Body contour is optional within zone defined by CD and PS1. 4. These dimensions should be measured at points .050 inch (1.27 mm) .055 inch (1.40 mm) below seating plane. When gauge is n

14、ot used measurement will be made at the seating plane. 5. Both terminals. 6. At both ends. 7. Two holes. 8. The collector is electrically connected to the case. 9. LD applies between L1and LL. Lead diameter shall not exceed twice LD within L1. 10. In accordance with ASME Y14.5M, diameters are equiva

15、lent to x symbology. FIGURE 1. Physical dimensions (TO-66). Symbol Dimensions Notes Inches Millimeters Min Max Min Max CD .470 .500 11.94 12.70 3,10 CH .250 .340 6.35 8.64 HR .350 8.89 HT .050 .075 1.27 1.91 HR1 .115 .145 2.92 3.68 8 LD .028 .034 0.71 0.86 3,7,10 LL .360 .500 9.14 12.70 3,9 L1 .050

16、1.27 9 MHD .142 .152 3.61 3.86 7,10 MHS .958 .962 24.33 24.43 PS .190 .210 4.83 5.33 4 PS1 .093 .107 2.36 2.72 4 S .570 .590 14.48 14.99 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/526H 4 3. REQUIREMENTS 3.1 General. The individual

17、item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list be

18、fore contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figu

19、re 1. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical pe

20、rformance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be pro

21、cessed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4

22、.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In ca

23、se qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualifi

24、cation. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/526H 5 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be

25、made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.2). 9 ICEX1. 11 hFE2; ICEX1; ICEX1= 100 percent of initial value or 2 A dc,

26、 whichever is greater. 12 See 4.3.1. 13 Subgroup 2 of table I herein. ICEX1= 100 percent of initial value or 2 A dc, whichever is greater. hFE2= 25 percent of initial value. (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirement

27、s. 4.3.1 Power burn-in. Power burn-in conditions are as follows: TJ= +187.5C, 12.5C; VCB= 10 - 30 V dc; TA= room ambient as defined in the general requirements of 4.5 of MIL-STD-750. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions,

28、TJ, and mounting conditions) shall be used. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. 4.3.2 Thermal impedance. The thermal impedance measurements shall

29、 be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be i

30、n accordance with MIL-PRF-19500 and as specified herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/526H 6 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. End-poi

31、nt electrical measurements shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in 4.4.2 for JAN, JANTX, and JANTXV group B testing. Separate samples may be u

32、sed for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new assembly lot option is exercised, the failed assembly lot shall be scrapped. Electrical mea

33、surements (end-points) shall be in accordance with table I, subgroup 2 herein. Step Method Condition 1 1026 Steady-state life: Test condition B, 1,000 hours minimum, VCB= 10 V dc, power shall be applied to the device to achieve TJ= +150C minimum; n = 45, c = 0. 2 1048 Blocking life, TA= +150C, VCB=

34、80 percent of rated voltage, 48 hours minimum. n = 45, c = 0. 3 1032 High-temperature life (non-operating),TA= +200C, t = 340 hours, n = 22, c = 0. 4.4.2.1 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV s

35、amples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. See MIL-PRF-19500. b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. When the final lead finish is solder,

36、or any plating prone to oxidation at high temperature, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup

37、testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Test condition A; weight = 10 pounds; t = 15 s. C5 3131 See 4.3.2, RJC= 5C/W. C6 Not applicable. Provided by IHSNot for ResaleNo rep

38、roduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/526H 7 4.4.3.1 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any lot containing the intended package type and lead finish procured to the same specification which is submitted to

39、and passes table I tests herein for conformance inspection. When the final lead finish is solder, or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish. Testing of a subgroup using a single device type enclosed

40、 in the intended package type shall be considered as complying with the requirements for that subgroup. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein.

41、 Electrical measurements (end- points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section

42、 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/526H 8 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 2/ Visual and mechanical 3/ examination 2071 Sold

43、erability 3/ 2026 Resistance to 3/ 4/ solvent 1022 Temp cycling 3/ 1051 Test condition C, 25 cycles Hermetic seal Fine leak Gross leak 1071 Electrical measurements Table I, subgroup 2 Bond strength 3/ 2037 Pre-condition TA= +250C at t = 24 hours or TA= +300C at t = 2 hours, n = 11 wires, c = 0 Decap

44、 internal visual 2075 n = 4, c = 0 Subgroup 2 Thermal impedance 5/ 3131 See 4.3.2 ZJXC/W Breakdown voltage, collector to emitter 3011 Bias condition D; IC= 200 mA dc; pulsed (see 4.5.1) V(BR)CEO75 V dc Collector to emitter cutoff current 3041 Bias condition D; VCE= 50 V dc ICEO5 mA dc Collector to e

45、mitter cutoff current 3041 Bias condition A; VCE= 100 V dc; VBE= 1.5 V dc ICEX110 A dc Emitter to base cutoff current 3061 Bias condition D; VEB= 7 V dc IEBO10 mA dc Collector to base cutoff current 3036 Bias condition D; VCB= 120 V dc ICBO10 A dc Base emitter voltage (nonsaturated) 3066 Test condit

46、ion B; IC= 4.0 A dc; VCE= 2.0 V dc; pulsed (see 4.5.1) VBE1.8 V dc Base emitter voltage (saturated) 3066 Test condition A; IC= 4.0 A dc; IB= 0.4 A dc; pulsed (see 4.5.1) VBE(SAT)2.0 V dc Collector to emitter saturated voltage 3071 IC= 4.0 A dc; IB= 0.4 A dc; pulsed (see 4.5.1) VCE(SAT)1.2 V dc See f

47、ootnotes at end of table. * * * * * * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/526H 9 * TABLE I. Group A inspection - Continued. Inspection 1/ Symbol Limits Unit Method Conditions Min Max Subgroup 2 continued Forward-current tran

48、sfer ratio 3076 VCE= 5.0 V dc; IC= 0.5 A dc; pulsed (see 4.5.1) hFE140 Forward-current transfer ratio 3076 VCE= 5.0 V dc; IC= 4.0 A dc; pulsed (see 4.5.1) hFE220 80 Forward-current transfer ratio 3076 VCE= 2.0 V dc; IC= 4.0 A dc; pulsed (see 4.5.1) hFE312 100 Subgroup 3 High temperature operation: C

49、ollector to emitter cutoff current 3041 TA= +150C Bias condition A; VCE= 100 V dc; VBE= 1.5 V dc ICEX2750 A dc Low temperature operation: Forward-current transfer ratio 3076 TA= -55C VCE= 5.0 V dc; IC= 0.5 A dc; pulsed (see 4.5.1) hFE410 Subgroup 4 Pulse response 3251 Test condition A except test circuit and pulse re