DLA MIL-PRF-19500 469 D-2008 SEMICONDUCTOR DEVICE SILICON HIGH-POWER SINGLE PHASE FULL WAVE BRIDGE RECTIFIER TYPES M19500 469-01 -02 -03 -04 -05 JANTX AND JANTXV《大功率单相硅半导体器件全波长桥式整流.pdf

《DLA MIL-PRF-19500 469 D-2008 SEMICONDUCTOR DEVICE SILICON HIGH-POWER SINGLE PHASE FULL WAVE BRIDGE RECTIFIER TYPES M19500 469-01 -02 -03 -04 -05 JANTX AND JANTXV《大功率单相硅半导体器件全波长桥式整流.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 469 D-2008 SEMICONDUCTOR DEVICE SILICON HIGH-POWER SINGLE PHASE FULL WAVE BRIDGE RECTIFIER TYPES M19500 469-01 -02 -03 -04 -05 JANTX AND JANTXV《大功率单相硅半导体器件全波长桥式整流.pdf（13页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/469D 10 September 2008 SUPERSEDING MIL-PRF-19500/469C 4 April 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, SINGLE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES M19500/469-01, -02, -03, -04, -05, JANTX AND JANTXV This specification is approved for use by a

2、ll Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, single phase, full wave bridge re

3、ctifiers, intended for use in applications at frequencies of 1 kHz or less. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1. 1.3 Maximum ratings. Unless otherwise specified TA= +25C. M19500/469- VRWM Bridge (1) IO

4、1at TC= +55C Bridge (2) IO2at TC= +100C IF(surge) IO= 10 A dc TC= +55C tp= 8.3 ms Barometric pressure reduced 01 02 03 04 05 V (pk) 200 400 600 800 1,000 A dc 10 10 10 10 10 A dc 6 6 6 6 6 A (pk) 100 100 100 100 100 mm Hg 8 8 8 33 33 (1) Derate from 10 A dc at +55C to 6 A dc at +100C (88 mA dc/C). (

5、2) Derate from 6 A dc at +100C to 0 A dc at +150C (120 mA dc/C), trr= 2.5 s at IF= 0.5 A, IR= 1.0 A, Irec= 0.25 A. Operating temperature: -65C to +150C. Storage ambient temperature: -65C to +150C. AMSC N/A FSC 5961 INCH-POUND The documentation and process conversion measures necessary to comply with

6、 this revision shall be completed by 10 December 2006. Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductordscc.dla.mil. Since contact information can change, y

7、ou may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/469D 2 Dimensions Ltr Inches Millimeters Min Max Min Max C1.36

8、7 .375 9.32 9.53 C2.350 .450 8.89 11.43 C3.175 .225 4.45 5.72 D1.139 .149 3.53 3.78 D2.091 .101 2.31 2.57 D3.066 .076 1.68 1.93 H1.570 14.48 H2.370 9.40 L1.088 .098 2.24 2.49 L2.020 .030 0.51 0.76 W .735 .750 18.67 19.05 * FIGURE 1. Physical dimensions. NOTES: 1. Dimensions are in inches. 2. Millime

9、ters are given for general information only. 3. Polarity shall be marked on the bridge body adjacent to terminals. Terminal numbers are for reference and are not required to be marked on the bridge; however, terminal 1 shall be indicated by a mechanical index such as a line or flattened corner, visi

10、ble from the top (terminal surface) of the device. 4. Point at which TCis read shall be in metal part of case as shown on drawing. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS

11、-,-,-MIL-PRF-19500/469D 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as exampl

12、es. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, s

13、tandards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 -

14、 Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order D

15、esk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. SOCIE

16、TY OF AUTOMOTIVE ENGINEERS (SAE) AS39029/57 - Contacts, Electrical Connectors, Socket Crimp Removable (For MIL-C-24308, MIL-C-38999 Series II, MIL-C-55302/68, /71, /72, /75 and MIL-C-83733 Connectors) (Application for copies should be addressed to the Society Of Automotive Engineers, SAE World Headq

17、uarters, 400 Commonwealth Drive, Warrendale, PA 15096-0001 or http:/www.sae.org). * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or

18、 specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as

19、 modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations,

20、symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: n - - number of diodes for each leg 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 herein. Provided by IHSNot for ResaleNo repr

21、oduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/469D 4 3.4.1 Internal construction. The rectifier bridge shall consist of a metal and plastic encased assembly of single or parallel discrete diodes. Each discrete diode shall be a glass-to-metal, ceramic-to-metal, or fused

22、metal oxide-to-metal hermetically sealed package. The silicon die in each discrete diode shall be metallurgically bonded directly to the terminal pins. The completed assembly of diodes and other internal structures shall be encapsulated in a plastic material which polymerizes to a rigid condition by

23、 virtue of a chemical cross-linking mechanism. The rectifier bridge shall be free of voids either visible or as evidenced by failure to pass the environment test specified. Only those discrete diodes which have met these requirements shall be used in the rectifier bridge. Discrete diodes shall be JA

24、NTX or JANTXV level devices, or equivalent screened non-JAN devices manufactured in a MIL-PRF-19500 certified facility. Parallel diodes may be utilized in construction of this device. 3.4.1.1 Internal devices. Devices used in the construction of this assembly shall be subject to the requirements of

25、4.3.1 with qualification of non-JAN parts performed at the assembly level. 3.4.2 Terminal finish. Terminal finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of terminal finish is desired, it shall be specified in the acquisition document (see 6.2).

26、3.4.3 Parallel diode construction. For bridge design that employs more than one diode per leg and n equals the number of diodes per leg, the following matching conditions shall be approved by the qualifying activity. a. Individual diode VFmatching at least the minimum rated room temperature IO. The

27、VFshall be to within 20 mV on each diode. b. Thermal impedance matching. c. Similar diode families types shall be utilized. d. Care shall be utilized in the design to ensure similar lead lengths and uniform heat paths, so that all diodes in each leg are at similar temperatures. 3.5 Marking. Marking

28、shall be in accordance with MIL-PRF-19500. Manufacturers identification and date code shall be marked on the devices. Initial container package marking shall be in accordance with MIL-PRF-19500. 3.5.1 Polarity. Polarity shall be as marked on figure 1. 3.6 Electrical performance characteristics. Unle

29、ss otherwise specified herein, the electrical performance characteristics are as specified in 1.3 and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3. 3.8 Workmanship. Semiconductor devices shall be processed in s

30、uch a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Scr

31、eening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/469D 5 4.3

32、Screening (JANTX and JANTXV levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. 4.3.1 Discrete diode s

33、creening. One hundred percent of the internal discrete diodes shall be subjected to the following: Screen (see appendix E, Measurement table E-IV of MIL-PRF-19500) JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.5.6) 9 Not applicable 11 IR1and VF112 See 4.3.1.1 (2) 13 Subgroup 2 of table I h

34、erein. VF1= 0.1 V dc; IR1= 100 percent of initial value or 250 nA dc, whichever is greater. (1) Shall be performed anytime before screen 3. (2) Except thermal impedance, if already performed. 4.3.1.1 Power burn-in conditions. Power burn-in conditions are as follows, method 1038 of MIL-STD-750, test

35、condition B, TA= room ambient as defined in the general requirements and mounting conditions of MIL-STD-750, VRWM= rated VRWM(see 1.3), IO= 3 A dc, f = 60 Hz. See 4.5.1 herein for mounting conditions. 4.3.2 Assembly screening. One-hundred percent of the completed assemblies shall be subjected to the

36、 following: Screen (see appendix E, Measurement table E-IV of MIL-PRF-19500) 3a Method 1051 of MIL-STD-750, condition F. End-point electricals (1) Subgroup 2 of table I herein. Dielectric withstanding voltage See 4.5.2. (1) Except thermal impedance. 4.4 Conformance inspection. Conformance inspection

37、 shall be performed on the finished rectifier assemblies in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table E-V of MIL-PRF-19500 and table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitte

38、d without license from IHS-,-,-MIL-PRF-19500/469D 6 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VIb (JANTX, JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and de

39、lta requirements shall be in accordance with the applicable steps of table II herein. 4.4.2.1. Group B inspection, appendix E, table E-VIb of MIL-PRF-19500. Subgroup Method Conditions B2 1051 Condition F, 25 cycles. B2 1071 Not applicable. B3 1027 IO= 0; TA= +150C; VRWM= rated VRWM(see 1.3), f = 60

40、Hz, n = 10, c = 0. B3 Electrical measurements, see group A, subgroup 2 herein. B5 Operational thermal cycling, (see 4.5.7). B5 3105 Junction temperature test (see 4.5.4). B6 Not applicable. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified fo

41、r subgroup testing in appendix E, table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II herein. 4.4.3.1 Group C inspection, appendix E, table E-VII of MIL-PRF-19500. Subgroup Method Condit

42、ions C2 1056 Not applicable. C2 2036 Test condition A, 6 pounds, t = 30 seconds. C2 2036 Test condition D1, t = 10 seconds, 16 inch-ounces. C2 1071 Not applicable. C5 1001 Pressure = 8 mm Hg (M19500/469-01 through 03); 33 mm Hg (M19500/469-04, 05), IR= 2.0 A dc maximum, VR= rated VRWM(see 1.3), (app

43、lied between all terminals to the case); sampling plan = 15, c = 0. C6 1026 IO= 0; TA= 150C; VRWM= rated VRWM(see 1.3), f = 60 Hz. C6 Electrical measurements, see group A, subgroup 2 herein. C7 4066 VRWM= 0 V, bridge IO= 10 A dc (entire bridge biased); TC= 55C +10C, -0C; IFSM= 100 A (pk) (each devic

44、e for each bridge leg); tp= 8.3 ms; ten surges for each leg at maximum 1 minute intervals; n = 22, c = 0. Alternate condition: Each leg may be biased separately to IO= 5 A dc for each leg. All other conditions shall be the same as above. Provided by IHSNot for ResaleNo reproduction or networking per

45、mitted without license from IHS-,-,-MIL-PRF-19500/469D 7 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Mounting conditions. The diodes shall be suspended by the leads with at least 6.0 inches (152.4 mm) of no. 22 or smaller wire be

46、tween each lead and the power source. The connecting wires may be soldered to the leads or AS39029/57contacts may be used. Other clips may be used provided they have equal or less mass than the AS39029/57 contact. No forced air shall be permitted and the diodes shall be shielded from drafts. 4.5.1.1

47、 Alternate mounting conditions. At the option of the manufacturer, other chip or heat sink mounting configurations may be utilized provided that IOis adjusted such that the junction temperature of each diode is maintained at least 120C above the specified ambient temperature of 25C. 4.5.2 Dielectric

48、 withstanding voltage. This test shall be performed with the metal case of the assembly connected to ground and all four terminals connected to the high potential side of a dc power supply or a scope display test set. The voltage applied between the terminals and the case shall be 2,800 volts and sh

49、all be held at that level for 10 seconds. Any discontinuity or dynamic instability of the trace, or a breakdown current in excess of 10 A dc, shall be cause rejection. 4.5.3 Reverse-recovery time and trace. See method 4031 of MIL-STD-750 (see figure 2 herein). 4.5.4 Junction temperature test. This test shall be performed in accordance with method 3105 of MIL-STD-750 and figure 3 here