DLA MIL-PRF-19500 467 A-2008 SEMICONDUCTOR DEVICE DIODE LIGHT EMITTING TYPE 1N5765 JAN AND TX《1N5765 JAN和TX型发光二极管半导体装置》.pdf

《DLA MIL-PRF-19500 467 A-2008 SEMICONDUCTOR DEVICE DIODE LIGHT EMITTING TYPE 1N5765 JAN AND TX《1N5765 JAN和TX型发光二极管半导体装置》.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 467 A-2008 SEMICONDUCTOR DEVICE DIODE LIGHT EMITTING TYPE 1N5765 JAN AND TX《1N5765 JAN和TX型发光二极管半导体装置》.pdf（8页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/467A 23 April 2008 SUPERSEDING MIL-S-19500/467 25 January 1972 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, LIGHT EMITTING, TYPE 1N5765 JAN AND TX This specification is approved for use by all Departments and Agencies of the Department of Defense. * The requirements

2、for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for hermetically-sealed, red light emitting diodes. Two levels of product assurance are provided for each device type a

3、s specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1. * 1.3 Maximum ratings. Unless otherwise specified TA= +25C. BV IF(1) PT Ip(2) TOPand TSTGTJV dc 4 mA dc 50 mW 150 A (pk) 3.0 C -65 to +100 C -65 to +120 (1) Derate 0.67 mAdc/C for TAabove 25C. (2) 1 s pulse width, 300 pps. * 1.4 Ch

4、aracteristics, radiometric (physical), and photometric (visual). IV1IF= 20 mA dc = 0 degrees IV2IF= 20 mA dc = 30 degrees VF IF= 20 mA dc IRVR= 3 V C VR= 0 f = 1 MHz V(wave length) Color Limits mcd mcd V dc A dc pF nm Min Max 0.5 3.0 0.3 - 2.0 1 - 300 630 700 Red INCH-POUND The documentation and pro

5、cess conversion measures necessary to comply with this revision shall be completed by 23 August 2008. * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductordscc

6、.dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil . AMSC N/A FSC 5961 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF

7、-19500/467A 2 Dimensions Inches Millimeters Ltr Min Max Min Max BD .176 .190 4.47 4.83 BD1.200 .220 5.08 5.59 BH .180 .225 4.57 5.72 H .035 .045 0.89 1.14 HT .013 .024 0.33 0.61 J .032 .042 0.81 1.07 LD .016 .019 0.41 0.48 LL .970 1.030 24.64 26.16 PS .045 .055 1.14 1.40 NOTES: 1. Dimensions are in

8、inches. 2. Millimeters are given for general information only. 3. Glass/metal hermetic can. 4. Cathode lead; both leads isolated from case. 5. Red colored glass lens. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for types JAN1N5765 and JAN

9、TX1N5765. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/467A 3 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include docum

10、ents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5

11、 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these docu

12、ments are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at htt

13、p:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, th

14、e text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qual

15、ification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). * 3.3 Abbreviations, symbols, and definition

16、s. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and herein. IPPeak operating forward pulse current. Iptr Peak transient forward current. IV Luminous intensity (the subscript V is used to designate a photometric or visual quantity to differentiate from I

17、as used herein for current). VPeak radiometric wavelength of diode light emission. mcd Milli-candela; the candela is a unit of luminous intensity defined such that the luminance of a blackbody radiator at the temperature of solidification of platinum is 60 candelas per square centimeter. The angle a

18、t or off the axis of symmetry of a light source at which luminous intensity is measured. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, M

19、IL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/467A 4 3.4.2 Terminal lead length. Terminal lead lengths othe

20、r than that specified on figures 1 and 2 may be furnished when so stipulated in the acquisition document (see 6.2) where the devices covered herein are required directly for particular equipment-circuit installation or for automatic-assembly-technique programs. 3.5 Marking. Devices shall be marked a

21、s specified in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specifie

22、d in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specif

23、ied herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.3 Screening (JANTX level only). Screening shall be in accordan

24、ce with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Measurements Screen (see table E-IV of MIL-PRF-19500) JANTX level 2 As given, except cond

25、ition shall be 24 hours minimum at maximum rated storage temperature. 3a Tupper extreme=100C, +0C, -3C. 7 As given, except for the fine leak test, condition G, testing 2 hours after pressurization is acceptable and for the gross leak test, the device temperature shall be maintained at 100C 5C. 9 and

26、 10 Not applicable. 11 IV1,VF 12 IF= 50 mA dc; TA= +25C, t = 96 hours. 13 Subgroup 2 of table I herein; IV1= -20 percent of initial readings. VF=50 mV dc. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/467A 5 4.4 Conformance inspection

27、. Conformance inspection shall be in accordance with MIL-PRF-19500 and as follows. a. If the manufacturer chooses the following option(s) for testing, the sample units that are to be used in group C inspection shall be designated as such, prior to conducting the referenced group B tests. Moreover, t

28、he number of failed diodes to be counted for lot acceptance or rejected as a result of group C test shall be equal to all failed diodes of the test in group B inspection, which were predesignated for use in group C inspection, plus any additional failures occurring group C testing. For each life tes

29、t in group C inspection, the manufacturer has the option of using all, or a portion of, the sample already subjected to 340 hours of group B life testing for an additional 660 hours of testing to meet the 1,000 hour requirement. 4.4.1 Group A inspection. Group A inspection shall be conducted in acco

30、rdance with table E-V of MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIb of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in accordance with th

31、e inspections of table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table E-VIb of MIL-PRF-19500. Subgroup Method Condition 2 1051 Test condition A, except T(high)= +100C (25 cycles); time at temperature extremes 10 minutes minimum. 2 1071 Fine leak: Test condition G or H (for condition H, leak

32、 testing 2 hours after pressurization is acceptable). Gross leak: Test condition A, C, D, E, J, or K except that leak indicator fluid shall be maintained at +100C 5C. 3 1027 IF= 50 mA dc; TA= +25C; t = 340 hours + 72, - 24 hours (see 4.4.a). 4.4.3 Group C inspection. Group C inspection shall be cond

33、ucted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted

34、without license from IHS-,-,-MIL-PRF-19500/467A 6 4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500. Subgroup Method Condition 2 1056 Test condition A. 2 2036 Test condition E. 2 1071 Fine leak: Test condition G or H (for condition H, leak testing 2 hours after pressurization is acceptable).

35、Gross leak: Test condition A, C, D, E, J, or K except that leak indicator fluid shall be maintained at +100C 5C. 3 2016 Nonoperating; 1,500 Gs; t = 0.5 ms; 5 blows in each orientation: X1, Y1, and Y2. 3 2056 Nonoperating. 3 2006 Nonoperating; 20,000 Gs; X1, Y1, and Y2, one minute in each orientation

36、. 6 1026 IF= 50 mA dc; TA= +25C, 1,000 hours. 7 Peak forward pulse current (transient); tP= 1 s, pps = 300, total test time = 5 s, Iprt= 1.0 A (pk) 8 tP= 0.5 ms, PFM 150 mW, TA= +25C, IP= 60 mA, 500 hours. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tabl

37、es and as follows. 4.5.1 Axial luminous intensity. This measurement is made with a photometer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/467A 7 TABLE I. Group A inspection. MIL-STD-750 Limits Inspection 1/ Method Conditions Symbol

38、 Min Max Unit Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Luminous intensity = 0 degrees (see 4.5.1) IF= 20 mA dc IV10.5 3.0 mcd Luminous intensity = 30 degrees; IF= 20 mA dc IV20.3 mcd Reverse current 4016 DC method; VR= 3 V dc IR1.0 A dc Forward voltage 4011 DC method, IF= 20 mA dc

39、 VF2.0 V dc Subgroup 3 High temperature: TA= +100C Luminous intensity = 0 degrees, IF= 20 mA dc IV10.45 3.0 mcd Subgroup 4 Capacitance 4001 VR= 0; f = 1 MHz C 300 pF 1/ For sampling plan, see MIL-PRF-19500. 5. PACKAGING * 5.1 Packaging. For acquisition purposes, the packaging requirements shall be a

40、s specified in the contract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Contro

41、l Points packaging activities within the Military Service or Defense Agency, or within the Military Services system commands. Packaging data retrieval is available from the managing Military Departments or Defense Agencys automated packaging files, CD-ROM products, or by contacting the responsible p

42、ackaging activity. 6. NOTES * (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. The notes specified in MIL-PRF-19500 are applicable to this specification.) * 6.1 Intended use. Semiconductors conforming to this specification are intended

43、for original equipment design applications and logistic support of existing equipment. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/467A 8 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, nu

44、mber, and date of this specification. b. Packaging requirements (see 5.1). c. Lead finish (see 3.4.1). d. Product assurance level and type designator. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contrac

45、t, qualified for inclusion in Qualified Manufacturers List (QML-19500) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to t

46、he Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990,

47、 Columbus, OH 43218-3990 or e-mail vqe.chiefdla.mil . 6.4 Applications. These light emitting diodes are primarily intended for use as visible indicators (ON or OFF) of status. The modulation rate capability can be high enough to accommodate video signals. Diodes may be operated in either direct curr

48、ent or pulsed mode depending upon current availability. Pulsed operation is desirable as a means of linear control of average intensity or of improving the average efficiency (ratio of average intensity to average current). 6.5 Operating considerations. Under normal ambient light conditions (300 to

49、1,000 lux), a typical forward current of 6 mA is required to produce an adequate on-state luminous intensity. This current level is directly compatible with TTL devices, and only simple buffering is needed when operating from LSTTL, LTTL, CMOS. No consideration of inrush current or keep-alive voltage is necessary. 6.6 Reliabi