DLA MIL-PRF-19500 467 A-2008 SEMICONDUCTOR DEVICE DIODE LIGHT EMITTING TYPE 1N5765 JAN AND TX《1N5765 JAN和TX型发光二极管半导体装置》.pdf
《DLA MIL-PRF-19500 467 A-2008 SEMICONDUCTOR DEVICE DIODE LIGHT EMITTING TYPE 1N5765 JAN AND TX《1N5765 JAN和TX型发光二极管半导体装置》.pdf》由会员分享,可在线阅读,更多相关《DLA MIL-PRF-19500 467 A-2008 SEMICONDUCTOR DEVICE DIODE LIGHT EMITTING TYPE 1N5765 JAN AND TX《1N5765 JAN和TX型发光二极管半导体装置》.pdf(8页珍藏版)》请在麦多课文档分享上搜索。
1、 MIL-PRF-19500/467A 23 April 2008 SUPERSEDING MIL-S-19500/467 25 January 1972 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, LIGHT EMITTING, TYPE 1N5765 JAN AND TX This specification is approved for use by all Departments and Agencies of the Department of Defense. * The requirements
2、for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for hermetically-sealed, red light emitting diodes. Two levels of product assurance are provided for each device type a
3、s specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1. * 1.3 Maximum ratings. Unless otherwise specified TA= +25C. BV IF(1) PT Ip(2) TOPand TSTGTJV dc 4 mA dc 50 mW 150 A (pk) 3.0 C -65 to +100 C -65 to +120 (1) Derate 0.67 mAdc/C for TAabove 25C. (2) 1 s pulse width, 300 pps. * 1.4 Ch
4、aracteristics, radiometric (physical), and photometric (visual). IV1IF= 20 mA dc = 0 degrees IV2IF= 20 mA dc = 30 degrees VF IF= 20 mA dc IRVR= 3 V C VR= 0 f = 1 MHz V(wave length) Color Limits mcd mcd V dc A dc pF nm Min Max 0.5 3.0 0.3 - 2.0 1 - 300 630 700 Red INCH-POUND The documentation and pro
5、cess conversion measures necessary to comply with this revision shall be completed by 23 August 2008. * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductordscc
6、.dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil . AMSC N/A FSC 5961 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF
7、-19500/467A 2 Dimensions Inches Millimeters Ltr Min Max Min Max BD .176 .190 4.47 4.83 BD1.200 .220 5.08 5.59 BH .180 .225 4.57 5.72 H .035 .045 0.89 1.14 HT .013 .024 0.33 0.61 J .032 .042 0.81 1.07 LD .016 .019 0.41 0.48 LL .970 1.030 24.64 26.16 PS .045 .055 1.14 1.40 NOTES: 1. Dimensions are in
8、inches. 2. Millimeters are given for general information only. 3. Glass/metal hermetic can. 4. Cathode lead; both leads isolated from case. 5. Red colored glass lens. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for types JAN1N5765 and JAN
9、TX1N5765. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/467A 3 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include docum
10、ents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5
11、 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these docu
12、ments are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at htt
13、p:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, th
14、e text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qual
15、ification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). * 3.3 Abbreviations, symbols, and definition
16、s. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and herein. IPPeak operating forward pulse current. Iptr Peak transient forward current. IV Luminous intensity (the subscript V is used to designate a photometric or visual quantity to differentiate from I
17、as used herein for current). VPeak radiometric wavelength of diode light emission. mcd Milli-candela; the candela is a unit of luminous intensity defined such that the luminance of a blackbody radiator at the temperature of solidification of platinum is 60 candelas per square centimeter. The angle a
18、t or off the axis of symmetry of a light source at which luminous intensity is measured. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, M
19、IL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/467A 4 3.4.2 Terminal lead length. Terminal lead lengths othe
20、r than that specified on figures 1 and 2 may be furnished when so stipulated in the acquisition document (see 6.2) where the devices covered herein are required directly for particular equipment-circuit installation or for automatic-assembly-technique programs. 3.5 Marking. Devices shall be marked a
21、s specified in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specifie
22、d in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specif
23、ied herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.3 Screening (JANTX level only). Screening shall be in accordan
24、ce with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Measurements Screen (see table E-IV of MIL-PRF-19500) JANTX level 2 As given, except cond
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