DLA MIL-PRF-19500 370 H-2013 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON HIGH-POWER TYPE 2N3442 JAN JANTX AND JANTXV.pdf

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1、 MILPRF19500/370H 19 February 2013 SUPERSEDING MILPRF19500/370G 14 August 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPE 2N3442, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of D

2、efense. The requirements for acquiring the product described herein shall consist of this specification sheet and MILPRF19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistor. Three levels of product assurance are provided for each de

3、vice type as specified in MILPRF19500. 1.2 Physical dimensions. The device package style is TO204AA (formerly TO3) in accordance with figure 1. 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type PT(1) PT(2) RJCVCBOVCEOVEBOVCERIBICTJand TSTGTA= +25C TC= +25C (3) W W C/W V dc V dc V dc V

4、dc A dc A dc C 2N3442 6.0 117 1.5 160 140 7 150 7 10 65 to +200 (1) Derate linearly 34.2 mW/C above TA= +25C. (2) See figure 2 for temperature-power derating curves. (3) See figure 3 for transient thermal impedance graph. 1.4 Primary electrical characteristics. Unless otherwise specified, TC=+25C. h

5、FE1(1) VCE(sat)(1) hfeLimits VCE= 4 V dc IC= 3 A dc VCE= 4 V dc IC= 3 A dc IB= 300 mA dc IC= 3 A dc, f = 100 kHz V dc Min 20 1.0 Max 70 1.0 (1) Pulsed (see 4.5.1). AMSC N/A FSC 5961INCHPOUND The documentation and process conversion measures necessary to comply with this document shall be completed b

6、y 19 August 2012. Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address informa

7、tion using the ASSIST Online database at https:/assist.dla.mil. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/370H 2 FIGURE 1. Physical dimensions (TO204AA, formerly TO3). Provided by IHSNot for ResaleNo reproduction or networking permi

8、tted without license from IHS-,-,-MILPRF19500/370H 3 Symbol Dimensions Notes Inches Millimeters Min Max Min Max CD .875 22.23 3 CH .250 .450 6.35 11.43 HR .495 .525 12.57 13.34 HR1.131 .188 3.33 4.78 4 HT .060 .135 1.52 3.43 L1.050 1.27 5, 6 LD .038 .043 0.97 1.09 5, 6 LL .312 .500 7.92 12.70 5 MHD

9、.151 .161 3.84 4.09 4 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 7 PS1.205 .225 5.21 5.72 7 S1 .655 .675 16.64 17.15 7 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Terminal 1 is the emitter; terminal 2 is the base; and the collector shall be el

10、ectrically connected to the case. 3. Body contour is optional within zone defined by dimension CD. 4. Applies to both ends. 5. Applies to both terminals. 6. Dimension LD applies between L1and LL. Lead diameter shall not exceed twice dimension LD within dimension L1. Diameter is uncontrolled in dimen

11、sion L1. 7. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.4 mm) below the seating plane. When gauge is not used, measurement will be made at the seating plane. 8. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm

12、) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 9. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (TO204AA, formerly TO3) Cont

13、inued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/370H 4 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents ci

14、ted in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of thi

15、s specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

16、 those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MILSTD750 Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.dla.mil/

17、quicksearch or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191115094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the referenc

18、es cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MILPRF19500 and as modified

19、 herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols,

20、 and definitions. The abbreviations, symbols, and definitions used herein shall be as specified in MILPRF19500. 3.4 Interface and physical dimensions. The interface requirements and physical dimensions shall be as specified in MILPRF19500 and on figure 1 (TO204AA, formerly TO3) herein. 3.4.1 Lead fi

21、nish. Unless otherwise specified, the lead finish shall be solderable in accordance with MILSTD750, MILPRF19500, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Polarity. The identification of terminals of the device package sh

22、all be as shown on figure 1. Terminal 1 shall be connected to the emitter, terminal 2 shall be connected to the base, and the collector shall be electrically connected to the case. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristi

23、cs are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/370H 5 3.7 Marking. Marking shall be in acc

24、ordance with MILPRF19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements s

25、pecified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MILPRF19500 and as specified herein. 4.2.1 Group E qua

26、lification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the

27、 prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (quality levels JANTX and JANTXV only). Screening shall be in accordance with table EIV of MILPRF19500, and as specified herein. The following measurements shall be made in accord

28、ance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table EIV of MILPRF19500) Measurement JANTX and JANTXV levels only 3c (1) Thermal impedance (transient), see 4.3.1. 11 hFE1, ICEX12 See 4.3.2. 13 See table I, subgroup 2 herein. ICEX= 100

29、percent or 2 A dc whichever is greater; hFE1= 25 percent of initial value. (1) Thermal impedance shall be performed anytime after temperature cycling (screen 3a) and does not need to be repeated in screening requirements. 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed

30、 in accordance with test method 3131 of MILSTD750 using the guidelines in that test method for determining IH, IM, tH, tSW(and VHwhere appropriate). Measurement delay time (tMD) = 70 s maximum. The thermal impedance limit used in screen 3c and table I, subgroup 2 herein shall be set statistically by

31、 the supplier. See table II, subgroup 4 (group E) herein. 4.3.2 Power burn-in conditions. The power burn-in conditions shall be as follows: TJ= +187.5C 12.5C; VCB= 10 to 30 V dc; TA +35C. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditi

32、ons, TJ, and mounting conditions) may be used. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. Provided by IHSNot for ResaleNo reproduction or networking per

33、mitted without license from IHS-,-,-MILPRF19500/370H 6 4.4 Conformance inspection. Conformance inspection shall be in accordance with MILPRF19500, and as specified herein. If alternate screening is being performed in accordance with MILPRF19500, a sample of screened devices shall be submitted to and

34、 pass the requirements of table I, subgroup 1 and 2. Table EVIB, subgroup 1 of MILPRF19500 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table EV of MILPRF19500

35、and table I herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the test methods and conditions specified for subgroup testing in table EV

36、IB of MILPRF19500 and as follows. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein. Delta measurements shall be in accordance with the applicable step of 4.6 herein. Subgroup Method Conditions B3 1037 For solder die attach: 2,0

37、00 cycles; VCB= 10 - 30 V dc, TA +35C. or 1026 For eutectic die attach: VCB= 10 to 30 V dc, TA +35C, adjust PTto achieve TJ= +175C minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table EVII of MILP

38、RF19500 and as follows herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable step of 4.6 herein. Subgroup Method Conditions C2 2036 Test condition A, weight = 10 pounds 10 ounce (4.5Kg 0.28Kg

39、), t = 15 s. C5 3131 See 3.4.1, RJC= 1.5C/W. C6 1037 For solder die attach: 6,000 cycles; VCB= 10 to 30 V dc, TA +35C. or 1026 For eutectic die attach: VCB= 10 to 30 V dc, TA +35C, adjust PTto achieve TJ= +175C minimum. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance wi

40、th the tests and conditions specified for subgroup testing in appendix E, table EIX of MILPRF19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable step of 4

41、.6 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/370H 7 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse response measurements. The conditions for the pu

42、lse response measurement shall be as specified in section 4 of MILSTD750. 4.6 Delta requirements. The requirements for delta measurements for groups B, C, and E shall be as specified below. (1) (2) (3) Step Inspection MILSTD750 Symbol Limits Unit Method Conditions Min Max 1 Collector to base cutoff

43、current 3041 Bias condition A; ICEX100 percent of initial reading or 2 A dc, whichever is greater. VCE= 125 V dc (4) VEB= 1.5 V dc (1) The delta measurements for group B, product assurance levels JAN, JANTX and JANTXV as follows: a. In addition to the measurements specified for subgroup 3 of table E

44、VIB of MILPRF19500, the measurements of step 1 shall also be taken. b. In addition to the measurements specified for subgroup 6 of table EVIB of MILPRF19500, the measurements of step 1 also be taken. (2) The delta measurements for group C, all product assurance levels, shall be as follows: In additi

45、on to the measurements specified for subgroup 6 of table EVII of MILPRF19500, the measurements of step 1 shall also be taken. (3) The delta measurements for group E, all product assurance levels, shall be as follows: In addition to the measurements specified for subgroups 1 and 2 of table EIX of MIL

46、PRF19500, the measurements of step 1 shall also be taken. (4) Devices which exceed the table I (group A) limits for this test shall not be accepted. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/370H 8 TABLE I. Group A inspection. Inspe

47、ction 1/ MILSTD750 Symbol Limit Unit Method Conditions Max Min Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3131 See 4.3.1 ZJCC/W Breakdown voltage, collector to emitter 3011 Bias condition D; IC= 3 A dc, pulsed (see 4.5.1), see figure 4 V(BR)CEO140 V dc Breakdown v

48、oltage, collector to emitter 3011 Bias condition B; IC= 1.5 A dc, RBE= 100 , see figure 4 V(BR)CER150 V dc Breakdown voltage, collector to emitter 3011 Bias condition A; IC= 1.5 A dc, VEB= 1.5 V dc, see figure 4 V(BR)CEX160 V dc Collector to emitter cutoff current 3041 Bias condition A; VCE= 125 V dc, VEB= 1.5 V dc ICEX0.01 mA dc Collector to base cutoff current 3036 Bias condition D; VCB= 140 V dc ICBO10.1 mA dc Emitter to base cutoff current 3061 Condition D; VEB= 7 V dc IEBO1 mA dc Base emitter voltage (nonsaturated) 3066 Test conditi