DLA MIL-PRF-19500 304 E-2011 SEMICONDUCTOR DEVICE DIODE SILICON POWER RECTIFIER FAST RECOVERY TYPES 1N3885 1N3886 1N3888 1N3890 1N3891 1N3893 1N3890R 1N3891R 1N3893R AND A-VERSIONS.pdf

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1、 MIL-PRF-19500/304E 20 September 2011 SUPERSEDING MIL-PRF-19500/304D 15 August 1999 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, 1N3893R, AND A-VERSIONS, JAN, JANTX, JANT

2、XV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the

3、 performance requirements for 12 and 20 ampere, silicon fast recovery, power, rectifier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type. 1.2 Physical dimensi

4、ons. See figures 1, 2 (DO-4), and 3 (die). 1.3 Maximum ratings. TC= 25C unless otherwise specified. Type VRVRWMIO(1) TC= 100C IFSMTC= 100C t = 1/120 s trrTCV V (pk) A dc A (pk) ns C 1N3885 1N3885A 1N3890, R 1N3890A, AR 1N3886 1N3886A 1N3891, R 1N3891A, AR 1N3888 1N3888A 1N3893, R 1N3893A, AR 100 100

5、 100 100 200 200 200 200 400 400 400 400 100 100 100 100 200 200 200 200 400 400 400 400 12 20 12 20 12 20 12 20 12 20 12 20 150 225 175 250 150 225 175 250 150 225 175 250 200 150 200 150 200 150 200 150 200 150 200 150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to

6、+150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 (1) Derate linearly 2 percent of IO/C for TC 100C, see figure 4. Storage temperature: TC= -65C to +150C for 1N3885, 1N3886, 1N3888 and A versions. Storage temperature: TC= -65C to +175C for 1N3890, 1N3891, 1N3893 and A, R, AR versions.

7、 Barometric pressure reduced: 15 mmHg. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductordla.mil. Since contact information can change, you ma

8、y want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil. The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 December 2011. Provided by IHSNot for ResaleNo reproduction or n

9、etworking permitted without license from IHS-,-,-MIL-PRF-19500/304E 2 1.4 Primary electrical characteristics. TC= 25C unless otherwise specified. Type IR1IR2TA= +150C VR (V dc) A dc VR (V dc) mA dc 1N3885, A, 1N3890, A, 1N3890R, AR 1N3886, A, 1N3891, A, 1N3891R, AR 1N3888, A, 1N3893, A, 1N3893R, AR

10、100 200 400 10.0 10.0 10.0 100 200 400 2 2 2 Type RJCC/W Isolated non - A Isolated A Non isolated non - A Non isolated A 3.0 2.5 2.0 1.5 (1) (1) See figure 5 for thermal impedance curves. 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5

11、 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all speci

12、fied requirements documents cited in section 3, 4, or 5 of this specification, whether or not they are listed. * 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified her

13、ein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices.

14、 * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil. or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in

15、the contract, in the event of a conflict between the text of this specification and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot

16、 for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/304E 3 Ltr Dimensions Notes Inches Millimeters Min Max Min Max C .020 .038 0.51 0.97 CD.487 12.37 3 CH .550 13.97 CH1 .050 1.27 HF .487 .500 12.37 12.70 HT .085 .160 2.16 4.06 HT1.040 1.02 J .750 .875 19.05

17、 22.22 K .110 .140 2.79 3.56 3 OAH .950 24.13 OM .163 .189 4.14 4.80 SL .422 .453 10.72 11.50 SP 5, 6, 7, 8 T .060 1.52 T1 .110 .140 2.79 3.56 T2 .055 .075 1.40 1.90 TD .250 6.35 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Angular orientation of this

18、 terminal is undefined. Square or radius on end of terminals is optional. 4. Diameter variations within these limits are permitted. 5. The ANSI thread reference is 0.190-32 UNF-2A. 6. Max pitch diameter of plated threads shall be basic pitch diameter .169 inch (4.29 mm) reference FED-STD-H28 (Screw

19、Thread Standards for Federal Services.) 7. Units shall not be damaged by torque of 15 inch-pounds applied to 0.190-32 UNF-2B nut assembled on thread. 8. Complete threads to extend to within .078 inch (1.98 mm) of the seating plane. 9. Stud and seating plane shall be electrically insulated from the c

20、ase, cathode, and anode. FIGURE 1. Physical dimensions of isolated types: 1N3885, 1N3885A, 1N3886, 1N3886A, 1N3888, and 1N3888A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/304E 4 Ltr Dimensions Notes Inches Millimeters Min Max Min

21、Max CD.424 10.77 CH .405 10.29 CH1 .020 .065 0.51 1.65 9 G.060 1.52 HF .424 .437 10.77 11.10 HT .075 .175 1.90 4.44 OAH .800 20.32 OM .163 .189 4.14 4.80 SL .422 .453 10.72 11.50 SP 5, 6, 7, 8 T .060 1.52 TD .250 6.35 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general informati

22、on only. 3. Angular orientation of this terminal is undefined. Square or radius on end of terminals is optional. 4. Diameter variations within these limits are permitted. 5. The ANSI thread reference is 0.190-32 UNF-2A. 6. Max pitch diameter of plated threads shall be basic pitch diameter 0.169 inch

23、 (4.29 mm) reference FED-STD-H28 (Screw Thread Standards for Federal Services.) 7. Units must not be damaged by torque of 15 inch-pounds applied to 0.190-32 UNF-2B nut assembled on thread. 8. Complete threads to extend to within 0.078 inch (1.98 mm) of the seating plane. 9. Terminal-end shape is unr

24、estricted. 10. Reversed (anode to stud) units shall be marked with an “R” following the last digit in the type number. 11. Forward polarity (cathode to stud) marking is shown. FIGURE 2. Physical dimensions of non-isolated types: 1N3890, 1N3890A, 1N3891, 1N3891A, 1N3893, 1N3893A, 1N3890R, 1N3890AR, 1

25、N3891R, 1N3891AR, 1N3893R, and 1N3893AR (DO-4). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/304E 5 A version Ltr Dimensions Inches Millimeters Min Max Min Max A .114 .117 2.89 2.97 B .130 .133 3.30 3.37 C .009 .010 0.228 0.254 NOTES

26、: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The physical characteristics of the die are: Metallization front (anode), back, (cathode) consists of: Ag thickness = 3,000 minimum, Ni thickness = 1,500 minimum, Cr thickness = 800 minimum. 4. Requirements in a

27、ccordance with MIL-PRF-19500 are performed in a DO-4 package. FIGURE 3. Physical dimensions JANHC and JANKC. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/304E 6 3. REQUIREMENTS * 3.1 General. The individual item requirements shall be

28、 as specified in MIL-PRF-190500 and as modified herein. * 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract awa

29、rd (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in MIL-PRF-19500

30、 and on figures 1, 2 (DO-4), and 3 (die). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500. Where a choice of lead finish is desired, it shall be specified in the contract or purchase order (see 6.2). 3.4.2 Diode types 1N3885, 1N3886, and 1N3888 (see figure 1). Dio

31、de types1N3885, 1N3886, and 1N3888 have the stud and seating plane electrically insulated from the anode, cathode, and case. 3.4.3 Diode types 1N3890, 1N3891, and 1N3893 (see figure 2). Diode types1N3890, 1N3891, and 1N3893 (forward polarity) have the cathode electrically connected to the stud and c

32、ase. 3.4.4 Diode types 1N3890R, 1N3891R, and 1N3893R (see figure 2). Diode types1N3890R, 1N3891R, and 1N3893R (reverse polarity) have the anode electrically connected to the stud and case. 3.4.5 Dissimilar construction. Types utilizing construction as shown on figure 1 shall not be considered struct

33、urally identical to types utilizing construction as shown in figure 2. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5.1 Polarity. The polarity shall be indicated by a graphic symbol with the arrow pointing toward the negative end for forward bias. The reversed units shall also b

34、e marked with an R following the last digit in the type number. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requiremen

35、ts shall be the subgroups specified in table I herein. * 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4.VERIFICATION 4.1 Classification of Inspections.

36、 The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.1.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-PRF-19500 and herein, except lot accumul

37、ation period shall be 3 months in lieu of 6 weeks. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified herein. Tests in either polarity shall be sufficient to obtain qualification approval of both polarities. Provided by IHSNot for Resal

38、eNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/304E 7 * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not re

39、quest the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.2 Qualification for JANHC and JANKC. Qualification for JANHC and JANKC devices

40、shall be in accordance with MIL-PRF-19500. * 4.3 Screening. Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable

41、. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 1/ 3b Surge (see 4.3.1) Surge (see 4.3.1) 3c Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2) 9 VF2and IR12/ VF2and IR12/ 10 Method 1038, of MIL-STD-750, test condition A, t = 96 hours Method 1038, o

42、f MIL-STD-750, test condition A, t = 48 hours 11 Subgroup 2 of table I herein, VF2and IR1; VF2= 0.1 V (pk) from initial value; IR1= 5 A dc or 100 percent from the initial value, whichever is greater. Subgroup 2 of table I herein, VF2and IR1; VF2= 0.1 V(pk) from initial value; IR1= 5 A dc or 100 perc

43、ent from the initial value, whichever is greater. 12 Burn-in see 4.3.3 and 4.5.2, method 1038 of MIL-STD-750, test condition B Not applicable 13 Subgroup 2 and 3 of table I herein, VF2and IR1; VF2= 0.1 V (pk); IR1= 5 A dc or 100 percent from the initial value, whichever is greater Not applicable 1/

44、Surge shall precede thermal response. These tests shall be performed anytime after screen 3 and before screen 9. 2/ IR1measurement shall not be indicative of an open condition. 4.3.1 Surge current. Surge current, see method 4066 of MIL-STD-750. IO= 0; VRM(w) = 0; six surges; TA= 25C, tp= 8.3 ms, one

45、 surge per minute maximum. Surge current value (IFSM) A - version Non A - version 1N3885 1N3886 1N3888 1N3890, R 1N3891, R 1N3893, R 290 290 290 310 310 310 190 190 190 210 210 210 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/304E 8

46、* 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and K factor where appropriate). The limit will be statistically derived. See appendix E, table E-IX, subgrou

47、p 4, of MIL-PRF-19500 and table II, subgroup 4 herein. tMD= 50 to 300 s. 4.3.3 Burn-in and life test. Power burn-in conditions are as follows: Method 1038 of MIL-STD-750, , test condition B. TC= 100C, rated IO, see 4.5.2. a. 1N3885, 1N3890, 1N3890R VR= 100 V (pk) b. 1N3886, 1N3891, 1N3891R VR= 200 V

48、 (pk) c. 1N3888, 1N3893, 1N3893R VR= 400 V (pk) 4.3.4 Screening JANHC and JANKC. Screening for JANHC and JANKC shall be in accordance with MIL-PRF-19500 and herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A ins

49、pection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VIa (JANS) and table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and