DLA DSCC-VID-V62 13604-2013 MICROCIRCUIT LINEAR 2 2 V TO 4 V 14 A OUTPUT SYNCHRONOUS BUCK PWM SWITCHER WITH INTEGRATED FETS MONOLITHIC SILICON.pdf
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1、 REVISIONS LTR DESCRIPTION DATE APPROVED Prepared in accordance with ASME Y14.24 Vendor item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGE 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY Phu H. Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil/ Origina
2、l date of drawing YY MM DD CHECKED BY Phu H. Nguyen TITLE MICROCIRCUIT, LINEAR, 2.2 V TO 4 V, 14 A OUTPUT SYNCHRONOUS BUCK PWM SWITCHER WITH INTEGRATED FETS, MONOLITHIC SILICON 13-02-04 APPROVED BY Thomas M. Hess SIZE A CODE IDENT. NO. 16236 DWG NO. V62/13604 REV PAGE 1 OF 12 AMSC N/A 5962-V044-13 P
3、rovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/13604 REV PAGE 2 1. SCOPE 1.1 Scope. This drawing documents the general requirements of a high performance 2.2 V to 4 V, 14 A
4、output synchronous buck PWM switcher with integrated FETs microcircuit, with an operating temperature range of -55C to +125C. 1.2 Vendor Item Drawing Administrative Control Number. The manufacturers PIN is the item of identification. The vendor item drawing establishes an administrative control numb
5、er for identifying the item on the engineering documentation: V62/13604 - 01 X E Drawing Device type Case outline Lead finish number (See 1.2.1) (See 1.2.2) (See 1.2.3) 1.2.1 Device type(s). Device type Generic Circuit function 01 TPS54010-EP 2.2 V to 4 V, 14 A output synchronous buck PWM switcher w
6、ith integrated FETs 1.2.2 Case outline(s). The case outlines are as specified herein. Outline letter Number of pins JEDEC PUB 95 Package style X 28 JEDEC MO-153 Plastic Small Outline Package 1.2.3 Lead finishes. The lead finishes are as specified below or other lead finishes as provided by the devic
7、e manufacturer: Finish designator Material A Hot solder dip B Tin-lead plate C Gold plate D Palladium E Gold flash palladium Z Other Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG
8、NO. V62/13604 REV PAGE 3 1.3 Absolute maximum ratings. 1/ Input voltage range, (VI): SS/ENA, SYNC -0.3 V to 7 V RT -0.3 V to 6 V VSENSE . -0.3 V to 4 V PVIN, VIN . -0.3 V to 4.5 V BOOT . -0.3 V to 10 V Output voltage range, (VO): VBIAS, COMP, PWRGD -0.3 V to 7 V PH -0.6 to 6 V Source current, (VO):
9、PH internally limited, COMP, VBIAS 6 mA Sink current, (IS): PH 25 A COMP 6 mA SS/ENA, PWRGD 10 mA Voltage differential , AGND to PGND 0. 3 V Junction temperature range, (TJ): -55C to +150C Storage temperature range, (Tstg) . -65C to 150C Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds 3
10、00C Electrostatic Discharge (ESD) ratings: Human body model (HBM) . 1.5 kV CDM . 750 V 1.4 Recommended operating conditions. 2/ Input voltage, (VIN) 3 V to 4 V Power input voltage, (PVIN) . 2.2 V to 4 V Operating junction temperature . -55C to +125C 1/ Stresses beyond those listed under “absolute ma
11、ximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute maximum rated conditions for extended p
12、eriods may affect device reliability. 2/ Use of this product beyond the manufacturers design rules or stated parameters is done at the users risk. The manufacturer and/or distributor maintain no responsibility or liability for product used beyond the stated limits. Provided by IHSNot for ResaleNo re
13、production or networking permitted without license from IHS-,-,-DLA LAND AND MARITIME COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/13604 REV PAGE 4 1.5 Thermal characteristics. Thermal metric 3/ Case outline X Units Junction to ambient thermal resistance, JA4/ 30.5 C/W Junction to case (to
14、p) thermal resistance, JCtop5/ 13.5 Junction to board thermal resistance, JB6/ 11.6 Junction to top characterization parameter, JT7/ 0.4 Junction to board characterization parameter, JB8/ 11.4 Junction to case (bottom) thermal resistance, JCbot9/ 0.9 2. APPLICABLE DOCUMENTS JEDEC SOLID STATE TECHNOL
15、OGY ASSOCIATION (JEDEC) JEP95 Registered and Standard Outlines for Semiconductor Devices JESD51 Methodology for the Thermal Measurement of Component Packages (Single Semiconductor Device). JESD51-2a Integrated Circuits Thermal Test Method Environment Conditions Natural Convection (Still Air) JESD51-
16、7 High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages JESD51-8 Integrated Circuits Thermal Test Method Environment Conditions Junction-to-board (Copies of these documents are available online at http:/www.jedec.org or from JEDEC Solid State Technology Association, 3103 N
17、orth 10th Street, Suite 240S, Arlington, VA 22201-2107). AMERICAN NATIONAL STANDARDS INSTITUTE (ANSI) STANDARD ANSI SEMI STANDARD G30-88 null Test Method for Junction-to-Case Thermal Resistance Measurements for Ceramic Packages (Applications for copies should be addressed to the American National St
18、andards Institute, Semiconductor Equipment and Materials International, 1819 L Street, NW, 6 th floor, Washington, DC 20036 or online at http:/www.ansi.org) _ 3/ For more information about traditional and new thermal metrics, see manufacturer data. 4/ The junction to ambient thermal resistance under
19、 natural convection is obtained in a simulation on a JEDEC-standard, high-K-board, as specified in JESD51-7, in an environment described in JESD51-2a. 5/ The junction to case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specified JEDEC- standard test ex
20、ists, but a close description can be found in the ANSI SEMI standard G30-88. 6/ The junction to board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. 7/ The junction to top characterization parame
21、ter, JT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining JA, using a procedure described in JESD51-2a (sections 6 and 7). 8/ The junction to board characterization parameter, JB, estimates the junction temperature of a device in
22、 a real system and is extracted from the simulation data for obtaining JA, using a procedure described in JESD51-2a (sections 6 and 7). 9/ The junction to case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specified JEDEC- standard test exists
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