BS IEC 60747-9-2007 Semiconductor devices - Discrete devices - Insulated-gate bipolar transistors (IGBTs)《半导体装置 分立器件 绝缘栅双极晶体管(IGBTs)》.pdf

《BS IEC 60747-9-2007 Semiconductor devices - Discrete devices - Insulated-gate bipolar transistors (IGBTs)《半导体装置 分立器件 绝缘栅双极晶体管(IGBTs)》.pdf》由会员分享，可在线阅读，更多相关《BS IEC 60747-9-2007 Semiconductor devices - Discrete devices - Insulated-gate bipolar transistors (IGBTs)《半导体装置 分立器件 绝缘栅双极晶体管(IGBTs)》.pdf（60页珍藏版）》请在麦多课文档分享上搜索。

1、BRITISH STANDARDBS IEC 60747-9:2007Semiconductor devices Discrete devices Part 9: Insulated-gate bipolar transistors (IGBTs)ICS 31.080.30g49g50g3g38g50g51g60g44g49g42g3g58g44g55g43g50g56g55g3g37g54g44g3g51g40g53g48g44g54g54g44g50g49g3g40g59g38g40g51g55g3g36g54g3g51g40g53g48g44g55g55g40g39g3g37g60g3g

2、38g50g51g60g53g44g42g43g55g3g47g36g58BS IEC 60747-9:2007This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 November 2007 BSI 2007ISBN 978 0 580 54381 4National forewordThis British Standard is the UK implementation of IEC 60747-9:2007. It sup

3、ersedes BS IEC 60747-9:1998 which is withdrawn.The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained on request to its secretary.This publication does not purport to include all the ne

4、cessary provisions of a contract. Users are responsible for its correct application.Compliance with a British Standard cannot confer immunity from legal obligations.Amendments issued since publicationAmd. No. Date CommentsIEC 60747-9Edition 2.0 2007-09INTERNATIONAL STANDARD Semiconductor devices Dis

5、crete devices Part 9: Insulated-gate bipolar transistors (IGBTs) BS IEC 60747-9:2007CONTENTS 1 Scope.5 2 Normative references .5 3 Terms and definitions .5 3.1 Graphical symbol of IGBT5 3.2 General terms .6 3.3 Terms related to ratings and characteristics; voltages and currents.6 3.4 Terms related t

6、o ratings and characteristics; other characteristics.8 4 Letter symbols10 4.1 General .10 4.2 Additional general subscripts.10 4.3 List of letter symbols .11 5 Essential ratings and characteristics.12 5.1 Ratings (limiting values) 12 5.2 Characteristics 13 6 Measuring methods 15 6.1 General .15 6.2

7、Verification of ratings (limiting values) .15 6.3 Methods of measurement 24 7 Acceptance and reliability.43 7.1 General requirements43 7.2 Specific requirements43 7.3 Type tests and routine tests 46 Annex A (normative) Measuring method for collector-emitter breakdown voltage .48 Annex B (normative)

8、Measuring method for inductive load turn-off current under specified conditions 50 Annex C (normative) Forward biased safe operating area (FBSOA) .52 Annex D (normative) Case non-rupture56 Bibliography57 Figure 1 Circuit for measuring the collector-emitter voltages VCES, VCER, VCEX.16 Figure 2 Circu

9、it for testing the gate-emitter voltage VGES.17 Figure 3 Circuit for measuring collector current18 Figure 4 Circuit for measuring peak collector current .19 Figure 5 Test circuit of reverse safe operating area (RBSOA) 20 Figure 6 Waveforms of gate-emitter voltage VGEand collector current ICduring tu

10、rn-off20 Figure 7 Circuit for testing safe operating pulse width at load short circuit (SCSOA1) 21 Figure 8 Waveforms of gate-emitter voltage VGE, collector current ICand voltage VCEduring load short-circuit condition SCSOA1 22 Figure 9 Short-circuit safe operating area 2 (SCSOA2) 23 BS IEC 60747-9:

11、2007 2 Figure 10 Waveforms during SCSOA2 .23 Figure 11 Circuit for measuring the collector-emitter sustaining voltage VCE*sus24 Figure 12 Operating locus of the collector current 25 Figure 13 Circuit for measuring the collector-emitter saturation voltage VCEsat.26 Figure 14 Basic circuit for measuri

12、ng the gate-emitter threshold voltage 27 Figure 15 Circuit for measuring the collector cut-off current .28 Figure 16 Circuit for measuring the gate leakage current .29 Figure 17 Circuit for measuring the input capacitance30 Figure 18 Circuit for measuring the output capacitance31 Figure 19 Circuit f

13、or measuring the reverse transfer capacitance .32 Figure 20 Circuit for measuring the gate charge.33 Figure 21 Basic gate charge waveform 33 Figure 22 Circuit for measuring the short-circuit internal gate resistance34 Figure 23 Circuit for measuring turn-on times and energy 35 Figure 24 Waveforms du

14、ring turn-on times.36 Figure 25 Circuit for measuring turn-off times and energy 37 Figure 26 Waveforms during turn-off times.37 Figure 27 Circuit for measuring the variation with temperature of the collector- emitter voltage VCE at a low measuring current IC1 and for heating up the IGBT by a high cu

15、rrent IC239 Figure 28 Typical variation of the collector-emitter voltage VCE at a low measuring current IC1 with the case temperature Tc (when heated from outside, i.e. Tc = Tvj)40 Figure 29 Circuit for measuring thermal resistance and transient thermal impedance: method 2 41 Figure 30 Typical varia

16、tion of the gate-emitter threshold voltage VGE(th)at a low measuring current IC2with the case temperature Tc (when heated from the outside, i.e. Tc= Tvj) .42 Figure 31 IC, VGE and Tcwith time .43 Figure 32 Circuit for high-temperature blockings 44 Figure 33 Circuit for high-temperature gate bias 45

17、Figure 34 Circuit for intermittent operating life .45 Figure 35 Expected number of cycles versus temperature rise Tvj.46 Figure A.1 Circuit for testing the collector-emitter breakdown voltage 48 Figure B.1 Measuring circuit for inductive load turn-off current.50 Figure B.2 Waveforms of collector cur

18、rent ICand collector voltage VCEduring turn-off .50 Figure C.1 Test circuit of forward biased safe operating area (method 1).52 Figure C.2 Typical VCEversus collector-emitter voltage VCEcharacteristics.53 Figure C.3 Typical forward biased safe operating area.53 Figure C.4 Circuit testing forward bia

19、sed safe operating area (method 2).54 Figure C.5 Latching mode operation waveforms.55 Figure C.6 Latching mode I-V characteristic.55 BS IEC 60747-9:2007 3 Table 1 Acceptance-defining characteristics 15 Table 2 Acceptance-defining characteristics for endurance and reliability tests44 Table 3 Minimum

20、type and routine tests for IGBTs when applicable .47 BS IEC 60747-9:2007 4 SEMICONDUCTOR DEVICES DISCRETE DEVICES Part 9: Insulated-gate bipolar transistors (IGBTs) 1 Scope This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics,

21、 verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the late

22、st edition of the referenced document (including any amendments) applies. IEC 60747-1:2006, Semiconductor devices Part 1: General IEC 60747-2, Semiconductor devices Discrete devices and integrated circuits Part 2: Rectifier diodes IEC 60747-6, Semiconductor devices Part 6: Thyristors IEC 61340 (all

23、parts), Electrostatics 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 Graphical symbol of IGBT The graphical symbol as shown below is used in this edition of IEC 60747-9. G C E Graphical symbol NOTE Only the graphical symbol for N-channel IG

24、BT is used in this standard. It equally applies for the measurement of P-channel devices. In the case of P-channel devices polarity must be adapted. BS IEC 60747-9:2007 5 3.2 General terms 3.2.1 insulated-gate bipolar transistor IGBT transistor having a conduction channel and a PN junction. The curr

25、ent flowing through the channel and the junction is controlled by an electric field resulting from a voltage applied between the gate and emitter terminals See IEV 521-04-05. NOTE With collector-emitter voltage applied, the PN junction is forward biased. 3.2.2 N-channel IGBT IGBT that has one or mor

26、e N-type conduction channels See IEV 521-05-06. 3.2.3 P-channel IGBT IGBT that has one or more P-type conduction channels See IEV 521-04-05. 3.2.4 collector current (of an IGBT) Icdirect current that is switched (controlled) by the IGBT 3.2.5 collector terminal, collector (of an IGBT) C for an N-cha

27、nnel (a P-channel) IGBT, the terminal to (from) which the collector current flows from (to) the external circuit See IEV 521-07-05 and IEV 521-05-02. 3.2.6 emitter terminal, emitter (of an IGBT) E for an N-channel (a P-channel) IGBT, the terminal from (to) which the collector current flows to (from)

28、 the external circuit See IEV 521-07-04. 3.2.7 gate terminal, gate (of an IGBT) G terminal to which a voltage is applied against the emitter terminal in order to control the collector current See IEV 521-07-09. 3.3 Terms related to ratings and characteristics; voltages and currents 3.3.1 collector-e

29、mitter (d.c.) voltage voltage between collector and emitter 3.3.2 collector-emitter voltage with gate-emitter short-circuited VCEScollector-emitter voltage at which the collector current has a specified low (absolute) value with gate-emitter short-circuited BS IEC 60747-9:2007 6 3.3.3 collector-emit

30、ter sustaining voltage VCE*suscollector-emitter breakdown voltage at relatively high values of collector current where the breakdown voltage is relatively insensitive to changes in collector current, for a specified termination between gate and emitter terminals NOTE 1 The specified termination betw

31、een gate and emitter terminals is indicated in the letter symbol by the third subscript *; see 4.1.2 of IEC 60747-7. NOTE 2 When necessary, a suitable qualifier is added to the basic term to indicate a specific termination between gate and emitter terminals. Example: Collector-emitter sustaining vol

32、tage with gate and emitter terminals short-circuited VCESsus. NOTE 3 The basic term may be shortened if the meaning is clear from the letter symbol used. Example: Collector-emitter sustaining voltage VCERsus. NOTE 4 This term is important for high-voltage devices, for example more than 4 kV. 3.3.4 c

33、ollector-emitter breakdown voltage V(BR)CESvoltage between collector and emitter above which the collector current rises steeply, with gate to emitter short-circuited See IEV 521-05-06. 3.3.5 collector-emitter saturation voltage VCEsatcollector-emitter voltage under conditions of gate-emitter voltag

34、e at which the collector current is essentially independent of the gate-emitter voltage 3.3.6 gate-emitter (d.c.) voltage voltage between gate and emitter 3.3.7 gate-collector (d.c.) voltage voltage between gate and collector 3.3.8 gate-emitter threshold voltage VGE(th)gate-emitter voltage at which

35、the collector current has a specified low (absolute) value 3.3.9 electrostatic discharge voltage voltage that can be applied to the gate terminal without destruction of the isolation layer See IEV 521-05-27 3.3.10 collector cut-off current collector current at a specific collector-emitter voltage be

36、low the breakdown region and gate off-state 3.3.11 collector current current through collector BS IEC 60747-9:2007 7 3.3.12 tail current ICZcollector current during the tail time 3.3.13 gate leakage current IGESleakage current into the gate terminal at a specified gate-emitter voltage with the colle

37、ctor terminal short-circuited to the emitter terminal 3.3.14 safe operating area SOA collector current versus collector emitter voltage where the IGBT is able to turn-on and turn-off without failure 3.3.14.1 forward bias safe operating area FBSOA collector current versus collector emitter voltage wh

38、ere the IGBT is able to turn-on and is able to be on-state without failure 3.3.14.2 reverse bias safe operating area RBSOA collector current versus collector emitter voltage where the IGBT is able to turn-off without failure 3.3.14.3 short circuit safe operating area SCSOA short circuit duration and

39、 collector emitter voltage where the IGBT is able to turn-on and turn-off without failure 3.4 Terms related to ratings and characteristics; other characteristics 3.4.1 input capacitance Ciescapacitance between the gate and emitter terminals with the collector terminal short-circuited to the emitter

40、terminal for a.c. 3.4.2 output capacitance Coescapacitance between the collector and emitter terminals with the gate terminal short-circuited to the emitter terminal for a.c. 3.4.3 reverse transfer capacitance Crescapacitance between the collector and gate terminals 3.4.4 gate charge QGcharge requir

41、ed to raise the gate-emitter voltage from a specified low to a specified high level BS IEC 60747-9:2007 8 3.4.5 internal gate resistance rginternal series resistance 3.4.6 turn-on energy (per pulse) Eonenergy dissipated inside the IGBT during the turn-on of a single collector current pulse NOTE The

42、corresponding turn-on power dissipation under periodic pulse conditions is obtained by multiplying Eon by the pulse frequency. 3.4.7 turn-off energy (per pulse) Eoffenergy dissipated inside the IGBT during the turn-off time plus the tail time of a single collector current pulse NOTE The correspondin

43、g turn-off power dissipation under periodic pulse conditions is obtained by multiplying Eoff by the pulse frequency. 3.4.8 turn-on delay time td(on), tdtime interval between the beginning of a voltage pulse across the input terminals which switches the IGBT from the off-state to the on-state and the

44、 beginning of the rise of the collector current NOTE Usually, the time is measured between points corresponding to 10 % of the input and output pulse amplitudes. 3.4.9 rise time trtime interval between the instants at which the rise of the collector current reaches specified lower and upper limits,

45、respectively, when the IGBT is being switched from the off-state to the on-state NOTE Usually the lower and upper limits are 10 % and 90 % of the pulse amplitude. 3.4.10 turn-on time tonsum of the turn-on delay time and the rise time 3.4.11 turn-off delay time td(off), tstime interval between the en

46、d of the voltage pulse across the input terminals which has held the IGBT in its on-state and the beginning of the fall of the collector current when the IGBT is switched from the on-state to the off-state NOTE Usually, the time is measured between points corresponding to 90 % of the input and outpu

47、t pulse amplitudes. 3.4.12 fall time tftime interval between the instants at which the fall of the collector current reaches specified upper and lower limits, respectively, when the IGBT is switched from the on-state to the off-state NOTE Usually, the upper and lower limits are 90 % and 10 % of the

48、pulse amplitude. BS IEC 60747-9:2007 9 3.4.13 turn-off time toffsum of the turn-off delay time and the fall time 3.4.14 tail time tztime interval from the end of the turn-off time to the instant at which the collector current has fallen to 2 % or lower specified value 4 Letter symbols 4.1 General Ge

49、neral letter symbols for IGBTs are defined in Clause 4 of IEC 60747-1. 4.2 Additional general subscripts C,c collector E,e emitter G,g gate sat saturation th threshold Z,z tail S termination with a short circuit R termination with a resistor X termination with specified gate emitter voltage sus sustaining BS IEC 60747-9:2007 10 4.3 List of letter symbols Name and designation Letter symbol 4.3.1 Voltages Collector-emitter voltage VCECollector-emitter voltage,