KS C IEC 62276-2007 Single crystal wafers for surface acoustic wave(SAW) device applications－Specifications and measuring methods《表面声波装置用单晶薄片 规范和测量方法》.pdf

《KS C IEC 62276-2007 Single crystal wafers for surface acoustic wave(SAW) device applications－Specifications and measuring methods《表面声波装置用单晶薄片 规范和测量方法》.pdf》由会员分享，可在线阅读，更多相关《KS C IEC 62276-2007 Single crystal wafers for surface acoustic wave(SAW) device applications－Specifications and measuring methods《表面声波装置用单晶薄片 规范和测量方法》.pdf（34页珍藏版）》请在麦多课文档分享上搜索。

1、 KSKSKSKSKSKSKSK KSKSKS KSKSK KSKS KSK KS KS C IEC 62276 KS C IEC 62276： 2007(2012 ) 2007 11 30 http:/www.kats.go.krKS C IEC 62276： 2007 : ( ) ( ) ( ) : (http:/www.standard.go.kr) ： ：2007 11 30 ：2012 12 31 2012-0857 ： ： ( 02-509-7294) (http:/www.kats.go.kr). 10 5 , . KS C IEC 62276： 2007 i .1 1 1 2

2、1 3 .1 4 7 4.1 7 4.2 8 5 (sampling) .11 5.1 .11 5.2 (sampling frequency) 11 5.3 (inspection of whole population).11 6 11 6.1 .11 6.2 .12 6.3 OF 12 6.4 OF 12 6.5 TV5 .12 6.6 12 6.7 TTV .12 6.8 12 6.9 12 6.10 12 6.11 .12 6.12 12 6.13 13 7 , , , .13 7.1 .13 7.2 .13 7.3 13 8 13 8.1 .13 8.2 (DTA) .13 8.3

3、 .14 9 ( ) .15 10 X (face angle) .16 10.1 16 10.2 17 10.3 17 10.4 OF 17 KS C IEC 62276： 2007 ii 10.5 17 11 .17 11.1 .17 A( ) .19 A.1 19 B( ) 22 B.1 .22 B.2 .25 28 KS C IEC 62276： 2007 (2012 ) Single crystal wafers for surface acoustic wave(SAW) device applications Specifications and measuring method

4、s 2005 1 IEC 62276, Single crystal wafers for surface acoustic wave (SAW) device applications Specifications and measuring methods , . . 1996 IEC TC 49 , . . 1 (SAW) , (LN), (LT), (LBO), (LGS) . 2 . . ( ) . KS A IEC 60410, IEC 60758, Synthetic quartz crystal Specifications and guide to the use ISO 4

5、287, Geometrical Product Specifications(GPS) Surface texture： Profile method Terms, definitions and surface texture parameters 3 . 3.1 SAW KS C IEC 62276： 2007 2 3.1.1 (as-grown synthetic guartz crystal) . . IEC 60758 3.1.2 (lithimn niobate), LN ( ) , LiNbO3 3.1.3 (lithium tantalate), LT ( ) , LiTaO

6、3 3.1.4 (lithium tetraborate), LBO ( ), , Li2B4O7 3.1.5 (lanthanum gallium silicate), LGS ( ) , La3Ga5SiO14 3.2 (manufacturing lot) 3.3 LN LT 3.3.1 (Curie temperature), Tc (DTA) 3.3.2 (single domain) (LN LT) 3.3.3 polarization (or poling) process 3.4 3.4.1 (lattice constant) X KS C IEC 62276： 2007 3

7、 3.4.2 (congruent composition) 3.4.3 (twin) . . 3.5 (orientation flat), OF . . 1 ( 1 ) . 3.6 (secondary flat), SF OF . . ( 1 ) . 3.7 (flatness) 3.7.1 (fixed quality area), FQA , X , FQA X . 3.7.2 (refrence plane) , . . a) (chuck surface) b) FQA c) FQA (least-square fit) d) (one site) 3.7.3 (site) OF

8、 . FQA . 3.7.4 TV5( ) TV5 , . KS C IEC 62276： 2007 4 1 . 1 TV5 3.7.5 (Total Thickness Variation： TTV) TTV 3.7.2 a) . TTV 2 (A) (B) . 2 TTV 3.7.6 (warp) , 3 . 3.7.2 b) . . 3 3.7.7 (sori) , . , 3.7.2 c) . KS C IEC 62276： 2007 5 3.7.8 (Local Thickness Variation： LTV) ( 5 mm5 mm) . 3.7.2 a) . 4 . LTV ,

9、5 . LTV LTV . 4 LTV . FQA . 5 LTV . 3.7.9 (Percent Local Thickness Variation： PLTV) LTV . LTV . 3.7.10 (Focal Plane Deviation： FPD) 3.7.2 b) 3 , (FQA ) . FPD . 3.8 (back surface roughness) Ra ISO 4287 . 3.9 (surface orientation) KS C IEC 62276： 2007 6 3.10 (description of orientation and SAW propaga

10、tion) , “ ” . 0 . 1 . 1 LN LT LBO LGS 128 Y X Y Z 64 Y X X 112 Y 36 Y X ST X 45 X Z yxlt/48.5/26.6 3.11 ST (ST-cut) 42.75 Y X 0 20 42.75 . 3.12 (tolerance of surface orientation) X 3.13 (bevel) (rounding). “ (edge profile)” . “ ” “ (edge rounding)” . . 3.14 (diameter of wafer) OF SF 3.15 (wafer thic

11、kness) 3.16 3.16.1 (contamination) , . . , , , . 3.16.2 (crack) . KS C IEC 62276： 2007 7 3.16.3 (scratch) 5： 1 , 3.16.4 (chip) . . 3.16.5 (dimple) 3 mm , 3.16.6 (pit) 3.16.7 (orange peel) 3.16.8 (acceptable quality level), AQL AQL ( 100 ) 4 4.1 4.1.1 Z (seed) (arc) 5 , X . IEC 60758 . D (pieces/cm3)

12、 (pieces/cm2) 2 4.1.2 LN 4.1.3 LT 4.1.4 LBO, LGS KS C IEC 62276： 2007 8 4.2 . . (stepper) LTV . FPD TTV . (sori) (warp) , . 4.2.1 (76.20.25) mm( 3 .) (100.00.5) mm (125.00.5) mm (150.00.5) mm 4.2.2 100 mm (0.3 mm 0.5 mm)0.03 mm , 0.5 mm 0.8 mm 4.2.3 OF OF a) (22.03.0) mm(76.2 mm ) (32.53.0) mm(100 m

13、m ) (42.53.0) mm(125 mm ) (57.53.0) mm(150 mm ) b) ： 30 OF . OF X (1 1. 0) , OF X . 4.2.4 SF . a) SF SF . (11.24) mm(76.2 mm ) (18.04) mm(100 mm ) (27.54) mm(125 mm ) (37.54.5) mm(150 mm ) b) SF SF OF . 1.0 . c) . KS C IEC 62276： 2007 9 4.2.5 ( 2 ). 4.2.6 2 . 4.2.7 TV5 TTV 2 . 2 , , TV5, TTV ( Ra) (

14、 m) TV5(m) TTV(m) 0.5 m 30 10 10 76.2 mm (3 inch) 0.5 m 20 10 10 0.5 m 40 10 10 100 mm 0.5 m 30 10 10 2.0 m 50 15 15 2.0 m 0.5 m 40 15 15 76.2 mm (3 inch) 0.5 m 40 10 10 2.0 m 50 20 20 2.0 m 0.5 m 40 15 15 100 mm 0.5 m 40 10 10 2.0 m 60 20 20 2.0 m 0.5 m 50 15 15 125 mm 0.5 m 40 10 10 2.0 m 60 20 25

15、 2.0 m 0.5 m 50 15 20 LN, LT 150 mm 0.5 m 40 10 15 0.5 m 40 15 15 76.2 mm (3 inch) 0.5 m 40 10 10 0.5 m 40 20 20 LBO 100 mm 0.5 m 40 10 10 0.5 m 40 15 15 76.2 mm (3 inch) 0.5 m 40 10 10 0.5 m 40 20 20 LGS 100 mm 0.5 m 40 10 10 4.2.8 ( ) . . KS C IEC 62276： 2007 10 4.2.9 a) . b) 1) ： 0.5 mm ： 1.0 mm

16、2) . c) . d) . e) , , ： . 4.2.10 . ： 10 LN, LT, LBO ： 20 LGS ： 10 4.2.11 LN/LT/LBO/LGS ： . ： IEC 60758 1.4.2 . 4.2.12 . a) 76.2 mm 36 as 100 mm 47 as b) Z 3.5 mm , X . 4.2.13 . 4.2.14 LN/LT , . . LN： 1 133 1 145 , 3 LT： 598 608 , 3 KS C IEC 62276： 2007 11 4.2.15 . LT： a (0.515 380.000 02) nm 5 (samp

17、ling) . , . 5.1 , AQL 2.5 % , KS A IEC 60410 . AQL . 5.2 (sampling frequency) . , . a) 2 2 OF 2 b) 2 c) OF 2 d) 2 e) TV5 2 f) 2 g) TTV 2 5.3 (inspection of whole population) . a) OF SF b) c) d) e) 6 6.1 (OF SF ) . KS C IEC 62276： 2007 12 6.2 ASTM F533 ( 1 m) . 6.3 OF OF . 6.4 OF X . 10.4 10 . 6.5 TV

18、5 TV5 ASTM F533 ( 1 m) 6 mm . 6.6 . 6.7 TTV TTV . 6.8 11. . 6.9 . . 6.10 . 2 (Ra) (profilometry) . 6.11 X (10.1 9 ). 6.12 (8.1 ). KS C IEC 62276： 2007 13 6.13 X (9. ). 7 , , , 7.1 . . 7.2 . a) b) c) d) e) 7.3 . 8 8.1 (LT) (LN) . (Differential Thermal Analysis： DTA) . . . 8.2 (DTA) (DTA) . . . ( Al2O3) LN LT DTA . LN LT , . Tc . KS C IEC 62276： 2007 14 6 (DTA) 8.3 Z . . . ( 7) Z Pt Ag Pd . LCR . Tc . 7 KS C IEC 62276： 2007 15 9 ( ) , . (10 4) 10 5 . (10 6) . X . (Braggs law)