JEDEC JESD92-2003 Procedure for Characterizing Time- Dependent Dielectric Breakdown of Ultra-Thin Gate Dielectrics《超薄绝缘体口有时间决定的介质击穿的辨别规程》.pdf
《JEDEC JESD92-2003 Procedure for Characterizing Time- Dependent Dielectric Breakdown of Ultra-Thin Gate Dielectrics《超薄绝缘体口有时间决定的介质击穿的辨别规程》.pdf》由会员分享,可在线阅读,更多相关《JEDEC JESD92-2003 Procedure for Characterizing Time- Dependent Dielectric Breakdown of Ultra-Thin Gate Dielectrics《超薄绝缘体口有时间决定的介质击穿的辨别规程》.pdf(32页珍藏版)》请在麦多课文档分享上搜索。
1、JEDEC STANDARD Procedure for Characterizing Time-Dependent Dielectric Breakdown of Ultra-Thin Gate Dielectrics JESD92 AUGUST 2003 JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board o
2、f Directors level and subsequently reviewed and approved by the JEDEC legal counsel. JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating interchangeability and improvement of products, and
3、 assisting the purchaser in selecting and obtaining with minimum delay the proper product for use by those other than JEDEC members, whether the standard is to be used either domestically or internationally. JEDEC standards and publications are adopted without regard to whether or not their adoption
4、 may involve patents or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the JEDEC standards or publications. The information included in JEDEC standards and publications represen
5、ts a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint. Within the JEDEC organization there are procedures whereby a JEDEC standard or publication may be further processed and ultimately become an ANSI/EIA standard. No claims to b
6、e in conformance with this standard may be made unless all requirements stated in the standard are met. Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC at the address below, or call (703) 907-7559 or www.jedec.org Publis
7、hed by JEDEC Solid State Technology Association 2003 2500 Wilson Boulevard Arlington, VA 22201-3834 This document may be downloaded free of charge; however JEDEC retains the copyright on this material. By downloading this file the individual agrees not to charge for or resell the resulting material.
8、 PRICE: Please refer to the current Catalog of JEDEC Engineering Standards and Publications online at http:/www.jedec.org/Catalog/catalog.cfm Printed in the U.S.A. All rights reserved PLEASE! DONT VIOLATE THE LAW! This document is copyrighted by JEDEC and may not be reproduced without permission. Or
9、ganizations may obtain permission to reproduce a limited number of copies through entering into a license agreement. For information, contact: JEDEC Solid State Technology Association 2500 Wilson Boulevard Arlington, Virginia 22201-3834 or call (703) 907-7559 JEDEC Standard No.92 -i- PROCEDURE FOR C
10、HARACTERIZING TIME-DEPENDENT DIELECTRIC BREAKDOWN OF ULTRA-THIN GATE DIELECTRICS CONTENTS Page Foreword. i 1 Scope 1 2 Overview . 1 3 Terms and definitions 2 4 Constant voltage test procedure 4.1 Test configuration 4 4.2 Pre-characterization test.5 4.3 Pre-CVS oxide current test 6 4.4 Constant volta
11、ge stress test 7 4.5 Post-CVS oxide current test.12 4.6 Data recording12 4.7 Oxide failure categories .13 5 Bibliography . 14 Annex A: (informative) Supplemental data analysis A.1 Test structures.16 A.2 Determining Oxide Electric Field20 A.3 Extrapolation models .21 A.4 Determining Failure Rates .23
12、 TABLES 1 Oxide failure catagories.20 A.1 Reliability characteristics for weibull distributions .33 FIGURES 1 Stress gate current vs. time.16 2 Block diagram and timing diagram.18 JEDEC Standard No.92 -ii- PROCEDURE FOR CHARACTERIZING TIME-DEPENDENT DIELECTRIC BREAKDOWN OF ULTRA-THIN GATE DIELECTRIC
13、S Foreword This document is intended for use MOS integrated circuit manufacturing. It describes a test procedure for estimating the acceleration parameters of “wear-out” or Time-Dependent-Dielectric Breakdown (TDDB) of ultra-thin (tox10 X average value Iuse determined from the pre-characterization t
14、est, record as initial failure. 6) Optional: If ImeasIleak, record as yield failure. JEDEC Standard No. 92 Page 7 4 Constant voltage test procedure (contd) 4.4 Constant voltage stress test Devices that pass the pre-CVS test are then subject to the constant voltage test. In order that the compliance
15、circuit in the test equipment does not interfere with the determination of breakdown it is recommended that the compliance of the test system (Icomp) be at least 10X greater than Istress 4. 1) Apply or ramp the voltage to the stress voltage (Vstress) ensuring that voltage overshoots do not exceed 1%
16、 of Vstress. The voltage ramp time should be less that 1% of the anticipated time-to-fail (tbd). The minimum value is 100 ms. After the voltage ramp, the voltage is held at Vstress and the current is periodically monitored and logged to a data file. The current can be monitored at short time interva
17、ls (tmeas); however, the current should be recorded in the data file at time intervals (trecord). The record time interval should be less than 1% of the anticipated time-to-fail (tbd). For practical considerations trecordcan be evenly spaced log time intervals. The logged data can be used to validat
18、e the actual breakdown event. 2) The device is considered to have failed when one of the following breakdown conditions has been detected: a) Increase in measured oxide current For thicker oxides (tox 5 nm) or for small area test structures the oxide often fails by a sudden increase (10X) in measure
19、d oxide stress current. Imeas 10 X Iprevious. If this condition is met the test is terminated and the post-test is performed. Note that value of 10X increase is a recommended value. This value could range between 2-10X for actual hard breakdown events depending on capacitor area, thickness, structur
20、e, or process. The breakdown time and Imeasshould be recorded. The breakdown is classified as “Hard”. JEDEC Standard No. 92 Page 8 4 Constant voltage test procedure (contd) 4.4 Constant voltage stress test (contd) b) Increase in current noise 5 At a soft-breakdown oxide event the measurement noise i
21、ncreases. This increase in noise can be detected by analyzing the current measurement data using variance techniques. This test description assumes that the test system noise has already been determined as described in the pre-characterization test (See 4.2). In this test six consecutive current val
22、ues of Imeas(i) to Imeas(i+5) are recorded and the current noise (Imeas)2is calculated from these values as: NOTE The final value of (Imeas)2is essentially the estimator of the sample variance of five Imeasvalues. The current noise is continually calculated by adding a new current value and deleting
23、 the first value in the six-point set (i.e., a sliding sample set: Imeas(i+1) to Imeas(i+5). If the current noise increases by 500X over the baseline value determined in 3.2 for at least five additional calculations, then the device is defined as failed. The additional calculations performed past th
24、e detection of breakdown assures that the noise increase is sustained and not a result of a random fluctuation or a transient noise increase. The test is then terminated and the post-test performed. Note that value of 500X increase is a recommended value. This value could range between 200X and 500X
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- JEDECJESD922003PROCEDUREFORCHARACTERIZINGTIMEDEPENDENTDIELECTRICBREAKDOWNOFULTRATHINGATEDIELECTRICS 超薄

链接地址:http://www.mydoc123.com/p-807367.html