EN 60749-23-2004 en Semiconductor devices C Mechanical and climatic test methods Part 23 High temperature operating life (Incorporates Amendment A1 2011)《半导体器件 机械和气候试验方法 第23部分 高温操作.pdf

《EN 60749-23-2004 en Semiconductor devices C Mechanical and climatic test methods Part 23 High temperature operating life (Incorporates Amendment A1 2011)《半导体器件 机械和气候试验方法 第23部分 高温操作.pdf》由会员分享，可在线阅读，更多相关《EN 60749-23-2004 en Semiconductor devices C Mechanical and climatic test methods Part 23 High temperature operating life (Incorporates Amendment A1 2011)《半导体器件 机械和气候试验方法 第23部分 高温操作.pdf（12页珍藏版）》请在麦多课文档分享上搜索。

1、BRITISH STANDARDBS EN 60749-23:2004Semiconductor devices Mechanical and climatic test methods Part 23: High temperature operating lifeICS 31.080.01g49g50g3g38g50g51g60g44g49g42g3g58g44g55g43g50g56g55g3g37g54g44g3g51g40g53g48g44g54g54g44g50g49g3g40g59g38g40g51g55g3g36g54g3g51g40g53g48g44g55g55g40g39g

2、3g37g60g3g38g50g51g60g53g44g42g43g55g3g47g36g58+A1:2011 National forewordThis British Standard is the UK implementation of EN 60749-23:2004+A1:2011. It is identical with IEC 60749-23:2004, incorporating amendment 1:2011. It supersedes BS EN 60749-23:2004, which will be withdrawn on 3 March 2014.The

3、start and finish of text introduced or altered by amendment is indicated in the text by tags. Tags indicating changes to IEC text carry the number of the IEC amendment. For example, text altered by IEC amendment 1 is indicated by !“.The UK participation in its preparation was entrusted by Technical

4、Committee EPL/47, Semiconductors, to Subcommittee EPL/47/1, Film and hybrid integrated circuits.A list of organizations represented on this subcommittee can be obtained on request to its secretary.This publication does not purport to include all the necessary provisions of a contract. Users are resp

5、onsible for its correct application.Compliance with a British Standard cannot confer immunity from legal obligations.BS EN 60749-23:2004+A1:2011Amendments/corrigenda issued since publicationDate Comments 30 June 2011 Implementation of IEC amendment 1:2011, with CENELEC endorsement A1:2011This Britis

6、h Standard was published under the authority of the Standards Policy and Strategy Committee on24 June 2004 BSI 2011ISBN 978 0 580 68753 2EUROPEAN STANDARD EN 60749-23NORME EUROPENNE EUROPISCHE NORM CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electro

7、technique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: Avenue Marnix 17, B - 1000 Brussels 2004 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 60749-23:2004 E ICS 31.080.01 English version Semiconductor d

8、evices Mechanical and climatic test methods Part 23: High temperature operating life (IEC 60749-23:2004) Dispositifs semiconducteurs Mthodes dessais mcaniques et climatiques Partie 23: Dure de vie en fonctionnemement haute temprature (CEI 60749-23:2004) Halbleiterbauelemente Mechanische und klimatis

9、che Prfverfahren Teil 23: Lebensdauer bei hoher Temperatur (IEC 60749-23:2004) This European Standard was approved by CENELEC on 2004-04-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a

10、national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A versi

11、on in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, Czech Republ

12、ic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, Netherlands, Norway, Poland, Portugal, Slovakia, Slovenia, Spain, Sweden, Switzerland and United Kingdom. :2004+A1 March 2011 EN 7094-232:040 Foreword The text of document

13、47/1735/FDIS, future edition 1 of IEC 60749-23, prepared by IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 60749-23 on 2004-04-01. The following dates were fixed: latest date by which the EN has to be implemented at national level b

14、y publication of an identical national standard or by endorsement (dop) 2005-01-01 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2007-04-01 Annex ZA has been added by CENELEC. _ Endorsement notice The text of the International Standard IEC 60749-23:20

15、04 was approved by CENELEC as a European Standard without any modification. _ 2 egaPPage 2Foreword to amendment A1 The text of document 47/2017/CDV, future amendment 1 to IEC 60749-23:2004, prepared by IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved

16、by CENELEC as amendment A1 to EN 60749-23:2004 on 2011-03-03. Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent rights. The following dates were fi

17、xed: latest date by which the amendment has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2011-12-03 latest date by which the national standards conflicting with the amendment have to be withdrawn (dow) 2014-03-03 _ Endorsement notice Th

18、e text of amendment 1:2011 to the International Standard IEC 60749-23:2004 was approved by CENELEC as an amendment to the European Standard without any modification. _ BS EN 60749-23:2004+A1:2011EN 60749-23:2004+A1:2011 (E)CONTENTS 1 Scope.4 2 Normative references .4 3 Terms and definitions .4 4 Tes

19、t apparatus .5 4.1 Circuitry 5 4.1.1 Device schematic 5 4.1.2 Power5 4.2 Device mounting5 4.3 Power supplies and signal sources5 4.4 Environmental chamber.5 5 Procedure 5 5.1 Stress duration6 5.2 Stress conditions.6 5.2.1 Ambient temperature .6 5.2.2 Operating voltage 6 5.2.3 Biasing configurations

20、.6 6 Cool-down7 7 Measurements7 8 Failure criteria 8 9 Summary8 3 egaPPage 3BS EN 60749-23:2004+A1:2011EN 60749-23:2004+A1:2011 (E)MECHANICAL AND CLIMATIC TEST METHODS Part 23: High temperature operating life 1 Scope This test is used to determine the effects of bias conditions and temperature on so

21、lid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as “burn-in”, may be used to screen for infant morta

22、lity related failures. The detailed use and application of burn-in is outside the scope of this standard. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, th

23、e latest edition of the referenced document (including any amendments) applies. IEC 60747 (all parts), Semiconductor devices Discrete devices and integrated circuits IEC 60749-34: , Semiconductor devices Mechanical and climatic test methods Part 34: Power cycling 13 Terms and definitions For the pur

24、poses of this document, the following terms and definitions apply. 3.1 maximum operating voltage maximum supply voltage at which a device is specified to operate in compliance with the applicable device specification or data sheet 3.2 absolute maximum rated voltage maximum voltage that may be applie

25、d to a device, beyond which damage (latent or otherwise) may occur NOTE It is frequently specified by device manufacturers for a specific device and/or technology. 1To be published. Pa4 egPage 4BS EN 60749-23:2004+A1:2011EN 60749-23:2004+A1:2011 (E)3.3 absolute maximum rated junction temperature max

26、imum junction temperature of an operating device beyond which damage (latent or otherwise) may occur NOTE 1 It is frequently specified by device manufacturers for a specific device and/or technology. NOTE 2 Manufacturers may also specify maximum case temperatures for specific packages. 4 Test appara

27、tus The performance of this test requires equipment that is capable of providing the particular stress conditions to which the test samples will be subjected. 4.1 Circuitry The circuitry through which the samples will be biased must be designed taking into account several considerations, as outlined

28、 below. 4.1.1 Device schematic The biasing and operating schemes shall consider the limitations of the device and shall not overstress the devices or contribute to thermal runaway. 4.1.2 Power The test circuit shall be designed to limit power dissipation such that, if a device failure occurs, excess

29、ive power will not be applied to other devices in the sample. 4.2 Device mounting Equipment design, if required, shall provide for mounting of devices to minimize adverse effects while parts are under stress (e.g. improper heat dissipation). 4.3 Power supplies and signal sources Instruments (such as

30、 digital voltmeters, oscilloscopes, etc.) used to set up and monitor power supplies and signal sources shall be calibrated and have good long-term stability. 4.4 Environmental chamber The environmental chamber shall be capable of maintaining the specified temperature within a tolerance of 5 C throug

31、hout the chamber while parts are loaded and unpowered. 5 Procedure The sample devices shall be subjected to the specified or selected stress conditions for the time and temperature required. 5 egaPPage 5BS EN 60749-23:2004+A1:2011EN 60749-23:2004+A1:2011 (E)5.1 Stress duration The bias life duration

32、 is intended to meet or exceed an equivalent field lifetime under use conditions. The duration is established based on the acceleration of the stress. The stress duration is specified by the relevant specification. Interim measurements may be performed as necessary, subject to the restrictions in Cl

33、ause 7. 5.2 Stress conditions The stress condition shall be applied continuously (except during interim measurement periods). The time spent elevating the chamber to accelerated conditions, reducing chamber conditions to room ambient and conducting the interim measurements shall not be considered a

34、portion of the total specified test duration. 5.2.1 Ambient temperature Unless otherwise specified, the ambient temperature and bias for high temperature stress shall be adjusted to maintain the temperature within the desired range. Typically, a junction temperature of 125 C for 1 000 h is used for

35、this test. Unless otherwise specified, the ambient temperature for low temperature stress shall be a maximum of 10 C. 5.2.2 Operating voltage Unless otherwise specified, the operating voltage should be the maximum operating voltage specified for the device unless the conditions of 5.2.1 cannot be me

36、t. A higher voltage is permitted in order to obtain lifetime acceleration from voltage as well as temperature; this voltage shall not exceed the absolute maximum rated voltage for the device and shall be agreed upon by the device manufacturer. 5.2.3 Biasing configurations Biasing configurations deta

37、iled below may be bias stress (static or pulsed) or operating stress (dynamic). Depending upon the biasing configuration, supply and input voltages may be grounded or raised to a maximum potential chosen to ensure a stressing temperature not higher than the maximum-rated junction temperature. Device

38、 outputs may be unloaded or loaded, to achieve the specified output voltage level. If a device has a thermal shutdown feature, it shall not be biased in a manner that could cause the device to go into thermal shutdown. 5.2.3.1 High temperature forward bias (HTFB) The HTFB test is configured to forwa

39、rd bias major power handling junctions of the device samples. The devices may be operated in either a static or a pulsed forward bias mode. Pulsed operation is used to stress the devices at, or near, maximum-rated current levels. The particular bias conditions should be determined to bias the maximu

40、m number of the solid state junctions in the device. The HTFB test is typically applied on power devices, diodes and discrete transistor devices (not typically applied to integrated circuits). The HTFB test, when applied to power devices, is complementary to IEC 60749-34. Pa6 egPage 6BS EN 60749-23:

41、2004+A1:2011EN 60749-23:2004+A1:2011 (E)5.2.3.2 High temperature operating life (HTOL)/Low temperature operating life (LTOL) The HTOL/LTOL test is configured to bias the operating nodes of the device samples. The devices may be operated in a dynamic operating mode. Typically, several input parameter

42、s may be adjusted to control internal power dissipation. These include supply voltages, clock frequencies, input signals, etc. that may be operated even outside their specified values, but resulting in predictable and non-destructive behaviour of the devices under stress. The particular bias conditi

43、ons should be determined to bias the maximum number of potential operating nodes in the device. The HTOL test is typically applied on logic and memory devices. The LTOL test is intended to look for failures caused by hot carriers and is typically applied on memory devices or devices with submicron d

44、evice dimensions. 5.2.3.3 High temperature reverse bias (HTRB) The HTRB test is configured to reverse bias major power handling junctions of the device samples. The devices are characteristically operated in a static operating mode at, or near, maximum rated breakdown voltage and/or current levels.

45、The particular bias conditions should be determined to bias the maximum number of the solid state junctions in the device. The HTRB test is typically applied on power devices. 5.2.3.4 High temperature gate bias (HTGB) The HTGB test biases gate or other oxides of the device samples. The devices are n

46、ormally operated in a static mode at, or near, maximum rated oxide breakdown voltage levels. The particular bias conditions should be determined to bias the maximum number of gates in the device. The HTGB test is typically used for power devices. 6 Cool-down Devices on high temperature stress shall

47、be cooled to 55 C or lower before removing the bias. Cooling under bias is not required for a given technology, if verification data is provided by the manufacturer. The interruption of bias for up to 1 min, for the purpose of moving the devices to cool-down positions separate from the chamber withi

48、n which life testing was performed, shall not be considered removal of bias. All specified electrical measurements shall be completed prior to any reheating of the devices, except for interim measurements subject to the restrictions of Clause 7. NOTE Bias refers to application of voltage to power pi

49、ns. 7 Measurements The measurements, specified in the applicable life test specification, shall be made at the beginning of the life test, at the end of each interim period and at the conclusion of the life test. Interim and final measurements may include high temperature testing. However, testing at elevated temperatures shall only be performed after completion of specified room (and lower) temperature test measurements. After interim testing, bias shall be applied to the parts before heat is applie