EN 60749-22-2003 en Semiconductor devices - Mechanical and climatic test methods Part 22 Bond strength《半导体器件 机械和气候试验方法 第22部分 粘结强度 IEC 60749-22-2002》.pdf

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1、BRITISH STANDARD BS EN 60749-22:2003 Semiconductor devices Mechanical and climatic test methods Part 22: Bond strength The European Standard EN 60749-22:2003 has the status of a British Standard ICS 31.080.01 BS EN 60749-22:2003 This British Standard was published under the authority of the Standard

2、s Policy and Strategy Committee on 4 July 2003 BSI 4 July 2003 ISBN 0 580 42199 6 National foreword This British Standard is the official English language version of EN 60749-22:2003. It is identical with IEC 60749-22:2002. It partially supersedes BS EN 60749:1999 which will be withdrawn on 2005-10-

3、01. The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors, which has the responsibility to: A list of organizations represented on this committee can be obtained on request to its secretary. Cross-references The British Standards which implement internat

4、ional or European publications referred to in this document may be found in the BSI Catalogue under the section entitled “International Standards Correspondence Index”, or by using the “Search” facility of the BSI Electronic Catalogue or of British Standards Online. This publication does not purport

5、 to include all the necessary provisions of a contract. Users are responsible for its correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. aid enquirers to understand the text; present to the responsible international/European committee a

6、ny enquiries on the interpretation, or proposals for change, and keep the UK interests informed; monitor related international and European developments and promulgate them in the UK. Summary of pages This document comprises a front cover, an inside front cover, the EN title page, pages 2 to 20, an

7、inside back cover and a back cover. The BSI copyright date displayed in this document indicates when the document was last issued. Amendments issued since publication Amd. No. Date CommentsEUROPEAN STANDARD EN 60749-22 NORME EUROPENNE EUROPISCHE NORM June 2003 CENELEC European Committee for Electrot

8、echnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B - 1050 Brussels 2003 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No.

9、 EN 60749-22:2003 E ICS 31.080.01 English version Semiconductor devices - Mechanical and climatic test methods Part 22: Bond strength (IEC 60749-22:2002) Dispositifs semiconducteurs - Mthodes dessais mcaniques et climatiques Partie 22: Robustesse des contacts souds (CEI 60749-22:2002) Halbleiterbaue

10、lemente - Mechanische und klimatische Prfverfahren Teil 22: Kontaktfestigkeit (Bond strength) (IEC 60749-22:2002) This European Standard was approved by CENELEC on 2002-09-24. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this

11、 European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions

12、 (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Aus

13、tria, Belgium, Czech Republic, Denmark, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Luxembourg, Malta, Netherlands, Norway, Portugal, Slovakia, Spain, Sweden, Switzerland and United Kingdom. EN 64709-2202:30 - - 2 Foreword The text of the International Standard IEC 60749-22:2

14、002 was approved by CENELEC as EN 60749-22 on 2002-09-24. The text of this International Standard was reproduced from IEC 60749:1996, chapter 2, clause 6 without change. Therefore, it has not been submitted to vote a second time and is still based on documents 47/1394/FDIS et 47/1477/FDIS. The follo

15、wing dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2004-01-01 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2005-10-01 Each test method go

16、verned by this standard and which is part of the series is a stand-alone document, numbered EN 60749-2, EN 60749-3, etc. The numbering of these test methods is sequential, and there is no relationship between the number and the test method (i.e. no grouping of test methods). The list of these tests

17、will be available in the CENELEC internet site and in the catalogue. Updating of any of the individual test methods is independent of any other part. Annexes designated “normative“ are part of the body of the standard. In this standard, annex A is normative. _ Endorsement notice The text of the Inte

18、rnational Standard IEC 60749-22:2002 was approved by CENELEC as a European Standard without any modification. _ Page2 EN6074922:2003CONTENTS INTRODUCTION.4 1 Scope and object5 1.1 General description of the test.5 1.2 Description of the test apparatus (for all methods).5 2 Methods A and B (see also

19、annex A)5 2.1 Scope5 2.2 General description of the test.6 3 Method C7 3.1 Scope7 3.2 Method C: Bond peel.7 4 Method D7 4.1 Scope7 4.2 Method D: Bond shear (applied to flip chip) .8 5 Methods E and F 8 5.1 Scope8 5.2 Method E: Push-off test.8 5.3 Method F: Pull-off test .9 5.4 Failure criteria for b

20、oth methods E and F:9 5.5 Force to be applied (both methods) .9 6 Method G: Wire ball shear test .9 6.1 Scope9 6.2 General description.10 6.3 Terms and definitions 10 6.4 Equipment and material.13 6.5 Procedure.14 6.6 Acceptable test limits 15 7 Information to be given in the relevant specification

21、.17 Annex A (normative) Guidance 19 Page3 EN6074922:2003INTRODUCTION Activity within IEC technical committee 47, working group 2, includes the generation, coordination and review of climatic, electrical (of which only ESD, latch-up and electrical conditions for life tests are considered), mechanical

22、 test methods, and associated inspection techniques needed to assess the quality and reliability of the design and manufacture of semiconductor products and processes. Page4 EN6074922:2003SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 22: Bond strength 1 Scope and object This part o

23、f IEC 60749 is applicable to semiconductor devices (discrete devices and integrated circuits). The object of this part is to measure bond strength or determine compliance with specified bond strength requirements. NOTE This test is identical to the test method contained in clause 6 of chapter 2 of I

24、EC 60749 (1996), amendment 1, apart from changes to this clause and renumbering. 1.1 General description of the test Seven test methods are described, each having its own purpose, that is: methods A and B are intended for testing internal bonds of a device by a direct pulling of the connecting wire;

25、 method C is intended for bonds external to the device and consists of a peeling stress exerted between the lead or terminal and the board or substrate; method D is intended for internal bonds and consists of a shear stress applied between a die and a substrate or similar face-bonded configurations;

26、 methods E and F are intended for external bonds and consist of a push-off or a pull-off stress exerted between a die and the substrate; method G is intended to test the mechanical resistance of wire bonds to a shear force. 1.2 Description of the test apparatus (for all methods) The apparatus for th

27、is test should consist of suitable equipment for applying the specified stress on the bond, lead wire or terminals as required in the specified test method. A calibrated measurement and indication of the applied stress in newtons (N) at the point of failure should be provided by equipment capable of

28、 measuring stresses up to and including 100 mN with an accuracy of 2,5 mN, stresses between 100 mN and 500 mN with an accuracy of 5 mN, and stresses exceeding 500 mN with an accuracy of 2,5 % of the indicated value. 2 Methods A and B (see also annex A) 2.1 Scope This test is intended to be applied t

29、o the wire-to-die bond, wire-to-substrate bond, or the wire- to-terminal bond inside the package of wire-connected semiconductor devices bonded by soldering, thermocompression, ultrasonic and other related techniques. Page5 EN6074922:20032.2 General description of the test 2.2.1 Method A: Wire pull

30、(applied to bonds separately) The wire connecting the die or substrate should be cut so as to provide two ends accessible for a pull test. In the case of short wire runs, it may be necessary to cut the wire close to one termination in order to allow the pull test at the opposite termination. The wir

31、e should be gripped in a suitable device and simple pulling action applied to the wire or to the device (with the wire clamped) in such a manner that the force is applied within 5 of the parallel to the surface of the die or substrate in the case of a stitch bond. 2.2.2 Method B: Wire pull (applied

32、to two bonds simultaneously) A hook should be inserted under the lead wire connecting the die or substrate to the terminal, and a pull applied to the hook with the device clamped. The pulling force is applied approximately in the middle of the wire in a direction within 5 of the normal to the die or

33、 substrate surface or normal to a straight line between the bonds. 2.2.3 The pulling force should be progressively increased until the wire or a bond breaks (item a) in 2.2.4) or until the minimum force has been reached (item b) in 2.2.4). 2.2.4 Failure criteria a) For determining acceptance, the va

34、lue of the pulling force at which the wire or bond breaks should be recorded and compared with that given in table 2 (see note). For wire diameters not specified in table 2, the curves of figure 3 should be used to determine the bond pull limit. The curves are only applicable to bond pulls normal to

35、 the die. b) As an alternative procedure, the pulling force is increased to the specified minimum value (see note). If neither the wire nor the bond is broken, the bond is considered to have passed the test. NOTE The pulling force should be modified where relevant (for example, for method B) by usin

36、g the information given in the annex. 2.2.5 Classification of failures When specified, broken wires or bonds should be classified as follows: a) wire break at neckdown point (reduction of section due to bonding process); b) wire break at a point other than neckdown; c) failure in bond (interface bet

37、ween wire and metallization) at the die; d) failure in bond (interface between wire and metallization) at substrate, package post or any point other than at the die; e) metallization lifted from the die; f) metallization lifted from the substrate or package post; g) fracture of the die; h) fracture

38、of the substrate. NOTE Method B is not recommended for the purpose of measuring the absolute value of the bond strength (see annex A). However, it may be used for testing the bond quality on a comparative basis during the manu- facturing process. Page6 EN6074922:20033 Method C 3.1 Scope This test is

39、 normally intended to be applied to bonds external to the device package. 3.2 Method C: Bond peel The lead or terminal and the device package should be gripped or clamped in such a manner that a peeling stress is exerted with the specified angle between the lead or terminal and the board or substrat

40、e. Unless otherwise specified, an angle of 90 should be used. 3.3 The pulling force should be progressively applied until the lead (or terminal) or the bond breaks (see 3.4.1) or until the minimum force has been reached (see 3.4.2). 3.4 Failure criteria 3.4.1 For determining acceptance, the value of

41、 the pulling force at which the bond breaks should be recorded and compared with that given in table 2. For wire diameters not specified in table 2, the curves of figure 3 should be used to determine the bond pull limit. The curves are only applicable to bond pulls normal to the die. The result of t

42、he test is valid only if the bond itself is the first to fail when the pulling force is applied. Only instances in which the bond itself breaks shall be counted as failures. 3.4.2 As an alternative procedure, the pulling force is increased to the specified minimum value. If neither the lead (or term

43、inal) nor the bond is broken, the bond is considered to have passed the test. 3.5 Classification of failures When specified, broken leads (or terminals) or bonds should be classified as follows: a) lead (or terminal) break at a deformation point (weld affected region); b) lead (or terminal) break at

44、 a point not affected by the bonding process; c) failure in the bond interface (in the solder, or at a point of weld interface between the lead (or terminal) and the board or the substrate conductor to which the bond was made); d) conductor lifted from the board or substrate; e) fracture within the

45、board or substrate. 4 Method D 4.1 Scope This test is normally intended to be applied to internal bonds between a semiconductor die and a substrate to which it is attached in a face-bonded configuration. It may also be used to test the bonds between a substrate and an intermediate carrier or seconda

46、ry substrate on which the die is mounted. Page7 EN6074922:20034.2 Method D: Bond shear (applied to flip chip) A suitable tool or wedge should be brought in contact with the die (or carrier) at a point just above the primary substrate and a force applied perpendicular to one edge of the die (or carri

47、er) and parallel to the primary substrate, to cause bond failure by shear. 4.3 The force should be progressively increased until the bonds break (see 4.4.1) or until the minimum force (see 4.4.2) has been reached. 4.4 Failure criteria 4.4.1 For determining acceptance, the value of the force at which

48、 the bonds break should be recorded. It should be not less than 50 mN multiplied by the number of bonds. The result of the test is valid only if the bonds themselves are the first to fail when the force is applied. Only instances in which the bond itself breaks shall be counted as failures. 4.4.2 As

49、 an alternative procedure, the force is increased to 50 mN multiplied by the number of bonds. If neither the bonds nor the substrate or die are broken, the bonds are considered to have passed the test. 4.5 Classification of failures When specified, the failures should be classified as follows: a) failure in the bond material, or bonding pedestal, where applicable; b) fracture in the die (or carrier) or substrate (that is, removal of a port