DLA SMD-5962-99617 REV B-2002 MICROCIRCUIT LINEAR RADIATION HARDENED FULL BRIDGE N-CHANNEL FET DRIVER MONOLITHIC SILICON《微型电路 线型 辐射加固 全桥式N通道FET驱动器 单块硅》.pdf

《DLA SMD-5962-99617 REV B-2002 MICROCIRCUIT LINEAR RADIATION HARDENED FULL BRIDGE N-CHANNEL FET DRIVER MONOLITHIC SILICON《微型电路 线型 辐射加固 全桥式N通道FET驱动器 单块硅》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-99617 REV B-2002 MICROCIRCUIT LINEAR RADIATION HARDENED FULL BRIDGE N-CHANNEL FET DRIVER MONOLITHIC SILICON《微型电路 线型 辐射加固 全桥式N通道FET驱动器 单块硅》.pdf（27页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make change to peak pull-up current test as specified in table I. - ro 00-02-08 R. MONNIN B Make changes to paragraph 1.5. Paragraph 4.4.4.3 Dose rate upset testing deleted. Drawing updated to reflect current requirements. gt 02-08-30 R. Monnin R

2、EV SHET REV B B B B B B B B B B B B SHEET 15 16 17 18 19 20 21 22 23 24 25 26 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS

3、, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY RAYMOND MONNIN AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 00-01-12 MICROCIRCUIT, LINEAR, RADIATION HARDENED, FULL BRIDGE N-CHANNEL FET DRIVER, MONOLITHIC SILICON AMSC N/A REVISIO

4、N LEVEL B SIZE A CAGE CODE 67268 5962-99617 SHEET 1 OF 26 DSCC FORM 2233 APR 97 5962-E399-02 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWIN

5、G SIZE A 5962-99617 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and

6、for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T

7、, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 F 99617 01 V S C Federal stock class designator RHA designator

8、 (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator

9、. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit

10、 function 01 HS-4080ARH Radiation hardened, DI, full bridge N-channel FET driver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the require

11、ments for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality manage

12、ment plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style S CDFP3-F20 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-

13、38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99617 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute

14、 maximum ratings. 1/ 2/ 3/ Supply voltage (VDDand VCC). -0.3 V to 16 V Logic I / O voltages. -0.3 V to VDD+0.3 V Voltage on AHS, BHS. -6.0 V (transient) to 80 V (-55C to +125C) Voltage on ALS, BLS -2.0 V (transient) to + 2.0 V (transient) Voltage on AHB, BHB. VAHS, BHS0.3 V to VAHS, BHS+VDDVoltage o

15、n ALO, BLO. VALS, BLS0.3 V to VCC+0.3 V Voltage on AHO, BHO VAHS, BHS0.3 V to VAHB, BHB+0.3 V Input current, HDEL and LDEL. -5 mA to 0 mA Maximum power dissipation (PD) (TA +25C) 1.8 W Junction temperature (TJ). +175C Storage temperature range -55C to +150C Lead temperature (soldering, 10 seconds).

16、+300C Thermal resistance, junction-to-case (JC) 7C/W Thermal resistance, junction-to-ambient (JA) . 80C/W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage (VDDand VCC). +12.0 V to +15.0 V Voltage on ALS, BLS . -1.0 V to +1.0 V Voltage on AHS, BHS. VAHS, BHS+ 5 V to VAHS, BHS+15 V Input cur

17、rent, HDEL and LDEL. -500 A to 50 A Ambient operating temperature range (TA) -55C to +125C 1.5 Radiation features: Single Event Phenomenon (SEP) effective LET no upset . -IN, IOH= -250 A 1,2,3 01 VDD0.4 V V M,D,P,L,R,F 2/ 1 VDD0.4 V OUTPUT low level output voltage VOL+IN -IN, IOL= 250 A 1,2,3 0.4 V

18、M,D,P,L,R,F 2/ 1 0.4 High level output current IOHVOUT= 6 V 1,2,3 01 -1.5 mA M,D,P,L,R,F 2/ 1 -1.5 Low level output current IOLVOUT= 6 V 1,2,3 01 2.5 mA M,D,P,L,R,F 2/ 1 2.5 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,

19、-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99617 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups D

20、evice type Limits Unit Min Max INPUT pins: DIS section Low level input voltage VIL1,2,3 01 0.8 V M,D,P,L,R,F 2/ 1 0.8 High level input voltage VIH1,2,3 01 3.0 V M,D,P,L,R,F 2/ 1 3.0 Low level input current IILVIN= 0 V 1,2,3 01 -160 A M,D,P,L,R,F 2/ 1 -160 High level input current IIHVIN= 5 V 1,2,3 0

21、1 -150 A M,D,P,L,R,F 2/ 1 -150 INPUT pins: HEN section Low level input voltage VIL1,2,3 01 0.8 V M,D,P,L,R,F 2/ 1 0.8 High level input voltage VIH1,2,3 01 3.0 V M,D,P,L,R,F 2/ 1 3.0 Low level input current IILVIN= 0 V 1,2,3 01 -160 A M,D,P,L,R,F 2/ 1 -160 High level input current IIHVIN= 5 V 1,2,3 0

22、1 -150 A M,D,P,L,R,F 2/ 1 -150 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99617 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 9 DSCC FORM

23、2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Turn-on delay pins: LDEL and HDEL section LDEL, HDEL voltage VHDEL, VLDELIHDEL= ILDEL= -100 A 1,2,3 01 5.0 5.5 V

24、 M,D,P,L,R,F 2/ 1 5.0 5.5 Gate driver output pins; ALO, BLO AHO, and BHO section Low level output voltage VOLIOUT= 100 mA 1,2,3 01 1.4 V M,D,P,L,R,F 2/ 1 1.4 High level output voltage VCC- IOUT= -100 mA 1,2,3 01 1.6 V VOHM,D,P,L,R,F 2/ 1 1.6 Peak pull-up current +IOVOUT= 0 V 1,2,3 01 0.4 A M,D,P,L,R

25、,F 2/ 1 0.4 Peak pull-down current -IOVOUT= 12 V 1,2,3 01 0.4 A M,D,P,L,R,F 2/ 1 0.4 Under voltage, rising threshold +UV 1,2,3 01 8.0 10.0 V M,D,P,L,R,F 2/ 1 8.0 10.0 Under voltage, falling threshold -UV 1,2,3 01 7.5 9.5 V M,D,P,L,R,F 2/ 1 7.5 9.5 Under voltage, hystersis HYS 1,2,3 01 0.5 0.9 V M,D,

26、P,L,R,F 2/ 1 0.5 0.9 Switching section Lower turn-off propagation delay tLPHL3/ 9,10,11 01 450 ns ( +IN / -IN to ALO ) M,D,P,L,R,F 2/ 9 450 Upper turn-off propagation delay tLPHL3/ 9,10,11 01 1200 ns ( +IN / -IN to AHO ) M,D,P,L,R,F 2/ 9 1200 See footnotes at end of table. Provided by IHSNot for Res

27、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99617 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 10 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Cond

28、itions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Switching section Continued. Lower turn-off propagation delay tLPHL3/ 9,10,11 01 1200 ns ( +IN / -IN to BLO ) M,D,P,L,R,F 2/ 9 1200 Upper turn-off propagation delay tLPHL3/ 9,10,11 01 500 ns ( +IN /

29、-IN to BHO ) M,D,P,L,R,F 2/ 9 500 Lower turn-on propagation delay tLPLH3/ 9,10,11 01 650 ns ( +IN / -IN to BLO ) M,D,P,L,R,F 2/ 9 650 Lower turn-on propagation delay tHPLH3/ 9,10,11 01 1200 ns ( +IN / -IN to BHO ) M,D,P,L,R,F 2/ 9 1200 Lower turn-on propagation delay tLPLH3/ 9,10,11 01 1200 ns ( +IN

30、 / -IN to ALO ) M,D,P,L,R,F 2/ 9 1200 Upper turn-on propagation delay tHPLH3/ 9,10,11 01 600 ns ( +IN / -IN to AHO ) M,D,P,L,R,F 2/ 9 600 Rise time tR3/ 9,10,11 01 65 ns M,D,P,L,R,F 2/ 9 65 Fall time tF3/ 9,10,11 01 60 ns M,D,P,L,R,F 2/ 9 60 Turn-on input pulse width tPWIN-ON3/ 9,10,11 01 700 ns M,D

31、,P,L,R,F 2/ 9 700 Turn-off input pulse width tPWIN-OFF3/ 9,10,11 01 700 ns M,D,P,L,R,F 2/ 9 700 Disable turn-off propagation delay tDISLOW3/ 9,10,11 01 500 ns ( DIS lower outputs ) M,D,P,L,R,F 2/ 9 500 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitte

32、d without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99617 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 11 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise

33、specified Group A subgroups Device type Limits Unit Min Max Switching section Continued. Disable turn-off propagation delay tDISHIGH3/ 9,10,11 01 450 ns (DIS upper outputs) M,D,P,L,R,F 2/ 9 450 Disable to lower turn-on propagation delay tDLPHL3/ 9,10,11 01 750 ns (DIS ALO and BLO) M,D,P,L,R,F 2/ 9 7

34、50 Refresh pulse width (ALO and BLO) tREF-PW 3/ 9,10,11 01 450 ns M,D,P,L,R,F 2/ 9 450 Disable to upper enable (DIS AHO and BHO) tUEN3/ 9,10,11 01 1250 ns M,D,P,L,R,F 2/ 9 1250 HEN-AHO, BHO turn-off, propagation delay tHEN-PHL3/ 9,10,11 01 450 ns M,D,P,L,R,F 2/ 9 450 HEN-AHO, BHO turn-on, propagatio

35、n delay tHEN-PLH3/ 9,10,11 01 500 ns M,D,P,L,R,F 2/ 9 500 1/ Unless otherwise specified, VDD= VCC= VAHB= VBHB= 12 V and VSS= VALS= VBLS= VAHS= VBHS= 0 V. 2/ Devices supplied to this drawing meet all levels M, D, P, L, R, and F for device classes M, Q, and V and for device class T, will meet levels M

36、, D, P, L, and R of irradiation. However, this device is only tested at the “F“ level for device classes M, Q, and V and at the “R” level for device class T (see 1.5 herein). Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electri

37、cal measurements for any RHA level, TA= +25C. 3/ RHDEL= RLDEL= 10 k and CL= 1000 pF. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99617 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEV

38、EL B SHEET 12 DSCC FORM 2234 APR 97 Device type 01 Case outline S Terminal number Terminal symbol 1 BHB 2 HEN 3 DIS 4 VSS5 OUT6 +IN 7 -IN8 HDEL 9 LDEL 10 AHB 11 AHO 12 AHS 13 ALO14 ALS 15 VCC16 VDD17 BLS 18 BLO 19 BHS 20 BHO FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproductio

39、n or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99617 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 13 DSCC FORM 2234 APR 97 PIN number SYMBOL DESCRIPTION 1 BHB B high-side bootstrap supply. External bootstrap diode a

40、nd capacitor are required. Connect cathode of bootstrap diode and positive side of bootstrap capacitor to this pin. Internal charge pump supplies 15 A out of this pin to maintain bootstrap supply. Internal circuitry clamps the bootstrap supply to approximately 15.0 V maximum. 2 HEN High-side enable

41、input. Logic level input that when low overrides +IN/-IN. (Pins 6 and 7) to put AHO and BHO drivers (pins 11 and 20) in low output state. When HEN is high AHO and BHO are controlled by +IN/-IN inputs. The pin can be driven by signal levels of 0 V to 15 V (no greater than VDD). An internal 100 A pull

42、-up to VDDwill hold HEN high , so no connection is required if high-side and low-side outputs are to be controlled by +IN/-IN inputs. 3 DIS Disable input. Logic level input that when taken high sets all four outputs low. DIS high overrides all other inputs. When DIS is taken low the outputs are cont

43、rolled by the other inputs. The pin can be driven by signal levels of 0 V to 15 V (no greater than VDD). An internal 100 A pull-up to VDDwill hold DIS high if this pin is not driven. 4 VSSChip negative supply, generally will be ground. 5 OUT Output of the input control comparator. This output can be

44、 used for feedback and hysteresis. 6 +IN Noninverting input of control comparator. This pin can only be driven by signal levels of 0 V to 4.5 V. If +IN is greater than IN (pin 7), than ALO and BHO are low level outputs and BLO and AHO are high level outputs. If +IN is less than IN than ALO and BHO a

45、re high level outputs and BLO and AHO are low level outputs. DIS (pin 3) high level will override +IN/-IN control for all outputs. HEN (pin 2) low level will override +IN/-IN control of AHO and BHO. When switching in four quadrant mode, dead time in a half bridge leg is controlled by HDEL and LDEL (

46、pins 8 and 9). 7 -IN Inverting input of control comparator. This pin can only be driven by signal levels of 0 V to 4.5 V. See +IN (pin 6) description. 8 HDEL High-side turn-on delay. Connect resistor from this pin to VSSto set timing current that defines the turn-on delay of both high-side drivers.

47、The low-side drivers turn-off with no adjustable delay, so the HDEL resistor guarantees no shoot-through by delaying the turn-on of the high-side drivers. HDEL reference voltage is approximately 5.2 V. 9 LDEL Low-side turn-on delay. Connect resistor from this pin to VSSto set timing current that def

48、ines the turn-on delay of both low-side drivers. The high-side drivers turn-off with no adjustable delay, so the LDEL resistor guarantees no shoot-through by delaying the turn-on of the low- side drivers. LDEL reference voltage is approximately 5.2 V. FIGURE 1. Terminal connections Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99617 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000