DLA SMD-5962-96895-1997 MICROCIRCUIT DIGITAL BICMOS HIGH-SPEED OPTICAL COPPER TRANSMITTER INTERFACE MONOLITHIC SILICON《双互补金属氧化物半导体 光学的铜传播器接口硅单片电路数字微电路》.pdf

《DLA SMD-5962-96895-1997 MICROCIRCUIT DIGITAL BICMOS HIGH-SPEED OPTICAL COPPER TRANSMITTER INTERFACE MONOLITHIC SILICON《双互补金属氧化物半导体 光学的铜传播器接口硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96895-1997 MICROCIRCUIT DIGITAL BICMOS HIGH-SPEED OPTICAL COPPER TRANSMITTER INTERFACE MONOLITHIC SILICON《双互补金属氧化物半导体 光学的铜传播器接口硅单片电路数字微电路》.pdf（24页珍藏版）》请在麦多课文档分享上搜索。

1、SMD-59b2-96895 9999996 OLLbL36 T2 LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV I I I DRAWING APPROVAL DATE 97-05-06 REVISION LEVEL SHEET * 5962-96895 SIZE CAGE CODE A 67268 SHEET 1 OF 23 SHEET REV STATUS OF SHEETS PMIC NIA STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPART

2、MENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA PREPAREDBY Larry T. Gauder DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 CHECKED BY Thomas M. Hess MICROCIRCUIT, DIGITAL, BICMOS, HIGH-SPEED OPTICAUCOPPER TRANSMITTER INTERFACE, MONOLITHIC SILICON APPROVEDBY Monica L. Poelking DSCC FORM

3、2233 5962-E028-97 APR 97 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Licensed by Information Handling ServicesSMD-5b2-b35 b 0336337 907 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 9 1. SCOPE A 5962-96895 REVISION LEVEL

4、SHEET 2 1.1 Scoe. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class v). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When availa

5、ble, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 m. The PIN is as shown in the following example: 5962 96895 - o1 LL I I Federal RHA stock class designator designator (see 1.2.1) Device class Device type (see 1.2.2) designata Case Lead outline finish (see 1.2.

6、4) (see 1.2.5) (see-I .2.3) V Drawing number 1.2.1 RHA desianator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and a

7、re marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device tvDe(sl. The device type(s) identify the circuit function as follows: Device tvDe Generic number Circuit function o1 78923 High-speed opticalkopper transmitter interface 1.2.3 Device class des ianator.

8、 The device class designator is a single letter identifying the product assurance level as Sllows: Device class Device reauirements docu mentation Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A

9、 QorV Certification and qualification to MIL-PRF-38535 I .2.4 Case outlinek). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriotive desianator Terminals Packaae style 3 CQCC2-N28 28 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as speci

10、fied in MIL-PRF-38535 for device classes Q and V or LAIL-PRF-38535, appendix A for device class M. DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesI .3 Absolute maximum ratine. i/ Supply voltage range o/,) to ground potential continuous - - - - - - - - - - - - - - - - - - - - - DC vol

11、tage range applied to output - - - - - - - - - - - - - - - - - - - DC output current (PECL HIGH) - - - - - - - - - - - - - - - - - - - - - - Storage temperature range - - - - - - - - - - - - - - - - - - - - - - - - Maximum power dissipation (P ) 21- - - - - - - - - - - - - - - - - - - Lead temperatu

12、re (soldering, 18 seconds) - - - - - - - - - - - - - - Thermal resistance, Junction to case (eJc) - - - - - - - - - - - - - - DC input voltage range - - - - - - - - - - - - - - - - - - - - - - - - - - - - DC output current (TTL LOW) - - - - - - - - - - - - - - - - - - - - - - - DC input current - -

13、- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Junction temperature vJ) - - - - - - - - - - - - - - - - - - - - - - - - - - 1.4 Recommended oDeratina conditions. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012)- - - - - - - - - - - - - - - -0.5 V

14、 to +7.0 V -0.5 V to V maximum -0.5 V to +?% V 30 mA -30 to +0.5 mA -65“ C to +I 50“ C 1.0 w 260“ C See MIL-STD-1835 155C -50 mA +4.5 V dc to +5.5 V dc 2.2 v 2.0 v -55C to +125“c 0.8 v XX percent 31 2. APPLICABLE DOCUMENTS 2.1 Government sDecification. standards. and handbooks. The following specifi

15、cation, standards, and handbooks form a 3art of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solici

16、tation. SPECIFICATION MILITARY MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS MILITARY MIL-STD-883 -. Test Methods and Procedures for Microelectronics. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Microcircuit Case Outlines. - I/ Stresses above the

17、 absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 21 Must withstand the added P due to short circuit test; e.g., Ist. i/ Values will be added when ttey become available. I SIZE 1 I 5962-96895 RE

18、VISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesSMD-5962-76895 W 9999996 OLLbL39 78L W STAN DARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 HAND

19、BOOKS SIZE A 5962-96895 REVISION LEVEL SHEET 4 MILITARY MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs). MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization 2.2 Order of

20、Drecedence. In the event of a conflict between the text of this drawing and the references cited herein, the text Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191 11-5094.) of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and r

21、egulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item reauirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The

22、modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Desian. construction. and Dhvsical dim

23、ensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case out iinek). The case outline(s) shall be in accordance with 1.2.4 herein . 3.2.2 Terminal con

24、nections. The terminal connections shall be as specified on figure 1 . 3.2.3 Truth tablek). The truth table(s) shall be as specified on figure 2. 3.2.4 Functional block diaaramkl. The functional block diagram(s) shall be as specified on figure 3. 3.2.5 Radiation exeosure circuit. The radiation expos

25、ure circuit shall be as specified when available. 3.3 Elect rical Derformance characteristics and postirradiation Darameter limits. Unless otherwise specified herein, the electrical performance-characteristics and postirradiation parameter limits are as specified in table I and shall apply over the

26、full case operating temperature range. 3.4 Electrical test reauirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Markinq. The part shall be marked with the PIN listed in 1.2 herein. In addition,

27、 the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall

28、.still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/comDliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q as required

29、in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of comPliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of th

30、is drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of

31、supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certifi MIL-PRF-38535 or for device class M in MIL-PRF-38535, appen

32、dix A shall be provided with each lot of microcircuits delivered to this drawing. . A certificate of conformance as required for device classes Q and V in I I I DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesSMD-59b2-96895 9999996 0116140 4T3 Test Symbol Conditions GroupA Device -55C

33、 i TC - output WILL BE VALID WILL CHANGE FROM HTO L WILL CHANGE FROM LTO H CHANG I NG STATE UNKNOWN HIGH IMPEDANCE U -I- scio SVS BISTEN VALID DATA FIGURE 4. Switchina waveforms and test circuit. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 I SIZE I IAI I RE

34、VISION LEVEL I 5962-96895 SHEET 14 I I I DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesSMD-5962-96875 9999996 OLlbL50 342 CKW DO-7 svs BISTEN sc/ t- tll-l DISABLE - RP ENABLE . FIGURE 4. Switchina waveforms and test circuit - Continued. I I I STAN DARD MICROCIRCUIT DRAWING DEFENSE S

35、UPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 I 5962-96895 I SHEET15 REVISION LEVEL I DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesSMD-59b2-9b895 M 9999996 OLLbL5L 289 M TTL INPUT WAVEFORM USED FOR TABLE I AC ELECTRICAL PERFORMANCE TESTING1 vouTor these tests shall have been faul

36、t graded in accordance with MIL-STD-883, test method 5012 (see I .5 herein). TABLE II. Electrical test reauirements. Subgroups (in accordance with MIL-PRF-38535, table I I I) Test requirements Device class M Interim electrical Darameters (see 4.2) Device class Q Final electrical parameters (see 4.2)

37、 Group A test requirements (see 4.4) - 1/1,2,3,7,8,9,10, Il 1,2,3,7, 11 8, 9, 1,2,3,4,7,8,9, IO, 11 9, 10,ll 1,2, 3,4, 7, 8, 10,ll Group C end-point electrical Group D end-point electrical Group E end-point electrical parameters (see 4.4) parameters (see 4.4) parameters (see 4.4) Device class V 1,2,

38、3 1,2,3 1,2,3 1,2,3 1,2,3 1,2,3 - 21 1, 2, 3,7, 8,9 10,ll STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 1 I 2, 3,4, 7, 8,9, 10,ll A 5962-96895 REVISION LEVEL SHEET 19 - I/ PDA applies to subgroup I. - 2/ PDA applies to subgroups 1 and 7. 4.4.2 Grow C insDecti

39、on. The group C inspection end-point electrical parameters shall be as specified in table II herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition C. The test circuit shall be maintained by the manufacturer under docu

40、ment revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883. b. TA = +125“ C,

41、minimum. c. Test duration; 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature or approved alternatives shall be as specified in the device manufacturers QM pl

42、an in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturers TRB in accordance with MIL PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs,

43、 outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883. I SIZE I I I I I DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesSMD-59b2-9b895 b OLLbL55 924 M 4.4.3 Grow D insDection. The group D inspection end-point

44、 electrical parameters shall be as specified in table II herein. 4.4.4 GrouD E insDection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table II herein. b. For device cl

45、asses Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA

46、 level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25“C fFC, after exposure, to the subgroups specified in table II herein. c. When specified in the purchase order or contract, a copy of the RHA delta limits shal

47、l be supplied. 5. PACKAGING 5.1 Packaaing reauirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device 6. NOTES classes Q and V or MIL-PRF-38535, appendix A for device class M. 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Go

48、vernment microcircuit applications (original equipment), design applications, and logistics purposes. contractor-prepared specification or drawing. 6.1 .I Reolaceability. Microcircuits covered by this drawing will replace the same generic device covered by a 6.1.2 Subst itutability. Device class Q d

49、evices will replace device class M devices. 6.2 Confiauration control of SMDs. All proposed changes to existing SMDs will be coordinated with the users of record for the individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692, Engineering Change Proposal. application requires configuration control and which SMDs are applicable to that system. DSCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microele