DLA SMD-5962-97512 REV D-2005 MICROCIRCUIT LINEAR RADIATION HARDENED DUAL WIDEBAND HIGH INPUT IMPEDANCE UNCOMPENSATED OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射双多种频率的高输入阻抗未补偿运算放大.pdf
《DLA SMD-5962-97512 REV D-2005 MICROCIRCUIT LINEAR RADIATION HARDENED DUAL WIDEBAND HIGH INPUT IMPEDANCE UNCOMPENSATED OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射双多种频率的高输入阻抗未补偿运算放大.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-97512 REV D-2005 MICROCIRCUIT LINEAR RADIATION HARDENED DUAL WIDEBAND HIGH INPUT IMPEDANCE UNCOMPENSATED OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射双多种频率的高输入阻抗未补偿运算放大.pdf(23页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to VIO, IIB, IIO, AVOL, CMRR, IOUT, ICC, CLSG, SR, tR, tF, and OS tests as specified under TABLE I. Also make changes to FIGURE 4. ro 97-09-12 R. MONNIN B Add 3.1.1 and APPENDIX A. -ro 98-12-17 R. MONNIN C Drawing updated to reflect
2、current requirements. -gt 03-01-16 R. MONNIN D Add enhanced low dose rate effects (ELDRS) paragraph to 1.5 and table I. -rrp 05-10-14 R. MONNIN REV SHET REV D D D D D D D D SHEET 15 16 17 18 19 20 21 22 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC
3、N/A PREPARED BY RICK C. OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH R. PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, RADIATION HARDENED, DUAL W
4、IDEBAND, HIGH INPUT IMPEDANCE UNCOMPENSATED OPERATIONAL AMPLIFIER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 97-03-20 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-97512 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E499-05 Provided by IHSNot for ResaleNo
5、reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97512 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels cons
6、isting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the
7、PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 97512 01 V X X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device class
8、es Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA d
9、evice. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-22620 Radiation hardened, S.O.I. dual wideband, high input impedance, uncompensated operational amplifier 1.2.3 Device class designator. The device class design
10、ator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification
11、and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 18 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device
12、classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97512 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FO
13、RM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Voltage between +VSand -VS. +40 V Differential input voltage (VIND) . 12 V Voltage at either input terminal . +VSto -VSPeak output current Short circuit protected Junction temperature (TJ) . +175C Storage temperature range. -65C to +150C Lead temperatu
14、re (soldering, 10 seconds) . +300C Thermal resistance, junction-to-case (JC) 21C/W Thermal resistance, junction-to-ambient (JA). 83C/W 1.4 Recommended operating conditions. Supply voltage range (VS). 15 V Common mode input voltage 1/2 (+VS- -VS) Load resistance (RL). 2 k Ambient operating temperatur
15、e range (TA). -55C to +125C 1.5 Radiation features. Neutron (20 ns pulse) 3/ Maximum total dose available (dose rate = 50 300 rads(si)/s) 300 Krads (Si) 4/ Latch-up 5/ . None 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and h
16、andbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMEN
17、T OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these docume
18、nts are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Ex
19、tended operation at the maximum levels may degrade performance and affect reliability. 2/ Guaranteed by process design, but not tested, unless specified in table I herein. 3/ Values to be specified when testing is required by a customer 4/ These parts may be dose rate sensitive in a space environmen
20、t and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 5/ Guaranteed by process or design, not tested. Provided by IHSNot for ResaleNo reproduction or network
21、ing permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97512 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references c
22、ited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordan
23、ce with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-
24、PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see Appendix A in this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specif
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLASMD596297512REVD2005MICROCIRCUITLINEARRADIATIONHARDENEDDUALWIDEBANDHIGHINPUTIMPEDANCEUNCOMPENSATEDOPERATIONALAMPLIFIERMONOLITHICSILICON

链接地址:http://www.mydoc123.com/p-701177.html