DLA SMD-5962-97512 REV D-2005 MICROCIRCUIT LINEAR RADIATION HARDENED DUAL WIDEBAND HIGH INPUT IMPEDANCE UNCOMPENSATED OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射双多种频率的高输入阻抗未补偿运算放大.pdf

《DLA SMD-5962-97512 REV D-2005 MICROCIRCUIT LINEAR RADIATION HARDENED DUAL WIDEBAND HIGH INPUT IMPEDANCE UNCOMPENSATED OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射双多种频率的高输入阻抗未补偿运算放大.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-97512 REV D-2005 MICROCIRCUIT LINEAR RADIATION HARDENED DUAL WIDEBAND HIGH INPUT IMPEDANCE UNCOMPENSATED OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射双多种频率的高输入阻抗未补偿运算放大.pdf（23页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to VIO, IIB, IIO, AVOL, CMRR, IOUT, ICC, CLSG, SR, tR, tF, and OS tests as specified under TABLE I. Also make changes to FIGURE 4. ro 97-09-12 R. MONNIN B Add 3.1.1 and APPENDIX A. -ro 98-12-17 R. MONNIN C Drawing updated to reflect

2、current requirements. -gt 03-01-16 R. MONNIN D Add enhanced low dose rate effects (ELDRS) paragraph to 1.5 and table I. -rrp 05-10-14 R. MONNIN REV SHET REV D D D D D D D D SHEET 15 16 17 18 19 20 21 22 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC

3、N/A PREPARED BY RICK C. OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH R. PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, RADIATION HARDENED, DUAL W

4、IDEBAND, HIGH INPUT IMPEDANCE UNCOMPENSATED OPERATIONAL AMPLIFIER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 97-03-20 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-97512 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E499-05 Provided by IHSNot for ResaleNo

5、reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97512 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels cons

6、isting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the

7、PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 97512 01 V X X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device class

8、es Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA d

9、evice. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-22620 Radiation hardened, S.O.I. dual wideband, high input impedance, uncompensated operational amplifier 1.2.3 Device class designator. The device class design

10、ator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification

11、and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 18 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device

12、classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97512 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FO

13、RM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Voltage between +VSand -VS. +40 V Differential input voltage (VIND) . 12 V Voltage at either input terminal . +VSto -VSPeak output current Short circuit protected Junction temperature (TJ) . +175C Storage temperature range. -65C to +150C Lead temperatu

14、re (soldering, 10 seconds) . +300C Thermal resistance, junction-to-case (JC) 21C/W Thermal resistance, junction-to-ambient (JA). 83C/W 1.4 Recommended operating conditions. Supply voltage range (VS). 15 V Common mode input voltage 1/2 (+VS- -VS) Load resistance (RL). 2 k Ambient operating temperatur

15、e range (TA). -55C to +125C 1.5 Radiation features. Neutron (20 ns pulse) 3/ Maximum total dose available (dose rate = 50 300 rads(si)/s) 300 Krads (Si) 4/ Latch-up 5/ . None 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and h

16、andbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMEN

17、T OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these docume

18、nts are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Ex

19、tended operation at the maximum levels may degrade performance and affect reliability. 2/ Guaranteed by process design, but not tested, unless specified in table I herein. 3/ Values to be specified when testing is required by a customer 4/ These parts may be dose rate sensitive in a space environmen

20、t and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 5/ Guaranteed by process or design, not tested. Provided by IHSNot for ResaleNo reproduction or network

21、ing permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97512 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references c

22、ited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordan

23、ce with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-

24、PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see Appendix A in this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specif

25、ied in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3

26、.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified in table III. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are

27、as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be m

28、arked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this optio

29、n, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be

30、 a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supp

31、ly to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listi

32、ng as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certifica

33、te of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of chang

34、e of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and

35、applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Pro

36、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97512 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test

37、 Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxInput offset voltage VIOVCM= 0 V 1, 2, 3 01 -6 6 mV M, D, P, L, R, F 1 -6 6 Input bias current +IIBVCM= 0 V, +RS= 100 k, -RS= 100 1 01 -50 50 nA 2, 3 -175 175 M, D, P, L, R, F 1 -400

38、 400 -IIBVCM= 0 V, +RS= 100 , -RS= 100 k 1 -50 50 2, 3 -175 175 M, D, P, L, R, F -400 400 Input offset current IIO VCM= 0 V, +RS= 100 k, -RS= 100 k 1 01 -75 75 nA 2, 3 -200 200 M, D, P, L, R, F 1 -300 300 Large signal voltage gain +AVOLVOUT0 V and +10 V, RL= 2 k 4 01 80 kV/V 5, 6 60 M, D, P, L, R, F

39、 4 40 -AVOLVOUT0 V and -10 V, RL= 2 k 4 80 5, 6 60 M, D, P, L, R, F 4 40 Common mode rejection ratio CMRR +VS= +5V, +25 V -VS= -25 V, -5 V 1 01 80 dB 2, 3 74 M, D, P, L, R, F 1 74 Output voltage swing +VOUTRL= 2 k 4, 5, 6 01 10 V -VOUT-10 Output current +IOUTVOUT= -10 V 4 01 15 mA 5, 6 10 M, D, P, L

40、, R, F 4 10 -IOUTVOUT= +10 V 4 -15 5, 6 -10 M, D, P, L, R, F 4 -10 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97512 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990

41、 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxQuiescent power supply current +ICCIOUT= 0 mA 1 01 6 mA 2, 3 8 M, D, P

42、, L, R, F 1 8 -ICCIOUT= 0 mA 4/ 1 01 12 mA 2, 3 16 M, D, P, L, R, F 1 16 Power supply rejection ratio +PSRR 1 01 80 dB VS= 5 V, +VS= +10 V, -VS= -15 V, +VS= +20 V, -VS= -15 V 2, 3 75 -PSRR 1 80 VS= 5 V, +VS= +15 V, -VS= -10 V, +VS= +15 V, -VS= -20 V 2, 3 75 Differential input 5/ resistance RINVCM= 0

43、 V, RL= 2 k, CL= 50 pF, TA= +25C 4 01 65 M Full power 5/ 6/ bandwidth FPBW VPEAK= 10 V, RL= 2 k, CL= 50 pF, TA= +25C 4 01 400 kHz Minimum closed 5/ loop stable gain CLSG RL= 2 k, CL= 50 pF 4, 5, 6 01 10 V/V Output short circuit 5/ current +ISC1 01 50 mA 2 45 VOUT= 1 V, RL= 10 , CL= 50 pF 3 60 -ISC1

44、-50 2 -45 VOUT= -1 V, RL= 10 , CL= 50 pF 3 -60 Output resistance 5/ ROUTRL= 10 , CL= 50 pF, Open loop, TA= +25C 4 01 30 Quiescent power 5/ 7/ consumption per op amp PC VOUT= 0 V, IOUT= 0 mA 1, 2, 3 01 240 mW See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking pe

45、rmitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97512 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unles

46、s otherwise specified Group A subgroups Device type Limits Unit Min Max Slew rate 8/ +SR VOUT= -5 V to +5 V, RL= 2 k, CL= 50 pF, RS= 50 , AVCL= +10 V/V 9, 10 01 20 V/s 11 15 M, D, P, L, R, F 9 15 -SR VOUT= +5 V to -5 V, RL= 2 k, CL= 50 pF, RS= 50 , AVCL= +10 V/V 9, 10 +SR 20 11 15 M, D, P, L, R, F 9

47、 15 Rise and fall time 8/ tRVOUT= 0 mV to +400 mV, RL= 2 k, CL= 50 pF, RS= 50 , AVCL= +10 V/V measured at 20% and 80% points 9 01 150 ns 10, 11 200 M, D, P, L, R, F 9 200 tFVOUT= 0 mV to -400 mV, RL= 2 k, CL= 50 pF, RS= 50 , AVCL= +10 V/V measured at 20% and 80% points 9 150 10, 11 200 M, D, P, L, R

48、, F 9 200 Overshoot 8/ +OS VOUT= 0 mV to +400 mV, RL= 2 k, CL= 50 pF, RS= 50 , AVCL= +10 V/V 9, 10, 11 01 70 % -OS VOUT= 0 mV to -400 mV, RL= 2 k, CL= 50 pF, RS= 50 , AVCL= +10 V/V 70 1/ Unless otherwise specified, VS= 15 V, source resistance (RS) = 100 , RL= 500 k, and VOUT= 0 V. 2/ Devices supplied to this drawing meet all levels M, D, P, L, R, and F of irradiation, however, this device is only tested at the F