DLA SMD-5962-97517 REV A-2009 MICROCIRCUIT MEMORY DIGITAL CMOS RADIATION- HARDENED 32K x 8-BIT MASK PROGRAMMABLE ROM MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to current requirements. Editorial changes throughout. tcr 09-10-01 Charles F. Saffle REV SHET REV A A A A A A A SHEET 15 16 17 18 19 20 21 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14

2、 PMIC N/A PREPARED BY Gary L. Gross DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling COLUMBUS, OHIO 43218 - 3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-

3、HARDENED, 32K x 8-BIT MASK PROGRAMMABLE ROM, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 97-05-30 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-97517 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E335-09 Provided by IHSNot for ResaleNo reproduction or networ

4、king permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97517 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliabi

5、lity (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN

6、is as shown in the following example: 5962 H 97517 01 Q X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked d

7、evices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device typ

8、e(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function Input buffer type Access time 01 6656 32K X 8-bit radiation hardened mask PROM CMOS 40 ns 02 6656 32K X 8-bit radiation hardened mask PROM TTL 40 ns 1.2.3 Device class designator. The devic

9、e class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V

10、Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDIP2-T28 28 Dual-in-line package Y See figure 1 28 Flat package Z See figure 1 36 Flat packag

11、e 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97517 DEFENSE

12、SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VDD) -0.5 V dc to +7.0 V dc Voltage on any pin with respect to ground . -0.5 V dc to VDD+0.5 V dc DC output current (IOUT) . 25 mA Maximum power diss

13、ipation (PD) . 2.5 W Lead temperature (soldering, 10 seconds maximum) +270C Thermal resistance, junction-to-case (JC): Case X . See MIL-STD-1835 Case Y and Z 2.0C/W Junction temperature (TJ). +175C Storage temperature range -65C to +150C Data retention 10 years (minimum) 1.4 Recommended operating co

14、nditions. Supply voltage (VDD) +4.5 V dc to +5.5 V dc Ground voltage (VSS) . 0.0 V dc Case operating temperature range (TC) . -55C to +125C Radiation features: Total dose irradiation 1 x 106Rads(Si) Single event phenomenon (SEP) effective linear energy threshold (LET) with no upsets . 120 MEV-cm2/mg

15、 Neutron irradiation 1 x 1014neutrons/cm22/ 1.5 Digital logic testing for device classes Q and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, method 5012) as specified in the altered item drawing (AID) 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and han

16、dbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits

17、, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - St

18、andard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent

19、damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Guaranteed, but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97517 DEFENSE SUPP

20、LY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents ci

21、ted in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM In

22、ternational, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS INDUSTRIES ALLIANCE (EIA) JEDEC Standard JESD 78 - IC Latch-Up Test. (Copies of this document are available online at; http:/www.jedec.org or from the Electronics Industries Alliance,

23、2500 Wilson Boulevard, Suite 310, Arlington, VA 22201-3834). (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Or

24、der of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1

25、Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as des

26、cribed herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specifi

27、ed in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.

28、3.2.3 Truth table. The truth table for unprogrammed devices shall be as specified on figure 3. 3.2.4 AC test circuit and timing characteristics. The ac test circuit and timing characteristics shall be as specified on figure 4. 3.2.5 Read cycle waveforms. The read cycle waveforms shall be as specifie

29、d on figure 5. 3.3.6 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 6. 3.2.7 Pin function descripton. See 6.5. 3.2.8 Data retention. A data retention stress test shall be completed as part of the vendors reliability monitors. This test shall be done for in

30、itial characterization and after any design or process changes which may affect data retention. The methods and procedures may be vendor specific but shall guarantee data retention as specified in paragraph 1.3 over the full military temperature range. The vendors procedure shall be kept under docum

31、ent control and shall be made available upon request of the aquiring or preparing activity, along with test data. 3.3 AID requirements. All AIDs written against this SMD shall be sent to DSCC-VAS. The following items shall be provided to the device manufacturer by the customer as part of an AID. The

32、se items form a part of the manufacturers design database/database archive and shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon

33、request. As such, these items will not appear in the AID in the traditional sense. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-97517 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL

34、 A SHEET 5 DSCC FORM 2234 APR 97 3.3.1 ROM mask definition. To generate a mask for a ROM code, an ASCII file shall be submitted. The format for the code shall be as follows: a. Two fields, address followed by data in hexadecimal code, most significant bit to least significant bit (AH is most signifi

35、cant bit). b. Addresses need not be in order. c. Address and data fields must be separated by at least one space or a slash “/“. d. A semicolon “;“ may terminate the line, but is not required. e. No “end-of-file“ characters are required. f. Comments are preceded by the pound sign “#“. g. Comments ma

36、y be on the same line AFTER address and data fields. h. Unused locations do not need to be addressed, but MUST be specified as all zeroes or all ones. This can be done as a comment. 3.3.2 Fault coverage measurement of manufacturing logic tests. 3.3.3 Burn-in circuit. 3.3.4 Radiation exposure circuit

37、. 3.3.5 Maximum device cross section for SEP. 3.3.6 Programmed devices. The truth table for final masked (programmed) devices shall as specified in the altered item drawing. 3.4 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electr

38、ical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.5 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for

39、 each subgroup are defined in table I. 3.6 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of

40、not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.6.1 Certification/comp

41、liance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.7 Certificate of compliance. For device classes Q and V, a certificate of compliance

42、shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 her

43、ein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38

44、535, appendix A and herein. 3.8 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.9 Notification of change f

45、or device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAN

46、DARD MICROCIRCUIT DRAWING SIZE A 5962-97517 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C 4.5 V VDD 5.5 V unless otherwise specified Group A subgroups Devic

47、e type Limits Unit Min Max Output low voltage VOL1VDD= 4.5 V, IOL= 10 mA 1, 2, 3 All 0.4 V M,D,P,L,R,F,G,H 1 1/ 2/ Output low voltage VOL2VDD= 4.5 V, IOL= 200A 1, 2, 3 All 0.05 V M,D,P,L,R,F,G,H 1 1/ 2/ Output high voltage VOH1VDD= 4.5 V, IOH= -200A 1, 2, 3 All VDD- 0.05 V M,D,P,L,R,F,G,H 1 1/ 2/ VO

48、H2IOH= -5.0mA 1, 2, 3 All 4.2 M,D,P,L,R,F,G,H 1 1/ 2/ Input low voltage CMOS inputs VIL1VDD= 4.5 V 1, 2, 3 01 0.3 x VDDV M,D,P,L,R,F,G,H 1 1/ 2/ Input low voltage TTL inputs VIL2VDD= 4.5 V 1, 2, 3 02 0.8 V M,D,P,L,R,F,G,H 1 1/ 2/ High-level input voltage CMOS inputs VIH1VDD= 5.5 V 1, 2, 3 01 0.7 x VDDV M,D,P,L,R,F,G,H 1 1/ 2/ High-level input voltage TTL inputs VIH2VDD= 5.5 V 1, 2, 3 02 2.2 V M,D,P,L,R,F,G,H 1 1/ 2/ Input leakage current