DLA SMD-5962-96868 REV A-2008 MICROCIRCUIT DIGITAL ADVANCED HIGHSPEED CMOS QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《高级双极数字单硅片微电路 由高速互补金属氧化物半导体结构组成 带三态输.pdf

《DLA SMD-5962-96868 REV A-2008 MICROCIRCUIT DIGITAL ADVANCED HIGHSPEED CMOS QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《高级双极数字单硅片微电路 由高速互补金属氧化物半导体结构组成 带三态输.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96868 REV A-2008 MICROCIRCUIT DIGITAL ADVANCED HIGHSPEED CMOS QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS MONOLITHIC SILICON《高级双极数字单硅片微电路 由高速互补金属氧化物半导体结构组成 带三态输.pdf（18页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update the boilerplate to current requirements as specified in MIL-PRF-38535. - jak 08-06-25 Thomas M. Hess REV SHET REV A A A SHEET 15 16 17 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PRE

2、PARED BY Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING CHECKED BY Monica L. Poelking DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING A

3、PPROVAL DATE 96-10-14 MICROCIRCUIT, DIGITAL, ADVANCED HIGH-SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-96868 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E409-08 Provided by IHSNot for ResaleNo reproduction or n

4、etworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96868 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high re

5、liability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The

6、PIN is as shown in the following example: 5962 - 96868 01 Q C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA mar

7、ked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Devic

8、e type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AHC125 Quadruple bus buffer gate with three-state outputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as

9、follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case

10、outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in

11、MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96868 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISIO

12、N LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) . -0.5 V dc to +7.0 V dc DC input voltage range (VIN) . -0.5 V dc to +7.0 V dc 4/ DC output voltage range (VOUT) -0.5 V dc to VCC+ 0.5 V dc 4/ DC input clamp current (IIK) (VINVCC) . 20 mA Conti

13、nuous output current (IO) (VOUT= 0 V to VCC) . 25 mA Continuous current through VCCor GND 50 mA Storage temperature range (TSTG) -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) . +175C Maximum power d

14、issipation (PD) 500 mW 1.4 Recommended operating conditions. 2/ 3/ 5/ Supply voltage range (VCC) . +2.0 V dc to +5.5 V dc Input voltage range (VIN) . +0.0 V dc to +5.5 V dc Output voltage range (VOUT) +0.0 V to VCCMinimum high level input voltage (VIH): VCC= 2.0 V . 1.5 V VCC= 3.0 V . 2.1 V VCC= 5.0

15、 V 0.5 V . 3.85 V Maximum low level input voltage (VIL): VCC= 2.0 V . 0.5 V VCC= 3.0 V . 0.9 V VCC= 5.0 V 0.5 V . 1.65 V Maximum high level output current (IOH): VCC= 2.0 V . -50 A VCC= 3.3 V 0.3 V . -4 mA VCC= 5.0 V 0.5 V . -8 mA Maximum low level output current (IOL): VCC= 2.0 V . +50 A VCC= 3.3 V

16、 0.3 V . +4 mA VCC= 5.0 V 0.5 V . +8 mA Minimum input rise or fall rate (t/V): VCC= 3.3 V 0.3 V 100 ns/V VCC= 5.0 V 0.5 V 20 ns/V Case operating temperature range (TC) -55C to +125C 1/ Stresses above the absolute maximum rating may cause permanent damage to the device, Extended operation at the maxi

17、mum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ The input and output voltage rating

18、s may be exceeded providing that the input and output current ratings are observed. 5/ Unused inputs must be held high or low to prevent them from floating. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-968

19、68 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein.

20、 Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircu

21、its. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ o

22、r from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, ho

23、wever, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufactu

24、rers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2

25、 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance wit

26、h 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Ground bounce waveforms and test circuit. The

27、ground bounce waveforms and test circuit shall be as specified on figure 4. 3.2.6 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 5. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDA

28、RD MICROCIRCUIT DRAWING SIZE A 5962-96868 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteris

29、tics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in

30、 table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on th

31、e device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certificatio

32、n mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-

33、38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of comp

34、liance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3

35、.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device

36、 class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option

37、 to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group numb

38、er 37 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96868 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. El

39、ectrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ -55C TC +125C +2.0 VCC +5.5 V unless otherwise specified VCCGroup A subgroups Limits 3/ Unit Min Max2.0 V 1.9 3.0 V 2.9 IOH= -50 A 4.5 V 1, 2, 3 4.4 1 2.58 IOH= -4 mA 3.0 V 2, 3 2.48 1 3.94 High level

40、 output voltage 3006 VOHFor all inputs affecting outputs under test, VIN= VIHor VILFor all other inputs, VIN= VCCor GND IOH= -8 mA 4.5 V 2, 3 3.8 V 2.0 V 0.10 3.0 V 0.10 IOH= 50 A 4.5 V 1, 2, 3 0.10 1 0.36 IOH= 4 mA 3.0 V 2, 3 0.50 1 0.36 Low level output voltage 3007 VOLFor all inputs affecting out

41、puts under test, VIN= VIHor VILFor all other inputs, VIN= VCCor GND IOH= 8 mA 4.5 V 2, 3 0.50 V 1 +0.1 Input current high 3010 IIHFor input under test, VIN= VCCFor all other inputs, VIN= VCCor GND 5.5 V 2, 3 +1.0 A 1 -0.1 Input current low 3009 IILFor input under test, VIN= GND For all other inputs,

42、 VIN= VCCor GND 5.5 V 2, 3 -1.0 A 1 +0.25 Three-state output leakage current, high 3021 IOZHmOE = VIHFor all other inputs, VIN= VCCor GND VOUT= VCC5.5 V 2, 3 +2.5 A 1 -0.25 Three-state output leakage current, low 3020 IOZLmOE = VIHFor all other inputs, VIN= VCCor GND VOUT= GND 5.5 V 2, 3 -2.5 A 1 4.

43、0 Quiescent supply current, 3005 ICCFor all inputs, VIN= VCCor GND IOUT= 0 A 5.5 V 2, 3 40.0 A Input capacitance 3012 CINTC= +25C VIN= VCCor GND See 4.4.1c 5.0 V 4 10.0 pF Power dissipation capacitance CPD4/ CL= 50 pF minimum f = 1 MHz see figure 4 5.0 V 4 14.0 pF VOLP5/ 5.0 V 4 1100 Low level groun

44、d bounce noise VOLV5/ 5.0 V 4 -1100 mV VOHP5/ 5.0 V 4 500 High level VCCbounce noise VOHV5/ VIN= VCC or= 0.0 V TA= +25C See 4.4.1d See figure 4 5.0 V 4 -750 mV See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MI

45、CROCIRCUIT DRAWING SIZE A 5962-96868 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ -55C TC +125C +2.0 VCC +5.5 V unless o

46、therwise specified VCCGroup A subgroups Limits 3/ Unit Min Max2.0 V 3.0 V Functional tests 3014 6/ VIN= VIHor VILVerify output VOSee 4.4.1b 5.5 V 7, 8 L H 9 8.0 3.0 V and 3.6 V 10, 11 1.0 9.5 9 5.5 CL= 15 pF minimum See figure 5 8/ 4.5 V and 5.5 V 10, 11 1.0 6.5 ns 9 11.5 3.0 V and 3.6 V 10, 11 1.0

47、13.0 9 7.5 tPLH, 7/ CL= 50 pF minimum See figure 5 4.5 V and 5.5 V 10, 11 1.0 8.5 ns 9 8.0 3.0 V and 3.6 V 10, 11 1.0 9.5 9 5.5 CL= 15 pF minimum See figure 5 8/ 4.5 V and 5.5 V 10, 11 1.0 6.5 ns 9 11.5 3.0 V and 3.6 V 10, 11 1.0 13.0 9 7.5 Propagation delay time, mA to mY 3003 tPHL7/ CL= 50 pF mini

48、mum See figure 5 4.5 V and 5.5 V 10, 11 1.0 8.5 ns See footnotes on next sheet. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-96868 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ -55C TC +125C +2.0 VCC +5.5 V unless otherw