DLA SMD-5962-95829 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS HEX BUFFER CONVERTER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体六角缓冲器或转换器硅单片电路线型微电路》.pdf

《DLA SMD-5962-95829 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS HEX BUFFER CONVERTER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体六角缓冲器或转换器硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95829 REV B-1997 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS HEX BUFFER CONVERTER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体六角缓冲器或转换器硅单片电路线型微电路》.pdf（27页珍藏版）》请在麦多课文档分享上搜索。

1、NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)97-07-24Form ApprovedOMB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewinginstructions, searching exi

2、sting data sources, gathering and maintaining the data needed, and completing and reviewing thecollection of information. Send comments regarding this burden estimate or any other aspect of this collection of information,including suggestions for reducing this burden, to Department of Defense, Washi

3、ngton Headquarters Services, Directorate forInformation Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office ofManagement and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURNYOUR COMPLETED FORM TO EITH

4、ER OF THESE ADDRESSES. RETURN COMPLETED FORM TO THE GOVERNMENTISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITY NUMBER LISTED IN ITEM 2 OF THISFORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center Columbus5. CAGE CODE672686.

5、 NOR NO.5962-R378-97a. TYPED NAME (First, Middle Initial,Last)3990 East Broad StreetColumbus, OH 43216-50007. CAGE CODE672688. DOCUMENT NO.5962-958299. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HEXBUFFER/CONVERTER, MONOLITHIC SILICON10. REVISION LETTER11. ECP NO.No users list

6、ed.a. CURRENTAb. NEWB12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1: Revisions ltr column; add “B“.Revisions description column; add “Changes in accordance with NOR 5962-R378-97“.Revisions date column; add “97-07-24“.Revision level block; add “B“.Rev sta

7、tus of sheets; for sheets 22 change from “A“ to “B”.Rev status of sheets; for sheets 23 change from “A“ to “B”.Sheet 22: NOR 5962-R210-97 sheet 7 of Appendix A for Die Physical Dimensions for Die Thickness change from “21 +/-1 mils” to “20 +/1 mils”Revision Level Block: change from “A” to “B”Sheet 2

8、3: NOR 5962-R210-97 sheet 8 of Appendix A for Interface Materials for Glassivation Type change from “Phosphorous doped SIO2” to “PSG “ and for Assembly Related Information for Substrate Potential change from “ Tied to VSS” to “Floating or Tied to VDD “Revision Level Block: change from “A” to “B” 14.

9、 THIS SECTION FOR GOVERNMENT USE ONLYa. (X one)X (1) Existing document supplemented by the NOR may be used in manufacture.(2) Revised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision and furnish revised document.b. A

10、CTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENTDSCC-VAc. TYPED NAME (First, Middle Initial, Last)d. TITLEChief, Custom Microelectronicse. SIGNATURERAYMOND MONNINf. DATE SIGNED(YYMMDD)97-07-2415a. ACTIVITY ACCOMPLISHING REVISIONDSCC-VAb. REVISION COMPLETED (Signature)RONALD COUCHc. DATE SIGNED(YY

11、MMDD)97- 07-24 DD Form 1695, APR 92 Previous editions are obsolete.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-NOTICE OF REVISION (NOR)THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED.1. DATE(YYMMDD)97-03-14Form ApprovedO

12、MB No. 0704-0188Public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewing instructions, searching existing data sources,gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comment

13、s regarding this burden estimate or any otheraspect of this collection of information, including suggestions for reducing this burden, to Department of Defense, Washingtion Headquarters Services, Directoratefor Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington,

14、VA 22202-4302, and to the Office of Management and Budget,Paperwork Reduction Project (0704-0188), Washington, DC 20503.PLEASE DO NOT RETURN YOUR COMPLETED FORM TO EITHER OF THESE ADDRESSED. RETURN COMPLETED FORM TO THE GOVERNMENT ISSUINGCONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITY NUMBE

15、R LISTED IN ITEM 2 OF THIS FORM.2. PROCURINGACTIVITY NO.3. DODAAC4. ORIGINATORb. ADDRESS (Street, City, State, Zip Code)Defense Supply Center, Columbus3990 East Broad StreetColumbus, OH 43216-50005. CAGE CODE672686. NOR NO.5962-R210-97a. TYPED NAME (First, Middle Initial,Last)7. CAGE CODE672688. DOC

16、UMENT NO.5962-958299. TITLE OF DOCUMENTMICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HEXBUFFER/CONVERTER, MONOLITHIC SILICON 10. REVISION LETTER11. ECP NO.No users listeda. CURRENT b. NEWA12. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIESAll13. DESCRIPTION OF REVISIONSheet 1: Revisions ltr c

17、olumn; add “A“.Revisions description column; add “Changes in accordance with NOR 5962-R210-97“.Revisions date column; add “97-03-14“.Revision level block; add “A“.Rev status of sheets; for sheets 1, 4, and 17 through 23, add “A“.Sheet 4: Add new paragraph which states; “3.1.1 Microcircuit die. For t

18、he requirements for microcircuit die, see appendix A to this document.“Revision level block; add “A“.Sheet 17 through 23: Add attached appendix A.CONTINUED ON NEXT SHEET14. THIS SECTION FOR GOVERNMENT USE ONLYa. (X one)X (1) Existing document supplemented by the NOR may be used in manufacture.(2) Re

19、vised document must be received before manufacturer may incorporate this change.(3) Custodian of master document shall make above revision and furnish revised document.b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENTDSCC-VACc. TYPED NAME (First, Middle Initial, Last)MONICA L. POELKINGd. TITLE

20、CHIEF, CUSTOM MICROELECTRONICS TEAMe. SIGNATUREMONICA L. POELKINGf. DATE SIGNED(YYMMDD)97-03-1415a. ACTIVITY ACCOMPLISHING REVISIONDSCC-VACb. REVISION COMPLETED (Signature)TIN H. LEc. DATE SIGNED(YYMMDD)97-03-14DD Form 1695, APR 92 Previous editions are obsolete.Provided by IHSNot for ResaleNo repro

21、duction or networking permitted without license from IHS-,-,-STANDARDMILITARY DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSDAYTON, OHIO 43216-5000SIZEA5962-95829REVISION LEVELASHEET17DESC FORM 193AJUL 94APPENDIX AAPPENDIX A FORMS A PART OF SMD 5962-95829Document No: 5962-95829Revision: ANOR No: 5962-R210-9

22、7Sheet: 2 of 810. SCOPE10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified ManufacturersList (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QM planfor use in monolithic microc

23、ircuits, multichip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designsin accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability(device class Q) and space application (device Class V) are reflected in t

24、he Part or Identification Number (PIN). When available achoice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.10.2 PIN. The PIN shall be as shown in the following example:5969 R 95829 01 V 9 A | |Federal RHA Device Device Die DieStock class designator type class code Detailsd

25、esignator (see 10.2.1) (see 10.2.2) designator (see 10.2.4)_ _/ (see 10.2.3) /Drawing Number10.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. Adash (-) indicates a non-RHA die.10.2.2 Device type(s). The device type(s) shall identify t

26、he circuit function as follows:Device type Generic number Circuit function01 4010B Radiation Hardened, CMOS, hex buffer/converter.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMILITARY DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSDAYTON, OHIO 4321

27、6-5000SIZEA5962-95829REVISION LEVELASHEET18DESC FORM 193AJUL 94APPENDIX AAPPENDIX A FORMS A PART OF SMD 5962-95829Document No: 5962-95829Revision: ANOR No: 5962-R210-97Sheet: 3 of 810.2.3 Device class designator.Device class Device requirements documentationQ or V Certification and qualification to

28、the die requirements of MIL-PRF-38535.10.2.4 Die Details. The die details designation shall be a unique letter which designates the dies physical dimensions, bondingpad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product andva

29、riant supplied to this appendix.10.2.4.1 Die Physical dimensions.Die Types Figure number01 A-110.2.4.2 Die Bonding pad locations and Electrical functions.Die Types Figure number01 A-110.2.4.3 Interface Materials.Die Types Figure number01 A-110.2.4.4 Assembly related information.01 A-110.3 Absolute m

30、aximum ratings. See paragraph 1.3 within the body of this drawing for details.10.4 Recommended operating conditions. See paragraph 1.4 within the body of this drawing for details.20. APPLICABLE DOCUMENTS20.1 Government specifications, standards, bulletin, and handbooks. Unless otherwise specified, t

31、he following specifications,standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications andStandards specified in the solicitation, form a part of this drawing to the extent specified herein.Provided by IHSNot for ResaleNo reproduction or

32、networking permitted without license from IHS-,-,-STANDARDMILITARY DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSDAYTON, OHIO 43216-5000SIZEA5962-95829REVISION LEVELASHEET19DESC FORM 193AJUL 94APPENDIX AAPPENDIX A FORMS A PART OF SMD 5962-95829Document No: 5962-95829Revision: ANOR No: 5962-R210-97Sheet: 2 o

33、f 8SPECIFICATIONMILITARYMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSMIL-STD-883 - Test Methods and Procedures for Microelectronics.HANDBOOKMILITARYMIL-HDBK-103 - List of Standardized Military Drawings (SMDs).(Copies of the specification, standards, bulletin

34、, and handbook required by manufacturers in connection with specific acquisitionfunctions should be obtained from the contracting activity or as directed by the contracting activity).20.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein

35、, the text ofthis drawing shall take precedence.30. REQUIREMENTS30.1 Item Requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodificati

36、on in the QM plan shall not effect the form, fit or function as described herein.30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specified inMIL-PRF-38535 and the manufacturers QM plan, for device classes Q and V and herein.30.2.1 Die P

37、hysical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1.30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be asspecified in 10.2.4.2 and on figure A-1.30.2.3 Interface materials. The int

38、erface materials for the die shall be as specified in 10.2.4.3 and on figure A-1.30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-ST

39、ANDARDMILITARY DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSDAYTON, OHIO 43216-5000SIZEA5962-95829REVISION LEVELASHEET20DESC FORM 193AJUL 94APPENDIX AAPPENDIX A FORMS A PART OF SMD 5962-95829Document No: 5962-95829Revision: ANOR No: 5962-R210-97Sheet: 2 of 830.2.5 Radiation exposure circuit. The radiation

40、exposure circuit shall be as defined within paragraph 3.2.5 of the body of thisdocument.30.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electricalperformance characteristics and post-irradiation parameter limits are as specifi

41、ed in table I of the body of this document.30.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient tomake the packaged die capable of meeting the electrical performance requirements in table I.30.5 Marking. As a minimum, each un

42、ique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer,shall be identified with the wafer lot number, the certification mark, the manufacturers identification and the PIN listed in 10.2 herein. The certification mark shall be a G22QM” or G22Q” as required by MIL-

43、PRF-38535.30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate ofcompliance submitted to DSCC-VA prior to listing as a

44、n approved source of supply for this appendix shall affirm that themanufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38

45、535 shallbe provided with each lot of microcircuit die delivered to this drawing.40. QUALITY ASSURANCE PROVISIONS40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordancewith MIL-PRF-38535 or as modified in the device manufacturers Qualit

46、y Management (QM) plan. The modifications in the QM planshall not effect the form, fit or function as described herein.40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in themanufacturers QM plan. As a minimum it shall consist of:a) Wafe

47、r Lot acceptance for Class V product using the criteria defined within MIL-STD-883 TM 5007.b) 100% wafer probe (see paragraph 30.4).c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010 or the alternate procedures allowed within MIL-STD-883 TM50

48、04.40.3 Conformance inspection.40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see 30.5herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packageddie shall be

49、as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1, 4.4.4.1.1,4.4.4.2, 4.4.4.3, and 4.4.4.4.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMILITARY DRAWINGDEFENSE SUPPLY CENTER, COLUMBUSDAYTON, OHIO 43216