DLA SMD-5962-95811 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS 4-BIT FULL ADDER WITH FAST CARRY MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体4-BIT全加速硅单片电路线型微电路》.pdf

《DLA SMD-5962-95811 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS 4-BIT FULL ADDER WITH FAST CARRY MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体4-BIT全加速硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95811 REV A-1998 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS 4-BIT FULL ADDER WITH FAST CARRY MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体4-BIT全加速硅单片电路线型微电路》.pdf（27页珍藏版）》请在麦多课文档分享上搜索。

1、= b 0323493 607 9. TITLE OF DOCUMENT FULL ADDER WITH FAST CARRY, MONOLITHIC SILICON MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 4-BIT NOTICE OF REVISION (NOR) 10. REVISION LETER THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. I. ACTIVITY AUTHORIZED TO APPRO

2、VE CHANGE FOR GOVERNMENT DSCC-VAC i. DATE (WMMDD) 98-07-31 c. TYPED NAME (first, Middle /nitial Last) MONICA L. POELKING Public reporting burden for.this collection is estimated to avera e 2 hours er response, including the time for, reviewing instructions searching existing data sources gathenng an

3、d main?ainin the add “A“. Revisions description column; add Changes in accordance with NOR 5962-R152-98“. Revisions date column; add “98-07-31 “. Revision level block; add “A. Rev status of sheets; for sheets 1,4, and 18 through 24, add “A“. this document.“ Revision level block: add “A“. Sheets 18 t

4、hrough 24: Add attached appendix A. Sheet 4: Add new paragraph which states; “3.1 .i Microcircuit die. For the requirements for microcircuit die, see appendix A to CONTINUED ON NEXT SHEETS 14. THIS SECTION FOR GOVERNMENT USE ONLY H (1) Existing document supplemented by the NOR may be used in manufac

5、ture. (2) Revised document must be received before manufacturer may incorporate this change. (3) Custodian of master document shall make above revision and furnish revised document. f. DATE SIGNED (WMMDD) 98-07-31 c. DATE SIGNED (YYMMDD) 98-07-31 DD Form 1695, APR 92 Previous editions are obsolete.

6、Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-b 0123494 543 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-9581 1 SIZE 5962-9581 1 A REVISION LEVEL SHEET A 18 D

7、ocument No: 5962-9581 1 Revision: A Sheet: 2 of 8 NOR NO: 5962-R152-98 10. SCOPE 10.1 ScoDe. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the

8、 manufacturers approved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device clas

9、s Q) and space application (device Class V) are reflected in the Part or Identification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. 10.2 m. The PIN shall be as shown in the following example: 59,62 ri 95811 t i Federal RHA Device Devi

10、ce Stock class designator type class designator (see 10.2.1) (see 10.2.2) designator (see I 0.2.3) 4 Die code I Die Details (see 10.2.4) Drawing Number 10.2.1 RHA desiQnator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA d

11、ie. 10.2.2 Device tvpels). The device type) shall identify the circuit function as follows: Device Wise Generic number Circuit function o1 HCS283 Radiation Hardened, SOS, high speed CMOS, 4-bit full adder with fast carry. 10.2.3 Device class desiQnator. Device class Device reauirements documentation

12、 QorV Certification and qualification to the die requirements of MIL-PRF-38535. DSCC FORM 2234 APR 97 - - Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-9999996 0323495 4BT m I l Die TvDes o1 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-9581 1 STA

13、NDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 Document No: 5962-9581 1 Revision: A Sheet: 3 of 8 NOR NO: 5962431 52-98 SIZE A 5962-9581 1 REVISION LEVEL SHEET A 19 10.2.4 Die Details. The die details designation shall be a unique letter which designates the die

14、s physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. 10.2.4.1 Die Phvsical dimensions. Fiaure number A- 1 10.2.4.2 Die Bondina Dad locations and Electric

15、al functions. Die TvDes o1 Fiaure number A-1 10.2.4.3 Interface Materials. Die TvDes Fiaure number I o1 A- 1 10.2.4.4 Assemblv related information. o1 A- 1 10.3 Absolute maximum ratinas. See paragraph 1.3 within the body of this drawing for details. 10.4 Recommended oDeratina conditions. See paragra

16、ph 1.4 within the body of this drawing for details. 20. APPLICABLE DOCUMENTS 1 20.1 Government SDecifications. standards. bulletin, and handbooks. Unless otherwise specified, the following specifications, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defens

17、e Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95

18、81 1 SIZE 5962-9581 1 I STANDARD A MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS REVISION LEVEL SHEET COLUMBUS, OHIO 43216-5000 A 20 Document No: 5962-9581 1 Revision: A Sheet: 4 of 8 NOR NO: 5962-Ri 52-98 SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing,

19、General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Methods and Procedures for Microelectronics. HANDBOOK DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standardized Military Drawings (SMDs). (Copies of the specification, standards, bulletin, and handbook required by manufact

20、urers in connection with specific 20.2 Order of Rrecedence. In the event of a conflict between the text of this drawing and the references cited herein, the acquisition functions should be obtained from the contracting activity or as directed by the contracting activity). text of this drawing shall

21、take precedence. 30. REQUIREMENTS 30.1 Item Reauirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not e

22、ffect the form, fit or function as described herein. specified in MIL-PRF-38535 and the manufacturers QM plan, for device classes Q and V and herein. 30.2 Desian. construction and Rhvsical dimensions. The design, construction and physical dimensions shall be as 30.2.1 Die Physical dimensions. The di

23、e physical dimensions shall be as specified in 10.2.4.1 and on figure A-1. 30.2.2 Die bondina Rad locations and electrical functions. The die bonding pad locations and electrical functions shall be 30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and

24、on figure A-1 . 30.2.4 Assemblv related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1 . 30.2.5 Truth table. The truth table shall be as defined within paragraph 3.2.3 of the body of this document. 30.2.6 Radiation exposure circuit. The radiation expos

25、ure circuit shall be as defined within paragraph 3.2.6 of the body of as specified in 10.2.4.2 and on figure A-1 . this document. DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-W 999999b 0323497 252 1 30.4 Electrical test reaui

26、rements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table I. 30.5 Markinq. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, fo

27、r shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturers identification and the PIN listed in 10.2 herein. The certification mark shall be a “QML” or “Q as required by MIL-PRF-38535. 30.6 Certification of compliance. For device classes Q and

28、V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the

29、manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. 30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered

30、to this drawing. 40. QUALITY ASSURANCE PROVISIONS APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-9581 1 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 Document No: 5962-9581 1 Revision: A Sheet: 5 of 8 NOR NO: 5962-R152-98 SIZE 5962-9581 1 A REVISION LEVEL SH

31、EET A 21 30.3 Electrical performance characteristics and wst-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document. 40.1 Samelina and inspection. For d

32、evice classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modifications in the QM plan shall not effect the form, fit or function as described herein. manufacturers QM plan. As

33、a minimum it shall consist of: 40.2 Screeninq. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the a) Wafer Lot acceptance for Class V product using the criteria defined within MIL-STD-883 TM 5007. b) 100% wafer probe (see paragraph 30.4). c) 100% i

34、nternal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM201 O or the alternate procedures allowed within MIL-STD-883 TM5004. APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-= 999999b 0323498 399 APPENDIX

35、A APPENDIX A FORMS A PART OF SMD 5962-9581 1 Document No: 5962-9581 1 Revision: A Sheet: 6 of 8 NOR NO: 5962-R152-98 60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone (61 4)-692-0674, I SIZE STANDARD MICROCIRCUIT DRAWING A DEFENSE SUPPLY

36、CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 60.3 Abbreviations, svmbols and definitions. The abbreviations, symbols, and definitions used herein are defined with MIL-PRF-38535 and MIL-HDBK-1331. I 5962-9581 1 REVISION LEVEL SHEET A 22 Provided by IHSNot for ResaleNo reproduction or networking permitt

37、ed without license from IHS-,-,-999999b 0323499 025 SIZE STANDARD MICROCIRCUIT DRAWING A DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-9581 1 5962-9581 1 REVISION LEVEL SHEET A 23 FIGURE A-1 I o DIE PHYSICAL DIMENSIONS Die Size: Die Thicknes

38、s: 21 84 x 221 O microns. 21 +/-2 mils. Document No: 5962-9581 1 Revision: A Sheet: 7 of 8 NOR NO: 5962-R152-98 o DIE BONDING PAD LOCATIONS AND ELECTRICAL FUNCTIONS The following metallization diagram supplies the locations and electrical functions of the bonding pads. The internal metallization lay

39、out and alphanumeric information contained within this diagram may or may not represent the actual circuit defined by this SMD. 8 5 - t s p. O 0 t a o u z o NOTE: Pad numbers reflect terminal numbers when placed in Case Outlines E, X (see Figure 1). Provided by IHSNot for ResaleNo reproduction or ne

40、tworking permitted without license from IHS-,-,- b 0323500 677 STAN DARD MICROCIRCUIT DRAWING COLUMBUS, OHIO 4321 6-5000 DEFENSE SUPPLY CENTER COLUMBUS APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-9581 1 SIZE 5962-9581 1 A REVISION LEVEL SHEET A 24 Document No: 5962-9581 1 Revision: A Sheet: 8 of

41、8 NOR NO: 596243152-98 I o INTERFACE MATERIALS Top Metallization: SiAl 11 .OkA +/- 1 kA Backside Metallization None Glassivation Type: si02 Thickness 13kA 4- 2.6kA Substrate: Silicon on Sapphire (SOS) o ASSEMBLY RELATED INFORMATION Substrate Potential: Insulator. Special assembly instructions: Bond

42、pad #I 6 (VCC) first. DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-M 9999996 0123501 503 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 98-07-31 Approved sources of supply for SMD 5962-9581 1 are listed below for immediate acqu

43、isition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to an

44、d accepted by DSCC-VA. This bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. Standard Vendor Vendor similar number PIN If HCS283HMSR - I! Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements o

45、f this drawing. Vendor CAGE number 34371 Vendor name and address Harris Semiconductor P.O. Box 883 Melbourne, FL 32902-0883 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin. Provi

46、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-REVISIONS LTR I DESCRIPTION DATE (YR-MO-DA) APPROVED REV STATUS I REV III OF SHEETS PMIC NIA PREPAREDBY I RickC. Officer CHECKED BY Thanh V. Nguyen STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR

47、 USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 95-11-15 AMSC NIA REVISION LEVEL DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CARRY, MONOLITHIC SILICON HIGH SPEED CMOS, 4-BIT FUL

48、L ADDER WITH FAST I CAiYii8 I 5962-95811 SIZE A SHEET 1 OF 17 )ESC FORM 193 JUL 94 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. 5962-E074-96 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-75811 m 7797776

49、 0081268 355 m STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 I 1. SCOPE 1.1 and the absolute value of the magnitude, not the sign, is relative to the minimum and maximm limits, as applicable, listed herein. Devices supplied to this drawing meet all levels M, D, L, and R of irradiation. tested at the l8RlS lev