DLA SMD-5962-94743 REV A-2004 MICROCIRCUIT LINEAR 16-BIT 100 KSPS ANALOG TO DIGITAL CONVERTER WITH PARALLEL INTERFACE MONOLITHIC SILICON《16-BIT 100 KSPS 类似体到数字平行接口转换器硅单片电路线型微电路》.pdf

《DLA SMD-5962-94743 REV A-2004 MICROCIRCUIT LINEAR 16-BIT 100 KSPS ANALOG TO DIGITAL CONVERTER WITH PARALLEL INTERFACE MONOLITHIC SILICON《16-BIT 100 KSPS 类似体到数字平行接口转换器硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-94743 REV A-2004 MICROCIRCUIT LINEAR 16-BIT 100 KSPS ANALOG TO DIGITAL CONVERTER WITH PARALLEL INTERFACE MONOLITHIC SILICON《16-BIT 100 KSPS 类似体到数字平行接口转换器硅单片电路线型微电路》.pdf（35页珍藏版）》请在麦多课文档分享上搜索。

1、SMD-5962-9Y734 M 9999996 0072476 282 M REVISIONS DESCRIPTION DATE (YR-HO-DA) APPROVED . LTR REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC NIA STAIPDARD MICROCIRCUIT DRAWIHG THIS DRAUING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE SC NIA DECC FORM 153 JU

2、L 94 REV III SHEET 123 PREPARED BY Jeff Bowling CHECKED BY Jeff Bowling APPROVED BY Michael A. Frye DRAWING APPROVAL DATE 95-04-03 REVISION LEVEL DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16MEG X 1 DRAM, MONOLITHIC SILICON SIZE /CAGE CODE A 67268 5962-

3、94734 SHEET 1 OF 34 5562-El 51 -95 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-74734 = 7999996 0072477 119 7 I Drawing number 1.2.1 RHA desiqnator. Device class M RHA marked devices shall meet the MIL-1-38535 appendix A specified RHA lev

4、els and shall be marked with the appropriate RHA designator. MIL-1-38535 specified RHA levels and shall be marked with the appropriate RHA designator. non-RHA device. Device classes Q and V RHA marked devices shall meet the A dash (-) indicates a I 1. SCOPE 1.1 Scope. This drawing forms a part of a

5、one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Iden

6、tifying Number (PIN). 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“. available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. Device class M microcircuits represent non-JAN class Ei microcircuits in accor

7、dance with When 1.2 m. The PIN shall be as shown in the following example: 1 1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows: Device type Generic number I/ Circuit function Access time i 5962 - 94734 o1 I I I I I I stock class designator type designator (1.2.1

8、) (1.2.2) Devi ce II Federal RHA / / 1.2.5 Lead finish. The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or , MIL-1-38535 for classes Q and V. 1 without preference. Finish letter “X“ shall not be marked on the microcircuit or its packaging. The “X“ designation is for

9、 use in specifications when lead finishes A, Ei, and C are considered acceptable and interchangeable M I I STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 T X I I SIZE 5962-94734 A REVISION LEVEL SHEET 2 Lead Case L Devi ce class outline finish designator (1.2.4) (

10、1.2.5) (1.2.3) o1 02 03 16 M x 1, DYNAMIC RAM, 32 ms refresh 16 M x 1, DYNAMIC RAM, 32 ms refresh 16 M x 1, DYNAMIC RAM, 32 ms refresh 100 ns 80 ns 70 ns 1.2.3 Device class desiqnator. The device class designator shall be a single letter identifying the product assurance level (see 6.7 herein) as fo

11、llows: Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-1-38535 1.2.4 Case outline(s1. The case outline(s) shall be as designated in M

12、IL-STD-1835 and as follows: Packaqe style Outline letter Descriptive designator Terminals X Y See figure 1 See figure 1 28 flat pack 28/24 leadless chip carrier Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-M 9999996 O072478 055 - SMD-5962-94734 ST

13、ANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 1.3 Absolute maximum ratinqs. z/ Voltage range on any pin - - - - - - - - - - - - - - Voltage range on Vcc - - - - - - - - - - - - - - - - Short circuit output current - - - - - - - - - - - - Maximum power dissipation (

14、PD) - - - - - - - - - - - Storage temperature range - - - - - - - - - - - - - Lead temperature (soldering, 10 seconds) - - - - - - Thermal resistance, junction-to-case (eJc) Case outlines X and Y - - - - - - - - - - - - - - Junction temperature (TJ) - - - - - - - - - - - 4/ 1.4 Recommended operatinq

15、 conditions. SIZE 5962-94734 A REVISION LEVEL SHEET -1 V dc to 7 V dc -1 V dc to 7 V dc 50 mA 1w -65C to +15OoC +3oooc 15“C/W y t175“C Supply voltage range (Vcc) 5/ - - - - - - - - - - - High-level input voltage (VI Low-level input voltage (vIJ g/ - - - - - - - - - Case operating temzaturerange (TC)

16、 - - - - - - - Transition times, RAS and CAS (rise and fall) - - - +4.5 V dc to +5.5 V dc -1.0 V dc minimum to 0.8 V dc maximum -55C to +125“C 3 ns minimum to 30 ns maximum - - - - - - - - - - - 2.4 V dc minimum to 6.5 V dc maximum 1.5 Diqital logic testinq for device classes Q and V. Fault coverage

17、 measurement of manufacturing logic tests (MIL-STD-883, test method 5012) - - - - - - - - 7/ percent 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, bulletin, and handbook. Unless otherwise specified, the following specification, standards, bulletin, and handbook of the issue listed

18、 in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPECIFICATIONS MI LI TARY MIL-1-38535 STANDARDS MILITARY MIL-STD-883 MIL-STD-973 MIL-STD-1835 - Integrated Circuits, Manufactur

19、ing, General Specification for - Test Methods and Procedures for Microelectronics. - Configuration Management. - Microcircuit Case Outlines. BULLETIN MILITARY MIL-EUL-103 - List of Standard Microcircuit Drawings (SMDs). 2/ 31 4/ - 5/ - 6/ - 7/ Stresses above the absolute maximum rating may cause per

20、manent damage to the device. maximum levels may degrade performance and affect reliability. When the thermal resistance for this case is specified in MIL-STD-1835, that value shall supersede the value indicated herein. Maximum junction temperature shall not be exceeded except for allowable short dur

21、ation burn-in screening conditions in accordance with method 5004 of MIL-STD-883. ALL voltage values in this drawing are with respect to GND. The algebraic convention, where the more negative (less positive) limit is designated as a minimum, is used in this drawing for logic voltage levels only. Whe

22、n a QML source exists, a value shall be provided. Extended operation at the DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-HANDBOOK MILITARY MIL-HDBK-780 - Standardized Military Drawings (Copies of the specification, standards,

23、 bulletin, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.) 2.2 Non-Government publications. The following documents form a part of this document to the extent specif

24、ied herein. of the DODISS cited in the solicitation. are the issues of the documents cited in the solicitation. Unless otherwise specified, the issues of the documents which are DoD adopted are those listed in the issue Unless otherwise specified, the issues of documents not listed in the DODISS ELE

25、CTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard No. 17 - A Standardized Test Procedure for the Characterization of LATCH-UP in CMOS Integrated Circuits. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201.) AMERICAN

26、SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-88 - Standard Guide for the Measurement of Single Event Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to the American Society for Testing and Materials, 191

27、6 Race Street, Philadelphia, Pennsylvania 19103). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 The individual item requirements for device class M shall be in

28、accordance with 1.2.1 of HIL-STO-883, “Provisions for the use of MIL-STO-883 in conjunction with compliant non-JAN devices“ and as specified herein. The individual item requirements for device classes Q and V shall be in accordance with MIL-1-38535 and as specified herein or as modified in the devic

29、e manufacturers Quality Management (QM) plan. plan shall not effect the form, fit, or function as described herein. Item requirements. The modification in the QM 3.2 Desiqn, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-STD-883

30、(see 3.1 herein) for device class M and MIL-1-38535 for device classes Q and V and herein. 3.2.1 Case outline. 3.2.2 Terminal connections. 3.2.3 Truth table. 3.2.4 Radiation exposure circuit. The case outline shall be in accordance with 1.2.4 herein and figure 1. The terminal connections shall be as

31、 specified on figure 2. The truth table shall be as specified on figure 3. The radiation exposure circuit will be provided when RHA product becomes available. 3.2.5 Functional tests. Various functional tests used to test this device are contained in the appendix. If the test patterns cannot be imple

32、mented due to test equipment limitations, alternate test patterns to accomplish the same results shall be allowed. For device class M, alternate test patterns shall be maintained under document revision level control by the manufacturer and shall be made available to the preparing or acquiring activ

33、ity upon request. For device classes Q and V, alternate test patterns shall be under the control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-1-38535 and shall be made available to the preparing or acquiring activity upon request. 5962-94734 REVISION LEVEL SHEET S

34、TANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FOU1 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-3.2.6 Die overcoat. Polyimide and silicone coatings are allowable as an overcoat on the die for al

35、pha particle protection only. subjected to and pass the internal moisture content test at 5000 ppm (method 1018 of MIL-STD-883). the internal water vapor testing shall not be decreased unless approved by the preparing activity for class M. TRB will ascertain the requirements as provided by MIL-1-385

36、35 for classes Q and V. after seal. Each coated microcircuit inspection lot (see inspection lot as defined in MIL-1-385351 shall be The frequency of The Samples may be pulled any time 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein,

37、the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical

38、 tests for each subgroup are defined in table I. 3.5 Markinq. The part shall be marked with the PIN listed in 1.2 herein. Marking for device class M shall be in accordance with MIL-STD-883 (see 3.1 herein). MIL-EUL-103. In addition, the manufacturers PIN may also be marked as listed in Marking for d

39、evice classes Q and V shall be in accordance with MIL-1-38535. 3.5.1 Certification/compliance mark. The compliance mark for device class M shall be a “C“ as required in MIL-STO-883 (see 3.1 herein). in MIL-1-38535. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required

40、 3.6 Certificate of compliance. For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-BUL-103 (see 6.7.2 herein). classes GI and V, a certificate of compliance shall be required from a QML-38535 listed manuf

41、acturer in order to supply to the requirements of this drawing (see 6.7.1 herein). The certificate of compliance submitted to DESC-EC prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device class M, the requirements of MIL-STD-8

42、83 (see 3.1 herein), or for device classes P and V, the requirements of MIL-1-38535 and the requirements herein. For device 3.7 Certificate of conformance. A certificate of conformance as required for device class M in MIL-STD-883 (see 3.1 herein) or for device classes Q and V in MIL-1-38535 shall b

43、e provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of chanqe for device class M. For device class M, notification to DESC-EC of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973. 3.9 V

44、erification and review for device class M. For device class M, DESC, DESCs agent, and the acquiring activity Offshore documentation retain the option to review the manufacturers facility and applicable required documentation. shall be made available onshore at the option of the reviewer. 3.10 Microc

45、ircuit qroup assiqnment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 41 (see MIL-1-38535, appendix A). 4. QUALITY ASSURANCE PROVISIONS 4.1 Samplinq and inspection. For device class M, sampling and inspection procedures shall be in accordanc

46、e with For device classes Q and V, sampling and inspection procedures shall be in accordance MIL-STO-883 (see 3.1 herein). with MIL-1-38535 or as modified in the device manufacturers Quality Management (QM) plan. plan shall not effect the form, fit, or function as described herein. The modification

47、in the QM 4.2 Screeninq. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. For device classes Q and V, screening shall be in accordance with MIL-1-38535, and shall be conducted on all d

48、evices prior to qualification and technology conformance inspection. 5962-94734 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-

49、,-,- _ SND-5962-94734 9999996 0072481 b4T TABLE IA. Electrical performance characteristics. ISymbol I Conditions Group A -55C 5 Tc 5 +12SoC 1 unless otherwise specified I I subgroups I I 1 1,2,3 4.5 v 5 vcc s 5.5 v Test I I I I I I High-level output I vOH I = -5 mA, vIL = 0.8 v vo 1 tage VIH = 2.4 v I I Low-level output I VOL I IOL = 4.2 mA, VIL = 0.8 V 1 1,2,3 voltage 1 VI“ = 2.4 V I Input leakage i I i VI. = O V to 6.5 V, I 1,2,3 current I I v = 5.5 v, I I Aft