DLA SMD-5962-94634-1995 MICROCIRCUIT MEMORY DIGITAL CMOS 8000 GATE CONFIGURABLE LOGIC ARRAY MONOLITHIC SILICON《硅单片 8000栅可配置逻辑阵列 数字记忆微型电路》.pdf
《DLA SMD-5962-94634-1995 MICROCIRCUIT MEMORY DIGITAL CMOS 8000 GATE CONFIGURABLE LOGIC ARRAY MONOLITHIC SILICON《硅单片 8000栅可配置逻辑阵列 数字记忆微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-94634-1995 MICROCIRCUIT MEMORY DIGITAL CMOS 8000 GATE CONFIGURABLE LOGIC ARRAY MONOLITHIC SILICON《硅单片 8000栅可配置逻辑阵列 数字记忆微型电路》.pdf(23页珍藏版)》请在麦多课文档分享上搜索。
1、SMD-5962-94634 9999996 0078732 359 DESCRIPTION REVIS IONS I I LTR I DATE (YR-MO-DA) I APPROVED =-ti+ SHEET REV III SHEET REV STATUS OF SHEETS PMIC NIA STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A *=+TtT+T SHEET
2、PREPARED BY KENNETH RICE CHECKED BY JEFF BOWLING APPROVED BY MICHAEL FRYE DRAWING APPROVAL DATE 95 - 06- 23 REVISION LEVEL DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8000 GATE CONFIGURABLE LOGIC ARRAY, MONOLITHIC SILICON SIZE ICICE CODE 5962-94634 A 6726
3、8 I SHEET 1 OF 22 )ESC FORM 193 JUL 94 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-94634 9999996 0078733 295 - STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTR
4、ONICS SUPPLY CENTER DAYTON, OHIO 45444 1. SCOPE SIZE 5962-94634 A REVISION LEVEL SHEET 2 1.1 Scope. This drawing forms a part of a one part - one part nunber documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and spac
5、e application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Nunber (PIN). 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devicesIl. available, a choice of Radiation Hard
6、ness Assurance (RHA) levels are reflected in the PIN. Device class M microcircuits represent non-JAN class i3 microcircuits in accordance with When I 1.2 PIN. lhe PIN shall be as shown in the following example: X I I Lead i I Case -r I Device P 5962 94634 I Device II Federal RHA stock class designat
7、or tw class outline finish designator (1.2.1) (See 1.2.2) designator (See 1.2.4) (See 1.2.5) / (See 1.2.3) / Drawing nunber 1.2.1 RHA designator. Device class M RHA marked devices shall meet the MIL-1-38535 appendix A specified RHA levels and shall be marked uith the appropriate RHA designator. MIL-
8、1-38535 specified RHA levels and shall be marked with the appropriate RHA designator. non-RHA device. Device classes Q and V RHA marked devices shall meet the A dash (-) indicates a 1.2.2 Device type(s). lhe device type(s) shall identify the circuit function as follows: Device type Generic nunber Ci
9、rcuit function Access time o1 8820 - 3 672 logic cell configurable array 38.2 ns 1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as follows: I Device class Device requirements docwntation M Vendor self-certification to the r
10、equirements for non-JAN class i3 microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-1-38535 1.2.4 Case outline(s). The case outlines shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X
11、 Y CMGA9-P192 See figure 1 192 I/ Fin grid array package 208 Quad-flat package 1.2.5 Lead finish. lhe lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-1-38535 for classes Q and V. Finish letter laxla shall not be marked on the microcircuit or its packaging. The “X
12、“ I designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SND-5962-94634 W 9999996 0078734 121 W STANDARD MICROCIRCUIT DRAWING DEFENSE ELE
13、CTRONICS SUPPLY CENTER DAYTON, OHIO 45444 1.3 Absolute maximum ratin s. 2/ supply voltage range to :round potential (v DC input voltage range - - - - - - - - - -C DC output current, IO, per pin- - - - - - - - DC supply current, ICC or ISS - - - - - - - - Maxim power dissipation (PD)- - - - - - - - L
14、ead tenperature (soldering, 10 seconds) - - Therm L resi stance, junction- to-case (O,) : case outline x - - - - - - - - - - - - - Case outline y - - - - - - - - - - - - - Junction tenperature (TJ) - - - - - - - - - - Storage temperature range - - - - - - - - - - SIZE 5962-94634 A REVISION LEVEL SHE
15、ET -2.0 V dc to +7.0 V dc -2.0 V dc to +7.0 V dc min -25 mA and max +25 mA 1000 mA 5.5 W +260DC See MIL-STD-1835 +150C I/ 12OC/W z/ -65C to +150“C -55C to +125“C +4.5 V dc minim to +5.5 V dc maxim O V dc to Vcc O V dc to Vcc 40 ns MX 40 ns max - 5/ percent 2.1 Government specification, standards, bu
16、lletin, and handbook. Unless otherwise specified, the following Gpecification, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index )f Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified ier
17、ein. SPECIFICATION MILITARY MIL-1-38535 - integrated Circuits, Manufacturing, General Specification for. STANDARDS MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Microcircuit Case Outlines. BULLETIN Mi LITARY MIL-BUL-10
18、3 - List of Standard Microcircuit Drawings (SMDs). HANDBOOK MILITARY MIL-HDBK-780 - Standardized Military Drawings. (Copies of the specifications, standards, bulletin, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting act
19、ivity or as directed by the contracting sctivi ty.) :/ 3/ i/ ?/ Stresses above the absolute maxim rating may cause permanent damage to the device. maximun levels may degrade performance and affect reliability. Maxim junction temperature shall not be exceeded except for allowable short duration burn-
20、in screening conditions in accordance with method 5004 of MIL-STD-883. All voltage values in this drawing are with respect to Vss. When a QML source exists, a value shall be provided. Extended operation at the DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted
21、 without license from IHS-,-,-SMD-5762-94634 9999996 0078735 068 = 7- , 2.2 Non-Govermient wblications. lhe following docwnts form a part of this document to the extent specified Unless otherwise specified, the issues of the docunents uhich are DoD adopted are those listed in the issue herein. of th
22、e D001SS cited in the solicitation. are the issues of the docunents cited in the solicitation. Unless otherwise specified, the issues of documents not listed in the DOOISC AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-88 - Standard Guide for the Measurement of Single Event Ph
23、enomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to the American Society for Testing and Materials, 1916 Race Street, Philadelphia, PA 19103.) ELECTRONICS INDUSTRIES ASSOCIATIOW (EIA) JEDEC Standard No. 17 - A Standardized
24、 Test Procedure for the Characterization of Latch-up in CMOS Integrated Circuits. (Applications for copies should be addressed to the Electronics industries Association, 2500 Ui lson Boulevard, Arlington, VA 22201.) (Non-Govermient standards and other publications are normally available from the org
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